CA2447728A1 - Nanoscale wires and related devices - Google Patents

Nanoscale wires and related devices Download PDF

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Publication number
CA2447728A1
CA2447728A1 CA002447728A CA2447728A CA2447728A1 CA 2447728 A1 CA2447728 A1 CA 2447728A1 CA 002447728 A CA002447728 A CA 002447728A CA 2447728 A CA2447728 A CA 2447728A CA 2447728 A1 CA2447728 A1 CA 2447728A1
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CA
Canada
Prior art keywords
semiconductor
article
doped
wire
nanoscopic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002447728A
Other languages
English (en)
French (fr)
Inventor
Charles M. Lieber
Xiangfeng Duan
Yi Cui
Yu Huang
Mark S. Gudiksen
Lincoln J. Lauhon
Jiangfang Wang
Hongkun Park
Qingqiao Wei
Wenjie Liang
David C. Smith
Deli Wang
Zhaohui Zhong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harvard University
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/935,776 external-priority patent/US20020130311A1/en
Priority claimed from US10/020,004 external-priority patent/US7129554B2/en
Application filed by Individual filed Critical Individual
Publication of CA2447728A1 publication Critical patent/CA2447728A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/54366—Apparatus specially adapted for solid-phase testing
    • G01N33/54373—Apparatus specially adapted for solid-phase testing involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0019—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising bio-molecules
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/123—Nanowire, nanosheet or nanotube semiconductor bodies comprising junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4462—Carbon or carbon-containing materials, e.g. graphene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • General Physics & Mathematics (AREA)
  • Biomedical Technology (AREA)
  • Biochemistry (AREA)
  • Urology & Nephrology (AREA)
  • Hematology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Biotechnology (AREA)
  • Cell Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microbiology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
CA002447728A 2001-05-18 2002-05-20 Nanoscale wires and related devices Abandoned CA2447728A1 (en)

Applications Claiming Priority (17)

Application Number Priority Date Filing Date Title
US29204501P 2001-05-18 2001-05-18
US29189601P 2001-05-18 2001-05-18
US29212101P 2001-05-18 2001-05-18
US29203501P 2001-05-18 2001-05-18
US60/292,045 2001-05-18
US60/292,035 2001-05-18
US60/291,896 2001-05-18
US60/292,121 2001-05-18
US09/935,776 US20020130311A1 (en) 2000-08-22 2001-08-22 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US09/935,776 2001-08-22
US34831301P 2001-11-09 2001-11-09
US60/348,313 2001-11-09
US10/020,004 US7129554B2 (en) 2000-12-11 2001-12-11 Nanosensors
US10/020,004 2001-12-11
US35464202P 2002-02-06 2002-02-06
US60/354,642 2002-02-06
PCT/US2002/016133 WO2003005450A2 (en) 2001-05-18 2002-05-20 Nanoscale wires and related devices

Publications (1)

Publication Number Publication Date
CA2447728A1 true CA2447728A1 (en) 2003-01-16

Family

ID=27574044

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002447728A Abandoned CA2447728A1 (en) 2001-05-18 2002-05-20 Nanoscale wires and related devices

Country Status (4)

