JP2004526440A5 - - Google Patents

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JP2004526440A5
JP2004526440A5 JP2002564953A JP2002564953A JP2004526440A5 JP 2004526440 A5 JP2004526440 A5 JP 2004526440A5 JP 2002564953 A JP2002564953 A JP 2002564953A JP 2002564953 A JP2002564953 A JP 2002564953A JP 2004526440 A5 JP2004526440 A5 JP 2004526440A5
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Japan
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protein
promoter
fungal host
secretable
under
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JP2002564953A
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Japanese (ja)
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JP4302985B2 (ja
JP2004526440A (ja
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Priority claimed from FI20010272A external-priority patent/FI120310B/fi
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Publication of JP2004526440A5 publication Critical patent/JP2004526440A5/ja
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Publication of JP4302985B2 publication Critical patent/JP4302985B2/ja
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JP2002564953A 2001-02-13 2002-02-13 真菌における分泌タンパク質の産生のための改良法 Expired - Fee Related JP4302985B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20010272A FI120310B (fi) 2001-02-13 2001-02-13 Parannettu menetelmä erittyvien proteiinien tuottamiseksi sienissä
PCT/FI2002/000116 WO2002064624A2 (en) 2001-02-13 2002-02-13 Improved method for production of secreted proteins in fungi

Publications (3)

Publication Number Publication Date
JP2004526440A JP2004526440A (ja) 2004-09-02
JP2004526440A5 true JP2004526440A5 (https=) 2005-12-22
JP4302985B2 JP4302985B2 (ja) 2009-07-29

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JP2002564953A Expired - Fee Related JP4302985B2 (ja) 2001-02-13 2002-02-13 真菌における分泌タンパク質の産生のための改良法

Country Status (7)

Country Link
US (1) US20040115790A1 (https=)
EP (1) EP1360196A2 (https=)
JP (1) JP4302985B2 (https=)
AU (1) AU2002233373B2 (https=)
CA (1) CA2438356A1 (https=)
FI (1) FI120310B (https=)
WO (1) WO2002064624A2 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7713725B2 (en) 2002-09-10 2010-05-11 Danisco Us Inc. Induction of gene expression using a high concentration sugar mixture
US9057061B2 (en) * 2003-12-23 2015-06-16 Novozymes Biopharma Dk A/S Gene expression technique
ATE358996T1 (de) * 2004-07-27 2007-05-15 Unilever Nv Belüftete, hydrophobin enthaltende nahrungsmittel
WO2006113861A2 (en) * 2005-04-20 2006-10-26 Wyeth Mammalian expression systems
SG174013A1 (en) 2006-07-27 2011-09-29 Wyeth Corp High-cell density fed-batch fermentation process for producing recombinant protein
WO2008079228A1 (en) * 2006-12-20 2008-07-03 Danisco Us, Inc., Genencor Division Assays for improved fungal strains
US8563272B2 (en) * 2008-06-27 2013-10-22 Edeniq, Inc. Cellulosic protein expression in yeast
WO2010111208A1 (en) * 2009-03-23 2010-09-30 University Of Miami Mitochondrial inhibitors and uses thereof
AT510299B1 (de) * 2010-12-22 2012-03-15 Univ Wien Tech Verfahren und mittel zur herstellung von n-acetylneuraminsäure (neunac)
WO2019003180A1 (en) * 2017-06-29 2019-01-03 Savitribai Phule Pune University IMPROVED PRODUCTION AND USES OF A SELF-ASSEMBLY PROTEIN SECRETED BY AN NATIVE YARROWIA LIPOLYTICA STRAIN
CN108192919B (zh) * 2018-02-01 2020-08-18 中国农业大学 一种培育抗旱转基因棉花的方法
CA3121271A1 (en) * 2018-11-28 2020-06-04 Novozymes A/S Modified filamentous fungal host cells
CN113528492B (zh) * 2021-09-07 2022-07-22 山东大学 一种将木质纤维素水解液回用于发酵生产纤维素酶液的方法
CN121227536A (zh) * 2025-12-02 2025-12-30 东北农业大学 一种适合于液态发酵的膨胀素重组黑曲霉及其构建方法、应用

