WO2002005323A2 - Traitement thermique de substrat - Google Patents

Traitement thermique de substrat Download PDF

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Publication number
WO2002005323A2
WO2002005323A2 PCT/US2001/021154 US0121154W WO0205323A2 WO 2002005323 A2 WO2002005323 A2 WO 2002005323A2 US 0121154 W US0121154 W US 0121154W WO 0205323 A2 WO0205323 A2 WO 0205323A2
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WO
WIPO (PCT)
Prior art keywords
purge gas
substrate
thermal
processing system
thermal processing
Prior art date
Application number
PCT/US2001/021154
Other languages
English (en)
Other versions
WO2002005323A3 (fr
Inventor
Ryan C. Boas
Ajit Balakrishna
Benjamin Bierman
Brian L. Haas
Dean Jennings
Wolfgang Aderhold
Sundar Ramamurthy
Abhilash Mayur
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/611,349 external-priority patent/US6803546B1/en
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2002508836A priority Critical patent/JP2004503108A/ja
Priority to EP01952404A priority patent/EP1297560A2/fr
Priority to KR1020037000152A priority patent/KR100838874B1/ko
Publication of WO2002005323A2 publication Critical patent/WO2002005323A2/fr
Publication of WO2002005323A3 publication Critical patent/WO2002005323A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Definitions

