JP2005333148A5 - - Google Patents
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- Publication number
- JP2005333148A5 JP2005333148A5 JP2005170117A JP2005170117A JP2005333148A5 JP 2005333148 A5 JP2005333148 A5 JP 2005333148A5 JP 2005170117 A JP2005170117 A JP 2005170117A JP 2005170117 A JP2005170117 A JP 2005170117A JP 2005333148 A5 JP2005333148 A5 JP 2005333148A5
- Authority
- JP
- Japan
- Prior art keywords
- work function
- semiconductor wafer
- conductive
- coating
- electrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 24
- 239000000463 material Substances 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 10
- 239000011248 coating agent Substances 0.000 claims 9
- 238000000576 coating method Methods 0.000 claims 9
- 230000000638 stimulation Effects 0.000 claims 4
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 3
- 229910052741 iridium Inorganic materials 0.000 claims 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 239000000523 sample Substances 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/845,815 US7023231B2 (en) | 2004-05-14 | 2004-05-14 | Work function controlled probe for measuring properties of a semiconductor wafer and method of use thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005333148A JP2005333148A (ja) | 2005-12-02 |
| JP2005333148A5 true JP2005333148A5 (OSRAM) | 2008-06-26 |
Family
ID=34939824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005170117A Pending JP2005333148A (ja) | 2004-05-14 | 2005-05-13 | 半導体ウエハの特性を測定するための仕事関数が制御されたプローブとその使用方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7023231B2 (OSRAM) |
| EP (1) | EP1596212B1 (OSRAM) |
| JP (1) | JP2005333148A (OSRAM) |
| AT (1) | ATE408154T1 (OSRAM) |
| DE (1) | DE602005009603D1 (OSRAM) |
| TW (1) | TWI391686B (OSRAM) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6380751B2 (en) | 1992-06-11 | 2002-04-30 | Cascade Microtech, Inc. | Wafer probe station having environment control enclosure |
| US5345170A (en) | 1992-06-11 | 1994-09-06 | Cascade Microtech, Inc. | Wafer probe station having integrated guarding, Kelvin connection and shielding systems |
| US6232789B1 (en) | 1997-05-28 | 2001-05-15 | Cascade Microtech, Inc. | Probe holder for low current measurements |
| US5561377A (en) | 1995-04-14 | 1996-10-01 | Cascade Microtech, Inc. | System for evaluating probing networks |
| US5729150A (en) * | 1995-12-01 | 1998-03-17 | Cascade Microtech, Inc. | Low-current probe card with reduced triboelectric current generating cables |
| US5914613A (en) * | 1996-08-08 | 1999-06-22 | Cascade Microtech, Inc. | Membrane probing system with local contact scrub |
| US6002263A (en) | 1997-06-06 | 1999-12-14 | Cascade Microtech, Inc. | Probe station having inner and outer shielding |
| US6034533A (en) * | 1997-06-10 | 2000-03-07 | Tervo; Paul A. | Low-current pogo probe card |
| US6256882B1 (en) | 1998-07-14 | 2001-07-10 | Cascade Microtech, Inc. | Membrane probing system |
| US6578264B1 (en) * | 1999-06-04 | 2003-06-17 | Cascade Microtech, Inc. | Method for constructing a membrane probe using a depression |
| US6445202B1 (en) | 1999-06-30 | 2002-09-03 | Cascade Microtech, Inc. | Probe station thermal chuck with shielding for capacitive current |
| US6838890B2 (en) * | 2000-02-25 | 2005-01-04 | Cascade Microtech, Inc. | Membrane probing system |
| US6914423B2 (en) | 2000-09-05 | 2005-07-05 | Cascade Microtech, Inc. | Probe station |
| US6965226B2 (en) | 2000-09-05 | 2005-11-15 | Cascade Microtech, Inc. | Chuck for holding a device under test |
| DE20114544U1 (de) | 2000-12-04 | 2002-02-21 | Cascade Microtech, Inc., Beaverton, Oreg. | Wafersonde |
| AU2002327490A1 (en) | 2001-08-21 | 2003-06-30 | Cascade Microtech, Inc. | Membrane probing system |
| EP1432546A4 (en) | 2001-08-31 | 2006-06-07 | Cascade Microtech Inc | OPTICAL TESTING APPARATUS |
| US6777964B2 (en) | 2002-01-25 | 2004-08-17 | Cascade Microtech, Inc. | Probe station |
