JP2005317127A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP2005317127A
JP2005317127A JP2004134486A JP2004134486A JP2005317127A JP 2005317127 A JP2005317127 A JP 2005317127A JP 2004134486 A JP2004134486 A JP 2004134486A JP 2004134486 A JP2004134486 A JP 2004134486A JP 2005317127 A JP2005317127 A JP 2005317127A
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JP
Japan
Prior art keywords
command
semiconductor memory
memory device
input
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004134486A
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English (en)
Japanese (ja)
Other versions
JP2005317127A5 (enExample
Inventor
Manabu Komiya
学 小宮
Hitoshi Suwa
仁史 諏訪
Yasuhiro Tomita
泰弘 冨田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2004134486A priority Critical patent/JP2005317127A/ja
Priority to US11/113,046 priority patent/US7310277B2/en
Priority to CNB2005100685137A priority patent/CN100468574C/zh
Publication of JP2005317127A publication Critical patent/JP2005317127A/ja
Publication of JP2005317127A5 publication Critical patent/JP2005317127A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells

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  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
JP2004134486A 2004-04-28 2004-04-28 不揮発性半導体記憶装置 Pending JP2005317127A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004134486A JP2005317127A (ja) 2004-04-28 2004-04-28 不揮発性半導体記憶装置
US11/113,046 US7310277B2 (en) 2004-04-28 2005-04-25 Non-volatile semiconductor storage device with specific command enable/disable control signal
CNB2005100685137A CN100468574C (zh) 2004-04-28 2005-04-28 非易失性半导体存储器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004134486A JP2005317127A (ja) 2004-04-28 2004-04-28 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2005317127A true JP2005317127A (ja) 2005-11-10
JP2005317127A5 JP2005317127A5 (enExample) 2007-03-22

Family

ID=35186911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004134486A Pending JP2005317127A (ja) 2004-04-28 2004-04-28 不揮発性半導体記憶装置

Country Status (3)

Country Link
US (1) US7310277B2 (enExample)
JP (1) JP2005317127A (enExample)
CN (1) CN100468574C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7937629B2 (en) 2006-04-06 2011-05-03 Hynix Semiconductor Inc. Semiconductor memory apparatus having noise generating block and method of testing the same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103677748A (zh) * 2012-09-26 2014-03-26 北京兆易创新科技股份有限公司 非易失性存储器指令处理的装置及方法
CN104657684B (zh) * 2014-08-27 2018-01-30 北京中电华大电子设计有限责任公司 增强智能卡可靠性的方法
JP2017045415A (ja) 2015-08-28 2017-03-02 株式会社東芝 メモリシステム
JP2018014050A (ja) 2016-07-22 2018-01-25 東芝メモリ株式会社 メモリシステム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5361341A (en) 1987-10-02 1994-11-01 Sgs-Thomson Microelectronics, S.A. Device for enabling the use of the contents of memory areas of an electronic microprocessor system
JPH07182885A (ja) 1993-02-05 1995-07-21 Toshiba Corp 半導体記憶装置
US6260172B1 (en) 1997-09-05 2001-07-10 Nippon Steel Corporation Semiconductor device with logic rewriting and security protection function
JPH11110293A (ja) * 1997-09-29 1999-04-23 Mitsubishi Electric Corp 不揮発性メモリ制御回路
JP3625377B2 (ja) * 1998-05-25 2005-03-02 ローム株式会社 半導体発光素子
JP4079552B2 (ja) * 1999-07-16 2008-04-23 富士通株式会社 不正コピーを防止した不揮発性半導体メモリ
JP2002074996A (ja) * 2000-08-25 2002-03-15 Mitsubishi Electric Corp 半導体集積回路
JP2002288988A (ja) * 2001-03-28 2002-10-04 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP3961806B2 (ja) * 2001-10-18 2007-08-22 富士通株式会社 不揮発性半導体記憶装置
US6996692B2 (en) * 2002-04-17 2006-02-07 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device and method for providing security for the same
JP4327626B2 (ja) * 2004-03-12 2009-09-09 株式会社東芝 不揮発性半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7937629B2 (en) 2006-04-06 2011-05-03 Hynix Semiconductor Inc. Semiconductor memory apparatus having noise generating block and method of testing the same

Also Published As

Publication number Publication date
CN1691206A (zh) 2005-11-02
US20050243616A1 (en) 2005-11-03
US7310277B2 (en) 2007-12-18
CN100468574C (zh) 2009-03-11

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