JP2005236117A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2005236117A JP2005236117A JP2004044787A JP2004044787A JP2005236117A JP 2005236117 A JP2005236117 A JP 2005236117A JP 2004044787 A JP2004044787 A JP 2004044787A JP 2004044787 A JP2004044787 A JP 2004044787A JP 2005236117 A JP2005236117 A JP 2005236117A
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- semiconductor chip
- circuit element
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- semiconductor
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Abstract
【解決手段】半導体装置の製造方法は、半導体ウェハの主表面に、スクライブラインL1により区画される複数の半導体チップ領域20aを含む半導体チップ形成領域及び半導体チップ形成領域を囲む周辺領域を設定する工程と、複数の半導体チップ領域内それぞれに、回路素子及び回路素子に接続される複数の回路素子接続用パッド18を形成する工程と、複数の回路素子接続用パッドそれぞれの一部分を露出させる絶縁膜を、主表面上に形成する工程と、半導体チップ形成領域において、所定の間隔で配置される複数の突起電極28を、各半導体チップ領域上の絶縁膜上に形成する工程と、絶縁膜上に、突起電極の頂面を露出させる封止部を、形成する工程と、スクライブラインに沿って、半導体ウェハを切削する工程とを含む。
【選択図】図4
Description
図2〜図5を参照して、第1の実施の形態の製造方法につき説明する。
図6及び図7を参照して、この発明の第2の実施の形態の半導体装置の製造方法につき説明する。この実施の形態の製造方法により製造される半導体チップの構成については、第1の実施の形態の製造方法により製造される半導体チップと同様であるのでその詳細な説明は省略する。
12:半導体チップ形成領域
14:周辺領域
15:回路素子
15a:回路素子の表面(基板の主表面)
18:回路素子接続用パッド
20:半導体チップ
20a:半導体チップ領域
22:絶縁膜
24:配線
25:再配線層
26:突起電極用パッド
26a:内部ダミー突起電極用パッド
26b:外部ダミー突起電極用パッド
28:突起電極
28a:内部ダミー突起電極
28b:外部ダミー突起電極
31:配線構造
32:外部端子
34:封止部
Claims (4)
- (a)半導体ウェハの主表面に、スクライブラインにより区画される複数の半導体チップ領域を含む半導体チップ形成領域及び該半導体チップ形成領域を囲む周辺領域を設定する工程と、
(b)前記複数の半導体チップ領域内それぞれに、回路素子及び該回路素子に接続される複数の回路素子接続用パッドを形成する工程と、
(c)前記複数の回路素子接続用パッドそれぞれの一部分を露出させる絶縁膜を、前記主表面上に形成する工程と、
(d)前記半導体チップ形成領域において、所定の間隔で配置される複数の突起電極を、前記各半導体チップ領域上の前記絶縁膜上に形成する工程と、
(e)前記絶縁膜上に、前記突起電極の頂面を露出させる封止部を、形成する工程と、
(f)前記スクライブラインに沿って、前記半導体ウェハを切削する工程と
を含むことを特徴とする半導体装置の製造方法。 - 前記(c)工程の後に、前記回路素子接続用パッドから前記突起電極へと延在する配線を形成する工程を、さらに含むことを特徴とする請求項1に記載の半導体装置の製造方法。
- (a)半導体ウェハの主表面に、スクライブラインにより区画される複数の半導体チップ領域を含む半導体チップ形成領域及び該半導体チップ形成領域を囲む周辺領域を設定する工程と、
(b)前記複数の半導体チップ領域内それぞれに、回路素子及び該回路素子に接続される複数の回路素子接続用パッドを形成する工程と、
(c)前記複数の回路素子接続用パッドそれぞれの一部分を露出させる絶縁膜を、前記主表面上に形成する工程と、
(d)前記半導体ウェハの主表面内において、所定の間隔で配置される複数の突起電極及び複数のダミー突起電極を、前記各半導体チップ領域上の前記絶縁膜上及び前記周辺領域上の前記絶縁膜上それぞれに形成する工程と、
(e)前記絶縁膜上に、前記突起電極の頂面を露出させる封止部を、形成する工程と、
(f)前記スクライブラインに沿って、前記半導体ウェハを切削する工程と
を含むことを特徴とする半導体装置の製造方法。 - 前記(c)工程の後に、前記回路素子接続用パッドから前記突起電極へと延在する配線を形成する工程を、さらに含むことを特徴とする請求項3に記載の半導体装置の製造方法。
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Cited By (3)
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JP2007288038A (ja) * | 2006-04-19 | 2007-11-01 | Casio Comput Co Ltd | 半導体装置 |
JP2014026042A (ja) * | 2012-07-25 | 2014-02-06 | Japan Display Inc | 表示装置 |
JP2017069580A (ja) * | 2016-12-28 | 2017-04-06 | ラピスセミコンダクタ株式会社 | 半導体装置 |
