CN1698214A - 芯片型led - Google Patents

芯片型led Download PDF

Info

Publication number
CN1698214A
CN1698214A CNA200480000363XA CN200480000363A CN1698214A CN 1698214 A CN1698214 A CN 1698214A CN A200480000363X A CNA200480000363X A CN A200480000363XA CN 200480000363 A CN200480000363 A CN 200480000363A CN 1698214 A CN1698214 A CN 1698214A
Authority
CN
China
Prior art keywords
emitting diode
light
mentioned
chip
backlight unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA200480000363XA
Other languages
English (en)
Other versions
CN100391015C (zh
Inventor
板井顺一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN1698214A publication Critical patent/CN1698214A/zh
Application granted granted Critical
Publication of CN100391015C publication Critical patent/CN100391015C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/10155Shape being other than a cuboid
    • H01L2924/10158Shape being other than a cuboid at the passive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

一种芯片型LED,其由绝缘基板(12),在其上面搭载的发光二极管芯片(15);和在上述绝缘基板的上面按照密封上述发光二极管芯片而设置的透明体(16)构成的封装体所组成,由上述发光二极管芯片所发出的光在按照横向射出的情况下,将该芯片型LED以薄型构成。将上述发光二极管芯片(15),搭载在上述绝缘基板的上面,使该发光二极管芯片中的阳极电极(15f)向下,阴极电极(15a)向上。

