JP2005109490A - イメージセンサー及びその製造方法 - Google Patents
イメージセンサー及びその製造方法 Download PDFInfo
- Publication number
- JP2005109490A JP2005109490A JP2004280823A JP2004280823A JP2005109490A JP 2005109490 A JP2005109490 A JP 2005109490A JP 2004280823 A JP2004280823 A JP 2004280823A JP 2004280823 A JP2004280823 A JP 2004280823A JP 2005109490 A JP2005109490 A JP 2005109490A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- interlayer insulating
- film
- image sensor
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000011229 interlayer Substances 0.000 claims abstract description 122
- 239000010410 layer Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 27
- 230000008021 deposition Effects 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 13
- 238000005137 deposition process Methods 0.000 claims description 11
- 206010034972 Photosensitivity reaction Diseases 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 230000036211 photosensitivity Effects 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 206010034960 Photophobia Diseases 0.000 claims 2
- 208000013469 light sensitivity Diseases 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Optical Filters (AREA)
Abstract
【解決手段】このイメージセンサーは半導体基板に形成された少なくとも一つのフォトダイオードと、前記フォトダイオード上に形成され、下部から上部に行くほど下部より上部の層間絶縁膜の密度が低くなるように少なくとも2層で積層された多層の層間絶縁膜と、前記多層の層間絶縁膜上に順次に積層された遮光膜及び素子保護膜と、前記素子保護膜上に順次に積層されたカラーフィルターアレイ及び平坦化膜と、前記平坦化膜上の各カラーフィルターに対向する位置に配列されるマイクロレンズと、を含む。このようにマイクロレンズとカラーフィルターを通じて入射した光の屈折角を減らすことによって、フォトダイオードに到る垂直光伝達率を増大させフォトダイオードの集光効率を大きく向上させることができる。
【選択図】図2
Description
Claims (14)
- 半導体基板に形成された少なくとも一つのフォトダイオード;
前記フォトダイオード上に形成され、下部から上部に行くほど下部より上部の層間絶縁膜の密度が低くなるように少なくとも2層で積層された多層の層間絶縁膜;
前記多層の層間絶縁膜上に順次に積層された遮光膜及び素子保護膜;
前記素子保護膜上に順次に積層されたカラーフィルターアレイ及び平坦化膜;及び
前記平坦化膜上の各カラーフィルターに対向する位置に配列されるマイクロレンズ;を含むことを特徴とするイメージセンサー。 - 前記多層の層間絶縁膜は、その下部に光感度調節膜を更に含むことを特徴とする請求項1に記載のイメージセンサー。
- 前記光感度調節膜は、その下部にバッファー絶縁膜を更に含むことを特徴とする請求項1に記載のイメージセンサー。
- 前記多層の層間絶縁膜は、酸化物質で形成され、蒸着工程によってPE−CVD<HDP−CVD<LP−CVD<熱酸化工程の順序で酸化膜の密度が高くなり、蒸着温度が低くなることによって酸化膜の密度が低くなって、蒸着工程と蒸着温度を調節して下部より上部の層間絶縁膜の密度を下げることを特徴とする請求項1に記載のイメージセンサー。
- 前記多層の層間絶縁膜は、酸化物質で形成され、下部より上部の層間絶縁膜に添加する不純物の濃度を高めて密度を下げることを特徴とする請求項1に記載のイメージセンサー。
- 前記多層の層間絶縁膜は、蒸着工程と蒸着温度及び前記層間絶縁膜に添加する不純物の濃度を調節して、下部より上部の層間絶縁膜の密度を下げることを特徴とする請求項4または5に記載のイメージセンサー。
- 前記多層の層間絶縁膜、前記素子保護膜、前記平坦化膜は、垂直に形成された多層の配線を備えることを特徴とする請求項1に記載のイメージセンサー。
- 半導体基板に少なくとも一つのフォトダイオードを製造する段階;
前記フォトダイオード上に下部から上部に行くほど下部より上部の層間絶縁膜の密度が低くなるように、少なくとも2層で積層された多層の層間絶縁膜を形成する段階;
前記多層の層間絶縁膜上に順次に積層された遮光膜及び素子保護膜を形成する段階;
前記素子保護膜上に順次に積層されたカラーフィルターアレイ及び平坦化膜を形成する段階;及び
前記平坦化膜上に前記各カラーフィルターに対向する位置に配列されたマイクロレンズを形成する段階;を含むことを特徴とするイメージセンサーの製造方法。 - 前記多層の層間絶縁膜の下部に光感度調節膜を形成する段階を更に含むことを特徴とする請求項8に記載のイメージセンサーの製造方法。
- 前記光感度調節膜の下部にバッファー絶縁膜を形成する段階を更に含むことを特徴とする請求項8に記載のイメージセンサーの製造方法。
- 前記多層の層間絶縁膜は、酸化物質で形成され、蒸着工程によってPE−CVD<HDP−CVD<LP−CVD<熱酸化工程の順に酸化膜の密度が高くなり、蒸着温度が低くなることによって酸化膜の密度が低くなって、蒸着工程と蒸着温度を調節して下部より上部の層間絶縁膜の密度を下げることを特徴とする請求項8に記載のイメージセンサーの製造方法。
- 前記多層の層間絶縁膜は、酸化物質で形成され、下部より上部の層間絶縁膜に添加する不純物の濃度を高めて密度を下げることを特徴とする請求項8に記載のイメージセンサーの製造方法。
- 前記多層の層間絶縁膜は、蒸着工程と蒸着温度及び前記層間絶縁膜に添加する不純物の濃度を調節して下部より上部の層間絶縁膜の密度を下げることを特徴とする請求項11または12に記載のイメージセンサーの製造方法。
