ATE408154T1 - Funktionssteuerbare prüfnadel zur messung von halbleiterwafern und benutzungsverfahren - Google Patents
Funktionssteuerbare prüfnadel zur messung von halbleiterwafern und benutzungsverfahrenInfo
- Publication number
- ATE408154T1 ATE408154T1 AT05104011T AT05104011T ATE408154T1 AT E408154 T1 ATE408154 T1 AT E408154T1 AT 05104011 T AT05104011 T AT 05104011T AT 05104011 T AT05104011 T AT 05104011T AT E408154 T1 ATE408154 T1 AT E408154T1
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor wafer
- electrical
- semiconductor wafers
- test needle
- controller test
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2648—Characterising semiconductor materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/845,815 US7023231B2 (en) | 2004-05-14 | 2004-05-14 | Work function controlled probe for measuring properties of a semiconductor wafer and method of use thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE408154T1 true ATE408154T1 (de) | 2008-09-15 |
Family
ID=34939824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05104011T ATE408154T1 (de) | 2004-05-14 | 2005-05-13 | Funktionssteuerbare prüfnadel zur messung von halbleiterwafern und benutzungsverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US7023231B2 (de) |
EP (1) | EP1596212B1 (de) |
JP (1) | JP2005333148A (de) |
AT (1) | ATE408154T1 (de) |
DE (1) | DE602005009603D1 (de) |
TW (1) | TWI391686B (de) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5345170A (en) * | 1992-06-11 | 1994-09-06 | Cascade Microtech, Inc. | Wafer probe station having integrated guarding, Kelvin connection and shielding systems |
US6232789B1 (en) | 1997-05-28 | 2001-05-15 | Cascade Microtech, Inc. | Probe holder for low current measurements |
US5729150A (en) * | 1995-12-01 | 1998-03-17 | Cascade Microtech, Inc. | Low-current probe card with reduced triboelectric current generating cables |
US5914613A (en) | 1996-08-08 | 1999-06-22 | Cascade Microtech, Inc. | Membrane probing system with local contact scrub |
US6002263A (en) * | 1997-06-06 | 1999-12-14 | Cascade Microtech, Inc. | Probe station having inner and outer shielding |
US6034533A (en) * | 1997-06-10 | 2000-03-07 | Tervo; Paul A. | Low-current pogo probe card |
US6256882B1 (en) | 1998-07-14 | 2001-07-10 | Cascade Microtech, Inc. | Membrane probing system |
US6578264B1 (en) * | 1999-06-04 | 2003-06-17 | Cascade Microtech, Inc. | Method for constructing a membrane probe using a depression |
US6838890B2 (en) * | 2000-02-25 | 2005-01-04 | Cascade Microtech, Inc. | Membrane probing system |
US6914423B2 (en) | 2000-09-05 | 2005-07-05 | Cascade Microtech, Inc. | Probe station |
US6965226B2 (en) | 2000-09-05 | 2005-11-15 | Cascade Microtech, Inc. | Chuck for holding a device under test |
DE20114544U1 (de) | 2000-12-04 | 2002-02-21 | Cascade Microtech, Inc., Beaverton, Oreg. | Wafersonde |
US7355420B2 (en) | 2001-08-21 | 2008-04-08 | Cascade Microtech, Inc. | Membrane probing system |
US6951846B2 (en) * | 2002-03-07 | 2005-10-04 | The United States Of America As Represented By The Secretary Of The Army | Artemisinins with improved stability and bioavailability for therapeutic drug development and application |
US6861856B2 (en) * | 2002-12-13 | 2005-03-01 | Cascade Microtech, Inc. | Guarded tub enclosure |