Family Cites Families (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3497777A (en) * 1967-06-13 1970-02-24 Stanislas Teszner Multichannel field-effect semi-conductor device
US3564356A (en) * 1968-10-24 1971-02-16 Tektronix Inc High voltage integrated circuit transistor
US4638344A (en) * 1979-10-09 1987-01-20 Cardwell Jr Walter T Junction field-effect transistor controlled by merged depletion regions
US4326332A (en) * 1980-07-28 1982-04-27 International Business Machines Corp. Method of making a high density V-MOS memory array
JPS6016420A (ja) * 1983-07-08 1985-01-28 Mitsubishi Electric Corp 選択的エピタキシヤル成長方法
US4639761A (en) * 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
FR2566179B1 (fr) * 1984-06-14 1986-08-22 Commissariat Energie Atomique Procede d'autopositionnement d'un oxyde de champ localise par rapport a une tranchee d'isolement
GB8610600D0 (en) 1986-04-30 1986-06-04 Novo Industri As Transformation of trichoderma
JPH0693512B2 (ja) * 1986-06-17 1994-11-16 日産自動車株式会社 縦形ｍｏｓｆｅｔ
US5607511A (en) * 1992-02-21 1997-03-04 International Business Machines Corporation Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
US4746630A (en) * 1986-09-17 1988-05-24 Hewlett-Packard Company Method for producing recessed field oxide with improved sidewall characteristics
US5105243A (en) * 1987-02-26 1992-04-14 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
US4821095A (en) * 1987-03-12 1989-04-11 General Electric Company Insulated gate semiconductor device with extra short grid and method of fabrication
US4823176A (en) * 1987-04-03 1989-04-18 General Electric Company Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area
US4801986A (en) * 1987-04-03 1989-01-31 General Electric Company Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
US4811065A (en) * 1987-06-11 1989-03-07 Siliconix Incorporated Power DMOS transistor with high speed body diode
US4893160A (en) * 1987-11-13 1990-01-09 Siliconix Incorporated Method for increasing the performance of trenched devices and the resulting structure
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
US4903189A (en) * 1988-04-27 1990-02-20 General Electric Company Low noise, high frequency synchronous rectifier
JPH0216763A (ja) * 1988-07-05 1990-01-19 Toshiba Corp 半導体装置の製造方法
US5111253A (en) * 1989-05-09 1992-05-05 General Electric Company Multicellular FET having a Schottky diode merged therewith
US4992390A (en) * 1989-07-06 1991-02-12 General Electric Company Trench gate structure with thick bottom oxide
WO1991003842A1 (fr) * 1989-08-31 1991-03-21 Nippondenso Co., Ltd. Transistor bipolaire a grille isolee
US5079608A (en) * 1990-11-06 1992-01-07 Harris Corporation Power MOSFET transistor circuit with active clamp
US5298761A (en) * 1991-06-17 1994-03-29 Nikon Corporation Method and apparatus for exposure process
JPH06196723A (ja) * 1992-04-28 1994-07-15 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5430324A (en) * 1992-07-23 1995-07-04 Siliconix, Incorporated High voltage transistor having edge termination utilizing trench technology
US5294824A (en) * 1992-07-31 1994-03-15 Motorola, Inc. High voltage transistor having reduced on-resistance
CA2142602A1 (en) * 1992-08-19 1994-03-03 Tiina Hannele Nakari Fungal promoters active in the presence of glucose
US5300447A (en) * 1992-09-29 1994-04-05 Texas Instruments Incorporated Method of manufacturing a minimum scaled transistor
US5275965A (en) * 1992-11-25 1994-01-04 Micron Semiconductor, Inc. Trench isolation using gated sidewalls
US5418376A (en) * 1993-03-02 1995-05-23 Toyo Denki Seizo Kabushiki Kaisha Static induction semiconductor device with a distributed main electrode structure and static induction semiconductor device with a static induction main electrode shorted structure
