JP2004535066A5 - - Google Patents

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Publication number
JP2004535066A5
JP2004535066A5 JP2003511316A JP2003511316A JP2004535066A5 JP 2004535066 A5 JP2004535066 A5 JP 2004535066A5 JP 2003511316 A JP2003511316 A JP 2003511316A JP 2003511316 A JP2003511316 A JP 2003511316A JP 2004535066 A5 JP2004535066 A5 JP 2004535066A5
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JP
Japan
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region
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semiconductor
doped semiconductor
bulk
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JP2003511316A
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English (en)
Japanese (ja)
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JP2004535066A (ja
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Priority claimed from US09/935,776 external-priority patent/US20020130311A1/en
Priority claimed from US10/020,004 external-priority patent/US7129554B2/en
Application filed filed Critical
Priority claimed from PCT/US2002/016133 external-priority patent/WO2003005450A2/en
Publication of JP2004535066A publication Critical patent/JP2004535066A/ja
Publication of JP2004535066A5 publication Critical patent/JP2004535066A5/ja
Pending legal-status Critical Current

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JP2003511316A 2001-05-18 2002-05-20 ナノスケールワイヤ及び関連デバイス Pending JP2004535066A (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US29189601P 2001-05-18 2001-05-18
US29212101P 2001-05-18 2001-05-18
US29203501P 2001-05-18 2001-05-18
US29204501P 2001-05-18 2001-05-18
US09/935,776 US20020130311A1 (en) 2000-08-22 2001-08-22 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US34831301P 2001-11-09 2001-11-09
US10/020,004 US7129554B2 (en) 2000-12-11 2001-12-11 Nanosensors
US35464202P 2002-02-06 2002-02-06
PCT/US2002/016133 WO2003005450A2 (en) 2001-05-18 2002-05-20 Nanoscale wires and related devices

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008156094A Division JP2008300848A (ja) 2001-05-18 2008-06-16 ナノスケールワイヤ及び関連デバイス

Publications (2)

Publication Number Publication Date
JP2004535066A JP2004535066A (ja) 2004-11-18
JP2004535066A5 true JP2004535066A5 (https=) 2005-12-22

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ID=27574044

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003511316A Pending JP2004535066A (ja) 2001-05-18 2002-05-20 ナノスケールワイヤ及び関連デバイス
JP2008156094A Pending JP2008300848A (ja) 2001-05-18 2008-06-16 ナノスケールワイヤ及び関連デバイス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008156094A Pending JP2008300848A (ja) 2001-05-18 2008-06-16 ナノスケールワイヤ及び関連デバイス

Country Status (4)

