JP2005333148A - 半導体ウエハの特性を測定するための仕事関数が制御されたプローブとその使用方法 - Google Patents

半導体ウエハの特性を測定するための仕事関数が制御されたプローブとその使用方法 Download PDF

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Publication number
JP2005333148A
JP2005333148A JP2005170117A JP2005170117A JP2005333148A JP 2005333148 A JP2005333148 A JP 2005333148A JP 2005170117 A JP2005170117 A JP 2005170117A JP 2005170117 A JP2005170117 A JP 2005170117A JP 2005333148 A JP2005333148 A JP 2005333148A
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JP
Japan
Prior art keywords
work function
coating
semiconductor wafer
contact
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005170117A
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English (en)
Japanese (ja)
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JP2005333148A5 (OSRAM
Inventor
William H Howland Jr
ウィリアム・エイチ・ハウランド・ジュニア
Robert J Hillard
ロバート・ジェイ・ヒラード
Steven Chi-Shin Hung
スティーヴン・チン−シン・フン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Solid State Measurements Inc
Original Assignee
Applied Materials Inc
Solid State Measurements Inc
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Filing date
Publication date
Application filed by Applied Materials Inc, Solid State Measurements Inc filed Critical Applied Materials Inc
Publication of JP2005333148A publication Critical patent/JP2005333148A/ja
Publication of JP2005333148A5 publication Critical patent/JP2005333148A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP2005170117A 2004-05-14 2005-05-13 半導体ウエハの特性を測定するための仕事関数が制御されたプローブとその使用方法 Pending JP2005333148A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/845,815 US7023231B2 (en) 2004-05-14 2004-05-14 Work function controlled probe for measuring properties of a semiconductor wafer and method of use thereof

Publications (2)

Publication Number Publication Date
JP2005333148A true JP2005333148A (ja) 2005-12-02
JP2005333148A5 JP2005333148A5 (OSRAM) 2008-06-26

Family

ID=34939824

Family Applications (1)

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JP2005170117A Pending JP2005333148A (ja) 2004-05-14 2005-05-13 半導体ウエハの特性を測定するための仕事関数が制御されたプローブとその使用方法

Country Status (6)

Country Link
US (1) US7023231B2 (OSRAM)
EP (1) EP1596212B1 (OSRAM)
JP (1) JP2005333148A (OSRAM)
AT (1) ATE408154T1 (OSRAM)
DE (1) DE602005009603D1 (OSRAM)
TW (1) TWI391686B (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009092554A (ja) * 2007-10-10 2009-04-30 Ulvac Japan Ltd 導電性プローブ、導電性プローブの製造方法、及び磁気特性測定方法
JP2015158464A (ja) * 2014-02-25 2015-09-03 セイコーインスツル株式会社 弾性プロープおよびそれを用いる検査方法

