JP2004503108A - 半導体基板の熱処理 - Google Patents

半導体基板の熱処理 Download PDF

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Publication number
JP2004503108A
JP2004503108A JP2002508836A JP2002508836A JP2004503108A JP 2004503108 A JP2004503108 A JP 2004503108A JP 2002508836 A JP2002508836 A JP 2002508836A JP 2002508836 A JP2002508836 A JP 2002508836A JP 2004503108 A JP2004503108 A JP 2004503108A
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JP
Japan
Prior art keywords
purge gas
substrate
heat treatment
treatment system
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002508836A
Other languages
English (en)
Japanese (ja)
Inventor
ボアス，　ライアン，　シー．
バラクリシュナ，　アジト
ビーアマン，　ベンジャミン
ハース，　ブライアン，　エル．
ジェニングズ，　ディーン
アダーホールド，　ウォルフガング
ラママーシー，　サンダー
マユール，　アブヒラシュ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/611,349 external-priority patent/US6803546B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2004503108A publication Critical patent/JP2004503108A/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
JP2002508836A 2000-07-06 2001-07-03 半導体基板の熱処理 Pending JP2004503108A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/611,349 US6803546B1 (en) 1999-07-08 2000-07-06 Thermally processing a substrate
PCT/US2001/021154 WO2002005323A2 (fr) 2000-07-06 2001-07-03 Traitement thermique de substrat

Publications (1)

Publication Number Publication Date
JP2004503108A true JP2004503108A (ja) 2004-01-29

Family

ID=24448674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002508836A Pending JP2004503108A (ja) 2000-07-06 2001-07-03 半導体基板の熱処理

Country Status (5)

Country Link
EP (1) EP1297560A2 (fr)
JP (1) JP2004503108A (fr)
KR (1) KR100838874B1 (fr)
CN (1) CN1279577C (fr)
WO (1) WO2002005323A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013021113A (ja) * 2011-07-11 2013-01-31 Nuflare Technology Inc 気相成長装置および気相成長方法
JP2019210522A (ja) * 2018-06-05 2019-12-12 東京エレクトロン株式会社 成膜方法及び成膜装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6803546B1 (en) * 1999-07-08 2004-10-12 Applied Materials, Inc. Thermally processing a substrate
US8980767B2 (en) * 2012-01-13 2015-03-17 Applied Materials, Inc. Methods and apparatus for processing a substrate
WO2017116708A1 (fr) * 2015-12-30 2017-07-06 Mattson Technology, Inc. Caractéristiques permettant d'améliorer l'uniformité de processus dans un système de recuit milliseconde
KR102010329B1 (ko) * 2017-08-04 2019-10-15 주식회사 디엠에스 기판처리장치 및 이를 이용한 인라인 기판처리시스템
CN114045470B (zh) * 2021-12-31 2022-09-30 西安奕斯伟材料科技有限公司 一种用于常压外延反应腔室的清洁方法及外延硅片

