CN101447541B - 半导体器件 - Google Patents

半导体器件 Download PDF

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CN101447541B
CN101447541B CN2008101781667A CN200810178166A CN101447541B CN 101447541 B CN101447541 B CN 101447541B CN 2008101781667 A CN2008101781667 A CN 2008101781667A CN 200810178166 A CN200810178166 A CN 200810178166A CN 101447541 B CN101447541 B CN 101447541B
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semiconductor device
bonding agent
semiconductor
equipped section
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CN101447541A (zh
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田中稔
渡边晴志
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Stanley Electric Co Ltd
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Abstract

本发明提供一种提高了基板和半导体元件的密合强度的可靠性高的半导体器件。半导体器件(10)具有：树脂基板(1)；以及半导体元件(3)，其通过将树脂作为基础材料的粘接剂(4)安装在形成于所述树脂基板上的导体图案(2)的元件搭载部(2a)上。元件搭载部(2a)具有在与半导体元件底面固定的固定区域的外侧具有切口部(21a)的形状，粘接剂(4)在切口部(21a)中与树脂基板(1)接触。

Description

半导体器件
技术领域
本发明涉及通过粘接剂将半导体元件配置在导体图案上的半导体器件，特别涉及提高了可靠性的半导体发光器件。
背景技术
图6示出专利文献1中公开的半导体发光器件的立体图。
在形成于绝缘基板上的电极图案上，通过导电性粘接剂接合有发光二极管元件，并通过透光性树脂体密封。
【专利文献1】日本特开平11-046018号公报
在使用了图6所示的半导体发光器件的半导体发光装置中，产生如下问题：半导体发光器件的电极图案从透光性树脂体上剥离，发光二极管元件浮起而导致不点亮。
本申请发明者发现，在向电路基板等装配半导体发光器件时，在回流(reflow)方式的锡焊工序后产生该问题。而且，在回流方式的锡焊工序这种高温环境下，由于电极图案和透光性树脂体之间的热膨胀系数差，产生电极图案和透光性树脂体之间的剥离，进而，产生发光二极管元件与透光性树脂体一起从电极图案剥离的情况。
发明内容
因此，本发明的目的在于，提供一种防止半导体元件的剥离来提高可靠性的半导体器件。
本发明的半导体器件具有：树脂基板；导体图案，其形成在所述树脂基板上；以及半导体元件，其通过将树脂作为基础材料的粘接剂安装在所述导体图案的元件搭载部上，所述元件搭载部具有在与所述半导体元件底面固定的固定区域的外侧具有切口部的形状，所述切口部形成于未到达与所述半导体元件底面固定的固定区域的范围内，所述粘接剂在所述切口部中与树脂基板接触。
根据本发明的半导体器件，将树脂作为基础材料的粘接剂在切口部中与树脂基板接触，由此，能够提高元件与树脂基板和搭载部的接合强度。并且，所述切口部形成在搭载部中与半导体元件底面固定的固定区域的外侧，所以，不仅确保了将树脂作为基础材料的粘接剂和树脂基板的接触面积，而且抑制了气泡的卷入，使粘接剂容易超过导体图案而到达树脂基板，能够提高半导体器件的可靠性。而且，例如，即使在具有覆盖半导体元件的密封树脂的情况下，也能够抑制在高温环境下产生元件的剥离和浮起。并且，切口部能够防止粘接剂爬上半导体元件的侧面，能够防止粘接剂到达半导体元件的PN结面而短路的情况、以及光学特性变化的情况。
作为本发明的半导体元件，可以使用半导体发光元件或半导体受光元件，可以使用其一对电极形成在半导体元件的上表面和下表面上的元件、或仅形成在上表面上的元件。在电极形成在半导体元件的上表面和下表面上的情况下，半导体元件的底面成为下侧的电极，在电极仅形成在上表面上的情况下，半导体元件的底面成为半导体元件基板或半导体发光层。
