JP2004535066A - ナノスケールワイヤ及び関連デバイス - Google Patents

ナノスケールワイヤ及び関連デバイス Download PDF

Info

Publication number
JP2004535066A
JP2004535066A JP2003511316A JP2003511316A JP2004535066A JP 2004535066 A JP2004535066 A JP 2004535066A JP 2003511316 A JP2003511316 A JP 2003511316A JP 2003511316 A JP2003511316 A JP 2003511316A JP 2004535066 A JP2004535066 A JP 2004535066A
Authority
JP
Japan
Prior art keywords
semiconductor
article
doped
wire
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003511316A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004535066A5 (https=
Inventor
リーバー，チャールズ・エム
デュアン，シャンフェン
クイ，イ
フアン，ユ
グディクセン，マーク・エス
ラウホン，リンカーン・ジェイ
ウォン，ジャンファン
パーク，ホンクン
ウェイ，チンチャオ
リャン，ウェンジー
スミス，デーヴィッド・シー
ウォン，デリ
チョン，チャオフイ
Original Assignee
プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ
ユニバーシティ・オブ・サザンプトン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/935,776 external-priority patent/US20020130311A1/en
Priority claimed from US10/020,004 external-priority patent/US7129554B2/en
Application filed by プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ, ユニバーシティ・オブ・サザンプトン filed Critical プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ
Publication of JP2004535066A publication Critical patent/JP2004535066A/ja
Publication of JP2004535066A5 publication Critical patent/JP2004535066A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/54366—Apparatus specially adapted for solid-phase testing
    • G01N33/54373—Apparatus specially adapted for solid-phase testing involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0019—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising bio-molecules
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/123—Nanowire, nanosheet or nanotube semiconductor bodies comprising junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4462—Carbon or carbon-containing materials, e.g. graphene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • General Physics & Mathematics (AREA)
  • Biomedical Technology (AREA)
  • Biochemistry (AREA)
  • Urology & Nephrology (AREA)
  • Hematology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Biotechnology (AREA)
  • Cell Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microbiology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2003511316A 2001-05-18 2002-05-20 ナノスケールワイヤ及び関連デバイス Pending JP2004535066A (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US29189601P 2001-05-18 2001-05-18
US29212101P 2001-05-18 2001-05-18
US29203501P 2001-05-18 2001-05-18
US29204501P 2001-05-18 2001-05-18
US09/935,776 US20020130311A1 (en) 2000-08-22 2001-08-22 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US34831301P 2001-11-09 2001-11-09
US10/020,004 US7129554B2 (en) 2000-12-11 2001-12-11 Nanosensors
US35464202P 2002-02-06 2002-02-06
PCT/US2002/016133 WO2003005450A2 (en) 2001-05-18 2002-05-20 Nanoscale wires and related devices

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008156094A Division JP2008300848A (ja) 2001-05-18 2008-06-16 ナノスケールワイヤ及び関連デバイス

Publications (2)

Publication Number Publication Date
JP2004535066A true JP2004535066A (ja) 2004-11-18
JP2004535066A5 JP2004535066A5 (https=) 2005-12-22

Family

ID=27574044

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003511316A Pending JP2004535066A (ja) 2001-05-18 2002-05-20 ナノスケールワイヤ及び関連デバイス
JP2008156094A Pending JP2008300848A (ja) 2001-05-18 2008-06-16 ナノスケールワイヤ及び関連デバイス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008156094A Pending JP2008300848A (ja) 2001-05-18 2008-06-16 ナノスケールワイヤ及び関連デバイス

Country Status (4)

