JP2005101203A - チップ型led - Google Patents
チップ型led Download PDFInfo
- Publication number
- JP2005101203A JP2005101203A JP2003331980A JP2003331980A JP2005101203A JP 2005101203 A JP2005101203 A JP 2005101203A JP 2003331980 A JP2003331980 A JP 2003331980A JP 2003331980 A JP2003331980 A JP 2003331980A JP 2005101203 A JP2005101203 A JP 2005101203A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- diode chip
- chip
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000009413 insulation Methods 0.000 abstract 3
- 239000012780 transparent material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 6
- 230000001413 cellular effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】 前記発光ダイオードチップ15を、前記絶縁基板の上面に、当該発光ダイオードチップにおけるアノード電極15fを下向きに、カソード電極15aを上向きにして搭載する。
【選択図】 図2
Description
「絶縁基板と、その上面に搭載した発光ダイオードチップと、前記絶縁基板の上面に前記発光ダイオードチップを密封するように設けた透明体によるパッケージ体とから成るチップ型LEDにおいて、
前記発光ダイオードチップを、前記絶縁基板の上面に、当該発光ダイオードチップにおけるアノード電極を下向きに、カソード電極を上向きにして搭載した。」
ことを特徴としている。
「前記請求項1の記載において、前記発光ダイオードチップにおける発光層を、当該発光ダイオードチップのうち前記カソード電極に近接する部位に位置する一方、前記発光ダイオードチップにおける側面を、前記カソード電極側からアノード電極側に向かって内向きに傾斜した。」
ことを特徴としている。
「前記請求項1又は2の記載において、前記絶縁基板の上面のうち少なくとも前記発光ダイオードチップの周囲の部分を白色に配色した。」
ことを特徴としている。
12 絶縁基板
13,14 端子電極
15 発光ダイオードチップ
15a 発光ダイオードチップのカソード電極
15b 発光ダイオードチップの基板
15c 発光ダイオードチップのn型半導体層
15d 発光ダイオードチップの発光層
15e 発光ダイオードチップのp型半導体層
15f 発光ダイオードチップのアノード電極
16 パッケージ体
17 金属線
18 白色の配色膜
Claims (3)
- 絶縁基板と、その上面に搭載した発光ダイオードチップと、前記絶縁基板の上面に前記発光ダイオードチップを密封するように設けた透明体によるパッケージ体とから成るチップ型LEDにおいて、
前記発光ダイオードチップを、前記絶縁基板の上面に、当該発光ダイオードチップにおけるアノード電極を下向きに、カソード電極を上向きにして搭載したことを特徴とするチップ型LED。 - 前記請求項1の記載において、前記発光ダイオードチップにおける発光層を、当該発光ダイオードチップのうち前記カソード電極に近接する部位に位置する一方、前記発光ダイオードチップにおける側面を、前記カソード電極側からアノード電極側に向かって内向きに傾斜したことを特徴とするチップ型LED。
- 前記請求項1又は2の記載において、前記絶縁基板の上面のうち少なくとも前記発光ダイオードチップの周囲の部分を白色に配色したことを特徴とするチップ型LED。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003331980A JP4166136B2 (ja) | 2003-09-24 | 2003-09-24 | チップ型led |
US10/572,861 US7323704B2 (en) | 2003-09-24 | 2004-06-07 | Chip type led |
KR1020047018437A KR101202266B1 (ko) | 2003-09-24 | 2004-06-07 | 칩형 led |
PCT/JP2004/007932 WO2005029600A1 (ja) | 2003-09-24 | 2004-06-07 | チップ型led |
EP04745642A EP1672703A1 (en) | 2003-09-24 | 2004-06-07 | Chip type led |
CNB200480000363XA CN100391015C (zh) | 2003-09-24 | 2004-06-07 | 芯片型led |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003331980A JP4166136B2 (ja) | 2003-09-24 | 2003-09-24 | チップ型led |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005101203A true JP2005101203A (ja) | 2005-04-14 |
JP4166136B2 JP4166136B2 (ja) | 2008-10-15 |
Family
ID=34373058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003331980A Expired - Lifetime JP4166136B2 (ja) | 2003-09-24 | 2003-09-24 | チップ型led |
Country Status (6)
Country | Link |
---|---|
US (1) | US7323704B2 (ja) |
EP (1) | EP1672703A1 (ja) |
JP (1) | JP4166136B2 (ja) |
KR (1) | KR101202266B1 (ja) |
CN (1) | CN100391015C (ja) |
WO (1) | WO2005029600A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2012050110A1 (ja) * | 2010-10-12 | 2014-02-24 | ローム株式会社 | Ledモジュール |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4166136B2 (ja) * | 2003-09-24 | 2008-10-15 | ローム株式会社 | チップ型led |
TW201448263A (zh) | 2006-12-11 | 2014-12-16 | Univ California | 透明發光二極體 |
JP5340583B2 (ja) * | 2007-11-26 | 2013-11-13 | スタンレー電気株式会社 | 半導体発光装置 |
KR101646263B1 (ko) * | 2010-03-31 | 2016-08-08 | 엘지이노텍 주식회사 | 반사층이 포함된 패시브 매트릭스 oled 모듈 및 그 제조 방법 |
CN106206902B (zh) * | 2016-09-30 | 2018-11-06 | 映瑞光电科技(上海)有限公司 | 发光二极管芯片 |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6050978A (ja) * | 1983-08-30 | 1985-03-22 | Nec Corp | 半導体装置 |
JP2547072B2 (ja) | 1988-06-06 | 1996-10-23 | 三菱電線工業株式会社 | 発光ダイオード照明具 |
US4935665A (en) * | 1987-12-24 | 1990-06-19 | Mitsubishi Cable Industries Ltd. | Light emitting diode lamp |
JPH05327012A (ja) | 1992-05-15 | 1993-12-10 | Sanyo Electric Co Ltd | 炭化ケイ素発光ダイオード |
JPH0832110A (ja) * | 1994-07-19 | 1996-02-02 | Oki Electric Ind Co Ltd | 端面発光型led、端面発光型発光素子の製造方法、端面発光型発光素子の発光特性測定方法 |
