JP2005093578A - Iii族窒化物系化合物半導体素子 - Google Patents
Iii族窒化物系化合物半導体素子 Download PDFInfo
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- JP2005093578A JP2005093578A JP2003322541A JP2003322541A JP2005093578A JP 2005093578 A JP2005093578 A JP 2005093578A JP 2003322541 A JP2003322541 A JP 2003322541A JP 2003322541 A JP2003322541 A JP 2003322541A JP 2005093578 A JP2005093578 A JP 2005093578A
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- compound semiconductor
- group iii
- iii nitride
- intermediate layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 150000001875 compounds Chemical class 0.000 title abstract description 6
- 150000004767 nitrides Chemical class 0.000 title abstract description 6
- 239000012535 impurity Substances 0.000 claims abstract description 47
- -1 nitride compound Chemical class 0.000 claims description 31
- 238000009826 distribution Methods 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000011777 magnesium Substances 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 229910052749 magnesium Inorganic materials 0.000 claims description 13
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000004913 activation Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000005253 cladding Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Abstract
【解決手段】III族窒化物系化合物半導体素子100のアクセプタ不純物の添加されたp−AlGaN層107とp−GaN層109の間に中間層108を設ける。このとき、p−AlGaN層107を形成する際に用いられたアクセプタ不純物の、中間層108への混入によるホール発生を補償する濃度にドナー不純物を添加する。中間層108は極めて伝導度の低い層となり、III族窒化物系化合物半導体素子100の静電耐圧が著しく向上する。
【選択図】図1
Description
101:サファイヤ基板
102:バッファ層
103:ノンドープGaN層
104:高キャリア濃度n+層
105:n型クラッド層
106:発光層
107:p型クラッド層(第1のp層)
108:中間層
109:p型コンタクト層(第2のp層)
110:透光性薄膜p電極
120:p電極
130:保護膜
140:n電極
150:反射金属層
Claims (4)
- アクセプタ不純物の添加された第1のp層と第2のp層とを有するIII族窒化物系化合物半導体素子において、
前記第1のp層と前記第2のp層との間に中間層を有し、
前記中間層は、製造工程で混入されるアクセプタ不純物によるホール発生を略補償する濃度に、ドナー不純物が添加されていることを特徴とするIII族窒化物系化合物半導体素子。 - 前記中間層に添加されるドナー不純物は、前記アクセプタ不純物の前記中間層での濃度分布に対応した濃度分布で添加されることを特徴とする請求項1に記載のIII族窒化物系化合物半導体素子。
- 前記アクセプタ不純物はマグネシウム(Mg)であり、前記ドナー不純物はシリコン(Si)であることを特徴とする請求項1に記載のIII族窒化物系化合物半導体素子。
- 前記中間層におけるホール濃度が1017/cm3以下であることを特徴とする請求項1に記載のIII族窒化物系化合物半導体素子。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003322541A JP4292925B2 (ja) | 2003-09-16 | 2003-09-16 | Iii族窒化物系化合物半導体発光素子の製造方法 |
US10/542,780 US20060097283A1 (en) | 2003-09-16 | 2004-09-01 | Group III-nitride-based compound semiconductor device |
CNB2004800036968A CN100386895C (zh) | 2003-09-16 | 2004-09-01 | Ⅲ族氮化物基化合物半导体器件 |
PCT/JP2004/013082 WO2005029595A1 (en) | 2003-09-16 | 2004-09-01 | Group iii-nitride-based compound semiconductor device |
TW093127450A TWI242896B (en) | 2003-09-16 | 2004-09-10 | Group III-nitride-based compound semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003322541A JP4292925B2 (ja) | 2003-09-16 | 2003-09-16 | Iii族窒化物系化合物半導体発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005093578A true JP2005093578A (ja) | 2005-04-07 |
JP4292925B2 JP4292925B2 (ja) | 2009-07-08 |
Family
ID=34372699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003322541A Expired - Lifetime JP4292925B2 (ja) | 2003-09-16 | 2003-09-16 | Iii族窒化物系化合物半導体発光素子の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060097283A1 (ja) |
JP (1) | JP4292925B2 (ja) |
CN (1) | CN100386895C (ja) |
TW (1) | TWI242896B (ja) |
WO (1) | WO2005029595A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009088184A (ja) * | 2007-09-28 | 2009-04-23 | Yamatake Corp | 画像処理装置 |
US8389975B2 (en) | 2007-09-27 | 2013-03-05 | Showa Denko K.K. | Group III nitride semiconductor light-emitting device |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101263934B1 (ko) * | 2006-05-23 | 2013-05-10 | 엘지디스플레이 주식회사 | 발광다이오드 및 그의 제조방법 |
JP4172515B2 (ja) * | 2006-10-18 | 2008-10-29 | ソニー株式会社 | 発光素子の製造方法 |
DE102009004895A1 (de) | 2009-01-16 | 2010-07-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
TWI499099B (zh) | 2009-12-30 | 2015-09-01 | Epistar Corp | 具有保護層之半導體發光元件 |
CN103904173A (zh) * | 2014-03-24 | 2014-07-02 | 同辉电子科技股份有限公司 | 一种降低芯片正向工作电压的外延片生长方法 |