关于本发明的树脂基板，搭载了半导体元件一侧的形成有导体图案的表面由树脂构成，包含玻璃环氧基板等渗透了树脂的树脂基板、和在金属薄板上形成树脂模的树脂基板。
本发明的粘接剂只要将树脂作为基础材料即可，可以根据用途任意地选择导电性粘接剂、绝缘性粘接剂、透光性粘接剂等。并且，既可以形成为局部覆盖搭载部，也可以形成为完全覆盖搭载部。
并且，在本发明的半导体器件中，优选搭载部具有多个切口部，所述搭载部具有如下形状：多个切口部的任意一个设置在关于所述搭载部的中心与其他切口部的任意一个对称的位置上。
该情况下，通过使切口部位于对称的位置上，不会使由于热膨胀系数差而产生的热应力向局部偏移，能够以均匀的强度在元件周围进行与搭载部和树脂基板的接合。
并且，在本发明的半导体器件中，优选搭载部是具有由曲线构成的切口部的形状。
该情况下，能够在切口部中抑制气泡卷入粘接剂中的情况，能够提高元件与树脂基板和搭载部的接合强度。
并且，在本发明的半导体器件中，优选在半导体元件为长方形的情况下，搭载部形成为切口部位于半导体元件中心和各边的中心的延长线上。即，优选搭载部是在半导体元件中心和半导体元件的角的延长线上不存在切口部的形状。
该情况下，粘接剂在半导体元件的底面中，与角相比从边的伸出量多，所以，通过切口部，粘接剂容易到达树脂基板上，能够提高接合强度，并且，能够抑制粘接剂爬上半导体元件的侧面。因为在没有切口部的情况下，粘接剂容易通过边爬上半导体元件的侧面。
而且，即使在以增加粘接剂和树脂基板的接触面积为目的而增加了粘接剂量的情况下，也能够抑制粘接剂爬上半导体元件的侧面。
并且，在本发明的半导体器件中，优选以包围搭载部的方式在所述树脂基板和所述导体图案的布线部上形成绝缘膜。特别地，在本发明的半导体器件中，优选在通过导电金属丝与设置在半导体元件的上表面上的电极电连接的导体图案的接线部和搭载部之间，在所述树脂基板和所述导体图案的布线部上形成绝缘膜。
该情况下，能够防止从搭载部扩展的粘接剂覆盖导体图案，能够防止由于粘接剂到达接线部而产生导电金属丝的连接不良等的不良情况。因此，使粘接剂的量和粘度的管理变得容易，能够容易地增加粘接剂量，能够增大接合强度。
根据本发明，能够提供可靠性高的半导体器件。
附图说明
图1是示出本发明的实施例的基板和导体图案的平面图。
图2是本发明的第一实施例的主要部分的俯视图。
图3是沿着上述图2的A-A’线的主要部分的剖面图。
图4是本发明的第二实施例的主要部分的俯视图。
图5是本发明的第三实施例的主要部分的俯视图。
图6是现有的半导体发光器件的立体图。
标号说明
1：树脂基板；2：导体图案；2a：搭载部；2b：接线部；2c：端子部；21a：切口部；3：半导体发光元件；4：将树脂作为基础材料的粘接剂；5：导电金属丝；6：密封树脂；7：保护膜；10：半导体发光器件。
具体实施方式
以下，参照图1～图3说明本发明的第一实施例。图1是示出本发明的实施例的基板和导体图案的平面图。图2是本发明的第一实施例的主要部分的俯视图，图3是沿着图2的A-A’线的剖面图。在图2中省略了粘接剂4的图示。
在形成于玻璃环氧基板1的表面上的导体图案2的搭载部2a上，通过将Ag粒子分散在环氧树脂中的导电性的粘接剂4安装有半导体发光元件3。半导体发光元件3与导体图案的一部分一起被由环氧树脂构成的密封树脂6覆盖。
导体图案2在铜箔上通过由Cu、Ni、Au构成的电镀层构成为总厚度约为30μm，并由正负的电极图案构成。导体图案2通过侧面形成在玻璃环氧基板1的安装有半导体发光元件3的面的相反侧的底面上，在底面上具有端子部2c，该端子部2c用于通过锡焊等向电路基板等进行装配。在以回流方式向装配基板进行锡焊来制造半导体发光装置的情况下，能够良好地使用形成在底面上的端子部2c。
半导体发光元件3大致为正方形，其一对电极设置在上表面和底面上，底面侧的电极通过导电性的粘接剂4与导体图案2的接线部2b电接合，上表面侧的电极通过由Au构成的导电金属丝5与导体图案2的接线部2b电接合。
搭载部2a具有在直径0.235mm的圆的外周设有4个切口部21a的形状。切口部21a使粘接剂4容易到达基板1。切口部21a是朝向圆的中心的凹陷，由曲线构成。通过由曲线构成，能够抑制切口部21a中气泡卷入到粘接剂4中的情况。
并且，搭载部2a具有从中心朝向外侧的突缘部22a，从上面观察，突缘部22a位于半导体发光元件的中心和角的延长线上，确保了散热性。
并且，搭载部2a具有如下形状：各切口部21a位于半导体元件中心和各边的中心的延长线上，有效地抑制了爬上半导体元件3的侧面。
在本实施例中，切口部21a形成在由分别以半导体发光元件中心和各边的中心的延长线与形成搭载部2a的外缘的一部分的圆的外周的4处交点为中心、直径0.07mm的弧和该圆所包围的部分上。这样，当一个切口部的最大宽度为元件搭载部的最大宽度的七分之一以上、八分之一以下时，能够确保树脂基板和粘接剂的接触区域，同时能够较小地形成搭载部，所以是优选的。
