ATE476669T1 - Verfahren zur bestimmung der zeit bis zum ausfall von submikrometer-metallverbindungen - Google Patents

Verfahren zur bestimmung der zeit bis zum ausfall von submikrometer-metallverbindungen

Info

Publication number
ATE476669T1
ATE476669T1 AT05745292T AT05745292T ATE476669T1 AT E476669 T1 ATE476669 T1 AT E476669T1 AT 05745292 T AT05745292 T AT 05745292T AT 05745292 T AT05745292 T AT 05745292T AT E476669 T1 ATE476669 T1 AT E476669T1
Authority
AT
Austria
Prior art keywords
failure
determining time
metal joints
combination
submicrometer
Prior art date
Application number
AT05745292T
Other languages
English (en)
Inventor
Ward Deceuninck
Original Assignee
Imec
Univ Hasselt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec, Univ Hasselt filed Critical Imec
Application granted granted Critical
Publication of ATE476669T1 publication Critical patent/ATE476669T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G01R31/2858—Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2868—Complete testing stations; systems; procedures; software aspects
    • G01R31/287—Procedures; Software aspects

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Carbon And Carbon Compounds (AREA)
AT05745292T 2004-05-11 2005-05-11 Verfahren zur bestimmung der zeit bis zum ausfall von submikrometer-metallverbindungen ATE476669T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04447117A EP1596210A1 (de) 2004-05-11 2004-05-11 Verfahren zur Lebensdauererfassung von Verbindungsstrukturen des Submikrometerbereichs
PCT/BE2005/000076 WO2005109018A1 (en) 2004-05-11 2005-05-11 Method for determining time to failure of submicron metal interconnects

Publications (1)

Publication Number Publication Date
ATE476669T1 true ATE476669T1 (de) 2010-08-15

Family

ID=34933034

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05745292T ATE476669T1 (de) 2004-05-11 2005-05-11 Verfahren zur bestimmung der zeit bis zum ausfall von submikrometer-metallverbindungen

Country Status (5)

Country Link
US (1) US8030099B2 (de)
EP (2) EP1596210A1 (de)
AT (1) ATE476669T1 (de)
DE (1) DE602005022722D1 (de)
WO (1) WO2005109018A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8543967B2 (en) 2012-02-24 2013-09-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Computer system and method for determining a temperature rise in direct current (DC) lines caused by joule heating of nearby alternating current (AC) lines
CN102955121B (zh) 2012-10-30 2014-11-19 工业和信息化部电子第五研究所 一种电迁移失效的剩余寿命预测方法和装置
US10732216B2 (en) 2012-10-30 2020-08-04 Fifth Electronics Research Institute Of Ministry Of Industry And Information Technology Method and device of remaining life prediction for electromigration failure
US10591531B2 (en) * 2015-06-10 2020-03-17 Qualcomm Incorporated Method and apparatus for integrated circuit monitoring and prevention of electromigration failure
US10634714B2 (en) * 2016-02-23 2020-04-28 Intel Corporation Apparatus and method for monitoring and predicting reliability of an integrated circuit
US10161994B2 (en) * 2016-06-14 2018-12-25 Formfactor Beaverton, Inc. Systems and methods for electrically testing electromigration in an electromigration test structure
CN106449460B (zh) * 2016-10-26 2019-09-17 上海华力微电子有限公司 恒温电迁移测试中的电流加速因子评估方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2176653B (en) * 1985-06-20 1988-06-15 Gen Electric Plc Method of manufacturing integrated circuits
NL8902891A (nl) * 1989-04-19 1990-11-16 Imec Inter Uni Micro Electr Werkwijze en inrichting voor het versneld bepalen van de veroudering van een of meer elementen met een electromagnetische verouderingsparameter.
DE4003682A1 (de) 1990-02-07 1991-08-08 Steinheil Optronik Gmbh Schneller digital-analogwandler mit hoher aufloesung
US5264377A (en) * 1990-03-21 1993-11-23 At&T Bell Laboratories Integrated circuit electromigration monitor
US5497076A (en) * 1993-10-25 1996-03-05 Lsi Logic Corporation Determination of failure criteria based upon grain boundary electromigration in metal alloy films
US6037795A (en) * 1997-09-26 2000-03-14 International Business Machines Corporation Multiple device test layout
JP3253901B2 (ja) * 1997-10-09 2002-02-04 株式会社東芝 デジタル／アナログ変換器
WO2001080305A2 (en) * 2000-04-17 2001-10-25 Board Of Regents, The University Of Texas System Electromigration early failure distribution in submicron interconnects
US6674377B1 (en) * 2002-04-25 2004-01-06 Rambus Inc. Circuit, apparatus and method for improved current distribution of output drivers enabling improved calibration efficiency and accuracy
US6664907B1 (en) * 2002-06-14 2003-12-16 Dell Products L.P. Information handling system with self-calibrating digital-to-analog converter
US6714037B1 (en) * 2002-06-25 2004-03-30 Advanced Micro Devices, Inc. Methodology for an assessment of the degree of barrier permeability at via bottom during electromigration using dissimilar barrier thickness
US6724214B2 (en) * 2002-09-13 2004-04-20 Chartered Semiconductor Manufacturing Ltd. Test structures for on-chip real-time reliability testing
US6770847B2 (en) * 2002-09-30 2004-08-03 Advanced Micro Devices, Inc. Method and system for Joule heating characterization
US6983223B2 (en) * 2003-04-29 2006-01-03 Watlow Electric Manufacturing Company Detecting thermocouple failure using loop resistance
JP4205629B2 (ja) * 2003-07-07 2009-01-07 セイコーエプソン株式会社 デジタル／アナログ変換回路、電気光学装置及び電子機器

Also Published As

Publication number Publication date
EP1771743B1 (de) 2010-08-04
WO2005109018A1 (en) 2005-11-17
DE602005022722D1 (de) 2010-09-16
US20080098270A1 (en) 2008-04-24
EP1596210A1 (de) 2005-11-16
EP1771743A1 (de) 2007-04-11
US8030099B2 (en) 2011-10-04

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