JP6229609B2 (ja) * | 2014-07-18 | 2017-11-15 | 豊田合成株式会社 | Iii族窒化物半導体発光素子の製造方法 |
CN109346573A (zh) * | 2018-09-21 | 2019-02-15 | 华灿光电(苏州)有限公司 | 一种氮化镓基发光二极管外延片及其制备方法 |
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JP2831667B2 (ja) * | 1988-12-14 | 1998-12-02 | 株式会社東芝 | 半導体レーザ装置及びその製造方法 |
US5578839A (en) * | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
DE69637304T2 (de) * | 1995-03-17 | 2008-08-07 | Toyoda Gosei Co., Ltd. | Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung |
US5970080A (en) * | 1996-03-07 | 1999-10-19 | Sharp Kabushiki Kaisha | Gallium nitride compound semiconductor light emitting element and method for fabricating the same |
JP3488597B2 (ja) * | 1997-07-14 | 2004-01-19 | 株式会社東芝 | 窒化ガリウム系化合物半導体装置 |
JP3822318B2 (ja) * | 1997-07-17 | 2006-09-20 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
US6841800B2 (en) * | 1997-12-26 | 2005-01-11 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device comprising a gallium-nitride-group compound-semiconductor |
US6445127B1 (en) * | 1998-02-17 | 2002-09-03 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device comprising gallium-nitride-group compound-semiconductor and method of manufacturing the same |
JP3763667B2 (ja) * | 1998-04-23 | 2006-04-05 | 株式会社東芝 | 半導体発光素子 |
US6657300B2 (en) * | 1998-06-05 | 2003-12-02 | Lumileds Lighting U.S., Llc | Formation of ohmic contacts in III-nitride light emitting devices |
US6838705B1 (en) * | 1999-03-29 | 2005-01-04 | Nichia Corporation | Nitride semiconductor device |
JP3567790B2 (ja) * | 1999-03-31 | 2004-09-22 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
JP2001053336A (ja) * | 1999-08-05 | 2001-02-23 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
JP2001085737A (ja) * | 1999-09-10 | 2001-03-30 | Sharp Corp | 窒化物半導体発光素子 |
JP2001119102A (ja) * | 1999-10-15 | 2001-04-27 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体レーザダイオード |
JP2001252374A (ja) * | 2000-03-09 | 2001-09-18 | Sumitomo Rubber Ind Ltd | マルチピースソリッドゴルフボール |
US6586762B2 (en) * | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
US20020104997A1 (en) * | 2001-02-05 | 2002-08-08 | Li-Hsin Kuo | Semiconductor light emitting diode on a misoriented substrate |
US6649942B2 (en) * | 2001-05-23 | 2003-11-18 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device |
JP3543809B2 (ja) * | 2001-07-04 | 2004-07-21 | 日亜化学工業株式会社 | 窒化物半導体素子 |
CN100377369C (zh) * | 2001-07-04 | 2008-03-26 | 日亚化学工业株式会社 | 氮化物半导体元件 |
JP4084620B2 (ja) * | 2001-09-27 | 2008-04-30 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
US6954478B2 (en) * | 2002-02-04 | 2005-10-11 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor laser device |
US6995401B2 (en) * | 2002-10-23 | 2006-02-07 | Shin-Etsu Handotai Co., Ltd. | Light emitting device and method of fabricating the same |
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CN101587932B (zh) * | 2004-03-31 | 2011-06-01 | 日亚化学工业株式会社 | 氮化物半导体发光元件 |
JP3833674B2 (ja) * | 2004-06-08 | 2006-10-18 | 松下電器産業株式会社 | 窒化物半導体レーザ素子 |
-
2003
- 2003-09-16 JP JP2003322541A patent/JP4292925B2/ja not_active Expired - Lifetime
-
2004
- 2004-09-01 WO PCT/JP2004/013082 patent/WO2005029595A1/en active Application Filing
- 2004-09-01 CN CNB2004800036968A patent/CN100386895C/zh active Active
- 2004-09-01 US US10/542,780 patent/US20060097283A1/en not_active Abandoned
- 2004-09-10 TW TW093127450A patent/TWI242896B/zh active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8389975B2 (en) | 2007-09-27 | 2013-03-05 | Showa Denko K.K. | Group III nitride semiconductor light-emitting device |
JP2009088184A (ja) * | 2007-09-28 | 2009-04-23 | Yamatake Corp | 画像処理装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2005029595A1 (en) | 2005-03-31 |
US20060097283A1 (en) | 2006-05-11 |
CN100386895C (zh) | 2008-05-07 |
TWI242896B (en) | 2005-11-01 |
CN1748324A (zh) | 2006-03-15 |
JP4292925B2 (ja) | 2009-07-08 |
TW200514283A (en) | 2005-04-16 |
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