  • the invention relates to systems and methods of thermally processing a substrate.
  • Substrate processing systems are used to fabricate semiconductor logic and memory devices, flat panel displays, CD ROMs, and other devices. During processing, such substrates may be subjected to chemical vapor deposition (CVD) and rapid thermal processes (RTP) .
  • RTP processes include, for example, rapid thermal annealing (RTA) , rapid thermal cleaning (RTC) , rapid thermal CVD (RTCVD) , rapid thermal oxidation (RTO) , and rapid thermal nitridation (RTN) .
  • RTP systems usually include a heating element formed from one or more lamps which radiatively heat the substrate through a light-transmissive window.
  • RTP systems may also include one or more other optical elements, such as an optically reflective surface facing the backside of the substrate and one or more optical detectors for measuring the temperature of the substrate during processing. Many rapid thermal processes require precise control of substrate temperature over time.
  • the invention features a thermal processing method in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or both. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate.
  • a thermal reservoir e.g., a water-cooled reflector plate assembly
  • the substrate is heated in accordance with a heating schedule and, during the heating schedule, the rate of heat transfer between the substrate and a thermal reservoir inside the thermal processing system is changed.
  • the results of certain thermal processing methods are improved if the rates at which substrates are heated or cooled inside the thermal processing system are high.
  • the rate at which heat is transferred between a substrate and a thermal reservoir inside the processing chamber during the thermal process the heat-up phase or the cool-down phase, or both phases, may be optimized to improve the quality of the devices produced. Temperature uniformity across the substrate is also improved.
  • Fig. 1 is a diagrammatic side view of a portion of a thermal processing system, including a reflector plate assembly and a fluid injector.
  • Fig. 2A is a flow diagram of a method of processing a substrate.
  • Fig. 2B contains plots of substrate temperature over time during a spike anneal thermal process using a helium purge gas and during a spike anneal thermal process using a nitrogen purge gas .
  • Fig. 2C is a graphical representation illustrating substrate temperature uniformity for an optimized cool-down process .
  • Figs . 3A and 3B are exploded views of the reflector plate assembly and the fluid injector shown in Fig. 1.
  • Fig. 3C is a diagrammatic top view of the reflector plate assembly and the fluid injector of Fig. 1; features of the bottom reflector plate are shown using dashed lines.
  • Fig. 4 is a diagrammatic view of a purge gas control system of the substrate processing system of Fig. 1.
  • Fig. 5 is a diagrammatic top view of an alternative fluid injector.
  • Figs. 6A and 6B are diagrammatic side and top views of a portion of an alternative fluid injector, respectively.
  • Figs. 7A and 7B are diagrammatic side and top views of a portion of an alternative fluid injector, respectively.
  • Fig. 8A and 8B are diagrammatic side and top views of another fluid injector, respectively.
  • a system 10 for processing a substrate 12 includes a processing chamber 14 that is radiatively heated by a water-cooled heating lamp assembly 16 through a quartz window 18.
  • the peripheral edge of substrate 12 is supported by a rotatable support structure 20, which can rotate at a rate of up to about 300 rpm (revolutions per minute) .
  • Beneath substrate 12 is a reflector plate assembly 22 that acts as a thermal reservoir and has an optically reflective surface facing the backside of substrate 12 to enhance the effective emissivity of substrate 12.
  • a reflective cavity 15 is formed between substrate 12 and the top surface of reflector plate assembly 22.
  • reflector plate assembly In a system designed for processing eight-inch (200 mm (millimeter) ) silicon wafers, reflector plate assembly has a diameter of about 8.9 inches, the separation between substrate 12 and the top surface of reflector plate assembly 22 is about 5-10 mm, and the separation between substrate 12 and quartz window 18 is about 25 mm.
  • Reflector plate assembly 22 is mounted on a water-cooled base 23, which is typically maintained at a temperature of about 23 °C.
  • the temperatures at localized regions of substrate 12 are measured by a plurality of temperature probes 24 which are positioned to measure substrate temperature at different radial locations across the substrate. Temperature probes 24 receive light from inside the processing chamber through optical ports 25, 26, and 27, which extend through the top surface of reflector plate assembly 22. Processing system 10 may have a total of ten temperature probes, only three probes are shown in Fig. 1. More typically, for a 200 mm substrate, five temperature probes are used, and for a 300 mm substrate, seven temperature probes are used.
  • each optical port may have a diameter of about 0.08 inch.
  • Sapphire light pipes deliver the light received by the optical ports to respective optical detectors (for example, pyrometers) , which are used to determine the temperature at the localized regions of substrate 12. Temperature measurements from the optical detectors are received by a controller 28 that controls the radiative output of heating lamp assembly 16; the resulting feedback loop improves the ability of the processing system to uniformly heat substrate 12.
  • controller 28 controls the radiative output of heating lamp assembly 16; the resulting feedback loop improves the ability of the processing system to uniformly heat substrate 12.