| US6951846B2 (en) * | 2002-03-07 | 2005-10-04 | The United States Of America As Represented By The Secretary Of The Army | Artemisinins with improved stability and bioavailability for therapeutic drug development and application |
| KR100864916B1 (ko) | 2002-05-23 | 2008-10-22 | 캐스케이드 마이크로테크 인코포레이티드 | 피시험 디바이스를 테스트하기 위한 프로브 |
| US6847219B1 (en) | 2002-11-08 | 2005-01-25 | Cascade Microtech, Inc. | Probe station with low noise characteristics |
| US6724205B1 (en) | 2002-11-13 | 2004-04-20 | Cascade Microtech, Inc. | Probe for combined signals |
| US7250779B2 (en) | 2002-11-25 | 2007-07-31 | Cascade Microtech, Inc. | Probe station with low inductance path |
| US6861856B2 (en) | 2002-12-13 | 2005-03-01 | Cascade Microtech, Inc. | Guarded tub enclosure |
| US7221172B2 (en) | 2003-05-06 | 2007-05-22 | Cascade Microtech, Inc. | Switched suspended conductor and connection |
| US7057404B2 (en) | 2003-05-23 | 2006-06-06 | Sharp Laboratories Of America, Inc. | Shielded probe for testing a device under test |
| US7492172B2 (en) | 2003-05-23 | 2009-02-17 | Cascade Microtech, Inc. | Chuck for holding a device under test |
| US7250626B2 (en) | 2003-10-22 | 2007-07-31 | Cascade Microtech, Inc. | Probe testing structure |
| US7321234B2 (en) * | 2003-12-18 | 2008-01-22 | Lecroy Corporation | Resistive test probe tips and applications therefor |
| JP2007517231A (ja) | 2003-12-24 | 2007-06-28 | カスケード マイクロテック インコーポレイテッド | アクティブ・ウェハプローブ |
| US7187188B2 (en) | 2003-12-24 | 2007-03-06 | Cascade Microtech, Inc. | Chuck with integrated wafer support |
| DE202005021434U1 (de) | 2004-06-07 | 2008-03-20 | Cascade Microtech, Inc., Beaverton | Thermooptische Einspannvorrichtung |
| US7330041B2 (en) | 2004-06-14 | 2008-02-12 | Cascade Microtech, Inc. | Localizing a temperature of a device for testing |
| KR101157449B1 (ko) | 2004-07-07 | 2012-06-22 | 캐스케이드 마이크로테크 인코포레이티드 | 멤브레인 서스펜디드 프로브를 구비한 프로브 헤드 |
| DE202005021435U1 (de) | 2004-09-13 | 2008-02-28 | Cascade Microtech, Inc., Beaverton | Doppelseitige Prüfaufbauten |
| US7656172B2 (en) | 2005-01-31 | 2010-02-02 | Cascade Microtech, Inc. | System for testing semiconductors |
| US7535247B2 (en) | 2005-01-31 | 2009-05-19 | Cascade Microtech, Inc. | Interface for testing semiconductors |
| US7282941B2 (en) * | 2005-04-05 | 2007-10-16 | Solid State Measurements, Inc. | Method of measuring semiconductor wafers with an oxide enhanced probe |
| US7449899B2 (en) | 2005-06-08 | 2008-11-11 | Cascade Microtech, Inc. | Probe for high frequency signals |
| US20070294047A1 (en) * | 2005-06-11 | 2007-12-20 | Leonard Hayden | Calibration system |
| JP5080459B2 (ja) | 2005-06-13 | 2012-11-21 | カスケード マイクロテック インコーポレイテッド | 広帯域能動/受動差動信号プローブ |
| US7637009B2 (en) * | 2006-02-27 | 2009-12-29 | Sv Probe Pte. Ltd. | Approach for fabricating probe elements for probe card assemblies using a reusable substrate |
| DE202007018733U1 (de) | 2006-06-09 | 2009-03-26 | Cascade Microtech, Inc., Beaverton | Messfühler für differentielle Signale mit integrierter Symmetrieschaltung |
| US7723999B2 (en) | 2006-06-12 | 2010-05-25 | Cascade Microtech, Inc. | Calibration structures for differential signal probing |
| US7764072B2 (en) | 2006-06-12 | 2010-07-27 | Cascade Microtech, Inc. | Differential signal probing system |
| US7443186B2 (en) | 2006-06-12 | 2008-10-28 | Cascade Microtech, Inc. | On-wafer test structures for differential signals |
| US7403028B2 (en) | 2006-06-12 | 2008-07-22 | Cascade Microtech, Inc. | Test structure and probe for differential signals |
| US20080290889A1 (en) * | 2007-05-24 | 2008-11-27 | Solid State Measurements, Inc. | Method of destructive testing the dielectric layer of a semiconductor wafer or sample |
| US7876114B2 (en) | 2007-08-08 | 2011-01-25 | Cascade Microtech, Inc. | Differential waveguide probe |
| JP5053788B2 (ja) * | 2007-10-10 | 2012-10-17 | 株式会社アルバック | 導電性プローブ、導電性プローブの製造方法、及び磁気特性測定方法 |
| US7888957B2 (en) | 2008-10-06 | 2011-02-15 | Cascade Microtech, Inc. | Probing apparatus with impedance optimized interface |
| US8410806B2 (en) | 2008-11-21 | 2013-04-02 | Cascade Microtech, Inc. | Replaceable coupon for a probing apparatus |