Country Link
EP (1) EP1436841A1 (https=)
JP (2) JP2004535066A (https=)
CA (1) CA2447728A1 (https=)
WO (1) WO2003005450A2 (https=)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU8664901A (en) 2000-08-22 2002-03-04 Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
ATE408140T1 (de) 2000-12-11 2008-09-15 Harvard College Vorrichtung enthaltend nanosensoren zur ekennung eines analyten und verfahren zu ihrer herstellung
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
WO2004010552A1 (en) * 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
AU2003298998A1 (en) 2002-09-05 2004-04-08 Nanosys, Inc. Oriented nanostructures and methods of preparing
US7491428B2 (en) 2002-12-04 2009-02-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Controlled deposition and alignment of carbon nanotubes
US7730547B2 (en) 2003-01-23 2010-06-01 William Marsh Rice University Smart materials: strain sensing and stress determination by means of nanotube sensing systems, composites, and devices
WO2004088755A1 (en) 2003-04-04 2004-10-14 Startskottet 22286 Ab Nanowhiskers with pn junctions and methods of fabricating thereof
CN1829654B (zh) 2003-04-04 2013-04-17 库纳诺公司 精确定位的纳米晶须和纳米晶须阵列及其制备方法
US7910064B2 (en) 2003-06-03 2011-03-22 Nanosys, Inc. Nanowire-based sensor configurations
US7026432B2 (en) 2003-08-12 2006-04-11 General Electric Company Electrically conductive compositions and method of manufacture thereof
US7354988B2 (en) 2003-08-12 2008-04-08 General Electric Company Electrically conductive compositions and method of manufacture thereof
US7309727B2 (en) 2003-09-29 2007-12-18 General Electric Company Conductive thermoplastic compositions, methods of manufacture and articles derived from such compositions
WO2005045946A1 (ja) * 2003-11-10 2005-05-19 Matsushita Electric Industrial Co., Ltd. 電子機能材料の配向処理方法と薄膜トランジスタ
KR20050055456A (ko) * 2003-12-08 2005-06-13 학교법인 포항공과대학교 산화아연계 나노막대를 이용한 바이오센서 및 이의 제조방법
US7354850B2 (en) 2004-02-06 2008-04-08 Qunano Ab Directionally controlled growth of nanowhiskers
AU2005219894A1 (en) * 2004-03-02 2005-09-15 The University Of Melbourne A photon source
KR100584188B1 (ko) * 2004-03-08 2006-05-29 한국과학기술연구원 나노선 광센서 및 이를 포함하는 키트
US7057881B2 (en) * 2004-03-18 2006-06-06 Nanosys, Inc Nanofiber surface based capacitors
CA2564220A1 (en) * 2004-04-30 2005-12-15 Nanosys, Inc. Systems and methods for nanowire growth and harvesting
WO2006000790A1 (en) 2004-06-25 2006-01-05 Btg International Limited Formation of nanowhiskers on a substrate of dissimilar material
US7194912B2 (en) 2004-07-13 2007-03-27 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube-based sensor and method for continually sensing changes in a structure
JP2008523590A (ja) 2004-12-06 2008-07-03 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ ナノスケールワイヤベースのデータ格納装置
US7462656B2 (en) 2005-02-15 2008-12-09 Sabic Innovative Plastics Ip B.V. Electrically conductive compositions and method of manufacture thereof
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
US7278324B2 (en) 2005-06-15 2007-10-09 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube-based sensor and method for detection of crack growth in a structure
JP4831659B2 (ja) * 2005-09-02 2011-12-07 独立行政法人産業技術総合研究所 情報記録素子
US7826336B2 (en) 2006-02-23 2010-11-02 Qunano Ab Data storage nanostructures
CA2655340C (en) 2006-06-12 2016-10-25 President And Fellows Of Harvard College Nanosensors and related technologies
US7718995B2 (en) 2006-06-20 2010-05-18 Panasonic Corporation Nanowire, method for fabricating the same, and device having nanowires
WO2007148653A1 (ja) 2006-06-21 2007-12-27 Panasonic Corporation 電界効果トランジスタ
WO2008033303A2 (en) 2006-09-11 2008-03-20 President And Fellows Of Harvard College Branched nanoscale wires
WO2008127314A1 (en) 2006-11-22 2008-10-23 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
JP4167718B2 (ja) 2006-12-13 2008-10-22 松下電器産業株式会社 ナノワイヤ及びナノワイヤを備える装置並びにそれらの製造方法
US8049203B2 (en) 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such
EP2091862B1 (en) 2006-12-22 2019-12-11 QuNano AB Elevated led and method of producing such
JP5453105B2 (ja) 2006-12-22 2014-03-26 クナノ アーベー ナノ構造のled及びデバイス
US8183587B2 (en) 2006-12-22 2012-05-22 Qunano Ab LED with upstanding nanowire structure and method of producing such
