JP2005503664A - 電子デバイスおよび組成物 - Google Patents

電子デバイスおよび組成物 Download PDF

Info

Publication number
JP2005503664A
JP2005503664A JP2003528723A JP2003528723A JP2005503664A JP 2005503664 A JP2005503664 A JP 2005503664A JP 2003528723 A JP2003528723 A JP 2003528723A JP 2003528723 A JP2003528723 A JP 2003528723A JP 2005503664 A JP2005503664 A JP 2005503664A
Authority
JP
Japan
Prior art keywords
layer
substituted
composition
alkoxysilane
surfactant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003528723A
Other languages
English (en)
Japanese (ja)
Inventor
アブラハム、アール．バルケネンデ
フェムケ、ケー．デ、セーエ
ヤン、シー．クリーゲ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JP2005503664A publication Critical patent/JP2005503664A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B37/00—Compounds having molecular sieve properties but not having base-exchange properties
    • C01B37/02—Crystalline silica-polymorphs, e.g. silicalites dealuminated aluminosilicate zeolites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/02—Polysilicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
JP2003528723A 2001-09-17 2002-09-12 電子デバイスおよび組成物 Pending JP2005503664A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP01203536 2001-09-17
EP02076262 2002-03-28
PCT/IB2002/003787 WO2003024869A1 (en) 2001-09-17 2002-09-12 Electronic device comprising a mesoporous silica layer and composition for preparing the mesoporous silica layer

Publications (1)

Publication Number Publication Date
JP2005503664A true JP2005503664A (ja) 2005-02-03

Family

ID=26076994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003528723A Pending JP2005503664A (ja) 2001-09-17 2002-09-12 電子デバイスおよび組成物

Country Status (7)

Country Link
US (2) US20040238901A1 (zh)
EP (1) EP1427671A1 (zh)
JP (1) JP2005503664A (zh)
KR (1) KR20040039368A (zh)
CN (1) CN1313371C (zh)
AU (1) AU2002321783A1 (zh)
WO (1) WO2003024869A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008509800A (ja) * 2004-08-03 2008-04-03 エシロール アテルナジオナール カンパニー ジェネラーレ デ オプティック メソポーラス層を被覆した基材の生産方法およびその眼科用光学部品への利用
WO2008111636A1 (ja) 2007-03-13 2008-09-18 Mitsubishi Chemical Corporation シリカ多孔質体、光学用途積層体及び組成物、並びに、シリカ多孔質体の製造方法
JP2009525498A (ja) * 2006-02-02 2009-07-09 エシロール アテルナジオナール カンパニー ジェネラーレ デ オプティック 屈折率プロファイルを有するメソ細孔質被覆層を備える製品およびその製造方法
JP2010530137A (ja) * 2007-06-15 2010-09-02 エスビーエー マテリアルズ，インコーポレイテッド． 低ｋ誘電

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI113895B (fi) * 2003-02-27 2004-06-30 Metso Corp Lämpötiladetektori/indikaattori
JP2008505476A (ja) 2004-06-30 2008-02-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ナノワイヤによってコンタクトがとられる導電性材料の層を有する電子装置を製造する方法
US20060220251A1 (en) * 2005-03-31 2006-10-05 Grant Kloster Reducing internal film stress in dielectric film
KR100692212B1 (ko) 2005-07-06 2007-03-14 주식회사 태성환경연구소 다공성 유·무기 혼성 실리카 겔을 유효성분으로 하는 공기중 휘발성 유기화합물 혹은 수중 오일 성분 흡착제
KR100811877B1 (ko) 2006-07-31 2008-03-11 울산대학교 산학협력단 방향족 환을 포함하는 유기물질 흡착용 실리카 겔
TWI439494B (zh) * 2007-02-27 2014-06-01 Braggone Oy 產生有機矽氧烷聚合物的方法
US8182864B2 (en) * 2007-08-14 2012-05-22 Postech Academy-Industry Foundaction Modification method of microchannels of PDMS microchip using sol-gel solution
JP6004528B2 (ja) 2011-08-29 2016-10-12 地方独立行政法人東京都立産業技術研究センター 多孔質シリカ内包粒子の製造方法および多孔質シリカ
TWI495105B (zh) * 2011-12-21 2015-08-01 Nat Applied Res Laboratories 金屬閘極奈米線薄膜電晶體元件及其製造方法
US8987071B2 (en) * 2011-12-21 2015-03-24 National Applied Research Laboratories Thin film transistor and fabricating method
CN103579102A (zh) * 2013-11-07 2014-02-12 复旦大学 一种具有优异力学性能的低介电常数薄膜的制备方法
US10573552B2 (en) 2018-03-15 2020-02-25 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100425356B1 (ko) * 1997-11-21 2004-03-31 아사히 가세이 가부시키가이샤 메소포러스 실리카, 그 합성방법 및 용도
JP2000176236A (ja) * 1998-12-14 2000-06-27 Asahi Chem Ind Co Ltd 湿度調節材料
US6383466B1 (en) * 1998-12-28 2002-05-07 Battelle Memorial Institute Method of dehydroxylating a hydroxylated material and method of making a mesoporous film
IL143589A0 (en) * 1998-12-23 2002-04-21 Battelle Memorial Institute Mesoporous silica film from a solution containing a surfactant and methods of making same
US6329017B1 (en) * 1998-12-23 2001-12-11 Battelle Memorial Institute Mesoporous silica film from a solution containing a surfactant and methods of making same
US6423770B1 (en) * 1999-07-15 2002-07-23 Lucent Technologies Inc. Silicate material and process for fabricating silicate material
CN1120801C (zh) * 2000-07-17 2003-09-10 中国科学院山西煤炭化学研究所 一种双孔分子筛及其制备方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008509800A (ja) * 2004-08-03 2008-04-03 エシロール アテルナジオナール カンパニー ジェネラーレ デ オプティック メソポーラス層を被覆した基材の生産方法およびその眼科用光学部品への利用
JP2009525498A (ja) * 2006-02-02 2009-07-09 エシロール アテルナジオナール カンパニー ジェネラーレ デ オプティック 屈折率プロファイルを有するメソ細孔質被覆層を備える製品およびその製造方法
WO2008111636A1 (ja) 2007-03-13 2008-09-18 Mitsubishi Chemical Corporation シリカ多孔質体、光学用途積層体及び組成物、並びに、シリカ多孔質体の製造方法
JP2010530137A (ja) * 2007-06-15 2010-09-02 エスビーエー マテリアルズ，インコーポレイテッド． 低ｋ誘電