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62282437A (ja) * 1986-05-31 1987-12-08 Shinku Riko Kk 半導体ウエハ処理用急速加熱冷却装置
JPH02240923A (ja) * 1989-03-15 1990-09-25 Hitachi Ltd 真空処理方法及び装置
JPH05197953A (ja) * 1991-09-20 1993-08-06 Intevac Inc 排気環境下で基板を冷却するシステム
JPH10144628A (ja) * 1996-07-12 1998-05-29 Applied Materials Inc 薄膜の改良堆積法
JPH10172977A (ja) * 1996-12-11 1998-06-26 Sumitomo Electric Ind Ltd 化合物半導体基板の熱処理方法及び熱処理装置
JPH10199824A (ja) * 1997-01-14 1998-07-31 Japan Storage Battery Co Ltd 紫外線処理装置
JP2000505961A (ja) * 1996-12-20 2000-05-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 急速熱処理用炉
WO2000031777A1 (fr) * 1998-11-20 2000-06-02 Steag Rtp Systems, Inc. Appareil a chauffage et a refroidissement rapides pour galettes de semi-conducteurs
JP2001250788A (ja) * 1999-12-23 2001-09-14 Asm Internatl Nv 半導体ウェハ処理装置
JP2001297995A (ja) * 2000-04-13 2001-10-26 Nec Corp 回路製造方法および装置
JP2001308023A (ja) * 2000-04-21 2001-11-02 Tokyo Electron Ltd 熱処理装置及び方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818327A (en) * 1987-07-16 1989-04-04 Texas Instruments Incorporated Wafer processing apparatus
US5620525A (en) * 1990-07-16 1997-04-15 Novellus Systems, Inc. Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
TW277139B (fr) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
US5676205A (en) * 1993-10-29 1997-10-14 Applied Materials, Inc. Quasi-infinite heat source/sink
US5620560A (en) * 1994-10-05 1997-04-15 Tokyo Electron Limited Method and apparatus for heat-treating substrate
US6046439A (en) * 1996-06-17 2000-04-04 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
NL1003538C2 (nl) * 1996-07-08 1998-01-12 Advanced Semiconductor Mat Werkwijze en inrichting voor het contactloos behandelen van een schijfvormig halfgeleidersubstraat.
US6054688A (en) * 1997-06-25 2000-04-25 Brooks Automation, Inc. Hybrid heater with ceramic foil serrated plate and gas assist
US6803546B1 (en) * 1999-07-08 2004-10-12 Applied Materials, Inc. Thermally processing a substrate

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62282437A (ja) * 1986-05-31 1987-12-08 Shinku Riko Kk 半導体ウエハ処理用急速加熱冷却装置
JPH02240923A (ja) * 1989-03-15 1990-09-25 Hitachi Ltd 真空処理方法及び装置
JPH05197953A (ja) * 1991-09-20 1993-08-06 Intevac Inc 排気環境下で基板を冷却するシステム
JPH10144628A (ja) * 1996-07-12 1998-05-29 Applied Materials Inc 薄膜の改良堆積法
JPH10172977A (ja) * 1996-12-11 1998-06-26 Sumitomo Electric Ind Ltd 化合物半導体基板の熱処理方法及び熱処理装置
JP2000505961A (ja) * 1996-12-20 2000-05-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 急速熱処理用炉
JPH10199824A (ja) * 1997-01-14 1998-07-31 Japan Storage Battery Co Ltd 紫外線処理装置
WO2000031777A1 (fr) * 1998-11-20 2000-06-02 Steag Rtp Systems, Inc. Appareil a chauffage et a refroidissement rapides pour galettes de semi-conducteurs
JP2001250788A (ja) * 1999-12-23 2001-09-14 Asm Internatl Nv 半導体ウェハ処理装置
JP2001297995A (ja) * 2000-04-13 2001-10-26 Nec Corp 回路製造方法および装置
JP2001308023A (ja) * 2000-04-21 2001-11-02 Tokyo Electron Ltd 熱処理装置及び方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013021113A (ja) * 2011-07-11 2013-01-31 Nuflare Technology Inc 気相成長装置および気相成長方法
JP2019210522A (ja) * 2018-06-05 2019-12-12 東京エレクトロン株式会社 成膜方法及び成膜装置
KR20190138587A (ko) * 2018-06-05 2019-12-13 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치
KR102214217B1 (ko) * 2018-06-05 2021-02-08 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치
JP7018825B2 (ja) 2018-06-05 2022-02-14 東京エレクトロン株式会社 成膜方法及び成膜装置

Also Published As

Publication number Publication date
CN1279577C (zh) 2006-10-11
KR20030014322A (ko) 2003-02-15
EP1297560A2 (fr) 2003-04-02
KR100838874B1 (ko) 2008-06-16
WO2002005323A3 (fr) 2002-06-20
CN1447980A (zh) 2003-10-08
WO2002005323A2 (fr) 2002-01-17

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