Country Link
EP (1) EP1436841A1 (https=)
JP (2) JP2004535066A (https=)
CA (1) CA2447728A1 (https=)
WO (1) WO2003005450A2 (https=)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073556A (ja) * 2005-09-02 2007-03-22 National Institute Of Advanced Industrial & Technology 情報記録素子
WO2008105119A1 (ja) * 2007-02-27 2008-09-04 Inter-University Research Institute Corporation, National Institutes Of Natural Sciences 酸素ガス検出素子、及び酸素ガス検出素子用ナノワイヤ
WO2008149548A1 (ja) * 2007-06-06 2008-12-11 Panasonic Corporation 半導体ナノワイヤおよびその製造方法
JP2010024081A (ja) * 2008-07-17 2010-02-04 Nippon Telegr & Teleph Corp <Ntt> ナノワイヤ作製方法、ナノワイヤ素子及びナノワイヤ構造物
JP2011192787A (ja) * 2010-03-15 2011-09-29 Toshiba Corp 半導体記憶装置
US8198622B2 (en) 2006-12-13 2012-06-12 Panasonic Corporation Nanowire, device comprising nanowire, and their production methods
JP2012128401A (ja) * 2010-05-28 2012-07-05 Sekisui Chem Co Ltd 偏光性材料及びそれを含む偏光膜製造用塗料並びに偏光膜
KR20130047199A (ko) * 2011-10-31 2013-05-08 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR20130047198A (ko) * 2011-10-31 2013-05-08 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR20130059223A (ko) * 2011-11-28 2013-06-05 엘지디스플레이 주식회사 가전제품의 외면에 부착되는 장식부재
KR20130059221A (ko) * 2011-11-28 2013-06-05 엘지디스플레이 주식회사 퀀텀 로드 발광 표시소자
KR20130060473A (ko) * 2011-11-30 2013-06-10 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU8664901A (en) 2000-08-22 2002-03-04 Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
ATE408140T1 (de) 2000-12-11 2008-09-15 Harvard College Vorrichtung enthaltend nanosensoren zur ekennung eines analyten und verfahren zu ihrer herstellung
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
WO2004010552A1 (en) * 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
AU2003298998A1 (en) 2002-09-05 2004-04-08 Nanosys, Inc. Oriented nanostructures and methods of preparing
US7491428B2 (en) 2002-12-04 2009-02-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Controlled deposition and alignment of carbon nanotubes
US7730547B2 (en) 2003-01-23 2010-06-01 William Marsh Rice University Smart materials: strain sensing and stress determination by means of nanotube sensing systems, composites, and devices
WO2004088755A1 (en) 2003-04-04 2004-10-14 Startskottet 22286 Ab Nanowhiskers with pn junctions and methods of fabricating thereof
CN1829654B (zh) 2003-04-04 2013-04-17 库纳诺公司 精确定位的纳米晶须和纳米晶须阵列及其制备方法
US7910064B2 (en) 2003-06-03 2011-03-22 Nanosys, Inc. Nanowire-based sensor configurations
US7026432B2 (en) 2003-08-12 2006-04-11 General Electric Company Electrically conductive compositions and method of manufacture thereof
US7354988B2 (en) 2003-08-12 2008-04-08 General Electric Company Electrically conductive compositions and method of manufacture thereof
US7309727B2 (en) 2003-09-29 2007-12-18 General Electric Company Conductive thermoplastic compositions, methods of manufacture and articles derived from such compositions
WO2005045946A1 (ja) * 2003-11-10 2005-05-19 Matsushita Electric Industrial Co., Ltd. 電子機能材料の配向処理方法と薄膜トランジスタ
KR20050055456A (ko) * 2003-12-08 2005-06-13 학교법인 포항공과대학교 산화아연계 나노막대를 이용한 바이오센서 및 이의 제조방법
US7354850B2 (en) 2004-02-06 2008-04-08 Qunano Ab Directionally controlled growth of nanowhiskers
AU2005219894A1 (en) * 2004-03-02 2005-09-15 The University Of Melbourne A photon source
KR100584188B1 (ko) * 2004-03-08 2006-05-29 한국과학기술연구원 나노선 광센서 및 이를 포함하는 키트
US7057881B2 (en) * 2004-03-18 2006-06-06 Nanosys, Inc Nanofiber surface based capacitors
CA2564220A1 (en) * 2004-04-30 2005-12-15 Nanosys, Inc. Systems and methods for nanowire growth and harvesting
WO2006000790A1 (en) 2004-06-25 2006-01-05 Btg International Limited Formation of nanowhiskers on a substrate of dissimilar material
US7194912B2 (en) 2004-07-13 2007-03-27 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube-based sensor and method for continually sensing changes in a structure
JP2008523590A (ja) 2004-12-06 2008-07-03 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ ナノスケールワイヤベースのデータ格納装置
US7462656B2 (en) 2005-02-15 2008-12-09 Sabic Innovative Plastics Ip B.V. Electrically conductive compositions and method of manufacture thereof
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
US7278324B2 (en) 2005-06-15 2007-10-09 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube-based sensor and method for detection of crack growth in a structure
US7826336B2 (en) 2006-02-23 2010-11-02 Qunano Ab Data storage nanostructures
CA2655340C (en) 2006-06-12 2016-10-25 President And Fellows Of Harvard College Nanosensors and related technologies
US7718995B2 (en) 2006-06-20 2010-05-18 Panasonic Corporation Nanowire, method for fabricating the same, and device having nanowires
WO2007148653A1 (ja) 2006-06-21 2007-12-27 Panasonic Corporation 電界効果トランジスタ
WO2008033303A2 (en) 2006-09-11 2008-03-20 President And Fellows Of Harvard College Branched nanoscale wires
WO2008127314A1 (en) 2006-11-22 2008-10-23 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
US8049203B2 (en) 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such
EP2091862B1 (en) 2006-12-22 2019-12-11 QuNano AB Elevated led and method of producing such
JP5453105B2 (ja) 2006-12-22 2014-03-26 クナノ アーベー ナノ構造のｌｅｄ及びデバイス
US8183587B2 (en) 2006-12-22 2012-05-22 Qunano Ab LED with upstanding nanowire structure and method of producing such
JP2010538464A (ja) 2007-08-28 2010-12-09 カリフォルニア インスティテュート オブ テクノロジー ポリマ埋め込み型半導体ロッドアレイ
JP2008120674A (ja) * 2007-10-18 2008-05-29 National Institute For Materials Science 硫化亜鉛ナノケーブル
US7915146B2 (en) 2007-10-23 2011-03-29 International Business Machines Corporation Controlled doping of semiconductor nanowires
US8390005B2 (en) 2008-06-30 2013-03-05 Hewlett-Packard Development Company, L.P. Apparatus and method for nanowire optical emission
JP2012528020A (ja) 2009-05-26 2012-11-12 ナノシス・インク． ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム
WO2011038228A1 (en) 2009-09-24 2011-03-31 President And Fellows Of Harvard College Bent nanowires and related probing of species
WO2011066570A2 (en) 2009-11-30 2011-06-03 California Institute Of Technology Semiconductor wire array structures, and solar cells and photodetectors based on such structures
WO2011156042A2 (en) 2010-03-23 2011-12-15 California Institute Of Technology Heterojunction wire array solar cells
US8687978B2 (en) 2011-12-13 2014-04-01 The Boeing Company Optical nanowire antenna with directional transmission
US8744272B1 (en) 2011-12-13 2014-06-03 The Boeing Company Scanning optical nanowire antenna
US8774636B2 (en) * 2011-12-13 2014-07-08 The Boeing Company Nanowire antenna
US10026560B2 (en) 2012-01-13 2018-07-17 The California Institute Of Technology Solar fuels generator
WO2013106793A1 (en) 2012-01-13 2013-07-18 California Institute Of Technology Solar fuel generators
US9476129B2 (en) 2012-04-02 2016-10-25 California Institute Of Technology Solar fuels generator
WO2013126432A1 (en) 2012-02-21 2013-08-29 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
US9947816B2 (en) 2012-04-03 2018-04-17 California Institute Of Technology Semiconductor structures for fuel generation
US9195787B2 (en) 2012-11-20 2015-11-24 Intel Corporation Methods and apparatus for modeling and simulating spintronic integrated circuits
US9553223B2 (en) 2013-01-24 2017-01-24 California Institute Of Technology Method for alignment of microwires
KR101989414B1 (ko) * 2018-01-02 2019-06-14 울산과학기술원 블록공중합체를 이용한 마이크로패턴 내부에 정렬된 금속 나노선 및 이의 제조방법
CN113782674B (zh) * 2020-06-09 2024-02-27 北京元芯碳基集成电路研究院 碳纳米管射频器件、制造方法及集成电路系统

