JP4610908B2 - 基板処理装置及び半導体装置の製造方法 - Google Patents

基板処理装置及び半導体装置の製造方法 Download PDF

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Publication number
JP4610908B2
JP4610908B2 JP2004048507A JP2004048507A JP4610908B2 JP 4610908 B2 JP4610908 B2 JP 4610908B2 JP 2004048507 A JP2004048507 A JP 2004048507A JP 2004048507 A JP2004048507 A JP 2004048507A JP 4610908 B2 JP4610908 B2 JP 4610908B2
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temperature
substrate
processing
processing chamber
wafer
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JP2005243736A5 (enExample
JP2005243736A (ja
Inventor
建夫 花島
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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JP2004048507A 2004-02-24 2004-02-24 基板処理装置及び半導体装置の製造方法 Expired - Lifetime JP4610908B2 (ja)

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JP2004048507A JP4610908B2 (ja) 2004-02-24 2004-02-24 基板処理装置及び半導体装置の製造方法

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JP2004048507A JP4610908B2 (ja) 2004-02-24 2004-02-24 基板処理装置及び半導体装置の製造方法

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JP2005243736A JP2005243736A (ja) 2005-09-08
JP2005243736A5 JP2005243736A5 (enExample) 2007-04-05
JP4610908B2 true JP4610908B2 (ja) 2011-01-12

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007105431A1 (ja) * 2006-03-07 2007-09-20 Hitachi Kokusai Electric Inc. 基板処理装置および基板処理方法
JP5101243B2 (ja) * 2007-10-29 2012-12-19 東京エレクトロン株式会社 基板処理装置，基板処理装置の制御方法，およびプログラム
JP5060324B2 (ja) 2008-01-31 2012-10-31 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び処理容器
CN117672925B (zh) * 2023-12-22 2025-09-09 粤芯半导体技术股份有限公司 一种减少炉管内颗粒的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3184000B2 (ja) * 1993-05-10 2001-07-09 株式会社東芝 薄膜の形成方法およびその装置
JP4553227B2 (ja) * 2000-02-18 2010-09-29 東京エレクトロン株式会社 熱処理方法
JP4546623B2 (ja) * 2000-07-25 2010-09-15 東京エレクトロン株式会社 熱処理装置の制御条件決定方法
JP4514915B2 (ja) * 2000-07-25 2010-07-28 東京エレクトロン株式会社 熱処理装置、基板の熱処理方法、および処理レシピを記録した媒体

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