JP2004536463A5 - - Google Patents

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Publication number
JP2004536463A5
JP2004536463A5 JP2003514971A JP2003514971A JP2004536463A5 JP 2004536463 A5 JP2004536463 A5 JP 2004536463A5 JP 2003514971 A JP2003514971 A JP 2003514971A JP 2003514971 A JP2003514971 A JP 2003514971A JP 2004536463 A5 JP2004536463 A5 JP 2004536463A5
Authority
JP
Japan
Prior art keywords
tantalum
layer
seed layer
copper
resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003514971A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004536463A (ja
JP4181035B2 (ja
Filing date
Publication date
Priority claimed from GB0117599A external-priority patent/GB0117599D0/en
Priority claimed from GB0201590A external-priority patent/GB0201590D0/en
Priority claimed from GB0206116A external-priority patent/GB0206116D0/en
Application filed filed Critical
Priority claimed from PCT/GB2002/003238 external-priority patent/WO2003008660A1/en
Publication of JP2004536463A publication Critical patent/JP2004536463A/ja
Publication of JP2004536463A5 publication Critical patent/JP2004536463A5/ja
Application granted granted Critical
Publication of JP4181035B2 publication Critical patent/JP4181035B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003514971A 2001-07-19 2002-07-15 タンタル膜の堆積 Expired - Fee Related JP4181035B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB0117599A GB0117599D0 (en) 2001-07-19 2001-07-19 Depositing a tantalum film
GB0201590A GB0201590D0 (en) 2002-01-24 2002-01-24 Depositing a tantalum film
GB0206116A GB0206116D0 (en) 2002-03-15 2002-03-15 Depositing a tantalum file
PCT/GB2002/003238 WO2003008660A1 (en) 2001-07-19 2002-07-15 Depositing a tantalum film

Publications (3)

Publication Number Publication Date
JP2004536463A JP2004536463A (ja) 2004-12-02
JP2004536463A5 true JP2004536463A5 (enExample) 2006-01-05
JP4181035B2 JP4181035B2 (ja) 2008-11-12

Family

ID=27256224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003514971A Expired - Fee Related JP4181035B2 (ja) 2001-07-19 2002-07-15 タンタル膜の堆積

Country Status (6)

Country Link
US (1) US7129161B2 (enExample)
JP (1) JP4181035B2 (enExample)
KR (1) KR20040015670A (enExample)
GB (1) GB2393189B (enExample)
TW (1) TWI294918B (enExample)
WO (1) WO2003008660A1 (enExample)

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US20170170215A1 (en) * 2015-12-15 2017-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with anti-acid layer and method for forming the same
CN108103463B (zh) * 2016-11-25 2022-01-14 中国科学院金属研究所 一种体心立方钽涂层的制备方法
FR3099490B1 (fr) * 2019-08-02 2022-12-02 X Fab France Procédé de formation d’un film de tantale à basse résistivité
CN111926289B (zh) * 2020-08-19 2022-10-21 重庆文理学院 一种钽涂层制备方法
CN115458675B (zh) * 2022-11-11 2023-04-18 阿里巴巴达摩院(杭州)科技有限公司 钽金属薄膜处理方法、量子器件及量子芯片

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