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09191104A (ja) * 1996-01-10 1997-07-22 Nec Corp 単一電子素子
JP2000223691A (ja) * 1999-01-29 2000-08-11 Sharp Corp 量子細線の製造方法および半導体素子
WO2000051186A1 (en) * 1999-02-22 2000-08-31 Clawson Joseph E Jr Nanostructure device and apparatus
JP2001102381A (ja) * 1999-07-15 2001-04-13 Lucent Technol Inc ナノスケール導電性コネクタの製造方法
JP2004532133A (ja) * 2001-03-30 2004-10-21 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア ナノ構造及びナノワイヤーの組立方法並びにそれらから組立てられた装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3243303B2 (ja) * 1991-10-28 2002-01-07 ゼロックス・コーポレーション 量子閉じ込め半導体発光素子及びその製造方法
GB2338592A (en) * 1998-06-19 1999-12-22 Secr Defence Single electron transistor
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6286226B1 (en) * 1999-09-24 2001-09-11 Agere Systems Guardian Corp. Tactile sensor comprising nanowires and method for making the same
JP4807920B2 (ja) 2000-06-30 2011-11-02 アルフレッサファーマ株式会社 総ホモシステイン測定方法
AU8664901A (en) 2000-08-22 2002-03-04 Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US6512119B2 (en) * 2001-01-12 2003-01-28 Hewlett-Packard Company Bistable molecular mechanical devices with an appended rotor activated by an electric field for electronic switching, gating and memory applications