各切口部21a形成为，位于关于成为半导体元件3的中心位置的搭载部的中心23a与其他切口部21a中的任意一个对称的位置上，并以均匀的强度接合元件周围。
并且，各切口部21a形成在未到达设置于半导体发光元件3的底面上的电极的正下方的范围内。即，各切口部21a形成在搭载部中的与半导体元件底面的正下方对应的与半导体发光元件底面固定的固定区域的外侧。
这里，从防止剥离的方面看，优选导体图案2薄且形成区域小。这是因为，导体图案2和密封树脂6的剥离是由于导体图案2和密封树脂6的热膨胀系数差引起的，在回流方式的锡焊中，半导体发光器件10暴露于高温中。
但是，当在半导体发光元件底面的正下方存在切口部时，气泡的卷入和散热效果显著降低。当在粘接剂中存在气泡时，在回流方式的锡焊等高温环境下，由于气泡的膨胀，接合强度降低，半导体发光器件的可靠性降低。另外，散热效果的降低导致半导体发光元件的PN结部温度上升等，使半导体发光元件的光学特性降低。
即，通过使切口部21a形成在未到达设置于半导体发光元件3的底面上的电极的正下方的范围内，避免了粘接剂4在切口部21a中卷入气泡的问题，能够提供可靠性高的半导体发光器件10。
导电性粘接剂4以在搭载部2a以及在切口部21a中露出的玻璃环氧基板1上填充切口部21a的方式连续地形成。而且，至少在切口部21a中与树脂基板1接触，形成密合性比较高的树脂基板1和将树脂作为基础材料的粘接剂4的接触区域。特别地，通过在树脂基板1和粘接剂4中使用物性相近的环氧树脂，能够获得接合强度更高的半导体发光器件10。
接着，参照图4说明本发明的第二实施例。图4是本发明的第二实施例的主要部分的俯视图，省略了粘接剂4的图示。
本实施例的半导体器件的基本结构与第一实施例的半导体器件相同，所以，参照第一实施例而省略详细说明。
在本实施例的半导体发光器件中，半导体发光元件3大致为正方形，其一对电极设置在上表面，底面通过由热固化性环氧树脂构成的粘接剂4与导体图案的各个正负的电极图案电接合，两电极通过由Au构成的导电金属丝5与导体图案的各个正负的电极图案电接合。
接着，参照图5说明本发明的第三实施例。图5是本发明的第三实施例的主要部分的俯视图，省略了粘接剂4的图示。
本实施例的半导体器件的基本结构与第二实施例的半导体器件相同，所以，参照第一实施例而省略详细说明。
在本实施例的半导体发光器件中，玻璃环氧基板1和导体图案2由热固化性环氧树脂构成。绝缘保护膜7以包围搭载部的方式通过丝网印刷形成。该绝缘保护膜7使粘接剂4的量的管理变得容易。而且，能够增大粘接剂和玻璃环氧基板的接触面积，容易地提高接合强度。即使在粘接剂的粘度低的情况下，粘接剂4也扩展到导体图案2的接线部2b而覆盖接线部2b，能够防止导电金属丝5的连接不良。
在大约260℃的环境下以回流方式将上述第一实施例、第二实施例和第三实施例的半导体发光器件锡焊在装配基板上的半导体发光装置中，不会产生半导体发光元件从搭载部剥离而不点亮的不良情况。
另一方面，作为比较例，制作第一实施例的半导体发光器件中没有切口部的结构的半导体发光器件、并在大约260℃的环境下以回流方式将其锡焊在装配基板上的半导体发光装置中，半导体发光元件从搭载部剥离而不点亮的不良情况的产生率为2～3ppm。
另外，本发明的半导体发光器件不限于上述实施例，在不脱离本发明的主旨的范围内，当然可以施加各种变更。

Claims (5)

1.一种半导体器件，其特征在于，该半导体器件具有：
树脂基板；
导体图案，其形成在所述树脂基板上；以及
半导体元件，其通过将树脂作为基础材料的粘接剂安装在所述导体图案的元件搭载部上，
所述元件搭载部具有在与所述半导体元件底面固定的固定区域的外侧具有切口部的形状，所述切口部形成于未到达与所述半导体元件底面固定的固定区域的范围内，所述粘接剂在所述切口部中与树脂基板接触。
2.根据权利要求1所述的半导体器件，其特征在于，
所述搭载部是具有由曲线构成的切口部的形状。
3.根据权利要求1所述的半导体器件，其特征在于，
所述搭载部具有多个切口部，
所述搭载部具有如下形状：所述切口部的任意一个设置在关于所述搭载部的中心与其他切口部的任意一个对称的位置上。
4.根据权利要求3所述的半导体器件，其特征在于，
所述搭载部是具有由曲线构成的切口部的形状。
5.根据权利要求1～4中的任意一项所述的半导体器件，其特征在于，
所述半导体元件为长方形，
所述搭载部具有如下形状：所述切口部位于所述半导体元件中心和各边的中心的延长线上。
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