ATE456985T1 - Korrosionsbeständiges bauteil für anlage zur behandlung von halbleitern und verfahren zu seiner herstellung - Google Patents

Korrosionsbeständiges bauteil für anlage zur behandlung von halbleitern und verfahren zu seiner herstellung

Info

Publication number
ATE456985T1
ATE456985T1 AT01270109T AT01270109T ATE456985T1 AT E456985 T1 ATE456985 T1 AT E456985T1 AT 01270109 T AT01270109 T AT 01270109T AT 01270109 T AT01270109 T AT 01270109T AT E456985 T1 ATE456985 T1 AT E456985T1
Authority
AT
Austria
Prior art keywords
liquid crystalline
crystalline polymer
component
corrosion
producing
Prior art date
Application number
AT01270109T
Other languages
German (de)
English (en)
Inventor
Robert O'donnell
Christopher Chang
John Daugherty
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE456985T1 publication Critical patent/ATE456985T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AT01270109T 2000-12-29 2001-11-21 Korrosionsbeständiges bauteil für anlage zur behandlung von halbleitern und verfahren zu seiner herstellung ATE456985T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/749,921 US7128804B2 (en) 2000-12-29 2000-12-29 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
PCT/US2001/043152 WO2002068129A1 (en) 2000-12-29 2001-11-21 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof

Publications (1)

Publication Number Publication Date
ATE456985T1 true ATE456985T1 (de) 2010-02-15

Family

ID=25015771

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01270109T ATE456985T1 (de) 2000-12-29 2001-11-21 Korrosionsbeständiges bauteil für anlage zur behandlung von halbleitern und verfahren zu seiner herstellung

Country Status (9)

Country Link
US (3) US7128804B2 (enExample)
EP (1) EP1345703B1 (enExample)
JP (1) JP2004523350A (enExample)
KR (2) KR20080052687A (enExample)
CN (1) CN100434196C (enExample)
AT (1) ATE456985T1 (enExample)
DE (1) DE60141250D1 (enExample)
TW (1) TWI313304B (enExample)
WO (1) WO2002068129A1 (enExample)

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Also Published As

Publication number Publication date
EP1345703B1 (en) 2010-02-03
JP2004523350A (ja) 2004-08-05
WO2002068129A1 (en) 2002-09-06
US7128804B2 (en) 2006-10-31
US20100003826A1 (en) 2010-01-07
CN1487858A (zh) 2004-04-07
TWI313304B (en) 2009-08-11
KR100849866B1 (ko) 2008-08-01
US20070012657A1 (en) 2007-01-18
EP1345703A1 (en) 2003-09-24
CN100434196C (zh) 2008-11-19
DE60141250D1 (de) 2010-03-25
KR20030066785A (ko) 2003-08-09
US20020086545A1 (en) 2002-07-04
US8486841B2 (en) 2013-07-16
US7605086B2 (en) 2009-10-20
KR20080052687A (ko) 2008-06-11

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