JP2005294718A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2005294718A JP2005294718A JP2004110799A JP2004110799A JP2005294718A JP 2005294718 A JP2005294718 A JP 2005294718A JP 2004110799 A JP2004110799 A JP 2004110799A JP 2004110799 A JP2004110799 A JP 2004110799A JP 2005294718 A JP2005294718 A JP 2005294718A
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Abstract
【解決手段】本発明の半導体装置は、電極パッド2の直下に絶縁層4を介して形成された配線層15の断面形状が台形であることを特徴とする。この形状にすることで、電極パッド2にAuワイヤーを接続する工程あるいはAuバンプを形成する工程において、配線層15の角部に生じる外部応力及び熱応力を緩和できる。電極パッド2下に絶縁層4を介して、底辺側内角が略45度である台形にすることが好ましい。
【選択図】図1
Description
2 電極パッド
3 半導体基板
4 絶縁層
6 保護膜
7 レジスト
15 配線層
25 配線層
Claims (6)
- 半導体素子の表面に複数配置された外部接続用電極の下部に絶縁層を介して形成された少なくとも1層以上の配線層の断面形状が台形であることを特徴とする半導体装置。
- 前記台形の底辺側内角が45度であることを特徴とする請求項1記載の半導体装置。
- 前記台形の底辺側内角が135度であることを特徴とする請求項1記載の半導体装置。
- 前記外部接続用電極の下部における配線層の断面のエッジが前記外部接続用電極の周縁下に存在し、前記配線層が複数重なっていることを特徴とする請求項1乃至3のいずれかに記載の半導体装置。
- 半導体素子の表面に複数配置された外部接続用電極の下部に絶縁層を介して形成された少なくとも1層以上の配線層形成に際し、レジストによりマスクされた前記配線層のエッチングをエッチングガスの混合比を変えながら行うことによって、前記配線層の側面にテーパーをつけることを特徴とする半導体装置の製造方法。
- 半導体素子の表面に複数配置された外部接続用電極の下部に絶縁層を介して形成された少なくとも1層以上の配線層形成に際し、レジストによりマスクされた前記絶縁層のエッチングをエッチングガスの混合比を変えながら行うことによって、底部にテーパーを持つ凹部が形成された前記絶縁層を得た後、前記凹部に配線層を埋めて形成し、前記配線層の側面にテーパーをつけることを特徴とする半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2004110799A JP4311260B2 (ja) | 2004-04-05 | 2004-04-05 | 半導体装置およびその製造方法 |
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JP2004110799A JP4311260B2 (ja) | 2004-04-05 | 2004-04-05 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005294718A true JP2005294718A (ja) | 2005-10-20 |
JP4311260B2 JP4311260B2 (ja) | 2009-08-12 |
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JP2004110799A Expired - Fee Related JP4311260B2 (ja) | 2004-04-05 | 2004-04-05 | 半導体装置およびその製造方法 |
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