JP2005508097A5 - - Google Patents
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- Publication number
- JP2005508097A5 JP2005508097A5 JP2003541310A JP2003541310A JP2005508097A5 JP 2005508097 A5 JP2005508097 A5 JP 2005508097A5 JP 2003541310 A JP2003541310 A JP 2003541310A JP 2003541310 A JP2003541310 A JP 2003541310A JP 2005508097 A5 JP2005508097 A5 JP 2005508097A5
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- processing chamber
- platter
- liner
- article
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims 52
- 239000004020 conductor Substances 0.000 claims 32
- 239000000463 material Substances 0.000 claims 24
- 238000000034 method Methods 0.000 claims 19
- 230000005672 electromagnetic field Effects 0.000 claims 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 4
- 239000011248 coating agent Substances 0.000 claims 4
- 238000000576 coating method Methods 0.000 claims 4
- 229910002804 graphite Inorganic materials 0.000 claims 4
- 239000010439 graphite Substances 0.000 claims 4
- 230000006698 induction Effects 0.000 claims 4
- 239000003870 refractory metal Substances 0.000 claims 4
- 239000012530 fluid Substances 0.000 claims 3
- 230000002238 attenuated effect Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- 230000031070 response to heat Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/017,492 US6896738B2 (en) | 2001-10-30 | 2001-10-30 | Induction heating devices and methods for controllably heating an article |
| PCT/US2002/034090 WO2003039195A2 (en) | 2001-10-30 | 2002-10-24 | Induction heating devices and methods for controllably heating an article |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005508097A JP2005508097A (ja) | 2005-03-24 |
| JP2005508097A5 true JP2005508097A5 (https=) | 2006-01-05 |
Family
ID=21782889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003541310A Pending JP2005508097A (ja) | 2001-10-30 | 2002-10-24 | 物品を制御可能に加熱するための加熱装置及びその加熱方法 |
Country Status (11)
| Country | Link |
|---|---|
| US (3) | US6896738B2 (https=) |
| EP (1) | EP1449407B1 (https=) |
| JP (1) | JP2005508097A (https=) |
| KR (1) | KR20050039709A (https=) |
| CN (1) | CN1611095A (https=) |
| AT (1) | ATE412331T1 (https=) |
| AU (1) | AU2002348053A1 (https=) |
| CA (1) | CA2464855A1 (https=) |
| DE (1) | DE60229549D1 (https=) |
| TW (1) | TWI274081B (https=) |
| WO (1) | WO2003039195A2 (https=) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6613587B1 (en) * | 2002-04-11 | 2003-09-02 | Micron Technology, Inc. | Method of replacing at least a portion of a semiconductor substrate deposition chamber liner |
| US7256375B2 (en) * | 2002-08-30 | 2007-08-14 | Asm International N.V. | Susceptor plate for high temperature heat treatment |
| EP1615261B8 (en) * | 2003-04-02 | 2019-09-18 | SUMCO Corporation | Semiconductor wafer heat treatment jig |
| US7181132B2 (en) | 2003-08-20 | 2007-02-20 | Asm International N.V. | Method and system for loading substrate supports into a substrate holder |
| JP2005197464A (ja) * | 2004-01-07 | 2005-07-21 | Rohm Co Ltd | 半導体装置の製造方法 |
| US7230274B2 (en) * | 2004-03-01 | 2007-06-12 | Cree, Inc | Reduction of carrot defects in silicon carbide epitaxy |
| US7173285B2 (en) * | 2004-03-18 | 2007-02-06 | Cree, Inc. | Lithographic methods to reduce stacking fault nucleation sites |
| US7109521B2 (en) * | 2004-03-18 | 2006-09-19 | Cree, Inc. | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
| TW200609371A (en) * | 2004-05-18 | 2006-03-16 | Univ Arkansas | Apparatus and methods of making nanostructures by inductive heating |