Country Link
EP (1) EP1436841A1 (https=)
JP (2) JP2004535066A (https=)
CA (1) CA2447728A1 (https=)
WO (1) WO2003005450A2 (https=)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU8664901A (en) 2000-08-22 2002-03-04 Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
ATE408140T1 (de) 2000-12-11 2008-09-15 Harvard College Vorrichtung enthaltend nanosensoren zur ekennung eines analyten und verfahren zu ihrer herstellung
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
WO2004010552A1 (en) * 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
AU2003298998A1 (en) 2002-09-05 2004-04-08 Nanosys, Inc. Oriented nanostructures and methods of preparing
US7491428B2 (en) 2002-12-04 2009-02-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Controlled deposition and alignment of carbon nanotubes
US7730547B2 (en) 2003-01-23 2010-06-01 William Marsh Rice University Smart materials: strain sensing and stress determination by means of nanotube sensing systems, composites, and devices
WO2004088755A1 (en) 2003-04-04 2004-10-14 Startskottet 22286 Ab Nanowhiskers with pn junctions and methods of fabricating thereof
CN1829654B (zh) 2003-04-04 2013-04-17 库纳诺公司 精确定位的纳米晶须和纳米晶须阵列及其制备方法
US7910064B2 (en) 2003-06-03 2011-03-22 Nanosys, Inc. Nanowire-based sensor configurations
US7026432B2 (en) 2003-08-12 2006-04-11 General Electric Company Electrically conductive compositions and method of manufacture thereof
US7354988B2 (en) 2003-08-12 2008-04-08 General Electric Company Electrically conductive compositions and method of manufacture thereof
US7309727B2 (en) 2003-09-29 2007-12-18 General Electric Company Conductive thermoplastic compositions, methods of manufacture and articles derived from such compositions
WO2005045946A1 (ja) * 2003-11-10 2005-05-19 Matsushita Electric Industrial Co., Ltd. 電子機能材料の配向処理方法と薄膜トランジスタ
KR20050055456A (ko) * 2003-12-08 2005-06-13 학교법인 포항공과대학교 산화아연계 나노막대를 이용한 바이오센서 및 이의 제조방법
US7354850B2 (en) 2004-02-06 2008-04-08 Qunano Ab Directionally controlled growth of nanowhiskers
AU2005219894A1 (en) * 2004-03-02 2005-09-15 The University Of Melbourne A photon source
KR100584188B1 (ko) * 2004-03-08 2006-05-29 한국과학기술연구원 나노선 광센서 및 이를 포함하는 키트
US7057881B2 (en) * 2004-03-18 2006-06-06 Nanosys, Inc Nanofiber surface based capacitors
CA2564220A1 (en) * 2004-04-30 2005-12-15 Nanosys, Inc. Systems and methods for nanowire growth and harvesting
WO2006000790A1 (en) 2004-06-25 2006-01-05 Btg International Limited Formation of nanowhiskers on a substrate of dissimilar material
US7194912B2 (en) 2004-07-13 2007-03-27 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube-based sensor and method for continually sensing changes in a structure
JP2008523590A (ja) 2004-12-06 2008-07-03 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ ナノスケールワイヤベースのデータ格納装置
US7462656B2 (en) 2005-02-15 2008-12-09 Sabic Innovative Plastics Ip B.V. Electrically conductive compositions and method of manufacture thereof
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
US7278324B2 (en) 2005-06-15 2007-10-09 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube-based sensor and method for detection of crack growth in a structure
JP4831659B2 (ja) * 2005-09-02 2011-12-07 独立行政法人産業技術総合研究所 情報記録素子
US7826336B2 (en) 2006-02-23 2010-11-02 Qunano Ab Data storage nanostructures
CA2655340C (en) 2006-06-12 2016-10-25 President And Fellows Of Harvard College Nanosensors and related technologies
US7718995B2 (en) 2006-06-20 2010-05-18 Panasonic Corporation Nanowire, method for fabricating the same, and device having nanowires
WO2007148653A1 (ja) 2006-06-21 2007-12-27 Panasonic Corporation 電界効果トランジスタ
WO2008033303A2 (en) 2006-09-11 2008-03-20 President And Fellows Of Harvard College Branched nanoscale wires
WO2008127314A1 (en) 2006-11-22 2008-10-23 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
JP4167718B2 (ja) 2006-12-13 2008-10-22 松下電器産業株式会社 ナノワイヤ及びナノワイヤを備える装置並びにそれらの製造方法
US8049203B2 (en) 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such
EP2091862B1 (en) 2006-12-22 2019-12-11 QuNano AB Elevated led and method of producing such
JP5453105B2 (ja) 2006-12-22 2014-03-26 クナノ アーベー ナノ構造のｌｅｄ及びデバイス
US8183587B2 (en) 2006-12-22 2012-05-22 Qunano Ab LED with upstanding nanowire structure and method of producing such