JP2008209249A (ja) * 2007-02-27 2008-09-11 National Institutes Of Natural Sciences 酸素ガス検出素子、及び酸素ガス検出素子用ナノワイヤ
US8143144B2 (en) 2007-06-06 2012-03-27 Panasonic Corporation Semiconductor nanowire and its manufacturing method
JP2010538464A (ja) 2007-08-28 2010-12-09 カリフォルニア インスティテュート オブ テクノロジー ポリマ埋め込み型半導体ロッドアレイ
JP2008120674A (ja) * 2007-10-18 2008-05-29 National Institute For Materials Science 硫化亜鉛ナノケーブル
US7915146B2 (en) 2007-10-23 2011-03-29 International Business Machines Corporation Controlled doping of semiconductor nanowires
US8390005B2 (en) 2008-06-30 2013-03-05 Hewlett-Packard Development Company, L.P. Apparatus and method for nanowire optical emission
JP4923003B2 (ja) * 2008-07-17 2012-04-25 日本電信電話株式会社 ナノワイヤ作製方法、ナノワイヤ素子及びナノワイヤ構造物
JP2012528020A (ja) 2009-05-26 2012-11-12 ナノシス・インク. ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム
WO2011038228A1 (en) 2009-09-24 2011-03-31 President And Fellows Of Harvard College Bent nanowires and related probing of species
WO2011066570A2 (en) 2009-11-30 2011-06-03 California Institute Of Technology Semiconductor wire array structures, and solar cells and photodetectors based on such structures
JP5127856B2 (ja) * 2010-03-15 2013-01-23 株式会社東芝 半導体記憶装置
WO2011156042A2 (en) 2010-03-23 2011-12-15 California Institute Of Technology Heterojunction wire array solar cells
KR101176400B1 (ko) * 2010-05-28 2012-08-23 세키스이가가쿠 고교가부시키가이샤 편광성 재료 및 그것을 포함하는 편광막 제조용 도료 그리고 편광막
KR101927116B1 (ko) * 2011-10-31 2018-12-11 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR101927115B1 (ko) * 2011-10-31 2018-12-11 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR101927206B1 (ko) * 2011-11-28 2019-03-12 엘지디스플레이 주식회사 퀀텀 로드 발광 표시소자
KR102011900B1 (ko) * 2011-11-28 2019-08-20 엘지디스플레이 주식회사 가전제품의 외면에 부착되는 장식부재
KR101957270B1 (ko) * 2011-11-30 2019-03-13 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
US8687978B2 (en) 2011-12-13 2014-04-01 The Boeing Company Optical nanowire antenna with directional transmission
US8744272B1 (en) 2011-12-13 2014-06-03 The Boeing Company Scanning optical nanowire antenna
US8774636B2 (en) * 2011-12-13 2014-07-08 The Boeing Company Nanowire antenna
US10026560B2 (en) 2012-01-13 2018-07-17 The California Institute Of Technology Solar fuels generator
WO2013106793A1 (en) 2012-01-13 2013-07-18 California Institute Of Technology Solar fuel generators
US9476129B2 (en) 2012-04-02 2016-10-25 California Institute Of Technology Solar fuels generator
WO2013126432A1 (en) 2012-02-21 2013-08-29 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
US9947816B2 (en) 2012-04-03 2018-04-17 California Institute Of Technology Semiconductor structures for fuel generation
US9195787B2 (en) 2012-11-20 2015-11-24 Intel Corporation Methods and apparatus for modeling and simulating spintronic integrated circuits
US9553223B2 (en) 2013-01-24 2017-01-24 California Institute Of Technology Method for alignment of microwires
KR101989414B1 (ko) * 2018-01-02 2019-06-14 울산과학기술원 블록공중합체를 이용한 마이크로패턴 내부에 정렬된 금속 나노선 및 이의 제조방법
CN113782674B (zh) * 2020-06-09 2024-02-27 北京元芯碳基集成电路研究院 碳纳米管射频器件、制造方法及集成电路系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3243303B2 (ja) * 1991-10-28 2002-01-07 ゼロックス・コーポレーション 量子閉じ込め半導体発光素子及びその製造方法
JP2904090B2 (ja) * 1996-01-10 1999-06-14 日本電気株式会社 単一電子素子
GB2338592A (en) * 1998-06-19 1999-12-22 Secr Defence Single electron transistor
JP3754568B2 (ja) * 1999-01-29 2006-03-15 シャープ株式会社 量子細線の製造方法
DE60044238D1 (de) * 1999-02-22 2010-06-02 Clawson Joseph E Elektronisches bauteil auf basis von nanostrukturen
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6322713B1 (en) * 1999-07-15 2001-11-27 Agere Systems Guardian Corp. Nanoscale conductive connectors and method for making same
US6286226B1 (en) * 1999-09-24 2001-09-11 Agere Systems Guardian Corp. Tactile sensor comprising nanowires and method for making the same
JP4807920B2 (ja) 2000-06-30 2011-11-02 アルフレッサファーマ株式会社 総ホモシステイン測定方法
AU8664901A (en) 2000-08-22 2002-03-04 Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US6512119B2 (en) * 2001-01-12 2003-01-28 Hewlett-Packard Company Bistable molecular mechanical devices with an appended rotor activated by an electric field for electronic switching, gating and memory applications
CA2442985C (en) * 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

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