Description

芯片型LED
技术领域
本发明涉及一种将作为光源的发光二极管芯片,用透明体制成的封装体密封后而成构造的芯片型LED。
背景技术
图4是表示以往的芯片型LED的立体图,该芯片型LED1,在芯片型绝缘基板2的上面,形成一对端子电极3、4,在这一对端子电极3,4中的一个的端子电极3的上面,搭载发光二极管芯片5,使其阳极电极5b向上,阴极电极5a按照与上述一个的端子电极3保持电连接而向下,使上面的阳极电极5b和另一个的端子电极4之间通过图中未示的细金属线的引线连接等保持电连接,还有,在上述绝缘基板2上面,设置有透明体封装体6,密封上述发光二极管芯片5,形成这样的构成。(参照专利文献1)。
而且,过去,将这种构成的多个芯片型LED,在便携电话机等当中,对于设置排列成矩阵状的多个按键开关作为背光光源使用的情况下,其构成如图5所示,通过在便携电话机A内的各按键开关B的内侧的电路基板C中的上述各按键开关B之间的部位,配设上述构成的芯片型LED1,使上述各按键开关B部分,利用从各芯片型LED1的封装体6的侧面横向发射的光进行照明。
但是,上述构成的芯片型LED1中,发光二极管芯片5所发出光中的大部分,从该发光二极管5的侧面向横向射出,但是由于一部分光,也从上面的阳极电极5b向上发射,因此从发光二极管芯片5的侧面射出的光量,被减少了一部分的光从上面的阳极电极5b向上发射的量。
换言之,对上述各按键开关B的部分的照明,也消弱了发光二极管芯片5所发出光的一部分从上面的阳极电极5向上射出的量。
这里,最近,将上述构成的芯片型LED1作为背光光源使用的情况下,在其封装体6的上面,设置凹部,其按照将从上述发光二极管5的上面的阳极电极5所发射的光,在上述凹部沿着横向的方向曲折那样构成。
然而,这样的构成,在上述封装体6内其上面和发光二极管5的上面之间,必须确保只有在上述上面设置的凹部的厚度的尺寸,因此,将设置该凹部的厚度尺寸,与上述封装体6的高度尺寸H0′相加后,由于增大了芯片型LED1的整体高度尺寸H′,在上述芯片型LED作为背光光源使用的情况下,存在不能构成薄型的问题。
专利文献:特开平10-50734号公报。
发明内容
本发明,就是解决上述问题,使将芯片型LED作为背光光源使用的情况下能够以薄型而构成。
为解决该技术课题本发明之一,由绝缘基板、发光二极管、透明体组成芯片型LED;上述发光二极管搭载在上述绝缘基板的上面;上述封装体由透明体构成,该透明体在上述绝缘基板的上面按照密封上述发光二极管芯片那样而设置,上述芯片型LED的特征在于,将上述发光二极管芯片,搭载在上述绝缘基板的上面,使该发光二极管芯片的阳极电极向下、阴极电极向上。
另外,本发明之二其特征在于,上述发明之一中,上述发光二极管芯片中的发光层,位于与该发光二极管芯片内接近于上述阴极电极的部位,另一方面,将上述发光二极管芯片中的侧面,从上述阴极电极一侧向阳极电极一侧内向地倾斜。
还有,本发明之三,其特征在于,上述发明之一或之二中,上述绝缘基板上面至少使上述发光二极管芯片的周围部分配色为白色。
(发明效果)
发光二极管芯片,在该发光二极管芯片内的阴极电极一侧的部分,存在不透明的基板。
这里,将该发光二极管芯片,通过搭载在绝缘基板的上面,使该发光二极管芯片中的阳极电极向下,阴极电极向上,就能够由该发光二极管芯片的基板阻止上述发光二极管芯片的发光层中所发出的光,从阴极电极一侧向上射出。
即,根据本发明,通过阻止从发光二极管芯片上面向上射出的量,而增强从发光二极管芯片的侧面横向射出的光,由此就能省略如上述以往那样,在对于发光二极管芯片进行封装的封装体上面设置凹部。因此,上述封装体的高度尺寸,进而,将芯片型LED的整体高度尺寸以薄型构成,使之作为用于便携电话机的按键开关的背光光源。
这种情况下,根据本发明之二所述的构成,使发光二极管芯片的发光层具有比较大面积后,由于从向内倾斜的侧面以光的衰减较少的状态,使该发光层内发出的光射出,因此能使横向射出的光量,大幅地增强。
加之,根据本发明之三所述的构成,因从发光二极管芯片向绝缘基板一侧发射的光,通过白色的配色能够被反射,因此横向发射的光强能进一步增强。
附图说明
图1是表示本发明的实施形式的芯片型LED立体图。
图2是图1的II-II向剖视图。
图3是将上述芯片型LED作为按键开关的背光光源使用的情况下的剖视图。
图4表示以往的芯片型LED的立体图。
图5表示以往的芯片型LED的使用例的立体图。
图中:11-芯片型LED,12-绝缘基板,13、14-端子电极,15-发光二极管芯片,15a-发光二极管芯片的阴极电极,15b-发光二极管芯片的基板,15c-发光二极管芯片的n型半导体层,15d-发光二极管芯片的发光层,15e-发光二极管芯片的p型半导体层,15f-发光二极管芯片的阳极电极,16-封装体,17-金属线,18-白色配色膜。
具体实施方式
以下,参照图1以及图2的附图来说明本发明的实施形式。
该图中,符号11表示本发明的实施形式的芯片型LED。
该芯片型LED11包括:在上面形成一对端子电极13、14的芯片型绝缘基板12;在该绝缘基板12的上面搭载的发光二极管芯片15;和在上述绝缘基板12的上面按照密封上述发光二极管芯片15那样设置的透明体制的封装体16。
上述发光二极管芯片15包括:重叠在基板15b,该基板15b通过里面具有阴极电极15a的硅等形成;n型半导体层15c;发光层15d;p型半导体层15e以及阳极电极15f。
而且,上述发光二极管芯片15,使上述n型半导体层15c变薄,另一方面,使p型半导体层15e变厚,由此使该发光层15d位于接近阴极电极15a的部位而构成。
加之,上述发光二极管芯片15,将其一端的阴极电极15a一侧的尺寸D1增大,其另一端的阳极电极15f一侧的尺寸D2变小,由此使该发光二极管芯片15的侧面15′,从其一端的阴极电极15a一侧开始向其另一端的阳极电极15f一侧向内倾斜而构成。
然后,将上述发光二极管芯片15,在上述绝缘基板12上,使该发光二极管芯片15的阴极电极15a向上,使阳极电极15f向下,并且,将阳极电极15f电连接地焊接在一个的端子电极13上,另一方面,该发光二极管芯片15的上面的阴极电极15a,和另一个的端子电极14之间,由通过细金属线17由引线连接等保持电连接而构成。
该构成中,通过对上述发光二极管芯片15的通电,该发光层15d发出的光,因被发光二极管芯片15的基板15b阻止其从该发光二极管芯片15的上面向上射出,因而其发出的光几乎全部成为从横向发射的。
这样,就能省略如过去那样,在密封上述发光二极管芯片15的封装体16的上面设置凹部,从而可使该封装体16的上面和上述发光二极管芯片15的上面之间的厚度变薄,因而降低上述封装体16的高度尺寸H0,进而,芯片型LED11的整体的高度尺寸H变低,换言之,能使芯片型LED11成为薄型。
即,根据本发明,横向发射光的芯片型LED11能够构成薄型,可以将该构成的芯片型LED,与上述图5的情况一样,通过将其配装在按键开关B之间的部位,该部位位于配设在便携电话机A的按键开关B里面侧的电路基板C内,在作为上述各按键开关B的背光光源使用的情况下,如图3所示,因各按键开关B和电路基板C之间的间隙S能变窄,所以能如此之小型轻便。
而且,在上述发光二极管芯片15中的发光层15d,位于与该发光二极管芯片15内的上层的阴极电极15a接近的部位,另一方面,上述发光二极管芯片15的侧面15′,通过从该发光二极管芯片15中的阴极电极15a向阳极电极15f内向倾斜,由此,使发光层15d面积比较大,然后,在该发光层15d中发出的光,能够在从向内倾斜的侧面15′,以光衰减很少的状态射出,因此能够增加横向发射的发光量。
然而,从上述发光二极管芯片15的侧面15′横向发射出的光的一部分,也到达了绝缘基板12的上面,在从该绝缘基板12的上面,上述发光二极管芯片15发出的光到达的部分,即在上述发光二极管芯片的周围部分,形成白色的配色膜18。
根据这样的构成,到达绝缘基板12的上面的光,因通过上述白色配色膜18能够被横向反射,因此横向射出的光量能进一步增强。
另外,代替形成该白色的配色膜18,也可以是使上述绝缘基板12的上面成为白色。