- 前記多層の層間絶縁膜、前記素子保護膜、前記平坦化膜を形成する段階で多層の配線を共に形成する段階をさらに含むことを特徴とする請求項8に記載のイメージセンサーの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030067561A KR100549589B1 (ko) | 2003-09-29 | 2003-09-29 | 이미지센서 및 그 제조 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005109490A true JP2005109490A (ja) | 2005-04-21 |
Family
ID=34374228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004280823A Pending JP2005109490A (ja) | 2003-09-29 | 2004-09-28 | イメージセンサー及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7365298B2 (ja) |
JP (1) | JP2005109490A (ja) |
KR (1) | KR100549589B1 (ja) |
CN (1) | CN100438051C (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101500344B1 (ko) * | 2008-08-26 | 2015-03-09 | 삼성전자 주식회사 | 이미지 센서 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100698091B1 (ko) * | 2005-06-27 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR100720468B1 (ko) | 2005-12-28 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR20070096115A (ko) * | 2005-12-29 | 2007-10-02 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 |
US7675080B2 (en) * | 2006-01-10 | 2010-03-09 | Aptina Imaging Corp. | Uniform color filter arrays in a moat |
JP4710693B2 (ja) * | 2006-04-03 | 2011-06-29 | 凸版印刷株式会社 | カラー撮像素子及びカラー撮像素子製造方法 |
US8071416B2 (en) * | 2006-08-17 | 2011-12-06 | Micron Technology, Inc. | Method of forming a uniform color filter array |
US7593248B2 (en) * | 2006-11-16 | 2009-09-22 | Aptina Imaging Corporation | Method, apparatus and system providing a one-time programmable memory device |
US7875840B2 (en) * | 2006-11-16 | 2011-01-25 | Aptina Imaging Corporation | Imager device with anti-fuse pixels and recessed color filter array |
US7999340B2 (en) * | 2007-03-07 | 2011-08-16 | Altasens, Inc. | Apparatus and method for forming optical black pixels with uniformly low dark current |
KR100922548B1 (ko) * | 2007-11-26 | 2009-10-21 | 주식회사 동부하이텍 | 씨모스 이미지 센서 및 제조 방법 |
US8610815B2 (en) * | 2009-01-12 | 2013-12-17 | Aptina Imaging Corporation | Imaging device having microlens array adhered to wafer-level lens |
US9142586B2 (en) | 2009-02-24 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for backside illuminated image sensor |
US8531565B2 (en) | 2009-02-24 | 2013-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Front side implanted guard ring structure for backside illuminated image sensor |
KR20110008762A (ko) * | 2009-07-21 | 2011-01-27 | 삼성전자주식회사 | 씨모스 이미지 센서의 단위 화소 및 이를 포함하는 씨모스 이미지 센서 |
CN103887316B (zh) * | 2012-12-21 | 2017-04-12 | 上海天马微电子有限公司 | 一种图像传感器 |
TWI502212B (zh) | 2013-01-11 | 2015-10-01 | Pixart Imaging Inc | 光學裝置、使用微透鏡之感光元件及其製作方法 |
CN103926629B (zh) * | 2013-01-11 | 2017-03-08 | 原相科技股份有限公司 | 光学装置、使用微透镜的感光元件及其制作方法 |
US11393866B2 (en) * | 2019-09-30 | 2022-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming an image sensor |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01269903A (ja) * | 1988-04-20 | 1989-10-27 | Nec Corp | 多層配線基板 |
JPH04257261A (ja) * | 1991-02-12 | 1992-09-11 | Sony Corp | 固体撮像装置 |
JPH04343470A (ja) * | 1991-05-21 | 1992-11-30 | Nec Corp | 固体撮像装置 |
