KR20080052687A - 반도체 처리 장비의 내부식성 컴포넌트 및 그 제조방법 - Google Patents

반도체 처리 장비의 내부식성 컴포넌트 및 그 제조방법 Download PDF

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Publication number
KR20080052687A
KR20080052687A KR1020087010408A KR20087010408A KR20080052687A KR 20080052687 A KR20080052687 A KR 20080052687A KR 1020087010408 A KR1020087010408 A KR 1020087010408A KR 20087010408 A KR20087010408 A KR 20087010408A KR 20080052687 A KR20080052687 A KR 20080052687A
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KR
South Korea
Prior art keywords
liquid crystal
plasma
crystal polymer
gas
chamber
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Ceased
Application number
KR1020087010408A
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English (en)
Korean (ko)
Inventor
로버트 제이. 오도넬
크리스토퍼 씨. 창
존 이. 도어티
Original Assignee
램 리써치 코포레이션
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Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20080052687A publication Critical patent/KR20080052687A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
KR1020087010408A 2000-12-29 2001-11-21 반도체 처리 장비의 내부식성 컴포넌트 및 그 제조방법 Ceased KR20080052687A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/749,921 US7128804B2 (en) 2000-12-29 2000-12-29 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
US09/749,921 2000-12-29

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020037008853A Division KR100849866B1 (ko) 2000-12-29 2001-11-21 반도체 처리 장비의 내부식성 컴포넌트 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR20080052687A true KR20080052687A (ko) 2008-06-11

Family

ID=25015771

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020087010408A Ceased KR20080052687A (ko) 2000-12-29 2001-11-21 반도체 처리 장비의 내부식성 컴포넌트 및 그 제조방법
KR1020037008853A Expired - Fee Related KR100849866B1 (ko) 2000-12-29 2001-11-21 반도체 처리 장비의 내부식성 컴포넌트 및 그 제조방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020037008853A Expired - Fee Related KR100849866B1 (ko) 2000-12-29 2001-11-21 반도체 처리 장비의 내부식성 컴포넌트 및 그 제조방법

Country Status (9)

Country Link
US (3) US7128804B2 (enExample)
EP (1) EP1345703B1 (enExample)
JP (1) JP2004523350A (enExample)
KR (2) KR20080052687A (enExample)
CN (1) CN100434196C (enExample)
AT (1) ATE456985T1 (enExample)
DE (1) DE60141250D1 (enExample)
TW (1) TWI313304B (enExample)
WO (1) WO2002068129A1 (enExample)

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Also Published As

Publication number Publication date
CN100434196C (zh) 2008-11-19
US8486841B2 (en) 2013-07-16
CN1487858A (zh) 2004-04-07
KR20030066785A (ko) 2003-08-09
EP1345703A1 (en) 2003-09-24
DE60141250D1 (de) 2010-03-25
US20100003826A1 (en) 2010-01-07
US7128804B2 (en) 2006-10-31
JP2004523350A (ja) 2004-08-05
KR100849866B1 (ko) 2008-08-01
US7605086B2 (en) 2009-10-20
US20070012657A1 (en) 2007-01-18
ATE456985T1 (de) 2010-02-15
EP1345703B1 (en) 2010-02-03
WO2002068129A1 (en) 2002-09-06
TWI313304B (en) 2009-08-11
US20020086545A1 (en) 2002-07-04

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