DE60141250D1 - Korrosionsbeständiges bauteil für anlage zur behandlung von halbleitern und verfahren zu seiner herstellung - Google Patents

Korrosionsbeständiges bauteil für anlage zur behandlung von halbleitern und verfahren zu seiner herstellung

Info

Publication number
DE60141250D1
DE60141250D1 DE60141250T DE60141250T DE60141250D1 DE 60141250 D1 DE60141250 D1 DE 60141250D1 DE 60141250 T DE60141250 T DE 60141250T DE 60141250 T DE60141250 T DE 60141250T DE 60141250 D1 DE60141250 D1 DE 60141250D1
Authority
DE
Germany
Prior art keywords
liquid crystalline
crystalline polymer
component
corrosion
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60141250T
Other languages
English (en)
Inventor
Robert J O'donnell
Christopher C Chang
John E Daugherty
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE60141250D1 publication Critical patent/DE60141250D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
DE60141250T 2000-12-29 2001-11-21 Korrosionsbeständiges bauteil für anlage zur behandlung von halbleitern und verfahren zu seiner herstellung Expired - Lifetime DE60141250D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/749,921 US7128804B2 (en) 2000-12-29 2000-12-29 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
PCT/US2001/043152 WO2002068129A1 (en) 2000-12-29 2001-11-21 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof

Publications (1)

Publication Number Publication Date
DE60141250D1 true DE60141250D1 (de) 2010-03-25

Family

ID=25015771

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60141250T Expired - Lifetime DE60141250D1 (de) 2000-12-29 2001-11-21 Korrosionsbeständiges bauteil für anlage zur behandlung von halbleitern und verfahren zu seiner herstellung

Country Status (9)

Country Link
US (3) US7128804B2 (de)
EP (1) EP1345703B1 (de)
JP (1) JP2004523350A (de)
KR (2) KR100849866B1 (de)
CN (1) CN100434196C (de)
AT (1) ATE456985T1 (de)
DE (1) DE60141250D1 (de)
TW (1) TWI313304B (de)
WO (1) WO2002068129A1 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW514996B (en) 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
JP4602532B2 (ja) * 2000-11-10 2010-12-22 東京エレクトロン株式会社 プラズマ処理装置
US20040055709A1 (en) * 2002-09-19 2004-03-25 Applied Materials, Inc. Electrostatic chuck having a low level of particle generation and method of fabricating same
US7137353B2 (en) 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US6798519B2 (en) 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7166166B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7204912B2 (en) 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US6837966B2 (en) 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7166200B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
TW200423195A (en) 2002-11-28 2004-11-01 Tokyo Electron Ltd Internal member of a plasma processing vessel
US20040134427A1 (en) * 2003-01-09 2004-07-15 Derderian Garo J. Deposition chamber surface enhancement and resulting deposition chambers
CN102460649B (zh) * 2009-05-13 2015-03-11 应用材料公司 经阳极处理的喷头
WO2011031521A2 (en) * 2009-08-27 2011-03-17 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean
US20110086462A1 (en) * 2009-10-08 2011-04-14 Ovshinsky Stanford R Process for Manufacturing Solar Cells including Ambient Pressure Plasma Torch Step
US9129795B2 (en) * 2011-04-11 2015-09-08 Quadrant Epp Ag Process for plasma treatment employing ceramic-filled polyamideimide composite parts
EP2525387A1 (de) * 2011-05-17 2012-11-21 Quadrant Epp Ag Verfahren zur Plasmabehandlung mit keramikgefüllten Polyamid-Imid-Verbundstoffteilen
US20130156530A1 (en) * 2011-12-14 2013-06-20 Intermolecular, Inc. Method and apparatus for reducing contamination of substrate
CN103681201B (zh) * 2012-08-30 2016-03-09 宁波江丰电子材料股份有限公司 溅射环及其制造方法
KR101419515B1 (ko) * 2012-09-24 2014-07-15 피에스케이 주식회사 배플 및 배플의 표면처리장치, 그리고 기판 처리 장치 및 표면 처리 방법
CN104968713B (zh) * 2013-01-09 2019-05-03 株式会社村田制作所 处理完的液晶聚合物粉末的制造方法
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
KR20150129660A (ko) 2013-03-14 2015-11-20 어플라이드 머티어리얼스, 인코포레이티드 기판 상의 고순도 알루미늄 탑 코트
US9123651B2 (en) 2013-03-27 2015-09-01 Lam Research Corporation Dense oxide coated component of a plasma processing chamber and method of manufacture thereof
US9449797B2 (en) * 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
US9624593B2 (en) 2013-08-29 2017-04-18 Applied Materials, Inc. Anodization architecture for electro-plate adhesion
US20150099069A1 (en) * 2013-10-07 2015-04-09 AeonClad Coatings, LLC Technologies, Inc. Low-cost plasma reactor
US9663870B2 (en) 2013-11-13 2017-05-30 Applied Materials, Inc. High purity metallic top coat for semiconductor manufacturing components
US10524611B2 (en) * 2014-07-03 2020-01-07 B/E Aerospace, Inc. Multi-phase circuit flow-through heater for aerospace beverage maker
US11083329B2 (en) 2014-07-03 2021-08-10 B/E Aerospace, Inc. Multi-phase circuit flow-through heater for aerospace beverage maker
KR101909479B1 (ko) * 2016-10-06 2018-10-19 세메스 주식회사 기판 지지 유닛, 그를 포함하는 기판 처리 장치, 그리고 그 제어 방법
CN112017932B (zh) * 2019-05-31 2022-11-29 中微半导体设备(上海)股份有限公司 等离子体处理装置中气体输送系统的耐腐蚀结构
FI129719B (en) * 2019-06-25 2022-07-29 Picosun Oy PLASMA IN SUBSTRATE PROCESSING EQUIPMENT
CN114068273B (zh) * 2020-07-31 2024-04-05 中微半导体设备(上海)股份有限公司 一种零部件及其制备方法和等离子体反应装置
US20230295789A1 (en) * 2022-03-15 2023-09-21 Applied Materials, Inc. Dense vertically segmented silicon coating for low defectivity in high-temperature rapid thermal processing
WO2024097506A1 (en) * 2022-10-31 2024-05-10 Lam Research Corporation Refractory components for a semiconductor processing chamber

