JP2004523350A5 - - Google Patents
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- Publication number
- JP2004523350A5 JP2004523350A5 JP2002567476A JP2002567476A JP2004523350A5 JP 2004523350 A5 JP2004523350 A5 JP 2004523350A5 JP 2002567476 A JP2002567476 A JP 2002567476A JP 2002567476 A JP2002567476 A JP 2002567476A JP 2004523350 A5 JP2004523350 A5 JP 2004523350A5
- Authority
- JP
- Japan
- Prior art keywords
- component
- substrate
- plasma
- liquid crystal
- crystal polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 16
- 238000000034 method Methods 0.000 claims 14
- 229920000106 Liquid crystal polymer Polymers 0.000 claims 9
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims 9
- 239000011248 coating agent Substances 0.000 claims 5
- 238000000576 coating method Methods 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 3
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 2
- 238000005507 spraying Methods 0.000 claims 2
- 229910052580 B4C Inorganic materials 0.000 claims 1
- 229910052582 BN Inorganic materials 0.000 claims 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 239000011324 bead Substances 0.000 claims 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 238000009826 distribution Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000000945 filler Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000002861 polymer material Substances 0.000 claims 1
- 239000003870 refractory metal Substances 0.000 claims 1
- 238000007788 roughening Methods 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/749,921 US7128804B2 (en) | 2000-12-29 | 2000-12-29 | Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof |
| PCT/US2001/043152 WO2002068129A1 (en) | 2000-12-29 | 2001-11-21 | Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004523350A JP2004523350A (ja) | 2004-08-05 |
| JP2004523350A5 true JP2004523350A5 (enExample) | 2005-12-22 |
Family
ID=25015771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002567476A Pending JP2004523350A (ja) | 2000-12-29 | 2001-11-21 | 半導体処理装置の耐食性構成要素及びその製造方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US7128804B2 (enExample) |
| EP (1) | EP1345703B1 (enExample) |
| JP (1) | JP2004523350A (enExample) |
| KR (2) | KR20080052687A (enExample) |
| CN (1) | CN100434196C (enExample) |
| AT (1) | ATE456985T1 (enExample) |
| DE (1) | DE60141250D1 (enExample) |
| TW (1) | TWI313304B (enExample) |
| WO (1) | WO2002068129A1 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010062209A (ko) | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
| JP4602532B2 (ja) * | 2000-11-10 | 2010-12-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20040055709A1 (en) * | 2002-09-19 | 2004-03-25 | Applied Materials, Inc. | Electrostatic chuck having a low level of particle generation and method of fabricating same |
| US7147749B2 (en) * | 2002-09-30 | 2006-12-12 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system |
| US7204912B2 (en) * | 2002-09-30 | 2007-04-17 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
| US7166200B2 (en) | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
| US7166166B2 (en) | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
| US6837966B2 (en) | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
| US7137353B2 (en) | 2002-09-30 | 2006-11-21 | Tokyo Electron Limited | Method and apparatus for an improved deposition shield in a plasma processing system |
| US6798519B2 (en) * | 2002-09-30 | 2004-09-28 | Tokyo Electron Limited | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
| KR100772740B1 (ko) | 2002-11-28 | 2007-11-01 | 동경 엘렉트론 주식회사 | 플라즈마 처리 용기 내부재 |
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| CN100495413C (zh) | 2003-03-31 | 2009-06-03 | 东京毅力科创株式会社 | 用于邻接在处理元件上的相邻覆层的方法 |
| JP4532479B2 (ja) | 2003-03-31 | 2010-08-25 | 東京エレクトロン株式会社 | 処理部材のためのバリア層およびそれと同じものを形成する方法。 |
| US7552521B2 (en) | 2004-12-08 | 2009-06-30 | Tokyo Electron Limited | Method and apparatus for improved baffle plate |
| US7601242B2 (en) | 2005-01-11 | 2009-10-13 | Tokyo Electron Limited | Plasma processing system and baffle assembly for use in plasma processing system |
| US9758869B2 (en) * | 2009-05-13 | 2017-09-12 | Applied Materials, Inc. | Anodized showerhead |
| US20110117728A1 (en) * | 2009-08-27 | 2011-05-19 | Applied Materials, Inc. | Method of decontamination of process chamber after in-situ chamber clean |
| US20110086462A1 (en) * | 2009-10-08 | 2011-04-14 | Ovshinsky Stanford R | Process for Manufacturing Solar Cells including Ambient Pressure Plasma Torch Step |
| US9129795B2 (en) * | 2011-04-11 | 2015-09-08 | Quadrant Epp Ag | Process for plasma treatment employing ceramic-filled polyamideimide composite parts |
| EP2525387A1 (en) * | 2011-05-17 | 2012-11-21 | Quadrant Epp Ag | Process for plasma treatment employing ceramic-filled polyamideimide composite parts |
| US20130156530A1 (en) * | 2011-12-14 | 2013-06-20 | Intermolecular, Inc. | Method and apparatus for reducing contamination of substrate |
| CN103681201B (zh) * | 2012-08-30 | 2016-03-09 | 宁波江丰电子材料股份有限公司 | 溅射环及其制造方法 |
| KR101419515B1 (ko) * | 2012-09-24 | 2014-07-15 | 피에스케이 주식회사 | 배플 및 배플의 표면처리장치, 그리고 기판 처리 장치 및 표면 처리 방법 |
| JP5958560B2 (ja) * | 2013-01-09 | 2016-08-02 | 株式会社村田製作所 | 処理済み液晶ポリマーパウダー、これを含むペーストおよび、それらを用いた液晶ポリマーシート、積層体、ならびに処理済み液晶ポリマーパウダーの製造方法 |
| US8970114B2 (en) | 2013-02-01 | 2015-03-03 | Lam Research Corporation | Temperature controlled window of a plasma processing chamber component |
| JP6449224B2 (ja) | 2013-03-14 | 2019-01-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板上の高純度アルミニウムトップコート |
| US9123651B2 (en) | 2013-03-27 | 2015-09-01 | Lam Research Corporation | Dense oxide coated component of a plasma processing chamber and method of manufacture thereof |
| US9449797B2 (en) * | 2013-05-07 | 2016-09-20 | Lam Research Corporation | Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface |
| US9624593B2 (en) | 2013-08-29 | 2017-04-18 | Applied Materials, Inc. | Anodization architecture for electro-plate adhesion |
| US20150099069A1 (en) * | 2013-10-07 | 2015-04-09 | AeonClad Coatings, LLC Technologies, Inc. | Low-cost plasma reactor |
| US9663870B2 (en) | 2013-11-13 | 2017-05-30 | Applied Materials, Inc. | High purity metallic top coat for semiconductor manufacturing components |
| US10524611B2 (en) * | 2014-07-03 | 2020-01-07 | B/E Aerospace, Inc. | Multi-phase circuit flow-through heater for aerospace beverage maker |
| US11083329B2 (en) | 2014-07-03 | 2021-08-10 | B/E Aerospace, Inc. | Multi-phase circuit flow-through heater for aerospace beverage maker |
| KR101909479B1 (ko) * | 2016-10-06 | 2018-10-19 | 세메스 주식회사 | 기판 지지 유닛, 그를 포함하는 기판 처리 장치, 그리고 그 제어 방법 |
| CN112017932B (zh) * | 2019-05-31 | 2022-11-29 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置中气体输送系统的耐腐蚀结构 |
| FI129719B (en) * | 2019-06-25 | 2022-07-29 | Picosun Oy | PLASMA IN SUBSTRATE PROCESSING EQUIPMENT |
| CN114068273B (zh) * | 2020-07-31 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | 一种零部件及其制备方法和等离子体反应装置 |
| US20230295789A1 (en) * | 2022-03-15 | 2023-09-21 | Applied Materials, Inc. | Dense vertically segmented silicon coating for low defectivity in high-temperature rapid thermal processing |
| US20250372351A1 (en) * | 2022-10-31 | 2025-12-04 | Lam Research Corporation | Refractory components for a semiconductor processing chamber |
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|---|---|---|---|---|
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| FR2538987A1 (fr) * | 1983-01-05 | 1984-07-06 | Commissariat Energie Atomique | Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif |
| JPS62103379A (ja) | 1985-10-29 | 1987-05-13 | Showa Alum Corp | Cvd装置およびドライ・エツチング装置における真空チヤンバの製造方法 |
| US4736087A (en) * | 1987-01-12 | 1988-04-05 | Olin Corporation | Plasma stripper with multiple contact point cathode |
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| US5296542A (en) * | 1988-10-11 | 1994-03-22 | Amoco Corporation | Heat resistant polymers and blends of hydroquinone poly (isoterephthalates) containing residues of p-hydroxybenzoic acid |
| EP0390908A4 (en) * | 1988-10-11 | 1992-07-08 | Amoco Corporation | Blends of liquid crystalline polymers of hydroquinone poly(iso-terephthalates) p-hydroxybenzoic acid polymers and another lcp containing oxybisbenzene and naphthalene derivatives |
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| DE3941862A1 (de) * | 1989-12-19 | 1991-06-20 | Bayer Ag | Thermisch gespritzte schichten aus bestimmten, gegebenenfalls gefuellten hochtemperaturbestaendigen kunststoffmassen |
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| JP3190886B2 (ja) * | 1998-06-17 | 2001-07-23 | 日本電気株式会社 | 高分子膜の成長方法 |
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-
2000
- 2000-12-29 US US09/749,921 patent/US7128804B2/en not_active Expired - Lifetime
-
2001
- 2001-11-21 CN CNB018224520A patent/CN100434196C/zh not_active Expired - Lifetime
- 2001-11-21 AT AT01270109T patent/ATE456985T1/de not_active IP Right Cessation
- 2001-11-21 KR KR1020087010408A patent/KR20080052687A/ko not_active Ceased
- 2001-11-21 KR KR1020037008853A patent/KR100849866B1/ko not_active Expired - Fee Related
- 2001-11-21 JP JP2002567476A patent/JP2004523350A/ja active Pending
- 2001-11-21 WO PCT/US2001/043152 patent/WO2002068129A1/en not_active Ceased
- 2001-11-21 DE DE60141250T patent/DE60141250D1/de not_active Expired - Lifetime
- 2001-11-21 EP EP01270109A patent/EP1345703B1/en not_active Expired - Lifetime
- 2001-12-04 TW TW090130000A patent/TWI313304B/zh not_active IP Right Cessation
-
2006
- 2006-09-22 US US11/525,102 patent/US7605086B2/en not_active Expired - Fee Related
-
2009
- 2009-09-14 US US12/559,177 patent/US8486841B2/en not_active Expired - Fee Related
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