| US8319503B2 (en) | 2008-11-24 | 2012-11-27 | Cascade Microtech, Inc. | Test apparatus for measuring a characteristic of a device under test |
| DE102012205352B4 (de) * | 2012-02-24 | 2022-12-08 | Rohde & Schwarz GmbH & Co. Kommanditgesellschaft | Adapter für einen Tastkopf zur Messung eines differenziellen Signals |
| JP6301680B2 (ja) * | 2014-02-25 | 2018-03-28 | エイブリック株式会社 | 弾性プローブ |
| US20200233033A1 (en) * | 2019-01-17 | 2020-07-23 | Intel Corporation | Test probe for wafer-level and panel-level testing |
| WO2020158575A1 (ja) | 2019-01-29 | 2020-08-06 | 株式会社ヨコオ | プランジャーおよびコンタクトプローブ |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4463060A (en) * | 1983-11-15 | 1984-07-31 | E. I. Du Pont De Nemours And Company | Solderable palladium-nickel coatings and method of making said coatings |
| US5378971A (en) * | 1990-11-30 | 1995-01-03 | Tokyo Electron Limited | Probe and a method of manufacturing the same |
| JP2917674B2 (ja) * | 1992-06-03 | 1999-07-12 | 松下電器産業株式会社 | 走査トンネル顕微鏡用探針およびその製造方法 |
| JP2900764B2 (ja) * | 1993-08-30 | 1999-06-02 | 住友金属工業株式会社 | 半導体表面薄膜の評価方法 |
| US5500607A (en) * | 1993-12-22 | 1996-03-19 | International Business Machines Corporation | Probe-oxide-semiconductor method and apparatus for measuring oxide charge on a semiconductor wafer |
| JPH10185878A (ja) * | 1996-12-26 | 1998-07-14 | Mitsubishi Electric Corp | 絶縁破壊測定方法 |
| US5796121A (en) * | 1997-03-25 | 1998-08-18 | International Business Machines Corporation | Thin film transistors fabricated on plastic substrates |
| US6139759A (en) * | 1997-07-08 | 2000-10-31 | International Business Machines Corporation | Method of manufacturing silicided silicon microtips for scanning probe microscopy |
| JP3280327B2 (ja) * | 1997-10-02 | 2002-05-13 | インターナショナル・ビジネス・マシーンズ・コーポレーション | テスト・プローブ構造体及びその製造方法 |
| US6181144B1 (en) * | 1998-02-25 | 2001-01-30 | Micron Technology, Inc. | Semiconductor probe card having resistance measuring circuitry and method fabrication |
| JP4102068B2 (ja) * | 1999-10-19 | 2008-06-18 | ソリッド・ステート・メジャメンツ・インコーポレイテッド | 測定装置及び電気特性測定方法 |
| US6741093B2 (en) * | 2000-10-19 | 2004-05-25 | Solid State Measurements, Inc. | Method of determining one or more properties of a semiconductor wafer |
| JP2002131334A (ja) * | 2000-10-24 | 2002-05-09 | Nec Yamaguchi Ltd | プローブ針、プローブカード、及びプローブカードの作製方法 |
| CN1643741A (zh) * | 2002-03-18 | 2005-07-20 | 纳米纳克斯公司 | 一种微型接触弹簧 |
| US6842029B2 (en) * | 2002-04-11 | 2005-01-11 | Solid State Measurements, Inc. | Non-invasive electrical measurement of semiconductor wafers |
| US6632691B1 (en) * | 2002-04-11 | 2003-10-14 | Solid State Measurements, Inc. | Apparatus and method for determining doping concentration of a semiconductor wafer |
| US6894519B2 (en) * | 2002-04-11 | 2005-05-17 | Solid State Measurements, Inc. | Apparatus and method for determining electrical properties of a semiconductor wafer |
| US6612161B1 (en) * | 2002-07-23 | 2003-09-02 | Fidelica Microsystems, Inc. | Atomic force microscopy measurements of contact resistance and current-dependent stiction |
| US6836139B2 (en) * | 2002-10-22 | 2004-12-28 | Solid State Measurments, Inc. | Method and apparatus for determining defect and impurity concentration in semiconducting material of a semiconductor wafer |
| US6879176B1 (en) * | 2003-11-04 | 2005-04-12 | Solid State Measurements, Inc. | Conductance-voltage (GV) based method for determining leakage current in dielectrics |
-
2004
- 2004-05-14 US US10/845,815 patent/US7023231B2/en not_active Expired - Fee Related
-
2005
- 2005-05-11 TW TW094115310A patent/TWI391686B/zh not_active IP Right Cessation
- 2005-05-13 AT AT05104011T patent/ATE408154T1/de not_active IP Right Cessation
- 2005-05-13 EP EP05104011A patent/EP1596212B1/en not_active Expired - Lifetime
- 2005-05-13 DE DE602005009603T patent/DE602005009603D1/de not_active Expired - Fee Related
- 2005-05-13 JP JP2005170117A patent/JP2005333148A/ja active Pending
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