ATE341834T1 - Verfahren und vorrichtung zum testen von halbleiterwafern - Google Patents

Verfahren und vorrichtung zum testen von halbleiterwafern

Info

Publication number
ATE341834T1
ATE341834T1 AT02078482T AT02078482T ATE341834T1 AT E341834 T1 ATE341834 T1 AT E341834T1 AT 02078482 T AT02078482 T AT 02078482T AT 02078482 T AT02078482 T AT 02078482T AT E341834 T1 ATE341834 T1 AT E341834T1
Authority
AT
Austria
Prior art keywords
location
semiconductor layer
base structure
sample chuck
semiconductor wafers
Prior art date
Application number
AT02078482T
Other languages
English (en)
Inventor
William J Alexander
Original Assignee
Solid State Measurements Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solid State Measurements Inc filed Critical Solid State Measurements Inc
Application granted granted Critical
Publication of ATE341834T1 publication Critical patent/ATE341834T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
AT02078482T 2001-08-22 2002-08-22 Verfahren und vorrichtung zum testen von halbleiterwafern ATE341834T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31406501P 2001-08-22 2001-08-22
US10/215,383 US6851096B2 (en) 2001-08-22 2002-08-08 Method and apparatus for testing semiconductor wafers

Publications (1)

Publication Number Publication Date
ATE341834T1 true ATE341834T1 (de) 2006-10-15

Family

ID=26909979

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02078482T ATE341834T1 (de) 2001-08-22 2002-08-22 Verfahren und vorrichtung zum testen von halbleiterwafern

Country Status (6)

Country Link
US (1) US6851096B2 (de)
EP (1) EP1286389B1 (de)
JP (1) JP4163911B2 (de)
AT (1) ATE341834T1 (de)
DE (1) DE60215090D1 (de)
TW (1) TWI276190B (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5345170A (en) 1992-06-11 1994-09-06 Cascade Microtech, Inc. Wafer probe station having integrated guarding, Kelvin connection and shielding systems
US6380751B2 (en) 1992-06-11 2002-04-30 Cascade Microtech, Inc. Wafer probe station having environment control enclosure
US5561377A (en) 1995-04-14 1996-10-01 Cascade Microtech, Inc. System for evaluating probing networks
US6002263A (en) 1997-06-06 1999-12-14 Cascade Microtech, Inc. Probe station having inner and outer shielding
US6445202B1 (en) 1999-06-30 2002-09-03 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
US6965226B2 (en) 2000-09-05 2005-11-15 Cascade Microtech, Inc. Chuck for holding a device under test
US6914423B2 (en) 2000-09-05 2005-07-05 Cascade Microtech, Inc. Probe station
WO2003020467A1 (en) 2001-08-31 2003-03-13 Cascade Microtech, Inc. Optical testing device
US6777964B2 (en) 2002-01-25 2004-08-17 Cascade Microtech, Inc. Probe station
US6847219B1 (en) 2002-11-08 2005-01-25 Cascade Microtech, Inc. Probe station with low noise characteristics
US7250779B2 (en) 2002-11-25 2007-07-31 Cascade Microtech, Inc. Probe station with low inductance path
US6861856B2 (en) 2002-12-13 2005-03-01 Cascade Microtech, Inc. Guarded tub enclosure
US7221172B2 (en) 2003-05-06 2007-05-22 Cascade Microtech, Inc. Switched suspended conductor and connection
US7492172B2 (en) 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test
JP4051418B2 (ja) * 2003-05-29 2008-02-27 Ｔｄｋ株式会社 磁気ヘッドのスメア検出方法及び装置
US7250626B2 (en) 2003-10-22 2007-07-31 Cascade Microtech, Inc. Probe testing structure
US7187188B2 (en) 2003-12-24 2007-03-06 Cascade Microtech, Inc. Chuck with integrated wafer support
EP1754072A2 (de) 2004-06-07 2007-02-21 CASCADE MICROTECH, INC. (an Oregon corporation) Thermische optische einspannvorrichtung
US7330041B2 (en) 2004-06-14 2008-02-12 Cascade Microtech, Inc. Localizing a temperature of a device for testing
US7656172B2 (en) 2005-01-31 2010-02-02 Cascade Microtech, Inc. System for testing semiconductors
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
JP2007059704A (ja) * 2005-08-25 2007-03-08 Sumco Corp 貼合せ基板の製造方法及び貼合せ基板
US7733106B2 (en) * 2005-09-19 2010-06-08 Formfactor, Inc. Apparatus and method of testing singulated dies
US7511510B2 (en) * 2005-11-30 2009-03-31 International Business Machines Corporation Nanoscale fault isolation and measurement system
KR100763532B1 (ko) * 2006-08-17 2007-10-05 삼성전자주식회사 웨이퍼 지지장치, 웨이퍼 노광 장치 및 웨이퍼 지지방법
US7999563B2 (en) * 2008-06-24 2011-08-16 Cascade Microtech, Inc. Chuck for supporting and retaining a test substrate and a calibration substrate
US8319503B2 (en) 2008-11-24 2012-11-27 Cascade Microtech, Inc. Test apparatus for measuring a characteristic of a device under test
KR101520457B1 (ko) * 2009-02-12 2015-05-18 삼성전자주식회사 웨이퍼 검사 방법 및 웨이퍼 검사 장비
JP2012529007A (ja) * 2009-06-02 2012-11-15 東京エレクトロン株式会社 プローブカード
US8581217B2 (en) 2010-10-08 2013-11-12 Advanced Ion Beam Technology, Inc. Method for monitoring ion implantation
US20120105088A1 (en) * 2010-10-29 2012-05-03 Applied Materials, Inc. Apparatus and method for testing back-contact solar cells
US9136243B2 (en) * 2013-12-03 2015-09-15 Kulicke And Soffa Industries, Inc. Systems and methods for determining and adjusting a level of parallelism related to bonding of semiconductor elements

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE759342A (fr) * 1969-11-24 1971-05-24 Westinghouse Electric Corp Appareil et methode pour la determination automatique de la resistance d'etalement, la resistivite et la concentration d'impuretes dans des corps semi-conducteurs
US4931962A (en) * 1988-05-13 1990-06-05 Ade Corporation Fixture and nonrepeatable error compensation system
DE69133413D1 (de) * 1990-05-07 2004-10-21 Canon Kk Substratträger des Vakuumtyps
US5798286A (en) * 1995-09-22 1998-08-25 Tessera, Inc. Connecting multiple microelectronic elements with lead deformation
US6057171A (en) * 1997-09-25 2000-05-02 Frequency Technology, Inc. Methods for determining on-chip interconnect process parameters
US6741093B2 (en) * 2000-10-19 2004-05-25 Solid State Measurements, Inc. Method of determining one or more properties of a semiconductor wafer
US6429145B1 (en) * 2001-01-26 2002-08-06 International Business Machines Corporation Method of determining electrical properties of silicon-on-insulator wafers

Also Published As

Publication number Publication date
US20030071631A1 (en) 2003-04-17
JP4163911B2 (ja) 2008-10-08
JP2003100822A (ja) 2003-04-04
US6851096B2 (en) 2005-02-01
EP1286389A3 (de) 2005-01-12
DE60215090D1 (de) 2006-11-16
EP1286389B1 (de) 2006-10-04
EP1286389A2 (de) 2003-02-26
TWI276190B (en) 2007-03-11

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