| US7365289B2 (en) * | 2004-05-18 | 2008-04-29 | The United States Of America As Represented By The Department Of Health And Human Services | Production of nanostructures by curie point induction heating |
| US7473873B2 (en) * | 2004-05-18 | 2009-01-06 | The Board Of Trustees Of The University Of Arkansas | Apparatus and methods for synthesis of large size batches of carbon nanostructures |
| US9612215B2 (en) | 2004-07-22 | 2017-04-04 | Toyo Tanso Co., Ltd. | Susceptor |
| US20060065634A1 (en) * | 2004-09-17 | 2006-03-30 | Van Den Berg Jannes R | Low temperature susceptor cleaning |
| US20060060145A1 (en) * | 2004-09-17 | 2006-03-23 | Van Den Berg Jannes R | Susceptor with surface roughness for high temperature substrate processing |
| CN100487862C (zh) * | 2005-09-07 | 2009-05-13 | 财团法人工业技术研究院 | 形成多晶硅薄膜的方法 |
| US8052794B2 (en) * | 2005-09-12 | 2011-11-08 | The United States Of America As Represented By The Secretary Of The Navy | Directed reagents to improve material uniformity |
| ITMI20052498A1 (it) * | 2005-12-28 | 2007-06-29 | Lpe Spa | Camera di reazione a temperatura differenziata |
| CA2584950A1 (en) * | 2006-04-26 | 2007-10-26 | Kansai Paint Co., Ltd. | Powder primer composition and method for forming coating film |
| US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
| JP5051875B2 (ja) * | 2006-12-25 | 2012-10-17 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| JP5202839B2 (ja) * | 2006-12-25 | 2013-06-05 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| JP5138212B2 (ja) | 2006-12-25 | 2013-02-06 | 東京エレクトロン株式会社 | 成膜装置 |
| JP5126095B2 (ja) * | 2008-02-05 | 2013-01-23 | 東京エレクトロン株式会社 | 加熱装置及び加熱方法 |
| US9328417B2 (en) * | 2008-11-01 | 2016-05-03 | Ultratech, Inc. | System and method for thin film deposition |
| US8536582B2 (en) | 2008-12-01 | 2013-09-17 | Cree, Inc. | Stable power devices on low-angle off-cut silicon carbide crystals |
| US8574528B2 (en) * | 2009-09-04 | 2013-11-05 | University Of South Carolina | Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime |
| CN102465335B (zh) * | 2010-11-18 | 2014-07-16 | 南京大学 | 一种用于半导体材料热壁外延生长系统的加热装置 |
| CN103160810B (zh) * | 2011-12-09 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种用于感应加热的托盘及等离子体加工设备 |
| CN103422073A (zh) * | 2012-05-24 | 2013-12-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 用于感应加热的托盘及等离子体加工设备 |
| CN103794528B (zh) * | 2012-10-30 | 2016-09-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 半导体加工设备 |
| US10047457B2 (en) * | 2013-09-16 | 2018-08-14 | Applied Materials, Inc. | EPI pre-heat ring |
| JP6097681B2 (ja) | 2013-12-24 | 2017-03-15 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造装置およびSiCエピタキシャルウェハの製造方法 |
| KR101431606B1 (ko) * | 2014-02-24 | 2014-08-22 | (주)앤피에스 | 기판 처리 장치 |
| CN104046964B (zh) * | 2014-07-01 | 2016-05-11 | 清华大学 | 热功率密度径向分布可调的电磁感应加热装置 |
| JP6444641B2 (ja) * | 2014-07-24 | 2018-12-26 | 株式会社ニューフレアテクノロジー | 成膜装置、サセプタ、及び成膜方法 |
| JP2017055086A (ja) * | 2015-09-11 | 2017-03-16 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造方法及びSiCエピタキシャルウェハの製造装置 |
| CN108603290B (zh) * | 2015-10-01 | 2021-09-10 | 环球晶圆股份有限公司 | Cvd设备 |
| US10407769B2 (en) * | 2016-03-18 | 2019-09-10 | Goodrich Corporation | Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces |
| JP6635871B2 (ja) * | 2016-05-11 | 2020-01-29 | 東京エレクトロン株式会社 | 成膜装置 |
| DE102017122229A1 (de) * | 2017-09-26 | 2019-03-28 | Pstproducts Gmbh | EMPT Spule mit austauschbarem Leiter |
| US20250259864A1 (en) * | 2024-02-12 | 2025-08-14 | Agnitron Technology, Inc. | Rapid thermal cycling annealing apparatus |
