JP2005512323A5 - - Google Patents
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- JP2005512323A5 JP2005512323A5 JP2003550271A JP2003550271A JP2005512323A5 JP 2005512323 A5 JP2005512323 A5 JP 2005512323A5 JP 2003550271 A JP2003550271 A JP 2003550271A JP 2003550271 A JP2003550271 A JP 2003550271A JP 2005512323 A5 JP2005512323 A5 JP 2005512323A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layered superlattice
- lan
- superlattice material
- fabricating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 238000000034 method Methods 0.000 claims 21
- 239000000758 substrate Substances 0.000 claims 12
- 239000000463 material Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 7
- 229910052779 Neodymium Inorganic materials 0.000 claims 4
- 239000012705 liquid precursor Substances 0.000 claims 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 229910052684 Cerium Inorganic materials 0.000 claims 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims 3
- 229910052691 Erbium Inorganic materials 0.000 claims 3
- 229910052693 Europium Inorganic materials 0.000 claims 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims 3
- 229910052689 Holmium Inorganic materials 0.000 claims 3
- 229910052765 Lutetium Inorganic materials 0.000 claims 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims 3
- 229910052773 Promethium Inorganic materials 0.000 claims 3
- 229910052772 Samarium Inorganic materials 0.000 claims 3
- 229910052771 Terbium Inorganic materials 0.000 claims 3
- 229910052775 Thulium Inorganic materials 0.000 claims 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 3
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims 3
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims 3
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims 3
- 229910052746 lanthanum Inorganic materials 0.000 claims 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 3
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims 3
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims 3
- 239000002243 precursor Substances 0.000 claims 3
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 claims 3
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims 3
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims 3
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 229910052745 lead Inorganic materials 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000003595 mist Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/998,364 US20030152813A1 (en) | 1992-10-23 | 2001-11-29 | Lanthanide series layered superlattice materials for integrated circuit appalications |
| PCT/US2002/029325 WO2003049172A1 (en) | 2001-11-29 | 2002-09-17 | Lanthanide series layered superlattice materials for integrated circuit applications |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005512323A JP2005512323A (ja) | 2005-04-28 |
| JP2005512323A5 true JP2005512323A5 (https=) | 2005-12-22 |
Family
ID=25545109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003550271A Withdrawn JP2005512323A (ja) | 2001-11-29 | 2002-09-17 | 集積回路用途のためのランタン系列の層状超格子材料 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20030152813A1 (https=) |
| EP (1) | EP1449241A1 (https=) |
| JP (1) | JP2005512323A (https=) |
| KR (1) | KR20040071692A (https=) |
| CN (1) | CN1618123A (https=) |
| AU (1) | AU2002333658A1 (https=) |
| WO (1) | WO2003049172A1 (https=) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6844604B2 (en) * | 2001-02-02 | 2005-01-18 | Samsung Electronics Co., Ltd. | Dielectric layer for semiconductor device and method of manufacturing the same |
| US20080213496A1 (en) * | 2002-02-14 | 2008-09-04 | Applied Materials, Inc. | Method of coating semiconductor processing apparatus with protective yttrium-containing coatings |
| KR100723399B1 (ko) * | 2002-08-06 | 2007-05-30 | 삼성전자주식회사 | 비스무트 티타늄 실리콘 산화물, 비스무트 티타늄 실리콘산화물 박막 및 그 제조방법 |
| US6887523B2 (en) * | 2002-12-20 | 2005-05-03 | Sharp Laboratories Of America, Inc. | Method for metal oxide thin film deposition via MOCVD |
| WO2004065669A1 (ja) * | 2003-01-21 | 2004-08-05 | Tdk Corporation | 薄膜容量素子用組成物、高誘電率絶縁膜、薄膜容量素子、薄膜積層コンデンサおよび薄膜容量素子の製造方法 |
| JP4264708B2 (ja) * | 2003-03-18 | 2009-05-20 | セイコーエプソン株式会社 | セラミックス膜の製造方法 |
| KR20060095876A (ko) * | 2003-07-28 | 2006-09-04 | 아사히 가라스 가부시키가이샤 | 강유전체 박막 형성용 액상 조성물 및 강유전체 박막의제조방법 |
| US7105886B2 (en) * | 2003-11-12 | 2006-09-12 | Freescale Semiconductor, Inc. | High K dielectric film |
| CN100565912C (zh) * | 2003-11-12 | 2009-12-02 | 飞思卡尔半导体公司 | 高k介电膜 |
| US20050183740A1 (en) * | 2004-02-19 | 2005-08-25 | Fulton John L. | Process and apparatus for removing residues from semiconductor substrates |
| WO2005122260A1 (ja) * | 2004-06-11 | 2005-12-22 | Fujitsu Limited | 容量素子、集積回路および電子装置 |
| KR100589040B1 (ko) | 2004-08-05 | 2006-06-14 | 삼성전자주식회사 | 막 형성방법 및 이를 이용한 반도체 장치의 커패시터제조방법 |
| US7973348B1 (en) * | 2004-08-06 | 2011-07-05 | Dalton David I | Single transistor charge transfer random access memory |