Claims (3)

1、一种芯片型LED,是由绝缘基板、发光二极管、封装体构成芯片型LED;上述发光二极管搭载在上述绝缘基板的上面;上述封装体由透明体构成,该透明体是在上述绝缘基板的上面按照密封上述发光二极管芯片那样设置,上述芯片型LED的特征在于,
将上述发光二极管芯片,搭载在上述绝缘基板的上面,使上述发光二极管芯片的阳极电极向下、阴极电极向上。
2、根据权利要求1所述的芯片型LED,其特征在于,
上述发光二极管芯片中的发光层,位于与该发光二极管芯片内接近于上述阴极电极的部位,另一方面,将上述发光二极管芯片中的侧面,从上述阴极电极侧向阳极电极一侧内向地倾斜。
3、根据权利要求1或者2所述的芯片型LED,其特征在于,上述绝缘基板上面至少使上述发光二极管芯片的周围部分配色为白色。
CNB200480000363XA 2003-09-24 2004-06-07 芯片型led Expired - Fee Related CN100391015C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP331980/2003 2003-09-24
JP2003331980A JP4166136B2 (ja) 2003-09-24 2003-09-24 チップ型led

Publications (2)

Publication Number Publication Date
CN1698214A true CN1698214A (zh) 2005-11-16
CN100391015C CN100391015C (zh) 2008-05-28

Family

ID=34373058

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB200480000363XA Expired - Fee Related CN100391015C (zh) 2003-09-24 2004-06-07 芯片型led

Country Status (6)

Country Link
US (1) US7323704B2 (zh)
EP (1) EP1672703A1 (zh)
JP (1) JP4166136B2 (zh)
KR (1) KR101202266B1 (zh)
CN (1) CN100391015C (zh)
WO (1) WO2005029600A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101447541B (zh) * 2007-11-26 2012-05-30 斯坦雷电气株式会社 半导体器件
CN106206902A (zh) * 2016-09-30 2016-12-07 映瑞光电科技(上海)有限公司 发光二极管芯片