JPH0595098A (ja) * | 1991-10-02 | 1993-04-16 | Olympus Optical Co Ltd | 固体撮像装置 |
JPH06125070A (ja) * | 1992-10-09 | 1994-05-06 | Mitsubishi Electric Corp | 固体撮像装置とその製造方法 |
JPH06310504A (ja) * | 1993-04-27 | 1994-11-04 | Nec Corp | 絶縁膜の構造とその製造方法 |
JPH1012854A (ja) * | 1996-06-27 | 1998-01-16 | Nec Corp | 固体撮像装置およびその製造方法 |
JPH11103036A (ja) * | 1997-09-29 | 1999-04-13 | Sony Corp | 固体撮像素子 |
JPH11274443A (ja) * | 1998-03-19 | 1999-10-08 | Canon Inc | 固体撮像装置及びその製造方法 |
JP2000228513A (ja) * | 1998-12-30 | 2000-08-15 | Hyundai Electronics Ind Co Ltd | カラ―イメ―ジセンサ及びその製造方法 |
JP2001085660A (ja) * | 1999-09-10 | 2001-03-30 | Toshiba Corp | 固体撮像装置及びその制御方法 |
JP2001156279A (ja) * | 1999-11-29 | 2001-06-08 | Canon Inc | 固体撮像素子およびその製造方法 |
JP2001160973A (ja) * | 1999-12-02 | 2001-06-12 | Nikon Corp | 固体撮像素子及び電子カメラ |
JP2001284566A (ja) * | 2000-04-03 | 2001-10-12 | Sharp Corp | 固体撮像装置、及びその製造方法 |
JP2002125239A (ja) * | 2000-10-17 | 2002-04-26 | Canon Inc | 撮像装置 |
JP2002170945A (ja) * | 2000-11-30 | 2002-06-14 | Nec Corp | 固体撮像装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5739548A (en) * | 1995-05-02 | 1998-04-14 | Matsushita Electronics Corporation | Solid state imaging device having a flattening layer and optical lenses |
JP3405620B2 (ja) * | 1995-05-22 | 2003-05-12 | 松下電器産業株式会社 | 固体撮像装置 |
JP3447510B2 (ja) * | 1997-04-09 | 2003-09-16 | Necエレクトロニクス株式会社 | 固体撮像素子、その製造方法及び固体撮像装置 |
US6228674B1 (en) | 1998-12-08 | 2001-05-08 | United Microelectronics Corp. | CMOS sensor and method of manufacture |
US6221687B1 (en) | 1999-12-23 | 2001-04-24 | Tower Semiconductor Ltd. | Color image sensor with embedded microlens array |
JP2002064193A (ja) * | 2000-08-22 | 2002-02-28 | Sony Corp | 固体撮像装置および製造方法 |
-
2003
- 2003-09-29 KR KR1020030067561A patent/KR100549589B1/ko active IP Right Grant
-
2004
- 2004-09-20 US US10/945,182 patent/US7365298B2/en active Active
- 2004-09-28 JP JP2004280823A patent/JP2005109490A/ja active Pending
- 2004-09-29 CN CNB2004100959289A patent/CN100438051C/zh active Active
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01269903A (ja) * | 1988-04-20 | 1989-10-27 | Nec Corp | 多層配線基板 |
JPH04257261A (ja) * | 1991-02-12 | 1992-09-11 | Sony Corp | 固体撮像装置 |
JPH04343470A (ja) * | 1991-05-21 | 1992-11-30 | Nec Corp | 固体撮像装置 |
JPH0595098A (ja) * | 1991-10-02 | 1993-04-16 | Olympus Optical Co Ltd | 固体撮像装置 |
JPH06125070A (ja) * | 1992-10-09 | 1994-05-06 | Mitsubishi Electric Corp | 固体撮像装置とその製造方法 |
JPH06310504A (ja) * | 1993-04-27 | 1994-11-04 | Nec Corp | 絶縁膜の構造とその製造方法 |
JPH1012854A (ja) * | 1996-06-27 | 1998-01-16 | Nec Corp | 固体撮像装置およびその製造方法 |
JPH11103036A (ja) * | 1997-09-29 | 1999-04-13 | Sony Corp | 固体撮像素子 |
JPH11274443A (ja) * | 1998-03-19 | 1999-10-08 | Canon Inc | 固体撮像装置及びその製造方法 |
JP2000228513A (ja) * | 1998-12-30 | 2000-08-15 | Hyundai Electronics Ind Co Ltd | カラ―イメ―ジセンサ及びその製造方法 |
JP2001085660A (ja) * | 1999-09-10 | 2001-03-30 | Toshiba Corp | 固体撮像装置及びその制御方法 |
JP2001156279A (ja) * | 1999-11-29 | 2001-06-08 | Canon Inc | 固体撮像素子およびその製造方法 |
JP2001160973A (ja) * | 1999-12-02 | 2001-06-12 | Nikon Corp | 固体撮像素子及び電子カメラ |
