JP2005243736A5 - - Google Patents

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Publication number
JP2005243736A5
JP2005243736A5 JP2004048507A JP2004048507A JP2005243736A5 JP 2005243736 A5 JP2005243736 A5 JP 2005243736A5 JP 2004048507 A JP2004048507 A JP 2004048507A JP 2004048507 A JP2004048507 A JP 2004048507A JP 2005243736 A5 JP2005243736 A5 JP 2005243736A5
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JP
Japan
Prior art keywords
processing
processing chamber
temperature
substrate
gas supply
Prior art date
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Application number
JP2004048507A
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Japanese (ja)
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JP4610908B2 (en
JP2005243736A (en
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Publication date
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Priority to JP2004048507A priority Critical patent/JP4610908B2/en
Priority claimed from JP2004048507A external-priority patent/JP4610908B2/en
Publication of JP2005243736A publication Critical patent/JP2005243736A/en
Publication of JP2005243736A5 publication Critical patent/JP2005243736A5/ja
Application granted granted Critical
Publication of JP4610908B2 publication Critical patent/JP4610908B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Claims (2)

基板を処理する処理室と、
前記処理室を加熱する加熱手段と、
前記処理室内に処理ガスを供給する処理ガス供給手段と、
前記処理室を排気する排気手段と、
前記加熱手段を予め設定された設定温度に基づき制御する加熱制御手段と、
前記処理ガス供給手段を制御して前記処理室内に前記処理ガスを供給することで前記基板の処理を開始する処理ガス供給制御手段とを備え、
前記設定温度は、少なくとも前記処理ガス供給制御手段が前記処理室内に前記処理ガスを供給する前に、前記処理室内の温度降下させるように設定されていることを特徴とする基板処理装置。
A processing chamber for processing the substrate;
Heating means for heating the processing chamber;
A processing gas supply means for supplying a processing gas into the processing chamber;
Exhaust means for exhausting the processing chamber;
Heating control means for controlling the heating means based on a preset temperature, and
Processing gas supply control means for controlling the processing gas supply means to start processing of the substrate by supplying the processing gas into the processing chamber;
The set temperature, before at least the process gas supply control means supplies the processing gas into the processing chamber, pre Symbol substrate processing apparatus characterized by being configured to make lower the temperature in the room.
基板を処理室内に搬入する工程と、Carrying a substrate into the processing chamber;
前記処理室内の温度を所定の温度まで昇温する工程と、Raising the temperature in the processing chamber to a predetermined temperature;
前記処理室内の温度を降下させる工程と、Lowering the temperature in the processing chamber;
前記処理室内の温度を降下させる工程に引続き、前記処理室内に処理ガスを導入して前記基板を処理する工程と、Following the step of lowering the temperature in the processing chamber, the step of processing the substrate by introducing a processing gas into the processing chamber;
を有することを特徴とする半導体装置の製造方法。A method for manufacturing a semiconductor device, comprising:
JP2004048507A 2004-02-24 2004-02-24 Substrate processing apparatus and semiconductor device manufacturing method Expired - Lifetime JP4610908B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004048507A JP4610908B2 (en) 2004-02-24 2004-02-24 Substrate processing apparatus and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004048507A JP4610908B2 (en) 2004-02-24 2004-02-24 Substrate processing apparatus and semiconductor device manufacturing method

Publications (3)

Publication Number Publication Date
JP2005243736A JP2005243736A (en) 2005-09-08
JP2005243736A5 true JP2005243736A5 (en) 2007-04-05
JP4610908B2 JP4610908B2 (en) 2011-01-12

Family

ID=35025177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004048507A Expired - Lifetime JP4610908B2 (en) 2004-02-24 2004-02-24 Substrate processing apparatus and semiconductor device manufacturing method

Country Status (1)

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JP (1) JP4610908B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101003446B1 (en) * 2006-03-07 2010-12-28 가부시키가이샤 히다치 고쿠사이 덴키 Substrate processing apparatus and substrate processing method
JP5101243B2 (en) * 2007-10-29 2012-12-19 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing apparatus control method, and program
JP5060324B2 (en) 2008-01-31 2012-10-31 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, and processing container

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3184000B2 (en) * 1993-05-10 2001-07-09 株式会社東芝 Method and apparatus for forming thin film
JP4553227B2 (en) * 2000-02-18 2010-09-29 東京エレクトロン株式会社 Heat treatment method
JP4546623B2 (en) * 2000-07-25 2010-09-15 東京エレクトロン株式会社 Method for determining control conditions for heat treatment equipment
JP4514915B2 (en) * 2000-07-25 2010-07-28 東京エレクトロン株式会社 Heat treatment apparatus, substrate heat treatment method, and medium on which treatment recipe is recorded

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