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US6002263A (en) * 1997-06-06 1999-12-14 Cascade Microtech, Inc. Probe station having inner and outer shielding
US6034533A (en) * 1997-06-10 2000-03-07 Tervo; Paul A. Low-current pogo probe card
US6256882B1 (en) 1998-07-14 2001-07-10 Cascade Microtech, Inc. Membrane probing system
US6578264B1 (en) * 1999-06-04 2003-06-17 Cascade Microtech, Inc. Method for constructing a membrane probe using a depression
US6445202B1 (en) 1999-06-30 2002-09-03 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
US6838890B2 (en) * 2000-02-25 2005-01-04 Cascade Microtech, Inc. Membrane probing system
US6965226B2 (en) 2000-09-05 2005-11-15 Cascade Microtech, Inc. Chuck for holding a device under test
US6914423B2 (en) 2000-09-05 2005-07-05 Cascade Microtech, Inc. Probe station
DE10143173A1 (de) 2000-12-04 2002-06-06 Cascade Microtech Inc Wafersonde
US7355420B2 (en) 2001-08-21 2008-04-08 Cascade Microtech, Inc. Membrane probing system
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US6777964B2 (en) 2002-01-25 2004-08-17 Cascade Microtech, Inc. Probe station
US6951846B2 (en) * 2002-03-07 2005-10-04 The United States Of America As Represented By The Secretary Of The Army Artemisinins with improved stability and bioavailability for therapeutic drug development and application
JP2005527823A (ja) 2002-05-23 2005-09-15 カスケード マイクロテック インコーポレイテッド デバイスのテスト用プローブ
US6847219B1 (en) 2002-11-08 2005-01-25 Cascade Microtech, Inc. Probe station with low noise characteristics
US6724205B1 (en) 2002-11-13 2004-04-20 Cascade Microtech, Inc. Probe for combined signals
US7250779B2 (en) 2002-11-25 2007-07-31 Cascade Microtech, Inc. Probe station with low inductance path
US6861856B2 (en) 2002-12-13 2005-03-01 Cascade Microtech, Inc. Guarded tub enclosure
US7221172B2 (en) 2003-05-06 2007-05-22 Cascade Microtech, Inc. Switched suspended conductor and connection
US7492172B2 (en) 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test
US7057404B2 (en) 2003-05-23 2006-06-06 Sharp Laboratories Of America, Inc. Shielded probe for testing a device under test
WO2006017078A2 (en) 2004-07-07 2006-02-16 Cascade Microtech, Inc. Probe head having a membrane suspended probe
US7250626B2 (en) 2003-10-22 2007-07-31 Cascade Microtech, Inc. Probe testing structure
US7321234B2 (en) * 2003-12-18 2008-01-22 Lecroy Corporation Resistive test probe tips and applications therefor
WO2005065258A2 (en) 2003-12-24 2005-07-21 Cascade Microtech, Inc. Active wafer probe
US7187188B2 (en) 2003-12-24 2007-03-06 Cascade Microtech, Inc. Chuck with integrated wafer support
US7176705B2 (en) 2004-06-07 2007-02-13 Cascade Microtech, Inc. Thermal optical chuck
US7330041B2 (en) 2004-06-14 2008-02-12 Cascade Microtech, Inc. Localizing a temperature of a device for testing
KR20070058522A (ko) 2004-09-13 2007-06-08 캐스케이드 마이크로테크 인코포레이티드 양측 프루빙 구조
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
US7656172B2 (en) 2005-01-31 2010-02-02 Cascade Microtech, Inc. System for testing semiconductors
US7282941B2 (en) * 2005-04-05 2007-10-16 Solid State Measurements, Inc. Method of measuring semiconductor wafers with an oxide enhanced probe
US7449899B2 (en) 2005-06-08 2008-11-11 Cascade Microtech, Inc. Probe for high frequency signals
US20070294047A1 (en) * 2005-06-11 2007-12-20 Leonard Hayden Calibration system
EP1932003A2 (en) 2005-06-13 2008-06-18 Cascade Microtech, Inc. Wideband active-passive differential signal probe
US7637009B2 (en) * 2006-02-27 2009-12-29 Sv Probe Pte. Ltd. Approach for fabricating probe elements for probe card assemblies using a reusable substrate
DE112007001399T5 (de) 2006-06-09 2009-05-07 Cascade Microtech, Inc., Beaverton Messfühler für differentielle Signale mit integrierter Symmetrieschaltung
US7723999B2 (en) 2006-06-12 2010-05-25 Cascade Microtech, Inc. Calibration structures for differential signal probing
US7403028B2 (en) 2006-06-12 2008-07-22 Cascade Microtech, Inc. Test structure and probe for differential signals
US7764072B2 (en) 2006-06-12 2010-07-27 Cascade Microtech, Inc. Differential signal probing system
US7443186B2 (en) 2006-06-12 2008-10-28 Cascade Microtech, Inc. On-wafer test structures for differential signals
US20080290889A1 (en) * 2007-05-24 2008-11-27 Solid State Measurements, Inc. Method of destructive testing the dielectric layer of a semiconductor wafer or sample
US7876114B2 (en) 2007-08-08 2011-01-25 Cascade Microtech, Inc. Differential waveguide probe
US7888957B2 (en) 2008-10-06 2011-02-15 Cascade Microtech, Inc. Probing apparatus with impedance optimized interface
WO2010059247A2 (en) 2008-11-21 2010-05-27 Cascade Microtech, Inc. Replaceable coupon for a probing apparatus
US8319503B2 (en) 2008-11-24 2012-11-27 Cascade Microtech, Inc. Test apparatus for measuring a characteristic of a device under test
DE102012205352B4 (de) * 2012-02-24 2022-12-08 Rohde & Schwarz GmbH & Co. Kommanditgesellschaft Adapter für einen Tastkopf zur Messung eines differenziellen Signals
US20200233033A1 (en) * 2019-01-17 2020-07-23 Intel Corporation Test probe for wafer-level and panel-level testing
US12411155B2 (en) 2019-01-29 2025-09-09 Yokowo Co., Ltd. Plunger and contact probe