  • a process gas 39 may be supplied into processing chamber 14 through a gas input 30.
  • the process gas flows across the top surface of substrate 12 and reacts with a heated substrate to form, for example, an oxide layer or a nitride layer.
  • Excess process gas, as well as any volatile reaction by-products (such as oxides given off by the substrate) , are withdrawn from processing chamber 14 though a gas output 32 by a pump system 34.
  • a purge gas e.g., nitrogen
  • the purge gas flows across the top surface of substrate 12 to entrain volatile contaminants inside processing chamber 14.
  • a purge fluid injector 40 produces a substantially laminar flow of a purge gas 42 across the top surface of reflector plate assembly 22.
  • Purge gas 42 is removed from reflective cavity 15 though an exhaust port 44, which may have a diameter of about 0.375 inch and may be located about 2 inches from ' the central axis of reflector plate assembly 22.
  • purge gas is injected into a purge gas input 46 and is distributed through a plurality of channels 48 in reflector plate assembly 22.
  • the purge gas is then directed against a deflector 50, which is spaced above the top surface of reflector assembly 22 by a distance, for example, of about 0.01 inch (0.25 mm), to produce the substantially laminar flow of purge gas 42.
  • an ultra- shallow junction may be formed in an impurity-doped semiconductor substrate as follows.
  • the substrate is loaded into thermal processing chamber 14 (step 200) .
  • a first purge gas e.g., nitrogen
  • thermal processing chamber 14 step 200
  • a first purge gas e.g., nitrogen
  • the substrate is heated to an initial temperature of about 700°C by heating lamp assembly 16 (step 204).
  • heating lamp assembly 16 begins to heat the substrate to a target peak temperature of, for example, about 1000°C orll00°C (step 206).
  • a second purge gas e.g., helium
  • the helium purge gas may be initiated just before the target temperature is reached so that reflective cavity 15, defined between the substrate and reflector assembly 22, is filled with the second purge gas by the time the substrate has been heated to the target temperature. If the first purge gas is being supplied by purge fluid injector 40 during the heat-up phase, the purge gas supply is switched from the first purge gas to the second purge gas at or near time ti. After the substrate has cooled below a threshold temperature (e.g., below 800°C) , the substrate is removed from thermal processing chamber 14 (step 210) .
  • a threshold temperature e.g., below 800°C
  • the second purge gas can be supplied to reflective cavity
  • the second purge gas flow is initiated about one to two seconds before the target temperature is reached, or the flow can be started about one to one and a half seconds before the target temperature is reached.
  • the actual time period selected is dependent on the system used to introduce the second purge gas into the reflective cavity (see Fig. 4) .
  • the second purge gas replaces the first purge gas in reflective cavity 15, if present, as the first purge gas flow is stopped and that gas is exhausted from the reflective cavity via exhaust port 44.
  • the second purge gas may be introduced into reflective cavity 15 during any cool-down phase of a thermal process.
  • the second purge gas may be supplied into reflective cavity 15 during the cool-down phase following a thermal soak period of a thermal process.
  • the inventors have realized that by changing the rate at which heat is transferred between a substrate and a thermal reservoir inside the processing chamber during the thermal process, the heat-up phase or the cool-down phase, or both phases, may be optimized to improve the quality of the devices produced.
  • the rate at which the substrate is cooled may be substantially increased by proper selection of the purge gas supplied between substrate 12 and a thermal reservoir (e.g., water-cooled reflector plate assembly 22) inside processing system 10.
  • a purge gas with a relatively high thermal conductivity e.g., helium, hydrogen, or a combination of these gases
  • a purge gas with a relatively high thermal conductivity may increase the cool-down rate of the substrate and, thereby, improve the operating characteristics or processing yield of certain devices (e.g., ultra-shallow junction transistors).
  • the rate at which the substrate cools is substantially greater when a helium purge gas is supplied into reflective cavity 15 than when a purge gas (e.g., nitrogen) with a lower thermal conductivity is used.
  • the substrate temperature has cooled down from about 1100°C to about 650°C with a helium purge gas, whereas the substrate temperature has cooled down to only about 800 °C in the same amount of time with a nitrogen purge gas.
  • a purge gas with a relatively low thermal conductivity e.g., nitrogen, argon, xenon or a combination of two or more of these gases
  • the overall thermal budget i.e., the integral of substrate temperature T(t) over a fixed period of time: JT(t)-dt -- may be reduced. This improves the quality of certain devices produced by such a thermal process.
  • the rate (standard liters per minute (slm))at which the second purge gas (e.g., helium) is exhausted from the reflective cavity should be optimized for the most effective cool-down rate. If the exhaust rate is too large, the helium purge gas will flow out of the chamber too fast, preventing effective thermal coupling between the substrate and the reflector plate assembly. On the other hand, if the exhaust rate is too small the helium purge gas flow will take too long to reach the center region of the substrate, resulting in faster cooling of the peripheral portion of the substrate. This can create significant thermal stresses which can cause effects in the substrate .
  • the second purge gas e.g., helium