Family Cites Families (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US633121A (en) * | 1897-09-29 | 1899-09-19 | Arthur John Cuming | Spring-frame for bicycles. |
| US3424628A (en) | 1966-01-24 | 1969-01-28 | Western Electric Co | Methods and apparatus for treating semi-conductive materials with gases |
| US3868924A (en) * | 1969-06-30 | 1975-03-04 | Siemens Ag | Apparatus for indiffusing dopants into semiconductor material |
| US3845738A (en) * | 1973-09-12 | 1974-11-05 | Rca Corp | Vapor deposition apparatus with pyrolytic graphite heat shield |
| FR2581711B1 (fr) | 1985-05-13 | 1987-11-20 | Labo Electronique Physique | Dispositif pour la regulation, l'interruption ou la commutation de fluides |
| FR2591616A1 (fr) | 1985-12-17 | 1987-06-19 | Labo Electronique Physique | Chambre de reacteur pour croissance epitaxiale en phase vapeur des materiaux semiconducteurs. |
| FR2596070A1 (fr) * | 1986-03-21 | 1987-09-25 | Labo Electronique Physique | Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan |
| FR2599558B1 (fr) | 1986-05-27 | 1988-09-02 | Labo Electronique Physique | Procede de realisation d'un dispositif semi-conducteur, incluant le depot en phase vapeur de couches sur un substrat |
| US4699805A (en) * | 1986-07-03 | 1987-10-13 | Motorola Inc. | Process and apparatus for the low pressure chemical vapor deposition of thin films |
| JPS6427225A (en) * | 1987-07-22 | 1989-01-30 | Fujitsu Ltd | Vapor growth system |
| US4845332A (en) * | 1987-09-16 | 1989-07-04 | National Steel Corp. | Galvanneal induction furnace temperature control system |
| FR2628984B1 (fr) | 1988-03-22 | 1990-12-28 | Labo Electronique Physique | Reacteur d'epitaxie a planetaire |
| FR2628985B1 (fr) | 1988-03-22 | 1990-12-28 | Labo Electronique Physique | Reacteur d'epitaxie a paroi protegee contre les depots |
| FR2638020B1 (fr) | 1988-10-14 | 1990-12-28 | Labo Electronique Physique | Reacteur d'epitaxie a collecteur de gaz ameliore |
| FR2648890B1 (fr) | 1989-06-27 | 1991-09-13 | Labo Electronique Physique | Dispositif de protection contre une surpression |
| US5119540A (en) | 1990-07-24 | 1992-06-09 | Cree Research, Inc. | Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product |
| JPH07176482A (ja) | 1991-05-31 | 1995-07-14 | At & T Corp | エピタキシャル成長方法および装置 |
| US5226383A (en) | 1992-03-12 | 1993-07-13 | Bell Communications Research, Inc. | Gas foil rotating substrate holder |
| US5558721A (en) | 1993-11-15 | 1996-09-24 | The Furukawa Electric Co., Ltd. | Vapor phase growth system and a gas-drive motor |
| US5468299A (en) | 1995-01-09 | 1995-11-21 | Tsai; Charles S. | Device comprising a flat susceptor rotating parallel to a reference surface about a shaft perpendicular to this surface |
| SE9500326D0 (sv) | 1995-01-31 | 1995-01-31 | Abb Research Ltd | Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD |
| SE9502288D0 (sv) | 1995-06-26 | 1995-06-26 | Abb Research Ltd | A device and a method for epitaxially growing objects by CVD |
| US6030661A (en) | 1995-08-04 | 2000-02-29 | Abb Research Ltd. | Device and a method for epitaxially growing objects by CVD |
| SE9503426D0 (sv) | 1995-10-04 | 1995-10-04 | Abb Research Ltd | A device for heat treatment of objects and a method for producing a susceptor |
| SE9503428D0 (sv) | 1995-10-04 | 1995-10-04 | Abb Research Ltd | A method for epitaxially growing objects and a device for such a growth |
| DE19603323A1 (de) * | 1996-01-30 | 1997-08-07 | Siemens Ag | Verfahren und Vorrichtung zum Herstellen von SiC durch CVD mit verbesserter Gasausnutzung |
| SE9600704D0 (sv) * | 1996-02-26 | 1996-02-26 | Abb Research Ltd | A susceptor for a device for epitaxially growing objects and such a device |