JP2001284566A (ja) * | 2000-04-03 | 2001-10-12 | Sharp Corp | 固体撮像装置、及びその製造方法 |
JP2002125239A (ja) * | 2000-10-17 | 2002-04-26 | Canon Inc | 撮像装置 |
JP2002170945A (ja) * | 2000-11-30 | 2002-06-14 | Nec Corp | 固体撮像装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101500344B1 (ko) * | 2008-08-26 | 2015-03-09 | 삼성전자 주식회사 | 이미지 센서 |
Also Published As
Publication number | Publication date |
---|---|
US7365298B2 (en) | 2008-04-29 |
CN1607675A (zh) | 2005-04-20 |
US20050067554A1 (en) | 2005-03-31 |
CN100438051C (zh) | 2008-11-26 |
KR20050031303A (ko) | 2005-04-06 |
KR100549589B1 (ko) | 2006-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4939206B2 (ja) | イメージセンサ及びその製造方法 | |
US7312093B2 (en) | Image sensor capable of adjusting focusing length for individual color and fabrication method thereof | |
US9429723B2 (en) | Optical waveguides in image sensors | |
US7646943B1 (en) | Optical waveguides in image sensors | |
JP2005109490A (ja) | イメージセンサー及びその製造方法 | |
TWI235405B (en) | Solid photographing device and its manufacturing method | |
US8030117B2 (en) | Image sensor and method for manufacturing the same | |
KR100900682B1 (ko) | 이미지센서 및 그 제조방법 | |
US9312289B2 (en) | Photoelectric conversion apparatus, manufacturing method thereof, and image pickup system | |
JP2006032897A (ja) | Cmosイメージセンサー及びその製造方法 | |
JP2003197886A (ja) | 固体撮像素子およびその製造方法 | |
KR20040000877A (ko) | 오목형 및 볼록형 마이크로렌즈를 갖는 씨모스 이미지센서및 그 제조 방법 | |
JP4435606B2 (ja) | 固体撮像装置及びカメラ | |
JP2003051585A (ja) | 固体撮像素子およびその製造方法 | |
KR20010059316A (ko) | 광감도 개선을 위한 이미지센서 및 그 제조방법 | |
JP4378108B2 (ja) | 光電変換装置およびその製造方法 | |
KR20050105586A (ko) | 이미지센서 및 그 제조방법 | |
KR20060077075A (ko) | 시모스 이미지센서 및 그의 제조방법 | |
KR100410635B1 (ko) | 이미지센서 제조 방법 | |
KR20060077110A (ko) | 시모스 이미지센서 및 그의 제조방법 | |
KR20070055865A (ko) | 이미지 센서 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070821 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20090303 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090512 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090622 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20090807 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100628 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100702 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100930 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20101005 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101101 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101203 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110225 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110302 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110331 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110405 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110428 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20110928 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120111 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120511 |
|
A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20120627 |
|
A912 | Removal of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20120921 |