DE4417150C2 (de) * 1994-05-17 1996-03-14 Siemens Ag Verfahren zur Herstellung einer Anordnung mit selbstverstärkenden dynamischen MOS-Transistorspeicherzellen
US5405794A (en) * 1994-06-14 1995-04-11 Philips Electronics North America Corporation Method of producing VDMOS device of increased power density
US5583368A (en) * 1994-08-11 1996-12-10 International Business Machines Corporation Stacked devices
US5674766A (en) * 1994-12-30 1997-10-07 Siliconix Incorporated Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
JPH08204179A (ja) * 1995-01-26 1996-08-09 Fuji Electric Co Ltd 炭化ケイ素トレンチｍｏｓｆｅｔ
JP3325736B2 (ja) * 1995-02-09 2002-09-17 三菱電機株式会社 絶縁ゲート型半導体装置
JP3291957B2 (ja) * 1995-02-17 2002-06-17 富士電機株式会社 縦型トレンチｍｉｓｆｅｔおよびその製造方法
US5595927A (en) * 1995-03-17 1997-01-21 Taiwan Semiconductor Manufacturing Company Ltd. Method for making self-aligned source/drain mask ROM memory cell using trench etched channel
US5592005A (en) * 1995-03-31 1997-01-07 Siliconix Incorporated Punch-through field effect transistor
JPH08306914A (ja) * 1995-04-27 1996-11-22 Nippondenso Co Ltd 半導体装置およびその製造方法
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
US5629543A (en) * 1995-08-21 1997-05-13 Siliconix Incorporated Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness
US5705409A (en) * 1995-09-28 1998-01-06 Motorola Inc. Method for forming trench transistor structure
US5879971A (en) * 1995-09-28 1999-03-09 Motorola Inc. Trench random access memory cell and method of formation
US6037632A (en) * 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
EP1408554B1 (de) * 1996-02-05 2015-03-25 Infineon Technologies AG Durch Feldeffekt steuerbares Halbleiterbauelement
US5770878A (en) * 1996-04-10 1998-06-23 Harris Corporation Trench MOS gate device
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
JP2891205B2 (ja) * 1996-10-21 1999-05-17 日本電気株式会社 半導体集積回路の製造方法
US6168983B1 (en) * 1996-11-05 2001-01-02 Power Integrations, Inc. Method of making a high-voltage transistor with multiple lateral conduction layers
US6207994B1 (en) * 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
AU5123498A (en) * 1996-11-29 1998-06-22 Rohm Enzyme Finland Oy Truncated cbh i promoter from trichoderma reesei and use thereof
US6011298A (en) * 1996-12-31 2000-01-04 Stmicroelectronics, Inc. High voltage termination with buried field-shaping region
JP3938964B2 (ja) * 1997-02-10 2007-06-27 三菱電機株式会社 高耐圧半導体装置およびその製造方法
US5877528A (en) * 1997-03-03 1999-03-02 Megamos Corporation Structure to provide effective channel-stop in termination areas for trenched power transistors
KR100225409B1 (ko) * 1997-03-27 1999-10-15 김덕중 트렌치 디-모오스 및 그의 제조 방법
US5879994A (en) * 1997-04-15 1999-03-09 National Semiconductor Corporation Self-aligned method of fabricating terrace gate DMOS transistor
US6037628A (en) * 1997-06-30 2000-03-14 Intersil Corporation Semiconductor structures with trench contacts
ATE277184T1 (de) * 1997-07-11 2004-10-15 Genencor Int Trichoderma reesei swollenin protein und dafür kodierende dns sequenz
JP3502531B2 (ja) * 1997-08-28 2004-03-02 株式会社ルネサステクノロジ 半導体装置の製造方法
DE19740195C2 (de) * 1997-09-12 1999-12-02 Siemens Ag Halbleiterbauelement mit Metall-Halbleiterübergang mit niedrigem Sperrstrom
US6337499B1 (en) * 1997-11-03 2002-01-08 Infineon Technologies Ag Semiconductor component
GB9723468D0 (en) * 1997-11-07 1998-01-07 Zetex Plc Method of semiconductor device fabrication
US5900663A (en) * 1998-02-07 1999-05-04 Xemod, Inc. Quasi-mesh gate structure for lateral RF MOS devices
US5949104A (en) * 1998-02-07 1999-09-07 Xemod, Inc. Source connection structure for lateral RF MOS devices
