JP2005243736A5 - - Google Patents

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Publication number
JP2005243736A5
JP2005243736A5 JP2004048507A JP2004048507A JP2005243736A5 JP 2005243736 A5 JP2005243736 A5 JP 2005243736A5 JP 2004048507 A JP2004048507 A JP 2004048507A JP 2004048507 A JP2004048507 A JP 2004048507A JP 2005243736 A5 JP2005243736 A5 JP 2005243736A5
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JP
Japan
Prior art keywords
processing
processing chamber
temperature
substrate
gas supply
Prior art date
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Application number
JP2004048507A
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English (en)
Japanese (ja)
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JP4610908B2 (ja
JP2005243736A (ja
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Application filed filed Critical
Priority to JP2004048507A priority Critical patent/JP4610908B2/ja
Priority claimed from JP2004048507A external-priority patent/JP4610908B2/ja
Publication of JP2005243736A publication Critical patent/JP2005243736A/ja
Publication of JP2005243736A5 publication Critical patent/JP2005243736A5/ja
Application granted granted Critical
Publication of JP4610908B2 publication Critical patent/JP4610908B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2004048507A 2004-02-24 2004-02-24 基板処理装置及び半導体装置の製造方法 Expired - Lifetime JP4610908B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004048507A JP4610908B2 (ja) 2004-02-24 2004-02-24 基板処理装置及び半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004048507A JP4610908B2 (ja) 2004-02-24 2004-02-24 基板処理装置及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2005243736A JP2005243736A (ja) 2005-09-08
JP2005243736A5 true JP2005243736A5 (enExample) 2007-04-05
JP4610908B2 JP4610908B2 (ja) 2011-01-12

Family

ID=35025177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004048507A Expired - Lifetime JP4610908B2 (ja) 2004-02-24 2004-02-24 基板処理装置及び半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP4610908B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007105431A1 (ja) * 2006-03-07 2007-09-20 Hitachi Kokusai Electric Inc. 基板処理装置および基板処理方法
JP5101243B2 (ja) * 2007-10-29 2012-12-19 東京エレクトロン株式会社 基板処理装置，基板処理装置の制御方法，およびプログラム
JP5060324B2 (ja) 2008-01-31 2012-10-31 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び処理容器
CN117672925B (zh) * 2023-12-22 2025-09-09 粤芯半导体技术股份有限公司 一种减少炉管内颗粒的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3184000B2 (ja) * 1993-05-10 2001-07-09 株式会社東芝 薄膜の形成方法およびその装置
JP4553227B2 (ja) * 2000-02-18 2010-09-29 東京エレクトロン株式会社 熱処理方法
JP4546623B2 (ja) * 2000-07-25 2010-09-15 東京エレクトロン株式会社 熱処理装置の制御条件決定方法
JP4514915B2 (ja) * 2000-07-25 2010-07-28 東京エレクトロン株式会社 熱処理装置、基板の熱処理方法、および処理レシピを記録した媒体

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