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09191104A (ja) * 1996-01-10 1997-07-22 Nec Corp 単一電子素子
JP2000223691A (ja) * 1999-01-29 2000-08-11 Sharp Corp 量子細線の製造方法および半導体素子
WO2000051186A1 (en) * 1999-02-22 2000-08-31 Clawson Joseph E Jr Nanostructure device and apparatus
JP2001102381A (ja) * 1999-07-15 2001-04-13 Lucent Technol Inc ナノスケール導電性コネクタの製造方法
JP2004532133A (ja) * 2001-03-30 2004-10-21 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア ナノ構造及びナノワイヤーの組立方法並びにそれらから組立てられた装置

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073556A (ja) * 2005-09-02 2007-03-22 National Institute Of Advanced Industrial & Technology 情報記録素子
US8198622B2 (en) 2006-12-13 2012-06-12 Panasonic Corporation Nanowire, device comprising nanowire, and their production methods
WO2008105119A1 (ja) * 2007-02-27 2008-09-04 Inter-University Research Institute Corporation, National Institutes Of Natural Sciences 酸素ガス検出素子、及び酸素ガス検出素子用ナノワイヤ
WO2008149548A1 (ja) * 2007-06-06 2008-12-11 Panasonic Corporation 半導体ナノワイヤおよびその製造方法
US8143144B2 (en) 2007-06-06 2012-03-27 Panasonic Corporation Semiconductor nanowire and its manufacturing method
JP2010024081A (ja) * 2008-07-17 2010-02-04 Nippon Telegr & Teleph Corp <Ntt> ナノワイヤ作製方法、ナノワイヤ素子及びナノワイヤ構造物
US8390066B2 (en) 2010-03-15 2013-03-05 Kabushiki Kaisha Toshiba Semiconductor nanowire memory device
JP2011192787A (ja) * 2010-03-15 2011-09-29 Toshiba Corp 半導体記憶装置
JP2012128401A (ja) * 2010-05-28 2012-07-05 Sekisui Chem Co Ltd 偏光性材料及びそれを含む偏光膜製造用塗料並びに偏光膜
KR20130047199A (ko) * 2011-10-31 2013-05-08 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR20130047198A (ko) * 2011-10-31 2013-05-08 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR101927115B1 (ko) * 2011-10-31 2018-12-11 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR20130059223A (ko) * 2011-11-28 2013-06-05 엘지디스플레이 주식회사 가전제품의 외면에 부착되는 장식부재
KR20130059221A (ko) * 2011-11-28 2013-06-05 엘지디스플레이 주식회사 퀀텀 로드 발광 표시소자
KR101927206B1 (ko) 2011-11-28 2019-03-12 엘지디스플레이 주식회사 퀀텀 로드 발광 표시소자
KR102011900B1 (ko) * 2011-11-28 2019-08-20 엘지디스플레이 주식회사 가전제품의 외면에 부착되는 장식부재
KR20130060473A (ko) * 2011-11-30 2013-06-10 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR101957270B1 (ko) 2011-11-30 2019-03-13 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치

Also Published As

Publication number Publication date
WO2003005450A9 (en) 2003-10-16
EP1436841A1 (en) 2004-07-14
JP2008300848A (ja) 2008-12-11
CA2447728A1 (en) 2003-01-16
WO2003005450A2 (en) 2003-01-16

Similar Documents

Publication Publication Date Title
US7301199B2 (en) Nanoscale wires and related devices
JP2004535066A (ja) ナノスケールワイヤ及び関連デバイス
US20100155698A1 (en) Nanoscale wires and related devices
CN100565783C (zh) 包括至少四条半导体纳米线的电器件
AU2007211919B2 (en) Nanoscale wires and related devices
CN1996613A (zh) 搀杂的细长半导体,这类半导体的生长，包含这类半导体的器件以及这类器件的制造
AU2002324426B2 (en) Nanoscale wires and related devices
AU2007202897B2 (en) Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
AU2002324426A1 (en) Nanoscale wires and related devices

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20050624

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20050624

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080207

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080502

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20080513

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080609

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080616

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20080616

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20081107

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090309

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090309

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20090407

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20090522