US5897343A (en) * 1998-03-30 1999-04-27 Motorola, Inc. Method of making a power switching trench MOSFET having aligned source regions
JP2002503401A (ja) * 1998-04-08 2002-01-29 シーメンス アクチエンゲゼルシヤフト プレーナ構造用の高耐圧コーナー部シール体
US5945724A (en) * 1998-04-09 1999-08-31 Micron Technology, Inc. Trench isolation region for semiconductor device
US6048772A (en) * 1998-05-04 2000-04-11 Xemod, Inc. Method for fabricating a lateral RF MOS device with an non-diffusion source-backside connection
DE19820223C1 (de) * 1998-05-06 1999-11-04 Siemens Ag Verfahren zum Herstellen einer Epitaxieschicht mit lateral veränderlicher Dotierung
US6015727A (en) * 1998-06-08 2000-01-18 Wanlass; Frank M. Damascene formation of borderless contact MOS transistors
DE19848828C2 (de) * 1998-10-22 2001-09-13 Infineon Technologies Ag Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit
DE19854915C2 (de) * 1998-11-27 2002-09-05 Infineon Technologies Ag MOS-Feldeffekttransistor mit Hilfselektrode
US6351018B1 (en) * 1999-02-26 2002-02-26 Fairchild Semiconductor Corporation Monolithically integrated trench MOSFET and Schottky diode
US6204097B1 (en) * 1999-03-01 2001-03-20 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
EP1163260B1 (en) * 1999-03-25 2009-05-20 Valtion Teknillinen Tutkimuskeskus Process for partitioning of proteins
US6188105B1 (en) * 1999-04-01 2001-02-13 Intersil Corporation High density MOS-gated power device and process for forming same
US6198127B1 (en) * 1999-05-19 2001-03-06 Intersil Corporation MOS-gated power device having extended trench and doping zone and process for forming same
US6191447B1 (en) * 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
DE69938541D1 (de) * 1999-06-03 2008-05-29 St Microelectronics Srl Leistungshalbleiteranordnung mit einer Randabschlussstruktur mit einem Spannungsteiler
JP3851744B2 (ja) * 1999-06-28 2006-11-29 株式会社東芝 半導体装置の製造方法
GB9917099D0 (en) * 1999-07-22 1999-09-22 Koninkl Philips Electronics Nv Cellular trench-gate field-effect transistors
JP3971062B2 (ja) * 1999-07-29 2007-09-05 株式会社東芝 高耐圧半導体装置
US20030060013A1 (en) * 1999-09-24 2003-03-27 Bruce D. Marchant Method of manufacturing trench field effect transistors with trenched heavy body
GB9922764D0 (en) * 1999-09-28 1999-11-24 Koninkl Philips Electronics Nv Manufacture of trench-gate semiconductor devices
US6222233B1 (en) * 1999-10-04 2001-04-24 Xemod, Inc. Lateral RF MOS device with improved drain structure
US6346469B1 (en) * 2000-01-03 2002-02-12 Motorola, Inc. Semiconductor device and a process for forming the semiconductor device
US6376878B1 (en) * 2000-02-11 2002-04-23 Fairchild Semiconductor Corporation MOS-gated devices with alternating zones of conductivity
DE10026740C2 (de) * 2000-05-30 2002-04-11 Infineon Technologies Ag Halbleiterschaltelement mit integrierter Schottky-Diode und Verfahren zu dessen Herstellung
US6627949B2 (en) * 2000-06-02 2003-09-30 General Semiconductor, Inc. High voltage power MOSFET having low on-resistance
US6479352B2 (en) * 2000-06-02 2002-11-12 General Semiconductor, Inc. Method of fabricating high voltage power MOSFET having low on-resistance
US6921939B2 (en) * 2000-07-20 2005-07-26 Fairchild Semiconductor Corporation Power MOSFET and method for forming same using a self-aligned body implant
JP2002043571A (ja) * 2000-07-28 2002-02-08 Nec Kansai Ltd 半導体装置
US6362112B1 (en) * 2000-11-08 2002-03-26 Fabtech, Inc. Single step etched moat
TW543146B (en) * 2001-03-09 2003-07-21 Fairchild Semiconductor Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge
JP2002270840A (ja) * 2001-03-09 2002-09-20 Toshiba Corp パワーｍｏｓｆｅｔ
US6621107B2 (en) * 2001-08-23 2003-09-16 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier

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