Also Published As

Publication number Publication date
CN1555342A (zh) 2004-12-15
EP1427671A1 (en) 2004-06-16
WO2003024869A8 (en) 2003-05-15
AU2002321783A1 (en) 2003-04-01
US20040238901A1 (en) 2004-12-02
CN1313371C (zh) 2007-05-02
US20070037411A1 (en) 2007-02-15
KR20040039368A (ko) 2004-05-10
WO2003024869A1 (en) 2003-03-27

Similar Documents

Publication Publication Date Title
US20070037411A1 (en) Method of manufacturing an electronic device
RU2180671C2 (ru) Композиция алкоксисилан/органический полимер для использования в получении изолирующей тонкой пленки и ее применение
TWI238844B (en) Silicon-based composition, low dielectric constant film, semiconductor device, and method for producing low dielectric constant film
KR100561884B1 (ko) 낮은 유전 상수를 갖는 유전 물질의 제조용 조성물
US20060145306A1 (en) Composition for forming low dielectric thin film comprising porous nanoparticles and method of preparing low dielectric thin film using the same
US5665849A (en) Modified hydrogen silsesquioxane spin-on glass
EP1321974B1 (en) Porous siliceous film having low permittivity, semiconductor devices and coating composition
KR20010074860A (ko) 실란계 나노다공성 실리카 박막 및 그 제조방법
KR20010053433A (ko) 나노 다공성 실리카의 증착방법
EP1232998B1 (en) Low-permittivity porous siliceous film, semiconductor devices having such films, and coating composition for forming the film
JP2006500769A (ja) 低ｋ材料用の中間層接着促進剤
US7470634B2 (en) Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane
KR20110021951A (ko) 다공성 물질의 제조 방법 및 그 방법으로 제조된 다공성 물질
JP2003529202A (ja) 重合体分解から得られる低誘電性ナノ多孔性材料
WO2003088343A1 (en) New porogens for porous silica dielectric for integral circuit applications
US6809041B2 (en) Low dielectric constant films derived by sol-gel processing of a hyperbranched polycarbosilane
WO2000013221A1 (en) Process for optimizing mechanical strength of nanoporous silica
KR100572801B1 (ko) 기계적 특성이 우수한 절연막 코팅 조성물
JP2001520805A (ja) 等級化された密度を有するナノポーラス誘電体フィルム及びそのようなフィルムの製造方法
JP2004210579A (ja) 多孔質シリカフィルムの製造方法、該方法により得られた多孔質シリカフィルム、並びにそれからなる半導体装置
KR100488347B1 (ko) 실록산계 수지 및 이를 이용한 반도체 층간 절연막의형성방법
US20060135633A1 (en) Porous low-dielectric constant (k) thin film with controlled solvent diffusion
KR101023916B1 (ko) 분자 다면체형 실세스퀴옥산을 이용한 반도체 층간절연막의 형성방법
TWI297511B (en) Electronic device and composition
TW200306282A (en) New porogens for porous silica dielectric for integral circuit applications

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050912

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20080612

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080929

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081024

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090324