CN1618123A - 用于集成电路应用的镧系分层超晶格材料 - Google Patents
用于集成电路应用的镧系分层超晶格材料 Download PDFInfo
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- CN1618123A CN1618123A CNA028276884A CN02827688A CN1618123A CN 1618123 A CN1618123 A CN 1618123A CN A028276884 A CNA028276884 A CN A028276884A CN 02827688 A CN02827688 A CN 02827688A CN 1618123 A CN1618123 A CN 1618123A
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- H10P14/69397—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing two or more metal elements
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- Inorganic Chemistry (AREA)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/998,364 US20030152813A1 (en) | 1992-10-23 | 2001-11-29 | Lanthanide series layered superlattice materials for integrated circuit appalications |
| US09/998,364 | 2001-11-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1618123A true CN1618123A (zh) | 2005-05-18 |
Family
ID=25545109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA028276884A Pending CN1618123A (zh) | 2001-11-29 | 2002-09-17 | 用于集成电路应用的镧系分层超晶格材料 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20030152813A1 (https=) |
| EP (1) | EP1449241A1 (https=) |
| JP (1) | JP2005512323A (https=) |
| KR (1) | KR20040071692A (https=) |
| CN (1) | CN1618123A (https=) |
| AU (1) | AU2002333658A1 (https=) |
| WO (1) | WO2003049172A1 (https=) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101772589B (zh) * | 2007-08-02 | 2013-08-28 | 应用材料公司 | 使用降低电弧和腐蚀的保护性含钇涂层涂覆半导体处理设备的方法 |
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| US5788757A (en) * | 1996-12-23 | 1998-08-04 | Symetrix Corporation | Composition and process using ester solvents for fabricating metal oxide films and electronic devices including the same |
| US5942376A (en) * | 1997-08-14 | 1999-08-24 | Symetrix Corporation | Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films |
| KR100313253B1 (ko) * | 1999-03-10 | 2001-11-05 | 노태원 | 반도체 메모리 셀용 적층형 페로브스카이트 강유전체 캐패시터 |
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2001
- 2001-11-29 US US09/998,364 patent/US20030152813A1/en not_active Abandoned
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2002
- 2002-09-17 EP EP02804390A patent/EP1449241A1/en not_active Withdrawn
- 2002-09-17 WO PCT/US2002/029325 patent/WO2003049172A1/en not_active Ceased
- 2002-09-17 AU AU2002333658A patent/AU2002333658A1/en not_active Abandoned
- 2002-09-17 JP JP2003550271A patent/JP2005512323A/ja not_active Withdrawn
- 2002-09-17 KR KR10-2004-7008182A patent/KR20040071692A/ko not_active Ceased
- 2002-09-17 CN CNA028276884A patent/CN1618123A/zh active Pending
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2004
- 2004-05-20 US US10/851,703 patent/US20040211998A1/en not_active Abandoned
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101772589B (zh) * | 2007-08-02 | 2013-08-28 | 应用材料公司 | 使用降低电弧和腐蚀的保护性含钇涂层涂覆半导体处理设备的方法 |
| CN103436836A (zh) * | 2007-08-02 | 2013-12-11 | 应用材料公司 | 一种使用保护性含钇涂层涂敷半导体设备的方法 |
| CN109904162A (zh) * | 2019-03-08 | 2019-06-18 | 成都豆萁集成电路设计有限公司 | 一种铁电存储器单元及其制造方法 |
| CN110277454A (zh) * | 2019-06-19 | 2019-09-24 | 上海华力集成电路制造有限公司 | 负电容场效应晶体管及其工艺方法 |
| CN110277454B (zh) * | 2019-06-19 | 2022-08-09 | 上海华力集成电路制造有限公司 | 负电容场效应晶体管及其工艺方法 |
| CN110459611A (zh) * | 2019-08-19 | 2019-11-15 | 湘潭大学 | 一种铁电场效应晶体管及其制备方法 |
| CN110459611B (zh) * | 2019-08-19 | 2022-05-24 | 湘潭大学 | 一种铁电场效应晶体管及其制备方法 |
| CN111162120A (zh) * | 2019-12-27 | 2020-05-15 | 中国科学院微电子研究所 | 一种存储器件、存储器及其制作方法、电子设备和芯片 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20030152813A1 (en) | 2003-08-14 |
| JP2005512323A (ja) | 2005-04-28 |
| AU2002333658A1 (en) | 2003-06-17 |
| KR20040071692A (ko) | 2004-08-12 |
| WO2003049172A1 (en) | 2003-06-12 |
| US20040211998A1 (en) | 2004-10-28 |
| WO2003049172B1 (en) | 2003-08-21 |
| EP1449241A1 (en) | 2004-08-25 |
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