JP2005512323A - 集積回路用途のためのランタン系列の層状超格子材料 - Google Patents
集積回路用途のためのランタン系列の層状超格子材料 Download PDFInfo
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- JP2005512323A JP2005512323A JP2003550271A JP2003550271A JP2005512323A JP 2005512323 A JP2005512323 A JP 2005512323A JP 2003550271 A JP2003550271 A JP 2003550271A JP 2003550271 A JP2003550271 A JP 2003550271A JP 2005512323 A JP2005512323 A JP 2005512323A
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- H10P14/69397—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing two or more metal elements
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- H10P14/69396—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
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- Chemical Kinetics & Catalysis (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/998,364 US20030152813A1 (en) | 1992-10-23 | 2001-11-29 | Lanthanide series layered superlattice materials for integrated circuit appalications |
| PCT/US2002/029325 WO2003049172A1 (en) | 2001-11-29 | 2002-09-17 | Lanthanide series layered superlattice materials for integrated circuit applications |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005512323A true JP2005512323A (ja) | 2005-04-28 |
| JP2005512323A5 JP2005512323A5 (https=) | 2005-12-22 |
Family
ID=25545109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003550271A Withdrawn JP2005512323A (ja) | 2001-11-29 | 2002-09-17 | 集積回路用途のためのランタン系列の層状超格子材料 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20030152813A1 (https=) |
| EP (1) | EP1449241A1 (https=) |
| JP (1) | JP2005512323A (https=) |
| KR (1) | KR20040071692A (https=) |
| CN (1) | CN1618123A (https=) |
| AU (1) | AU2002333658A1 (https=) |
| WO (1) | WO2003049172A1 (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009529579A (ja) * | 2006-03-10 | 2009-08-20 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | チタネート、ランタネート及びタンタレート誘電体の膜の原子層堆積及び化学蒸着のための前駆体組成物 |
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Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6844604B2 (en) * | 2001-02-02 | 2005-01-18 | Samsung Electronics Co., Ltd. | Dielectric layer for semiconductor device and method of manufacturing the same |
| US20080213496A1 (en) * | 2002-02-14 | 2008-09-04 | Applied Materials, Inc. | Method of coating semiconductor processing apparatus with protective yttrium-containing coatings |
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| WO2004065669A1 (ja) * | 2003-01-21 | 2004-08-05 | Tdk Corporation | 薄膜容量素子用組成物、高誘電率絶縁膜、薄膜容量素子、薄膜積層コンデンサおよび薄膜容量素子の製造方法 |
| JP4264708B2 (ja) * | 2003-03-18 | 2009-05-20 | セイコーエプソン株式会社 | セラミックス膜の製造方法 |
| KR20060095876A (ko) * | 2003-07-28 | 2006-09-04 | 아사히 가라스 가부시키가이샤 | 강유전체 박막 형성용 액상 조성물 및 강유전체 박막의제조방법 |
| US7105886B2 (en) * | 2003-11-12 | 2006-09-12 | Freescale Semiconductor, Inc. | High K dielectric film |
| CN100565912C (zh) * | 2003-11-12 | 2009-12-02 | 飞思卡尔半导体公司 | 高k介电膜 |
| US20050183740A1 (en) * | 2004-02-19 | 2005-08-25 | Fulton John L. | Process and apparatus for removing residues from semiconductor substrates |
| WO2005122260A1 (ja) * | 2004-06-11 | 2005-12-22 | Fujitsu Limited | 容量素子、集積回路および電子装置 |
| KR100589040B1 (ko) | 2004-08-05 | 2006-06-14 | 삼성전자주식회사 | 막 형성방법 및 이를 이용한 반도체 장치의 커패시터제조방법 |
| US7973348B1 (en) * | 2004-08-06 | 2011-07-05 | Dalton David I | Single transistor charge transfer random access memory |
| US7619272B2 (en) * | 2004-12-07 | 2009-11-17 | Lsi Corporation | Bi-axial texturing of high-K dielectric films to reduce leakage currents |
| TW200733379A (en) * | 2005-12-22 | 2007-09-01 | Mears R J Llc | Electronic device including a poled superlattice having a net electrical dipole moment |
| US7482289B2 (en) * | 2006-08-25 | 2009-01-27 | Battelle Memorial Institute | Methods and apparatus for depositing tantalum metal films to surfaces and substrates |
| US10242888B2 (en) | 2007-04-27 | 2019-03-26 | Applied Materials, Inc. | Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance |
| US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
| WO2009020888A1 (en) * | 2007-08-08 | 2009-02-12 | Advanced Technology Materials, Inc. | Strontium and barium precursors for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition |
| US7696604B2 (en) * | 2007-10-23 | 2010-04-13 | International Business Machines Corporation | Silicon germanium heterostructure barrier varactor |