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TWI367566B (en) * | 2004-05-06 | 2012-07-01 | United Test And Assembly Ct | Structurally-enhanced integrated circuit package and method of manufacture |
US7342312B2 (en) | 2004-09-29 | 2008-03-11 | Rohm Co., Ltd. | Semiconductor device |
JP5501668B2 (ja) * | 2009-06-17 | 2014-05-28 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法、半導体チップ及び半導体ウェハ |
US8642385B2 (en) * | 2011-08-09 | 2014-02-04 | Alpha & Omega Semiconductor, Inc. | Wafer level package structure and the fabrication method thereof |
TWI473178B (zh) * | 2011-09-15 | 2015-02-11 | Alpha & Omega Semiconductor | 一種晶圓級的封裝結構及其製備方法 |
US11562952B2 (en) * | 2021-01-29 | 2023-01-24 | Cirrus Logic, Inc. | Chip scale package |
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JPH04373131A (ja) | 1991-06-22 | 1992-12-25 | Nec Corp | 高密度実装用icペレット |
JP2792532B2 (ja) * | 1994-09-30 | 1998-09-03 | 日本電気株式会社 | 半導体装置の製造方法及び半導体ウエハー |
JPH09139387A (ja) | 1995-11-13 | 1997-05-27 | Denso Corp | 半導体装置の電極形成方法 |
JP3120848B2 (ja) | 1999-03-17 | 2000-12-25 | カシオ計算機株式会社 | 半導体装置の製造方法 |
JP4526651B2 (ja) * | 1999-08-12 | 2010-08-18 | 富士通セミコンダクター株式会社 | 半導体装置 |
JP3971541B2 (ja) * | 1999-12-24 | 2007-09-05 | 富士通株式会社 | 半導体装置の製造方法及びこの方法に用いる分割金型 |
JP2003168700A (ja) | 2001-09-18 | 2003-06-13 | Seiko Epson Corp | 半導体ウエハ、半導体装置及びその製造方法、回路基板並びに電子機器 |
JP2003100801A (ja) * | 2001-09-25 | 2003-04-04 | Mitsubishi Electric Corp | 半導体装置 |
US6664630B2 (en) * | 2001-10-16 | 2003-12-16 | Hitachi Maxell, Ltd. | Semiconductor device |
TW577160B (en) * | 2002-02-04 | 2004-02-21 | Casio Computer Co Ltd | Semiconductor device and manufacturing method thereof |
JP3617647B2 (ja) * | 2002-11-08 | 2005-02-09 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
JP4056360B2 (ja) * | 2002-11-08 | 2008-03-05 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
JP4093018B2 (ja) * | 2002-11-08 | 2008-05-28 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
JP3808030B2 (ja) * | 2002-11-28 | 2006-08-09 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
JP3983205B2 (ja) * | 2003-07-08 | 2007-09-26 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
JP3904541B2 (ja) * | 2003-09-26 | 2007-04-11 | 沖電気工業株式会社 | 半導体装置内蔵基板の製造方法 |
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Cited By (3)
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JP2007288038A (ja) * | 2006-04-19 | 2007-11-01 | Casio Comput Co Ltd | 半導体装置 |
JP2014026042A (ja) * | 2012-07-25 | 2014-02-06 | Japan Display Inc | 表示装置 |
JP2017069580A (ja) * | 2016-12-28 | 2017-04-06 | ラピスセミコンダクタ株式会社 | 半導体装置 |
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