Citations (6)

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JPS60106993A (ja) * 1983-11-15 1985-06-12 イ−・アイ・デユポン・ドウ・ヌム−ル・アンド・カンパニ− はんだ接合性パラジウム−ニツケル被膜及びその製造方法
JPH0766250A (ja) * 1993-08-30 1995-03-10 Sumitomo Metal Ind Ltd 半導体表面薄膜の評価方法
JPH10185878A (ja) * 1996-12-26 1998-07-14 Mitsubishi Electric Corp 絶縁破壊測定方法
JPH11237406A (ja) * 1997-10-02 1999-08-31 Internatl Business Mach Corp <Ibm> メッキしたプローブ構造
JP2002131334A (ja) * 2000-10-24 2002-05-09 Nec Yamaguchi Ltd プローブ針、プローブカード、及びプローブカードの作製方法
JP2006508495A (ja) * 2002-03-18 2006-03-09 ナノネクサス インク 小型化されたコンタクトスプリング

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Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
JPS60106993A (ja) * 1983-11-15 1985-06-12 イ−・アイ・デユポン・ドウ・ヌム−ル・アンド・カンパニ− はんだ接合性パラジウム−ニツケル被膜及びその製造方法
JPH0766250A (ja) * 1993-08-30 1995-03-10 Sumitomo Metal Ind Ltd 半導体表面薄膜の評価方法
JPH10185878A (ja) * 1996-12-26 1998-07-14 Mitsubishi Electric Corp 絶縁破壊測定方法
JPH11237406A (ja) * 1997-10-02 1999-08-31 Internatl Business Mach Corp <Ibm> メッキしたプローブ構造
JP2002131334A (ja) * 2000-10-24 2002-05-09 Nec Yamaguchi Ltd プローブ針、プローブカード、及びプローブカードの作製方法
JP2006508495A (ja) * 2002-03-18 2006-03-09 ナノネクサス インク 小型化されたコンタクトスプリング

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009092554A (ja) * 2007-10-10 2009-04-30 Ulvac Japan Ltd 導電性プローブ、導電性プローブの製造方法、及び磁気特性測定方法
JP2015158464A (ja) * 2014-02-25 2015-09-03 セイコーインスツル株式会社 弾性プロープおよびそれを用いる検査方法

Also Published As

Publication number Publication date
EP1596212B1 (en) 2008-09-10
EP1596212A1 (en) 2005-11-16
DE602005009603D1 (de) 2008-10-23
ATE408154T1 (de) 2008-09-15
US20050253618A1 (en) 2005-11-17
US7023231B2 (en) 2006-04-04
TW200538748A (en) 2005-12-01
TWI391686B (zh) 2013-04-01

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