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPS62103379A (ja) 1985-10-29 1987-05-13 Showa Alum Corp Ｃｖｄ装置およびドライ・エツチング装置における真空チヤンバの製造方法
US4736087A (en) * 1987-01-12 1988-04-05 Olin Corporation Plasma stripper with multiple contact point cathode
US5262029A (en) * 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US5296542A (en) * 1988-10-11 1994-03-22 Amoco Corporation Heat resistant polymers and blends of hydroquinone poly (isoterephthalates) containing residues of p-hydroxybenzoic acid
US5216092A (en) * 1988-10-11 1993-06-01 Amoco Corporation Blends of liquid crystalline polymers of hydroquinone poly(isoterephthalates) p-hydroxybenzoic acid polymers and another LCP containing oxybisbenzene and naphthalene derivatives
WO1990011617A1 (en) 1989-03-28 1990-10-04 Nippon Steel Corporation Resin-coated bonding wire, method of producing the same and semiconductor device
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
DE3941862A1 (de) * 1989-12-19 1991-06-20 Bayer Ag Thermisch gespritzte schichten aus bestimmten, gegebenenfalls gefuellten hochtemperaturbestaendigen kunststoffmassen
US5113159A (en) 1990-02-22 1992-05-12 At&T Bell Laboratories Communications transmission system including facilities for suppressing electromagnetic interference
US20020004309A1 (en) * 1990-07-31 2002-01-10 Kenneth S. Collins Processes used in an inductively coupled plasma reactor
US5196471A (en) * 1990-11-19 1993-03-23 Sulzer Plasma Technik, Inc. Thermal spray powders for abradable coatings, abradable coatings containing solid lubricants and methods of fabricating abradable coatings
US5200232A (en) * 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US5248530A (en) 1991-11-27 1993-09-28 Hoechst Celanese Corp. Heat sealable coextruded lcp film
US5413058A (en) 1992-12-09 1995-05-09 Hirose Manufacturing Co., Ltd. Inner bobbin case holder of a fully rotating hook
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5522932A (en) * 1993-05-14 1996-06-04 Applied Materials, Inc. Corrosion-resistant apparatus
US5397502A (en) * 1993-06-10 1995-03-14 E. I. Du Pont De Nemours And Company Heat resistant liquid crsytalline polymers
US5798016A (en) * 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5474649A (en) * 1994-03-08 1995-12-12 Applied Materials, Inc. Plasma processing apparatus employing a textured focus ring
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
EP0760526A4 (de) * 1994-05-17 2001-01-10 Hitachi Ltd Einrichtung und verfahren zur plasma-behandlung
US5606485A (en) * 1994-07-18 1997-02-25 Applied Materials, Inc. Electrostatic chuck having improved erosion resistance
US5641375A (en) * 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
US5824605A (en) * 1995-07-31 1998-10-20 Lam Research Corporation Gas dispersion window for plasma apparatus and method of use thereof
CN1074006C (zh) 1995-10-13 2001-10-31 陶氏化学公司 涂覆的塑料基材
US5838529A (en) * 1995-12-22 1998-11-17 Lam Research Corporation Low voltage electrostatic clamp for substrates such as dielectric substrates
US5720818A (en) 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
JPH09298190A (ja) 1996-05-02 1997-11-18 Iwaki Coating Kogyo:Kk ドライエッチング装置用電極の製造方法
