JP2005101403A - 半導体装置のドライエッチング方法 - Google Patents
半導体装置のドライエッチング方法 Download PDFInfo
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- JP2005101403A JP2005101403A JP2003334784A JP2003334784A JP2005101403A JP 2005101403 A JP2005101403 A JP 2005101403A JP 2003334784 A JP2003334784 A JP 2003334784A JP 2003334784 A JP2003334784 A JP 2003334784A JP 2005101403 A JP2005101403 A JP 2005101403A
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- gate
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- etching
- polysilicon gate
- polysilicon
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000001312 dry etching Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 71
- 229920005591 polysilicon Polymers 0.000 claims abstract description 71
- 238000005530 etching Methods 0.000 claims abstract description 31
- 239000012535 impurity Substances 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 230000009977 dual effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】 N型ポリシリコンゲートとP型ポリシリコンゲートが配置されたデバイスにおいて、両ゲートを同時にエッチングする場合に、ダミー電極であるノンドープポリシリコンゲートの面積をN型及びP型のドープポリシリコンゲートの全面積よりも多くするように配置して、ドープポリシリコンよりもノンドープのポリシリコンが支配的になるようにして、ポリシリコンゲートをドライエッチングするようにした。
【選択図】 図3
Description
2 ポリシリコン層
3 レジスト
4 N型トランジスタゲート領域
5 P型トランジスタゲート領域
6 ノンドープポリシリコン領域
Claims (5)
- N型ポリシリコンゲート及びP型ポリシリコンゲートが同時に配置される半導体装置において、ポリシリコンゲートエッチングのためのノンドープポリシリコンのダミーゲートを、前記N型ポリシリコンゲート及びP型ポリシリコンゲートの全面積よりも多い面積で配置したことを特徴とする半導体装置装置。
- 前記N型ポリシリコンゲート及び前記P型ポリシリコンゲートの不純物はそれぞれリン及びボロンであることを特徴とする請求項1記載の半導体装置装置。
- N型ポリシリコンゲート及びP型ポリシリコンゲートを同時にゲートエッチングする半導体装置のドライエッチング方法において、ポリシリコンゲートエッチングのためのノンドープポリシリコンのダミーゲートのエッチング面積を、前記N型ポリシリコンゲート及びP型ポリシリコンゲートの全面積よりも多くしてエッチングすることを特徴とする半導体装置装置のドライエッチング方法。
- 前記ゲートエッチングは、2段階エッチングであることを特徴とする請求項3記載の半導体装置装置のドライエッチング方法。
- 前記2段階エッチングは1段階がHBrとO2の混合ガス、2段階がHBr,O2及びHeの混合ガスであることを特徴とする請求項4記載の半導体装置装置のドライエッチング方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003334784A JP2005101403A (ja) | 2003-09-26 | 2003-09-26 | 半導体装置のドライエッチング方法 |
US10/798,482 US7955963B2 (en) | 2003-09-26 | 2004-03-12 | Dry etching method for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003334784A JP2005101403A (ja) | 2003-09-26 | 2003-09-26 | 半導体装置のドライエッチング方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005101403A true JP2005101403A (ja) | 2005-04-14 |
Family
ID=34373181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003334784A Pending JP2005101403A (ja) | 2003-09-26 | 2003-09-26 | 半導体装置のドライエッチング方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7955963B2 (ja) |
JP (1) | JP2005101403A (ja) |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4989057A (en) * | 1988-05-26 | 1991-01-29 | Texas Instruments Incorporated | ESD protection for SOI circuits |
US5116778A (en) * | 1990-02-05 | 1992-05-26 | Advanced Micro Devices, Inc. | Dopant sources for cmos device |
US5637900A (en) * | 1995-04-06 | 1997-06-10 | Industrial Technology Research Institute | Latchup-free fully-protected CMOS on-chip ESD protection circuit |
US5783850A (en) * | 1995-04-27 | 1998-07-21 | Taiwan Semiconductor Manufacturing Company | Undoped polysilicon gate process for NMOS ESD protection circuits |
US5665203A (en) * | 1995-04-28 | 1997-09-09 | International Business Machines Corporation | Silicon etching method |
US5827761A (en) * | 1997-02-25 | 1998-10-27 | Advanced Micro Devices, Inc. | Method of making NMOS and devices with sequentially formed gates having different gate lengths |
JPH10256549A (ja) * | 1997-03-14 | 1998-09-25 | Nec Corp | 半導体装置及びその製造方法 |
KR100268923B1 (ko) * | 1997-09-29 | 2000-10-16 | 김영환 | 반도체소자의이중게이트형성방법 |
JPH11204506A (ja) | 1998-01-19 | 1999-07-30 | Mitsubishi Electric Corp | 回路パターンが形成されたウェハおよびその製造方法 |
US6020240A (en) * | 1998-04-07 | 2000-02-01 | Texas Instruments-Acer Incorporated | Method to simultaneously fabricate the self-aligned silicided devices and ESD protection devices |
US5998247A (en) * | 1998-04-09 | 1999-12-07 | Texas Instruments - Acer Incorporated | Process to fabricate the non-silicide region for electrostatic discharge protection circuit |
JP2000058511A (ja) | 1998-08-03 | 2000-02-25 | Matsushita Electron Corp | ドライエッチング方法 |
JP2000164732A (ja) | 1998-11-30 | 2000-06-16 | Sony Corp | 半導体装置およびその製造方法 |
US6117723A (en) * | 1999-06-10 | 2000-09-12 | Taiwan Semiconductor Manufacturing Company | Salicide integration process for embedded DRAM devices |
US6605543B1 (en) * | 1999-12-30 | 2003-08-12 | Koninklijke Philips Electronics N.V. | Process to control etch profiles in dual-implanted silicon films |
US6541359B1 (en) * | 2000-01-31 | 2003-04-01 | Koninklijke Philips Electronics N.V. | Optimized gate implants for reducing dopant effects during gate etching |
US6376294B1 (en) * | 2001-01-08 | 2002-04-23 | Taiwan Semiconductor Manufacturing Company | Method to define poly dog-bone for word line strapping contact at stitch area in embedded DRAM process |
US6429067B1 (en) * | 2001-01-17 | 2002-08-06 | International Business Machines Corporation | Dual mask process for semiconductor devices |
US6773999B2 (en) * | 2001-07-18 | 2004-08-10 | Matsushita Electric Industrial Co., Ltd. | Method for treating thick and thin gate insulating film with nitrogen plasma |
US6703269B2 (en) * | 2002-04-02 | 2004-03-09 | International Business Machines Corporation | Method to form gate conductor structures of dual doped polysilicon |
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2003
- 2003-09-26 JP JP2003334784A patent/JP2005101403A/ja active Pending
-
2004
- 2004-03-12 US US10/798,482 patent/US7955963B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US7955963B2 (en) | 2011-06-07 |
US20050067658A1 (en) | 2005-03-31 |
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