  • the rate at which the second purge gas is injected into the reflective cavity is advantageously approximately equal to the rate at which that gas is exhausted from the reflective cavity. This has been found by the inventors to substantially reduce thermal gradients in the substrate during a cool-down operation, inhibiting the formation of defects in the substrate.
  • the inventors have found that the second purge gas flow into the reflective cavity during cool-down is advantageously as high as possible during, for example, a spike anneal operation. This ensures that the maximum instantaneous ramp-down rate, Max dT/dt (C° /second (s) ) , and the time the substrate is at the target temperature are optimized for ultra- shallow junction formation.
  • the temperature uniformity (Max ⁇ (°C)) across the substrate is optimized during cool-down, when the injection rate and the exhaust rate of the second purge gas are substantially equal (Run F) .
  • the Max ⁇ data represents the difference between the highest and lowest temperature readings produced by five optical detectors which measure the substrate temperature at five different radial locations. As can be seen, Max ⁇ is the lowest, and thus temperature uniformity across the substrate is at its best, when the purge gas flow in substantially equals the purge gas flow out.
  • the data also shows that the maximum instantaneous ramp- down rate and the time the substrate is at the target temperature (Time>1000°C (s) ) are optimized when the second purge gas flow is relatively high (Run F) . That is, the time the substrate is at the target temperature is minimized when the purge gas flow in the reflective cavity is relatively high.
  • Fig. 2C graphically compares certain data from Run A to Run F.
  • Curves AA and AB represent the temperature readings for the optical detectors at the substrate center and substrate edge for Run A
  • curves FA and FB represent the temperature readings for the optical detectors at the substrate center and substrate edge for Run F.
  • Curves AC and FC show the temperature uniformity (Max ⁇ ) across the substrate for Runs A and F, respectively. As can be seen, the temperature uniformity is optimized when the second purge gas flow in is substantially equal to the second purge gas flow out.
  • reflector plate assembly 22 includes a deflector ring 52, a top reflector plate 54, and a bottom reflector plate 56.
  • Bottom reflector plate 56 has a horizontal channel 58 for receiving purge gas from input 46 and for delivering the purge gas to a vertical channel 60, which communicates with a plurality of horizontal channels 48 in top reflector plate 54.
  • Horizontal channels 48 distribute the purge gas to different locations at the periphery of top reflector plate 54.
  • Deflector ring 52 includes a peripheral wall 62 which rests on a lower peripheral edge 64 of bottom reflector plate 56 and, together with the peripheral wall of top reflector plate 54, defines a 0.0275 inch wide vertical channel which directs the purge gas flow against deflector 50 to produce the substantially laminar flow of purge gas across the top surface of reflector plate 54.
  • the purge gas and any entrained volatile contaminants are removed from the processing chamber through exhaust port 44.
  • a horizontal channel 66 in bottom reflector plate 56 receives the exhausted gas from exhaust port 44 and directs the exhausted gas to a line 68 that is connected to a pump system.
  • Each of the channels 48, 58, and 60 may have a cross-sectional flow area of about 0.25 inch by about 0.1 inch.
  • a purge gas may be introduced into reflective cavity 15 at the top surface of top reflector plate 54 along a peripheral arc of about 75°.
  • the resulting substantially laminar flow of purge gas ' 42 extends over a region of the top surface of top reflector plate 54 corresponding to the 75° sector 70, which includes nine of the ten optical ports in top reflector plate 54 (including optical ports 25, 26, and 27).
  • a high thermal conductivity purge gas 42 e.g., helium or hydrogen
  • increases the thermal conductivity between substrate 12 and reflector assembly 22 during the cool-down phase of a rapid thermal process e.g., between times ti and t 2 ; Fig. 2B
  • a mass flow controller 80 is used to regulate the flow of gas into processing chamber 14 through gas input 30, and a pressure transducer 82 and a pressure control valve 84 are used to regulate the rate at which gas is removed from processing chamber 14 through gas output 32.
  • Purge gas is introduced into reflective cavity 15 through input 46 which is connected to a filter 86.
  • a mass flow controller 88 is used to regulate the flow of purge gas into reflective cavity 15 through purge gas injector 40.
  • An adjustable flow restrictor 90 and a mass flow controller 92 are used to regulate the rate at which purge gas is removed from reflective cavity 15.
  • flow restrictor 90 is adjusted until the rate at which purge gas is introduced into reflective cavity 15 is substantially the same as the rate at which purge gas is removed from reflective cavity 15.
  • Solenoid shut-off valves 94 and 96 provide additional control over the flow of purge gas through reflective cavity 15.
  • purge gas may be flowed through reflective cavity 15 at a rate of about 9-20 slm (standard liters per minute) , although the purge gas flow rate may vary depending upon the pressure inside reflective cavity 15 and the pumping capacity of pump system 34.
  • the pressure inside reflective cavity 15 and processing chamber 14 may be about 850 torr.
  • Purge gas may be supplied into reflective cavity 15 in a variety of different ways.