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4166136B2 (ja) * 2003-09-24 2008-10-15 ローム株式会社 チップ型led
US8294166B2 (en) 2006-12-11 2012-10-23 The Regents Of The University Of California Transparent light emitting diodes
KR101646263B1 (ko) * 2010-03-31 2016-08-08 엘지이노텍 주식회사 반사층이 포함된 패시브 매트릭스 oled 모듈 및 그 제조 방법
JP6131048B2 (ja) * 2010-10-12 2017-05-17 ローム株式会社 Ledモジュール
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050978A (ja) 1983-08-30 1985-03-22 Nec Corp 半導体装置
US4935665A (en) 1987-12-24 1990-06-19 Mitsubishi Cable Industries Ltd. Light emitting diode lamp
JP2547072B2 (ja) * 1988-06-06 1996-10-23 三菱電線工業株式会社 発光ダイオード照明具
JPH05327012A (ja) 1992-05-15 1993-12-10 Sanyo Electric Co Ltd 炭化ケイ素発光ダイオード
JPH0832110A (ja) * 1994-07-19 1996-02-02 Oki Electric Ind Co Ltd 端面発光型led、端面発光型発光素子の製造方法、端面発光型発光素子の発光特性測定方法
US5705834A (en) * 1996-04-23 1998-01-06 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Increased efficiency LED
JPH1050734A (ja) 1996-07-31 1998-02-20 Shichizun Denshi:Kk チップ型半導体
JPH11354837A (ja) 1998-06-05 1999-12-24 Mitsubishi Chemical Corp 発光ダイオードおよびその製造方法
JP3784976B2 (ja) 1998-12-22 2006-06-14 ローム株式会社 半導体装置
RU2142661C1 (ru) * 1998-12-29 1999-12-10 Швейкин Василий Иванович Инжекционный некогерентный излучатель
DE10006738C2 (de) * 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
JP2003023183A (ja) * 2001-07-06 2003-01-24 Stanley Electric Co Ltd 面実装型ledランプ
JP4166136B2 (ja) * 2003-09-24 2008-10-15 ローム株式会社 チップ型led

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101447541B (zh) * 2007-11-26 2012-05-30 斯坦雷电气株式会社 半导体器件
CN106206902A (zh) * 2016-09-30 2016-12-07 映瑞光电科技(上海)有限公司 发光二极管芯片

Also Published As

Publication number Publication date
CN100391015C (zh) 2008-05-28
WO2005029600A1 (ja) 2005-03-31
JP4166136B2 (ja) 2008-10-15
KR101202266B1 (ko) 2012-11-16
JP2005101203A (ja) 2005-04-14
KR20060059336A (ko) 2006-06-01
EP1672703A1 (en) 2006-06-21
US20070040253A1 (en) 2007-02-22
US7323704B2 (en) 2008-01-29

Similar Documents

Publication Publication Date Title
CN1173417C (zh) 半导体发光器件及面发光装置
CN1187844C (zh) 片式发光二极管及其制造方法
CN101075609A (zh) 发光二极管芯片的封装结构及其方法
CN1497744A (zh) 发光二极管与背景光装置
CN1652366A (zh) 发光二极管
CN1674316A (zh) 半导体发光器件
CN101226979A (zh) 半导体发光器件
CN1218611C (zh) 有机el显示装置
CN1832223A (zh) 有机电致发光显示器及其制造方法
CN1806268A (zh) 显示器
CN1698214A (zh) 芯片型led
CN2867600Y (zh) 发光二极管封装结构
CN1614479A (zh) 照明装置和结合该照明装置的显示装置
CN1735976A (zh) 发光二极管
CN1265472C (zh) 一种有机发光二极管
CN200969348Y (zh) 发光二极管芯片的封装结构
CN1521863A (zh) 发光二极管的封装装置
CN1635564A (zh) 显示装置
KR102583731B1 (ko) 협-베젤 전계 발광 조명장치
CN1200464C (zh) 电致发光元件的封装方法
CN1905220A (zh) 发光二极管封装结构
CN2586251Y (zh) 白光发光二极管的封装结构
CN1516526A (zh) 有机电致发光显示装置
CN1812141A (zh) 白光发光二极管组件及其制造方法
CN2664204Y (zh) 内置驱动集成电路芯片的发光半导体器件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080528

Termination date: 20190607

CF01 Termination of patent right due to non-payment of annual fee