| WO2012057608A1 (en) * | 2010-10-29 | 2012-05-03 | Universiti Sains Malaysia | A method for producing metal-oxide-semiconductor (mos) capacitor |
| US9013002B1 (en) * | 2011-12-02 | 2015-04-21 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Iridium interfacial stack (IRIS) |
| JP2013222963A (ja) * | 2012-04-17 | 2013-10-28 | Tokyo Ohka Kogyo Co Ltd | 搬送装置及び塗布装置 |
| US10186570B2 (en) | 2013-02-08 | 2019-01-22 | Entegris, Inc. | ALD processes for low leakage current and low equivalent oxide thickness BiTaO films |
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| KR20180097377A (ko) * | 2017-02-23 | 2018-08-31 | 에스케이하이닉스 주식회사 | 강유전성 메모리 장치 및 그 제조 방법 |
| US10861973B2 (en) | 2018-06-27 | 2020-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative capacitance transistor with a diffusion blocking layer |
| US11222958B2 (en) * | 2018-09-28 | 2022-01-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative capacitance transistor with external ferroelectric structure |
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| CN111162120A (zh) * | 2019-12-27 | 2020-05-15 | 中国科学院微电子研究所 | 一种存储器件、存储器及其制作方法、电子设备和芯片 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6056994A (en) * | 1988-12-27 | 2000-05-02 | Symetrix Corporation | Liquid deposition methods of fabricating layered superlattice materials |
| US5519234A (en) * | 1991-02-25 | 1996-05-21 | Symetrix Corporation | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current |
| US5648114A (en) * | 1991-12-13 | 1997-07-15 | Symetrix Corporation | Chemical vapor deposition process for fabricating layered superlattice materials |
| US6022669A (en) * | 1995-05-02 | 2000-02-08 | Symetrix Corporation | Method of fabricating an integrated circuit using self-patterned thin films |
| US5997642A (en) * | 1996-05-21 | 1999-12-07 | Symetrix Corporation | Method and apparatus for misted deposition of integrated circuit quality thin films |
| JP3193302B2 (ja) * | 1996-06-26 | 2001-07-30 | ティーディーケイ株式会社 | 膜構造体、電子デバイス、記録媒体および強誘電体薄膜の製造方法 |
| US6303391B1 (en) * | 1997-06-26 | 2001-10-16 | Advanced Technology Materials, Inc. | Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices |
| US5788757A (en) * | 1996-12-23 | 1998-08-04 | Symetrix Corporation | Composition and process using ester solvents for fabricating metal oxide films and electronic devices including the same |
| US5942376A (en) * | 1997-08-14 | 1999-08-24 | Symetrix Corporation | Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films |
| KR100313253B1 (ko) * | 1999-03-10 | 2001-11-05 | 노태원 | 반도체 메모리 셀용 적층형 페로브스카이트 강유전체 캐패시터 |
| CN1358326A (zh) * | 1999-06-10 | 2002-07-10 | 塞姆特里克斯公司 | 高介电常数的金属氧化物薄膜 |
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2001
- 2001-11-29 US US09/998,364 patent/US20030152813A1/en not_active Abandoned
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2002
- 2002-09-17 EP EP02804390A patent/EP1449241A1/en not_active Withdrawn
- 2002-09-17 WO PCT/US2002/029325 patent/WO2003049172A1/en not_active Ceased
- 2002-09-17 AU AU2002333658A patent/AU2002333658A1/en not_active Abandoned
- 2002-09-17 JP JP2003550271A patent/JP2005512323A/ja not_active Withdrawn
- 2002-09-17 KR KR10-2004-7008182A patent/KR20040071692A/ko not_active Ceased
- 2002-09-17 CN CNA028276884A patent/CN1618123A/zh active Pending
-
2004
- 2004-05-20 US US10/851,703 patent/US20040211998A1/en not_active Abandoned
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009529579A (ja) * | 2006-03-10 | 2009-08-20 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | チタネート、ランタネート及びタンタレート誘電体の膜の原子層堆積及び化学蒸着のための前駆体組成物 |
| US9373677B2 (en) | 2010-07-07 | 2016-06-21 | Entegris, Inc. | Doping of ZrO2 for DRAM applications |
| US9443736B2 (en) | 2012-05-25 | 2016-09-13 | Entegris, Inc. | Silylene compositions and methods of use thereof |
| JP2020057663A (ja) * | 2018-09-28 | 2020-04-09 | 株式会社リコー | 酸化物絶縁膜形成用塗布液、酸化物絶縁膜の製造方法、及び電界効果型トランジスタの製造方法 |
| JP7092977B2 (ja) | 2018-09-28 | 2022-06-29 | 株式会社リコー | 酸化物絶縁膜形成用塗布液、酸化物絶縁膜の製造方法、及び電界効果型トランジスタの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20030152813A1 (en) | 2003-08-14 |
| AU2002333658A1 (en) | 2003-06-17 |
| KR20040071692A (ko) | 2004-08-12 |
| WO2003049172A1 (en) | 2003-06-12 |
| US20040211998A1 (en) | 2004-10-28 |
| WO2003049172B1 (en) | 2003-08-21 |
| EP1449241A1 (en) | 2004-08-25 |
| CN1618123A (zh) | 2005-05-18 |
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