US7057404B2 (en) | 2003-05-23 | 2006-06-06 | Sharp Laboratories Of America, Inc. | Shielded probe for testing a device under test |
US7492172B2 (en) | 2003-05-23 | 2009-02-17 | Cascade Microtech, Inc. | Chuck for holding a device under test |
US7250626B2 (en) | 2003-10-22 | 2007-07-31 | Cascade Microtech, Inc. | Probe testing structure |
US7321234B2 (en) * | 2003-12-18 | 2008-01-22 | Lecroy Corporation | Resistive test probe tips and applications therefor |
WO2005065258A2 (en) | 2003-12-24 | 2005-07-21 | Cascade Microtech, Inc. | Active wafer probe |
US7187188B2 (en) | 2003-12-24 | 2007-03-06 | Cascade Microtech, Inc. | Chuck with integrated wafer support |
US7420381B2 (en) | 2004-09-13 | 2008-09-02 | Cascade Microtech, Inc. | Double sided probing structures |
US7535247B2 (en) | 2005-01-31 | 2009-05-19 | Cascade Microtech, Inc. | Interface for testing semiconductors |
US7656172B2 (en) | 2005-01-31 | 2010-02-02 | Cascade Microtech, Inc. | System for testing semiconductors |
US7282941B2 (en) * | 2005-04-05 | 2007-10-16 | Solid State Measurements, Inc. | Method of measuring semiconductor wafers with an oxide enhanced probe |
US20070294047A1 (en) * | 2005-06-11 | 2007-12-20 | Leonard Hayden | Calibration system |
US7637009B2 (en) * | 2006-02-27 | 2009-12-29 | Sv Probe Pte. Ltd. | Approach for fabricating probe elements for probe card assemblies using a reusable substrate |
US7764072B2 (en) | 2006-06-12 | 2010-07-27 | Cascade Microtech, Inc. | Differential signal probing system |
US7403028B2 (en) | 2006-06-12 | 2008-07-22 | Cascade Microtech, Inc. | Test structure and probe for differential signals |
US7723999B2 (en) | 2006-06-12 | 2010-05-25 | Cascade Microtech, Inc. | Calibration structures for differential signal probing |
US20080290889A1 (en) * | 2007-05-24 | 2008-11-27 | Solid State Measurements, Inc. | Method of destructive testing the dielectric layer of a semiconductor wafer or sample |
US7876114B2 (en) | 2007-08-08 | 2011-01-25 | Cascade Microtech, Inc. | Differential waveguide probe |
JP5053788B2 (ja) * | 2007-10-10 | 2012-10-17 | 株式会社アルバック | 導電性プローブ、導電性プローブの製造方法、及び磁気特性測定方法 |
US7888957B2 (en) | 2008-10-06 | 2011-02-15 | Cascade Microtech, Inc. | Probing apparatus with impedance optimized interface |
US8410806B2 (en) | 2008-11-21 | 2013-04-02 | Cascade Microtech, Inc. | Replaceable coupon for a probing apparatus |
US8319503B2 (en) | 2008-11-24 | 2012-11-27 | Cascade Microtech, Inc. | Test apparatus for measuring a characteristic of a device under test |
DE102012205352B4 (de) * | 2012-02-24 | 2022-12-08 | Rohde & Schwarz GmbH & Co. Kommanditgesellschaft | Adapter für einen Tastkopf zur Messung eines differenziellen Signals |
JP6301680B2 (ja) * | 2014-02-25 | 2018-03-28 | エイブリック株式会社 | 弾性プローブ |
US20200233033A1 (en) * | 2019-01-17 | 2020-07-23 | Intel Corporation | Test probe for wafer-level and panel-level testing |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4463060A (en) * | 1983-11-15 | 1984-07-31 | E. I. Du Pont De Nemours And Company | Solderable palladium-nickel coatings and method of making said coatings |
US5378971A (en) * | 1990-11-30 | 1995-01-03 | Tokyo Electron Limited | Probe and a method of manufacturing the same |
JP2917674B2 (ja) * | 1992-06-03 | 1999-07-12 | 松下電器産業株式会社 | 走査トンネル顕微鏡用探針およびその製造方法 |