US5705834A (en) * | 1996-04-23 | 1998-01-06 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Increased efficiency LED |
JPH1050734A (ja) | 1996-07-31 | 1998-02-20 | Shichizun Denshi:Kk | チップ型半導体 |
JPH11354837A (ja) * | 1998-06-05 | 1999-12-24 | Mitsubishi Chemical Corp | 発光ダイオードおよびその製造方法 |
JP3784976B2 (ja) * | 1998-12-22 | 2006-06-14 | ローム株式会社 | 半導体装置 |
RU2142661C1 (ru) * | 1998-12-29 | 1999-12-10 | Швейкин Василий Иванович | Инжекционный некогерентный излучатель |
DE10006738C2 (de) * | 2000-02-15 | 2002-01-17 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung |
JP2003023183A (ja) * | 2001-07-06 | 2003-01-24 | Stanley Electric Co Ltd | 面実装型ledランプ |
JP4166136B2 (ja) * | 2003-09-24 | 2008-10-15 | ローム株式会社 | チップ型led |
-
2003
- 2003-09-24 JP JP2003331980A patent/JP4166136B2/ja not_active Expired - Lifetime
-
2004
- 2004-06-07 EP EP04745642A patent/EP1672703A1/en not_active Withdrawn
- 2004-06-07 WO PCT/JP2004/007932 patent/WO2005029600A1/ja active Application Filing
- 2004-06-07 CN CNB200480000363XA patent/CN100391015C/zh not_active Expired - Fee Related
- 2004-06-07 KR KR1020047018437A patent/KR101202266B1/ko active IP Right Grant
- 2004-06-07 US US10/572,861 patent/US7323704B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2012050110A1 (ja) * | 2010-10-12 | 2014-02-24 | ローム株式会社 | Ledモジュール |
JP6131048B2 (ja) * | 2010-10-12 | 2017-05-17 | ローム株式会社 | Ledモジュール |
US10050179B2 (en) | 2010-10-12 | 2018-08-14 | Rohm Co., Ltd. | LED module |
US10749079B2 (en) | 2010-10-12 | 2020-08-18 | Rohm Co., Ltd. | LED module |
US10950759B2 (en) | 2010-10-12 | 2021-03-16 | Rohm Co., Ltd. | LED module |
Also Published As
Publication number | Publication date |
---|---|
CN100391015C (zh) | 2008-05-28 |
CN1698214A (zh) | 2005-11-16 |
KR101202266B1 (ko) | 2012-11-16 |
US7323704B2 (en) | 2008-01-29 |
KR20060059336A (ko) | 2006-06-01 |
JP4166136B2 (ja) | 2008-10-15 |
WO2005029600A1 (ja) | 2005-03-31 |
EP1672703A1 (en) | 2006-06-21 |
US20070040253A1 (en) | 2007-02-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101124510B1 (ko) | 발광 다이오드 | |
AU2006254610B2 (en) | Package structure of semiconductor light-emitting device | |
JP5119621B2 (ja) | 発光装置 | |
JP2005064047A (ja) | 発光ダイオード | |
US9054258B2 (en) | Semiconductor light emitting device | |
US7973332B2 (en) | Lamp and method of making the same | |
US7731405B2 (en) | Side-emission type light-emitting diode and a backlight unit using the light-emitting diode | |
US9246074B2 (en) | Light emitting device | |
KR102075561B1 (ko) | 발광 소자, 발광 모듈 및 조명 시스템 | |
JP2008251938A (ja) | 半導体発光装置 | |
JP2000124506A (ja) | 半導体発光素子 | |
KR20070103319A (ko) | 발광 다이오드 칩의 밀봉 구조 및 그 방법 | |
JP4166136B2 (ja) | チップ型led | |
JP2005347677A (ja) | 発光ダイオード構造 | |
JP4679917B2 (ja) | 半導体発光装置 | |
JP2006054210A (ja) | 発光装置 | |
JP2018032689A (ja) | 発光装置、及び照明装置 | |
JP2007103981A (ja) | 光源装置 | |
KR20070025008A (ko) | 렌즈 장착식 발광다이오드 패키지 | |
JP2010040825A (ja) | 発光装置 | |
KR100675204B1 (ko) | 발광 다이오드 패키지 | |
KR20110039228A (ko) | 렌즈 장착식 발광다이오드 패키지 | |
KR20110051176A (ko) | 렌즈 장착식 발광다이오드 패키지 | |
KR20170106764A (ko) | 반도체 발광 소자 및 이를 포함하는 백라이트 어셈블리 | |
KR102142712B1 (ko) | 광원 모듈 및 이를 구비한 조명 시스템 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060530 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060629 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20060823 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061018 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20061030 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20061201 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080729 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4166136 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110808 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110808 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120808 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130808 Year of fee payment: 5 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |