CN100434196C - 半导体加工设备的抗腐蚀组件及其制造方法 - Google Patents

半导体加工设备的抗腐蚀组件及其制造方法 Download PDF

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Publication number
CN100434196C
CN100434196C CNB018224520A CN01822452A CN100434196C CN 100434196 C CN100434196 C CN 100434196C CN B018224520 A CNB018224520 A CN B018224520A CN 01822452 A CN01822452 A CN 01822452A CN 100434196 C CN100434196 C CN 100434196C
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China
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plasma
substrate
component
liquid crystal
chamber
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Expired - Lifetime
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CNB018224520A
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Chinese (zh)
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CN1487858A (zh
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R·J·奥丹尼尔
C·C·常
J·E·多尔蒂
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
CNB018224520A 2000-12-29 2001-11-21 半导体加工设备的抗腐蚀组件及其制造方法 Expired - Lifetime CN100434196C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/749,921 US7128804B2 (en) 2000-12-29 2000-12-29 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
US09/749,921 2000-12-29

Publications (2)

Publication Number Publication Date
CN1487858A CN1487858A (zh) 2004-04-07
CN100434196C true CN100434196C (zh) 2008-11-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018224520A Expired - Lifetime CN100434196C (zh) 2000-12-29 2001-11-21 半导体加工设备的抗腐蚀组件及其制造方法

Country Status (9)

Country Link
US (3) US7128804B2 (enExample)
EP (1) EP1345703B1 (enExample)
JP (1) JP2004523350A (enExample)
KR (2) KR20080052687A (enExample)
CN (1) CN100434196C (enExample)
AT (1) ATE456985T1 (enExample)
DE (1) DE60141250D1 (enExample)
TW (1) TWI313304B (enExample)
WO (1) WO2002068129A1 (enExample)

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US6837966B2 (en) 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
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US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
JP6449224B2 (ja) 2013-03-14 2019-01-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板上の高純度アルミニウムトップコート
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CN112017932B (zh) * 2019-05-31 2022-11-29 中微半导体设备(上海)股份有限公司 等离子体处理装置中气体输送系统的耐腐蚀结构
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Also Published As

Publication number Publication date
EP1345703B1 (en) 2010-02-03
JP2004523350A (ja) 2004-08-05
WO2002068129A1 (en) 2002-09-06
US7128804B2 (en) 2006-10-31
ATE456985T1 (de) 2010-02-15
US20100003826A1 (en) 2010-01-07
CN1487858A (zh) 2004-04-07
TWI313304B (en) 2009-08-11
KR100849866B1 (ko) 2008-08-01
US20070012657A1 (en) 2007-01-18
EP1345703A1 (en) 2003-09-24
DE60141250D1 (de) 2010-03-25
KR20030066785A (ko) 2003-08-09
US20020086545A1 (en) 2002-07-04
US8486841B2 (en) 2013-07-16
US7605086B2 (en) 2009-10-20
KR20080052687A (ko) 2008-06-11

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