| JP4050318B2 (ja) | 1996-02-26 | 2008-02-20 | クリー、インコーポレイテッド | デバイスなどの物体をエピタキシャル成長させる装置用のサセプタ |
| SE9600705D0 (sv) * | 1996-02-26 | 1996-02-26 | Abb Research Ltd | A susceptor for a device for epitaxially growing objects and such a device |
| US5747113A (en) | 1996-07-29 | 1998-05-05 | Tsai; Charles Su-Chang | Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation |
| DE19642673A1 (de) | 1996-10-16 | 1998-04-23 | Widia Gmbh | Mikrowellenofen und Bauteile hierfür |
| US6039812A (en) | 1996-10-21 | 2000-03-21 | Abb Research Ltd. | Device for epitaxially growing objects and method for such a growth |
| US5759263A (en) | 1996-12-05 | 1998-06-02 | Abb Research Ltd. | Device and a method for epitaxially growing objects by cvd |
| US5667587A (en) * | 1996-12-18 | 1997-09-16 | Northrop Gruman Corporation | Apparatus for growing silicon carbide crystals |
| US5788777A (en) | 1997-03-06 | 1998-08-04 | Burk, Jr.; Albert A. | Susceptor for an epitaxial growth factor |
| US6217662B1 (en) * | 1997-03-24 | 2001-04-17 | Cree, Inc. | Susceptor designs for silicon carbide thin films |
| JP2001518706A (ja) * | 1997-09-30 | 2001-10-16 | インフィネオン テクノロジース アクチエンゲゼルシャフト | インプランテーションによってドープされたシリコンカーバード半導体を熱的に回復させる方法 |
| US6005226A (en) | 1997-11-24 | 1999-12-21 | Steag-Rtp Systems | Rapid thermal processing (RTP) system with gas driven rotating substrate |
| DE19803423C2 (de) * | 1998-01-29 | 2001-02-08 | Siemens Ag | Substrathalterung für SiC-Epitaxie und Verfahren zum Herstellen eines Einsatzes für einen Suszeptor |
| SE9801190D0 (sv) | 1998-04-06 | 1998-04-06 | Abb Research Ltd | A method and a device for epitaxial growth of objects by Chemical Vapour Deposition |
| FR2786208B1 (fr) * | 1998-11-25 | 2001-02-09 | Centre Nat Rech Scient | Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre |
| US6449428B2 (en) | 1998-12-11 | 2002-09-10 | Mattson Technology Corp. | Gas driven rotating susceptor for rapid thermal processing (RTP) system |
| US6368404B1 (en) * | 1999-04-23 | 2002-04-09 | Emcore Corporation | Induction heated chemical vapor deposition reactor |
| US6331212B1 (en) * | 2000-04-17 | 2001-12-18 | Avansys, Llc | Methods and apparatus for thermally processing wafers |
| US6399510B1 (en) * | 2000-09-12 | 2002-06-04 | Applied Materials, Inc. | Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates |
| US6569250B2 (en) * | 2001-01-08 | 2003-05-27 | Cree, Inc. | Gas-driven rotation apparatus and method for forming silicon carbide layers |
-
2001
- 2001-10-30 US US10/017,492 patent/US6896738B2/en not_active Expired - Lifetime
-
2002
- 2002-10-24 EP EP02784266A patent/EP1449407B1/en not_active Expired - Lifetime
- 2002-10-24 CA CA002464855A patent/CA2464855A1/en not_active Abandoned
- 2002-10-24 AU AU2002348053A patent/AU2002348053A1/en not_active Abandoned
- 2002-10-24 DE DE60229549T patent/DE60229549D1/de not_active Expired - Lifetime
- 2002-10-24 WO PCT/US2002/034090 patent/WO2003039195A2/en not_active Ceased
- 2002-10-24 CN CNA028265289A patent/CN1611095A/zh active Pending
- 2002-10-24 KR KR1020047006333A patent/KR20050039709A/ko not_active Withdrawn
- 2002-10-24 AT AT02784266T patent/ATE412331T1/de not_active IP Right Cessation
- 2002-10-24 JP JP2003541310A patent/JP2005508097A/ja active Pending
- 2002-10-29 TW TW091132074A patent/TWI274081B/zh not_active IP Right Cessation
-
2003
- 2003-11-14 US US10/714,214 patent/US7390367B1/en not_active Expired - Lifetime
-
2008
- 2008-05-15 US US12/121,072 patent/US9155131B2/en not_active Expired - Lifetime
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