  • a reflector plate assembly 100 is similar in construction to reflector plate assembly 22, except reflector plate assembly 100 is designed to introduce a purge gas 102 from different locations around the entire periphery of a top reflector plate 104. Purge gas 102 is removed through an exhaust port 106 that extends through top reflector plate 104. Purge gas 102 may be introduced at locations about 4.33 inches from the center of reflector plate 102, and exhaust port 106 may be located about 2 inches from the center of reflector plate 102. This embodiment may be used when optical ports 108 are distributed over the entire surface of reflector plate 102.
  • a reflector plate assembly 110 is also similar in construction to reflector plate assembly 22, except reflector plate assembly 110 includes a deflector plate 112 and a top reflector plate 114 that together define flow channels for producing a substantially laminar flow of purge gas in circumferential regions 116-122 surrounding optical ports 124 and 126.
  • the purge gas flows through vertical annular channels 128, 129 in top reflector plate 114.
  • the purge gas may be exhausted through an exhaust port (not shown) that extends through top reflector plate 114; the purge gas may alternatively be exhausted over the circumferential edge of reflector plate assembly 110.
  • the top surface of deflector plate 112 acts as the primary optically reflective surface that faces the backside of the substrate. Deflector' plate 112 may be spaced above top reflector plate 114 by a distance of 0.01 inch (0.25 mm).
  • a reflector plate assembly 130 includes a vertical channel 132 for receiving a flow of a purge gas, and a slot-shaped deflector 134 for deflecting the flow of purge gas 136 as a rectangular curtain across an optical port 138 that extends through a reflector plate 140.
  • a slot-shaped exhaust port 142 is used to remove purge gas 136.
  • Deflector 134 may be spaced above the top surface of reflector plate 140 by a distance of about 0.01 inch (0.25 mm) .
  • a reflector plate assembly 150 may include a plurality of orifices 152, 154, 156 which are coupled to a common gas plenum 158 which, in turn, is coupled to a purge gas input 160.
  • Orifices 152-156 are arranged to uniformly introduce purge gas into the reflector cavity defined between substrate 12 and reflector plate assembly 150.
  • Orifices 152-156 also are arranged to accommodate the locations of optical ports 25-27 through which temperature probes 24 receive light emitted by substrate 12.
  • the purge gas flows into the reflector cavity at a flow rate of about 9-20 slm; in general, the flow rate should be less than the rate required to lift substrate 12 off of support structure 20.
  • Purge gas is removed from the reflector cavity by a pump system 162 through an exhaust port 164.
  • purge gas may be supplied by the rotating gas delivery system described in U.S. Application Serial No. 09/287,947, filed April 7, 1999, and entitled “Apparatus and Methods for Thermally Processing a Substrate,” which is incorporated herein by reference.
  • thermal reservoir may be positioned at a different location inside thermal processing system 10. Two or more independent thermal reservoirs may be provided.
  • the thermal reservoir may include a relatively hot surface, and different purge gases may be supplied into reflective cavity 15, which is defined between the thermal reservoir and the substrate, to control the temperature response of the substrate.
  • the temperature of the thermal reservoir may be changed during the thermal process to improve the temperature response of the substrate.
  • the rate of heat transfer between a substrate and a thermal reservoir inside processing system 10 may be optimized by changing the emissivity of the thermal reservoir during the thermal process.
  • the top surface of reflector plate assembly 22 may include an electro- chromic coating with a reflectivity that may be selectively varied by changing the voltage applied across the coating.
  • the reflectivity of reflection plate assembly 22 may be maximized during the heat-up phase of a thermal process, and the reflectivity may be minimized during the cool-down phase. In this way, the rate of heat transfer between the substrate and reflector plate assembly 22 may be decreased during the heat-up phase and increased during the cool-down phase.
  • the rate of heat transfer between a substrate and a thermal reservoir inside processing system 10 may be optimized by changing the distance separating the substrate from the thermal reservoir.
  • support structure 20 may be configured to move up and down relative to the top surface of reflector plate assembly 22.
  • support structure 20 may position the substrate a relatively far distance from reflector plate assembly 22 during the heat-up phase of a thermal process, and support structure 20 may position the substrate a relatively close distance from reflector plate assembly 22 during the cool- down phase of the thermal process.
  • the thermal conductivity between the substrate and reflector plate assembly 22 may be reduced during the heat-up phase of the thermal process and may be increased during the cool-down phase to improve the quality of devices produced on the substrate.
  • the rate of heat transfer between a substrate and a thermal reservoir inside processing system 10 may be optimized by changing the pressure of a purge gas between the substrate and the thermal reservoir during a thermal process.
  • the pressure of the purge gas may be reduced to a sub- atmospheric pressure (e.g., 1-5 Torr), and during a cool-down phase of the thermal process the pressure may be increased to atmospheric pressure (770 Torr) .
  • the composition of the purge gas also may be changed during the thermal process.
  • the purge gas may consist of nitrogen
  • the purge gas may consist of helium.
  • the invention may enable certain devices (e.g., ultra-shallow junction transistors) to be formed with improved physical features and improved operating characteristics.

