JP2004513516A - 拡張されたプロセスウィンドウを有する誘電体エッチングチャンバ - Google Patents

拡張されたプロセスウィンドウを有する誘電体エッチングチャンバ Download PDF

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Publication number
JP2004513516A
JP2004513516A JP2002540195A JP2002540195A JP2004513516A JP 2004513516 A JP2004513516 A JP 2004513516A JP 2002540195 A JP2002540195 A JP 2002540195A JP 2002540195 A JP2002540195 A JP 2002540195A JP 2004513516 A JP2004513516 A JP 2004513516A
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Japan
Prior art keywords
gas
chamber
liner
plasma
processing
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Pending
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JP2002540195A
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English (en)
Japanese (ja)
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JP2004513516A5 (fr
Inventor
カーデュッシ　ジェイムス　ディー
ノールバッシュ　ハミド
リー　エヴァンス　ワイ
プ　ブライヤン　ワイ
シャン　ホンクウィン
ビョルクマン　クレス
サリミアン　シアマック
ラッシャー　ポール　イー
ウェルチ　マイケル　ディー
リウ　ジンバオ
小松　威彦
ドアン　ケニー　エル
チャン　メロディー
ワン　ズーシュ
キム　ユンサン
ワン　ルイピン
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US09/704,867 external-priority patent/US6403491B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2004513516A publication Critical patent/JP2004513516A/ja
Publication of JP2004513516A5 publication Critical patent/JP2004513516A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2002540195A 2000-11-01 2001-11-01 拡張されたプロセスウィンドウを有する誘電体エッチングチャンバ Pending JP2004513516A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US70497200A 2000-11-01 2000-11-01
US09/704,867 US6403491B1 (en) 2000-11-01 2000-11-01 Etch method using a dielectric etch chamber with expanded process window
PCT/US2001/046012 WO2002037541A2 (fr) 2000-11-01 2001-11-01 Chambre de gravure dielectrique a fenetre de traitement expansee

Publications (2)

Publication Number Publication Date
JP2004513516A true JP2004513516A (ja) 2004-04-30
JP2004513516A5 JP2004513516A5 (fr) 2007-09-13

Family

ID=27107394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002540195A Pending JP2004513516A (ja) 2000-11-01 2001-11-01 拡張されたプロセスウィンドウを有する誘電体エッチングチャンバ

Country Status (5)

Country Link
EP (1) EP1334514A2 (fr)
JP (1) JP2004513516A (fr)
KR (1) KR100887014B1 (fr)
TW (1) TW588401B (fr)
WO (1) WO2002037541A2 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008103681A (ja) * 2006-08-01 2008-05-01 Applied Materials Inc チャンバコンポーネントを結合するための自己不動態化耐プラズマ材料
JP2014532989A (ja) * 2011-10-28 2014-12-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ チャンバ壁温度制御を備えたプラズマリアクタ
JP2021082788A (ja) * 2019-11-22 2021-05-27 東京エレクトロン株式会社 熱伝導性部材、プラズマ処理装置及び電圧制御方法
US11686208B2 (en) 2020-02-06 2023-06-27 Rolls-Royce Corporation Abrasive coating for high-temperature mechanical systems
JP7467541B2 (ja) 2017-03-08 2024-04-15 アプライド マテリアルズ インコーポレイテッド タンデム処理領域を有するプラズマチャンバ

Families Citing this family (18)