| US7619272B2 (en) * | 2004-12-07 | 2009-11-17 | Lsi Corporation | Bi-axial texturing of high-K dielectric films to reduce leakage currents |
| TW200733379A (en) * | 2005-12-22 | 2007-09-01 | Mears R J Llc | Electronic device including a poled superlattice having a net electrical dipole moment |
| JP2009529579A (ja) * | 2006-03-10 | 2009-08-20 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | チタネート、ランタネート及びタンタレート誘電体の膜の原子層堆積及び化学蒸着のための前駆体組成物 |
| US7482289B2 (en) * | 2006-08-25 | 2009-01-27 | Battelle Memorial Institute | Methods and apparatus for depositing tantalum metal films to surfaces and substrates |
| US10242888B2 (en) | 2007-04-27 | 2019-03-26 | Applied Materials, Inc. | Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance |
| US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
| WO2009020888A1 (en) * | 2007-08-08 | 2009-02-12 | Advanced Technology Materials, Inc. | Strontium and barium precursors for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition |
| US7696604B2 (en) * | 2007-10-23 | 2010-04-13 | International Business Machines Corporation | Silicon germanium heterostructure barrier varactor |
| WO2012005957A2 (en) | 2010-07-07 | 2012-01-12 | Advanced Technology Materials, Inc. | Doping of zro2 for dram applications |
| WO2012057608A1 (en) * | 2010-10-29 | 2012-05-03 | Universiti Sains Malaysia | A method for producing metal-oxide-semiconductor (mos) capacitor |
| US9013002B1 (en) * | 2011-12-02 | 2015-04-21 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Iridium interfacial stack (IRIS) |
| JP2013222963A (ja) * | 2012-04-17 | 2013-10-28 | Tokyo Ohka Kogyo Co Ltd | 搬送装置及び塗布装置 |
| WO2013177326A1 (en) | 2012-05-25 | 2013-11-28 | Advanced Technology Materials, Inc. | Silicon precursors for low temperature ald of silicon-based thin-films |
| US10186570B2 (en) | 2013-02-08 | 2019-01-22 | Entegris, Inc. | ALD processes for low leakage current and low equivalent oxide thickness BiTaO films |
| JP6572015B2 (ja) * | 2015-06-25 | 2019-09-04 | 株式会社日本マイクロニクス | 二次電池の製造方法 |
| KR20180097377A (ko) * | 2017-02-23 | 2018-08-31 | 에스케이하이닉스 주식회사 | 강유전성 메모리 장치 및 그 제조 방법 |
| US10861973B2 (en) | 2018-06-27 | 2020-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative capacitance transistor with a diffusion blocking layer |
| US11222958B2 (en) * | 2018-09-28 | 2022-01-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative capacitance transistor with external ferroelectric structure |
| JP7092977B2 (ja) * | 2018-09-28 | 2022-06-29 | 株式会社リコー | 酸化物絶縁膜形成用塗布液、酸化物絶縁膜の製造方法、及び電界効果型トランジスタの製造方法 |
| CN109904162A (zh) * | 2019-03-08 | 2019-06-18 | 成都豆萁集成电路设计有限公司 | 一种铁电存储器单元及其制造方法 |
| CN110277454B (zh) * | 2019-06-19 | 2022-08-09 | 上海华力集成电路制造有限公司 | 负电容场效应晶体管及其工艺方法 |
| CN110459611B (zh) * | 2019-08-19 | 2022-05-24 | 湘潭大学 | 一种铁电场效应晶体管及其制备方法 |
| CN111162120A (zh) * | 2019-12-27 | 2020-05-15 | 中国科学院微电子研究所 | 一种存储器件、存储器及其制作方法、电子设备和芯片 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6056994A (en) * | 1988-12-27 | 2000-05-02 | Symetrix Corporation | Liquid deposition methods of fabricating layered superlattice materials |
| US5519234A (en) * | 1991-02-25 | 1996-05-21 | Symetrix Corporation | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current |
| US5648114A (en) * | 1991-12-13 | 1997-07-15 | Symetrix Corporation | Chemical vapor deposition process for fabricating layered superlattice materials |
| US6022669A (en) * | 1995-05-02 | 2000-02-08 | Symetrix Corporation | Method of fabricating an integrated circuit using self-patterned thin films |
| US5997642A (en) * | 1996-05-21 | 1999-12-07 | Symetrix Corporation | Method and apparatus for misted deposition of integrated circuit quality thin films |
| JP3193302B2 (ja) * | 1996-06-26 | 2001-07-30 | ティーディーケイ株式会社 | 膜構造体、電子デバイス、記録媒体および強誘電体薄膜の製造方法 |
| US6303391B1 (en) * | 1997-06-26 | 2001-10-16 | Advanced Technology Materials, Inc. | Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices |
| US5788757A (en) * | 1996-12-23 | 1998-08-04 | Symetrix Corporation | Composition and process using ester solvents for fabricating metal oxide films and electronic devices including the same |
| US5942376A (en) * | 1997-08-14 | 1999-08-24 | Symetrix Corporation | Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films |
| KR100313253B1 (ko) * | 1999-03-10 | 2001-11-05 | 노태원 | 반도체 메모리 셀용 적층형 페로브스카이트 강유전체 캐패시터 |
| CN1358326A (zh) * | 1999-06-10 | 2002-07-10 | 塞姆特里克斯公司 | 高介电常数的金属氧化物薄膜 |
-
2001
- 2001-11-29 US US09/998,364 patent/US20030152813A1/en not_active Abandoned
-
2002
- 2002-09-17 EP EP02804390A patent/EP1449241A1/en not_active Withdrawn
- 2002-09-17 WO PCT/US2002/029325 patent/WO2003049172A1/en not_active Ceased
- 2002-09-17 AU AU2002333658A patent/AU2002333658A1/en not_active Abandoned
- 2002-09-17 JP JP2003550271A patent/JP2005512323A/ja not_active Withdrawn
- 2002-09-17 KR KR10-2004-7008182A patent/KR20040071692A/ko not_active Ceased
- 2002-09-17 CN CNA028276884A patent/CN1618123A/zh active Pending
-
2004
- 2004-05-20 US US10/851,703 patent/US20040211998A1/en not_active Abandoned
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