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Abstract

La présente invention concerne une technique de traitement thermique dans laquelle une réponse de température d'un substrat peut être commandée durant une phase de chauffage ou de refroidissement, ou durant ces deux phases. Cette technique réduit le budget thermique du substrat et améliore la qualité et les performances des dispositifs formés sur ce substrat. En particulier, la réponse de température de ce substrat peut être commandée pendant le processus thermique par une commande du débit du transfert de chaleur entre le substrat et un réservoir thermique (par exemple un ensemble plaque de réflexion refroidie par eau). On peut modifier le débit du transfert de chaleur en changeant la conductivité thermique entre le substrat et le réservoir thermique, en changeant le pouvoir d'émission d'une surface de ce réservoir thermique ou en modifiant la distance entre ce substrat et le réservoir thermique. On peut modifier la conductivité thermique en changeant les caractéristiques d'un milieu de transport thermique (par exemple un gaz de purge) situé entre le substrat et le réservoir thermique. On peut, par exemple, modifier la conductivité thermique en changeant la composition du gaz de purge ou la pression de ce gaz de purge entre le substrat et le réservoir thermique. Dans un mode de réalisation de l'invention, le substrat est chauffé conformément à un programme de chauffage et, durant ce programme, le débit du transfert de chaleur entre ce substrat et un réservoir thermique positionné à l'intérieur du système de traitement thermique est modifié. Dans un autre mode de réalisation de l'invention, on fournit un premier gaz de purge dans le système de traitement thermique, le substrat est chauffé conformément à un programme de chauffage, et on fournit un second gaz de purge différent du premier dans ce système de traitement thermique.
PCT/US2001/021154 2000-07-06 2001-07-03 Traitement thermique de substrat WO2002005323A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002508836A JP2004503108A (ja) 2000-07-06 2001-07-03 半導体基板の熱処理
EP01952404A EP1297560A2 (fr) 2000-07-06 2001-07-03 Traitement thermique de substrat
KR1020037000152A KR100838874B1 (ko) 2000-07-06 2001-07-03 기판을 열 처리하는 시스템 및 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/611,349 US6803546B1 (en) 1999-07-08 2000-07-06 Thermally processing a substrate
US09/611,349 2000-07-06

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WO2002005323A2 true WO2002005323A2 (fr) 2002-01-17
WO2002005323A3 WO2002005323A3 (fr) 2002-06-20

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EP (1) EP1297560A2 (fr)
JP (1) JP2004503108A (fr)
KR (1) KR100838874B1 (fr)
CN (1) CN1279577C (fr)
WO (1) WO2002005323A2 (fr)

Cited By (2)

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US10770309B2 (en) 2015-12-30 2020-09-08 Mattson Technology, Inc. Features for improving process uniformity in a millisecond anneal system

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KR20030014322A (ko) 2003-02-15
KR100838874B1 (ko) 2008-06-16
EP1297560A2 (fr) 2003-04-02
WO2002005323A3 (fr) 2002-06-20
CN1279577C (zh) 2006-10-11
CN1447980A (zh) 2003-10-08
JP2004503108A (ja) 2004-01-29

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