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KR100468203B1 (ko) * 2002-08-16 2005-01-26 어댑티브프라즈마테크놀로지 주식회사 플라즈마 에칭시스템에 구비된 돔의 온도제어장치 및 그방법
US7140374B2 (en) 2003-03-14 2006-11-28 Lam Research Corporation System, method and apparatus for self-cleaning dry etch
US7009281B2 (en) * 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7959984B2 (en) * 2004-12-22 2011-06-14 Lam Research Corporation Methods and arrangement for the reduction of byproduct deposition in a plasma processing system
WO2008068567A2 (fr) * 2006-05-01 2008-06-12 Beijert Engineering Analyseur de carte sonde à circuits intégrés
US8597462B2 (en) * 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
US20140116622A1 (en) * 2012-10-31 2014-05-01 Semes Co. Ltd. Electrostatic chuck and substrate processing apparatus
TWI480417B (zh) 2012-11-02 2015-04-11 Ind Tech Res Inst 具氣幕之氣體噴灑裝置及其薄膜沉積裝置
KR101542905B1 (ko) * 2013-04-26 2015-08-07 (주)얼라이드 테크 파인더즈 반도체 장치
US9384948B2 (en) * 2013-06-13 2016-07-05 Lam Research Corporation Hammerhead TCP coil support for high RF power conductor etch systems
US9597701B2 (en) * 2013-12-31 2017-03-21 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
US10741425B2 (en) * 2017-02-22 2020-08-11 Lam Research Corporation Helium plug design to reduce arcing
CN111370281B (zh) 2018-12-26 2023-04-28 中微半导体设备(上海)股份有限公司 等离子体刻蚀装置
CN111446144B (zh) * 2019-01-17 2024-04-19 东京毅力科创株式会社 静电吸附部的控制方法和等离子体处理装置
KR102217452B1 (ko) * 2019-07-05 2021-02-22 세메스 주식회사 상부 모듈 온도 제어 장치 및 이를 구비하는 기판 처리 시스템
US11499223B2 (en) 2020-12-10 2022-11-15 Applied Materials, Inc. Continuous liner for use in a processing chamber
KR102646591B1 (ko) * 2022-05-13 2024-03-12 세메스 주식회사 기판 처리 장치

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US5155652A (en) * 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
JPH08507196A (ja) * 1994-01-31 1996-07-30 アプライド マテリアルズ インコーポレイテッド 共形な絶縁体フィルムを有する静電チャック
US5798016A (en) * 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5886863A (en) * 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US5788799A (en) * 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
EP0942060B1 (fr) * 1996-12-04 2006-01-11 Nitto Denko Corporation Adhesif autocollant conducteur thermique, feuille adhesive contenant cet adhesif, et procede de fixation d'une piece electronique a un element emettant un rayonnement thermique au moyen de cet adhesif
JP3979694B2 (ja) * 1997-01-22 2007-09-19 株式会社巴川製紙所 静電チャック装置およびその製造方法
US6166897A (en) * 1997-01-22 2000-12-26 Tomoegawa Paper Co., Ltd. Static chuck apparatus and its manufacture
JPH11176920A (ja) * 1997-12-12 1999-07-02 Shin Etsu Chem Co Ltd 静電吸着装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008103681A (ja) * 2006-08-01 2008-05-01 Applied Materials Inc チャンバコンポーネントを結合するための自己不動態化耐プラズマ材料
JP4628405B2 (ja) * 2006-08-01 2011-02-09 アプライド マテリアルズ インコーポレイテッド 半導体処理チャンバコンポーネント
JP2014532989A (ja) * 2011-10-28 2014-12-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ チャンバ壁温度制御を備えたプラズマリアクタ
JP7467541B2 (ja) 2017-03-08 2024-04-15 アプライド マテリアルズ インコーポレイテッド タンデム処理領域を有するプラズマチャンバ
JP2021082788A (ja) * 2019-11-22 2021-05-27 東京エレクトロン株式会社 熱伝導性部材、プラズマ処理装置及び電圧制御方法
JP7370228B2 (ja) 2019-11-22 2023-10-27 東京エレクトロン株式会社 プラズマ処理装置
US11686208B2 (en) 2020-02-06 2023-06-27 Rolls-Royce Corporation Abrasive coating for high-temperature mechanical systems

Also Published As

Publication number Publication date
WO2002037541A2 (fr) 2002-05-10
KR20020081240A (ko) 2002-10-26
EP1334514A2 (fr) 2003-08-13
WO2002037541A3 (fr) 2002-10-10
KR100887014B1 (ko) 2009-03-04
TW588401B (en) 2004-05-21

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