JP2008209249A (ja) * 2007-02-27 2008-09-11 National Institutes Of Natural Sciences 酸素ガス検出素子、及び酸素ガス検出素子用ナノワイヤ
US8143144B2 (en) 2007-06-06 2012-03-27 Panasonic Corporation Semiconductor nanowire and its manufacturing method
JP2010538464A (ja) 2007-08-28 2010-12-09 カリフォルニア インスティテュート オブ テクノロジー ポリマ埋め込み型半導体ロッドアレイ
JP2008120674A (ja) * 2007-10-18 2008-05-29 National Institute For Materials Science 硫化亜鉛ナノケーブル
US7915146B2 (en) 2007-10-23 2011-03-29 International Business Machines Corporation Controlled doping of semiconductor nanowires
US8390005B2 (en) 2008-06-30 2013-03-05 Hewlett-Packard Development Company, L.P. Apparatus and method for nanowire optical emission
JP4923003B2 (ja) * 2008-07-17 2012-04-25 日本電信電話株式会社 ナノワイヤ作製方法、ナノワイヤ素子及びナノワイヤ構造物
JP2012528020A (ja) 2009-05-26 2012-11-12 ナノシス・インク． ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム
WO2011038228A1 (en) 2009-09-24 2011-03-31 President And Fellows Of Harvard College Bent nanowires and related probing of species
WO2011066570A2 (en) 2009-11-30 2011-06-03 California Institute Of Technology Semiconductor wire array structures, and solar cells and photodetectors based on such structures
JP5127856B2 (ja) * 2010-03-15 2013-01-23 株式会社東芝 半導体記憶装置
WO2011156042A2 (en) 2010-03-23 2011-12-15 California Institute Of Technology Heterojunction wire array solar cells
KR101176400B1 (ko) * 2010-05-28 2012-08-23 세키스이가가쿠 고교가부시키가이샤 편광성 재료 및 그것을 포함하는 편광막 제조용 도료 그리고 편광막
KR101927116B1 (ko) * 2011-10-31 2018-12-11 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR101927115B1 (ko) * 2011-10-31 2018-12-11 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR101927206B1 (ko) * 2011-11-28 2019-03-12 엘지디스플레이 주식회사 퀀텀 로드 발광 표시소자
KR102011900B1 (ko) * 2011-11-28 2019-08-20 엘지디스플레이 주식회사 가전제품의 외면에 부착되는 장식부재
KR101957270B1 (ko) * 2011-11-30 2019-03-13 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
US8687978B2 (en) 2011-12-13 2014-04-01 The Boeing Company Optical nanowire antenna with directional transmission
US8744272B1 (en) 2011-12-13 2014-06-03 The Boeing Company Scanning optical nanowire antenna
US8774636B2 (en) * 2011-12-13 2014-07-08 The Boeing Company Nanowire antenna
US10026560B2 (en) 2012-01-13 2018-07-17 The California Institute Of Technology Solar fuels generator
WO2013106793A1 (en) 2012-01-13 2013-07-18 California Institute Of Technology Solar fuel generators
US9476129B2 (en) 2012-04-02 2016-10-25 California Institute Of Technology Solar fuels generator
WO2013126432A1 (en) 2012-02-21 2013-08-29 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
US9947816B2 (en) 2012-04-03 2018-04-17 California Institute Of Technology Semiconductor structures for fuel generation
US9195787B2 (en) 2012-11-20 2015-11-24 Intel Corporation Methods and apparatus for modeling and simulating spintronic integrated circuits
US9553223B2 (en) 2013-01-24 2017-01-24 California Institute Of Technology Method for alignment of microwires
KR101989414B1 (ko) * 2018-01-02 2019-06-14 울산과학기술원 블록공중합체를 이용한 마이크로패턴 내부에 정렬된 금속 나노선 및 이의 제조방법
CN113782674B (zh) * 2020-06-09 2024-02-27 北京元芯碳基集成电路研究院 碳纳米管射频器件、制造方法及集成电路系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3243303B2 (ja) * 1991-10-28 2002-01-07 ゼロックス・コーポレーション 量子閉じ込め半導体発光素子及びその製造方法
JP2904090B2 (ja) * 1996-01-10 1999-06-14 日本電気株式会社 単一電子素子
GB2338592A (en) * 1998-06-19 1999-12-22 Secr Defence Single electron transistor
JP3754568B2 (ja) * 1999-01-29 2006-03-15 シャープ株式会社 量子細線の製造方法
DE60044238D1 (de) * 1999-02-22 2010-06-02 Clawson Joseph E Elektronisches bauteil auf basis von nanostrukturen
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6322713B1 (en) * 1999-07-15 2001-11-27 Agere Systems Guardian Corp. Nanoscale conductive connectors and method for making same
US6286226B1 (en) * 1999-09-24 2001-09-11 Agere Systems Guardian Corp. Tactile sensor comprising nanowires and method for making the same
JP4807920B2 (ja) 2000-06-30 2011-11-02 アルフレッサファーマ株式会社 総ホモシステイン測定方法
AU8664901A (en) 2000-08-22 2002-03-04 Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US6512119B2 (en) * 2001-01-12 2003-01-28 Hewlett-Packard Company Bistable molecular mechanical devices with an appended rotor activated by an electric field for electronic switching, gating and memory applications
CA2442985C (en) * 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

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