JP2005217061A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2005217061A
JP2005217061A JP2004020360A JP2004020360A JP2005217061A JP 2005217061 A JP2005217061 A JP 2005217061A JP 2004020360 A JP2004020360 A JP 2004020360A JP 2004020360 A JP2004020360 A JP 2004020360A JP 2005217061 A JP2005217061 A JP 2005217061A
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Japan
Prior art keywords
mos transistor
threshold mos
region
impurity layer
conductivity type
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JP2004020360A
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Japanese (ja)
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JP2005217061A5 (https=
Inventor
Mitsuhiko Iketani
光彦 池谷
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2004020360A priority Critical patent/JP2005217061A/ja
Publication of JP2005217061A publication Critical patent/JP2005217061A/ja
Publication of JP2005217061A5 publication Critical patent/JP2005217061A5/ja
Pending legal-status Critical Current

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2004020360A 2004-01-28 2004-01-28 半導体装置およびその製造方法 Pending JP2005217061A (ja)

Priority Applications (1)

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JP2004020360A JP2005217061A (ja) 2004-01-28 2004-01-28 半導体装置およびその製造方法

Applications Claiming Priority (1)

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JP2004020360A JP2005217061A (ja) 2004-01-28 2004-01-28 半導体装置およびその製造方法

Publications (2)

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JP2005217061A true JP2005217061A (ja) 2005-08-11
JP2005217061A5 JP2005217061A5 (https=) 2006-08-10

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JP2004020360A Pending JP2005217061A (ja) 2004-01-28 2004-01-28 半導体装置およびその製造方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100890613B1 (ko) * 2007-01-26 2009-03-27 삼성전자주식회사 마스크롬 소자 및 그 제조 방법
WO2010146727A1 (ja) * 2009-06-17 2010-12-23 パナソニック株式会社 半導体装置及びその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316341A (ja) * 1994-09-09 1996-11-29 Nippon Steel Corp 半導体記憶装置及びその製造方法
JP2001196475A (ja) * 2000-01-12 2001-07-19 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2002057226A (ja) * 2000-08-11 2002-02-22 Fuji Electric Co Ltd 半導体装置およびその製造方法
JP2003163220A (ja) * 2001-11-28 2003-06-06 Mitsubishi Electric Corp 半導体装置の製造方法
JP2004342682A (ja) * 2003-05-13 2004-12-02 Sharp Corp 半導体装置及びその製造方法、携帯電子機器、並びにｉｃカード

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316341A (ja) * 1994-09-09 1996-11-29 Nippon Steel Corp 半導体記憶装置及びその製造方法
JP2001196475A (ja) * 2000-01-12 2001-07-19 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2002057226A (ja) * 2000-08-11 2002-02-22 Fuji Electric Co Ltd 半導体装置およびその製造方法
JP2003163220A (ja) * 2001-11-28 2003-06-06 Mitsubishi Electric Corp 半導体装置の製造方法
JP2004342682A (ja) * 2003-05-13 2004-12-02 Sharp Corp 半導体装置及びその製造方法、携帯電子機器、並びにｉｃカード

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100890613B1 (ko) * 2007-01-26 2009-03-27 삼성전자주식회사 마스크롬 소자 및 그 제조 방법
WO2010146727A1 (ja) * 2009-06-17 2010-12-23 パナソニック株式会社 半導体装置及びその製造方法
JP2011003635A (ja) * 2009-06-17 2011-01-06 Panasonic Corp 半導体装置及びその製造方法

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