US6048798A (en) * 1996-06-05 2000-04-11 Lam Research Corporation Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer
US5820723A (en) * 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5863376A (en) * 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US5993594A (en) * 1996-09-30 1999-11-30 Lam Research Corporation Particle controlling method and apparatus for a plasma processing chamber
SG54602A1 (en) 1996-11-26 1998-11-16 Applied Materials Inc Coated deposition chamber equipment
JP3972347B2 (ja) 1997-03-28 2007-09-05 Ｊｓｒ株式会社 液状硬化性樹脂組成物
US5879523A (en) * 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
US5939153A (en) 1997-11-13 1999-08-17 The Elizabeth And Sandor Valyi Foundation, Inc. Multilayered plastic container
US6251216B1 (en) * 1997-12-17 2001-06-26 Matsushita Electronics Corporation Apparatus and method for plasma processing
JP3483494B2 (ja) * 1998-03-31 2004-01-06 キヤノン株式会社 真空処理装置および真空処理方法、並びに該方法によって作成される電子写真感光体
JP3748712B2 (ja) 1998-05-29 2006-02-22 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ライナー用樹脂成形体
US6703092B1 (en) 1998-05-29 2004-03-09 E.I. Du Pont De Nemours And Company Resin molded article for chamber liner
JP3190886B2 (ja) * 1998-06-17 2001-07-23 日本電気株式会社 高分子膜の成長方法
JP2000100781A (ja) 1998-09-18 2000-04-07 Miyazaki Oki Electric Co Ltd エッチング装置および半導体デバイスの製造方法
US6468665B1 (en) * 1998-12-16 2002-10-22 Sumitomo Chemical Company, Limited Process for melt-bonding molded article of liquid crystalline polyester with metal
US6048919A (en) * 1999-01-29 2000-04-11 Chip Coolers, Inc. Thermally conductive composite material
US6120854A (en) * 1999-02-19 2000-09-19 Northrop Grumman Liquid crystal polymer coating process
JP4193268B2 (ja) * 1999-02-26 2008-12-10 ソニー株式会社 薄膜形成装置および薄膜形成方法ならびに案内ガイドロール
US6326597B1 (en) * 1999-04-15 2001-12-04 Applied Materials, Inc. Temperature control system for process chamber
US20020036881A1 (en) * 1999-05-07 2002-03-28 Shamouil Shamouilian Electrostatic chuck having composite base and method
US6508911B1 (en) * 1999-08-16 2003-01-21 Applied Materials Inc. Diamond coated parts in a plasma reactor
US6372299B1 (en) 1999-09-28 2002-04-16 General Electric Company Method for improving the oxidation-resistance of metal substrates coated with thermal barrier coatings
US6294261B1 (en) 1999-10-01 2001-09-25 General Electric Company Method for smoothing the surface of a protective coating
TW514996B (en) 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US6403491B1 (en) * 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window

Also Published As

Publication number Publication date
US8486841B2 (en) 2013-07-16
US20020086545A1 (en) 2002-07-04
TWI313304B (en) 2009-08-11
ATE456985T1 (de) 2010-02-15
JP2004523350A (ja) 2004-08-05
WO2002068129A1 (en) 2002-09-06
CN100434196C (zh) 2008-11-19
EP1345703A1 (de) 2003-09-24
KR100849866B1 (ko) 2008-08-01
US7605086B2 (en) 2009-10-20
US20100003826A1 (en) 2010-01-07
US20070012657A1 (en) 2007-01-18
EP1345703B1 (de) 2010-02-03
KR20080052687A (ko) 2008-06-11
US7128804B2 (en) 2006-10-31
CN1487858A (zh) 2004-04-07
KR20030066785A (ko) 2003-08-09

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