JP2900764B2 (ja) * | 1993-08-30 | 1999-06-02 | 住友金属工業株式会社 | 半導体表面薄膜の評価方法 |
US5500607A (en) * | 1993-12-22 | 1996-03-19 | International Business Machines Corporation | Probe-oxide-semiconductor method and apparatus for measuring oxide charge on a semiconductor wafer |
JPH10185878A (ja) * | 1996-12-26 | 1998-07-14 | Mitsubishi Electric Corp | 絶縁破壊測定方法 |
US5796121A (en) * | 1997-03-25 | 1998-08-18 | International Business Machines Corporation | Thin film transistors fabricated on plastic substrates |
US6139759A (en) * | 1997-07-08 | 2000-10-31 | International Business Machines Corporation | Method of manufacturing silicided silicon microtips for scanning probe microscopy |
JP3280327B2 (ja) * | 1997-10-02 | 2002-05-13 | インターナショナル・ビジネス・マシーンズ・コーポレーション | テスト・プローブ構造体及びその製造方法 |
US6181144B1 (en) * | 1998-02-25 | 2001-01-30 | Micron Technology, Inc. | Semiconductor probe card having resistance measuring circuitry and method fabrication |
EP1256006B1 (de) * | 1999-10-19 | 2006-07-19 | Solid State Measurements, Inc. | Nicht-invasive elektrische messung von halbleiterscheiben |
US6741093B2 (en) * | 2000-10-19 | 2004-05-25 | Solid State Measurements, Inc. | Method of determining one or more properties of a semiconductor wafer |
JP2002131334A (ja) * | 2000-10-24 | 2002-05-09 | Nec Yamaguchi Ltd | プローブ針、プローブカード、及びプローブカードの作製方法 |
CN1643741A (zh) * | 2002-03-18 | 2005-07-20 | 纳米纳克斯公司 | 一种微型接触弹簧 |
US6632691B1 (en) * | 2002-04-11 | 2003-10-14 | Solid State Measurements, Inc. | Apparatus and method for determining doping concentration of a semiconductor wafer |
US6842029B2 (en) * | 2002-04-11 | 2005-01-11 | Solid State Measurements, Inc. | Non-invasive electrical measurement of semiconductor wafers |
US6894519B2 (en) * | 2002-04-11 | 2005-05-17 | Solid State Measurements, Inc. | Apparatus and method for determining electrical properties of a semiconductor wafer |
US6612161B1 (en) * | 2002-07-23 | 2003-09-02 | Fidelica Microsystems, Inc. | Atomic force microscopy measurements of contact resistance and current-dependent stiction |
US6836139B2 (en) * | 2002-10-22 | 2004-12-28 | Solid State Measurments, Inc. | Method and apparatus for determining defect and impurity concentration in semiconducting material of a semiconductor wafer |
US6879176B1 (en) * | 2003-11-04 | 2005-04-12 | Solid State Measurements, Inc. | Conductance-voltage (GV) based method for determining leakage current in dielectrics |
-
2004
- 2004-05-14 US US10/845,815 patent/US7023231B2/en not_active Expired - Fee Related
-
2005
- 2005-05-11 TW TW094115310A patent/TWI391686B/zh not_active IP Right Cessation
- 2005-05-13 EP EP05104011A patent/EP1596212B1/de not_active Not-in-force
- 2005-05-13 AT AT05104011T patent/ATE408154T1/de not_active IP Right Cessation
- 2005-05-13 DE DE602005009603T patent/DE602005009603D1/de not_active Expired - Fee Related
- 2005-05-13 JP JP2005170117A patent/JP2005333148A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1596212A1 (de) | 2005-11-16 |
JP2005333148A (ja) | 2005-12-02 |
US7023231B2 (en) | 2006-04-04 |
DE602005009603D1 (de) | 2008-10-23 |
EP1596212B1 (de) | 2008-09-10 |
US20050253618A1 (en) | 2005-11-17 |
TWI391686B (zh) | 2013-04-01 |
TW200538748A (en) | 2005-12-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |