JP2004342719A - 半導体レーザ装置及びその製造方法 - Google Patents

半導体レーザ装置及びその製造方法 Download PDF

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Publication number
JP2004342719A
JP2004342719A JP2003135408A JP2003135408A JP2004342719A JP 2004342719 A JP2004342719 A JP 2004342719A JP 2003135408 A JP2003135408 A JP 2003135408A JP 2003135408 A JP2003135408 A JP 2003135408A JP 2004342719 A JP2004342719 A JP 2004342719A
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Prior art keywords
semiconductor laser
laser device
layer
cladding layer
conductivity type
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JP2003135408A
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English (en)
Japanese (ja)
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JP2004342719A5 (enExample
Inventor
Akira Tanaka
明 田中
Yoshiyuki Ito
義行 伊藤
Osamu Horiuchi
理 堀内
Akio Makuta
章雄 幕田
Koichi Kuronaga
康一 玄永
Hideo Shiozawa
秀夫 塩澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Development and Engineering Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Engineering Co Ltd
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Application filed by Toshiba Corp, Toshiba Electronic Engineering Co Ltd filed Critical Toshiba Corp
Priority to JP2003135408A priority Critical patent/JP2004342719A/ja
Priority to US10/845,666 priority patent/US7221692B2/en
Priority to TW093113784A priority patent/TWI236790B/zh
Publication of JP2004342719A publication Critical patent/JP2004342719A/ja
Publication of JP2004342719A5 publication Critical patent/JP2004342719A5/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0658—Self-pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/3436—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Geometry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)
JP2003135408A 2003-05-14 2003-05-14 半導体レーザ装置及びその製造方法 Pending JP2004342719A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003135408A JP2004342719A (ja) 2003-05-14 2003-05-14 半導体レーザ装置及びその製造方法
US10/845,666 US7221692B2 (en) 2003-05-14 2004-05-13 Semiconductor laser device and its manufacturing method
TW093113784A TWI236790B (en) 2003-05-14 2004-05-14 Semiconductor laser device and its manufacturing method

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JP2003135408A JP2004342719A (ja) 2003-05-14 2003-05-14 半導体レーザ装置及びその製造方法

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JP2004342719A true JP2004342719A (ja) 2004-12-02
JP2004342719A5 JP2004342719A5 (enExample) 2005-06-23

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006295072A (ja) * 2005-04-14 2006-10-26 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
JP2007280989A (ja) * 2006-04-03 2007-10-25 Nec Electronics Corp 半導体レーザ及びその製造方法
JP2008021705A (ja) * 2006-07-11 2008-01-31 Nec Electronics Corp 自励発振型半導体レーザとその製造方法
JPWO2006077766A1 (ja) * 2005-01-18 2008-06-19 松下電器産業株式会社 半導体レーザ装置及びその製造方法
JP2020021865A (ja) * 2018-08-02 2020-02-06 日本ルメンタム株式会社 半導体光素子及び光送受信モジュール

Families Citing this family (11)

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KR20060055696A (ko) * 2004-11-18 2006-05-24 삼성전기주식회사 반도체 레이저 제조방법
KR100674835B1 (ko) * 2005-02-28 2007-01-26 삼성전기주식회사 다파장 반도체 레이저 제조방법
JP5379002B2 (ja) * 2007-07-17 2013-12-25 株式会社Ｑｄレーザ 半導体レーザ及びその製造方法
JP5385526B2 (ja) * 2007-11-16 2014-01-08 ローム株式会社 半導体レーザ
CN101820136A (zh) * 2010-04-21 2010-09-01 中国科学院半导体研究所 高功率非对称宽波导980nm半导体激光器结构
JP2018519666A (ja) * 2015-06-30 2018-07-19 フォルシュングスフェアブント ベルリン エー ファウＦｏｒｓｃｈｕｎｇｓｖｅｒｂｕｎｄ Ｂｅｒｌｉｎ ｅ．Ｖ． 分布帰還型レーザーダイオード及びその製造方法
WO2019193622A1 (ja) * 2018-04-02 2019-10-10 三菱電機株式会社 半導体光素子、半導体光集積素子、および半導体光素子の製造方法
CN111286901A (zh) * 2020-02-28 2020-06-16 安徽豹子头服饰有限公司 一种袖口定型装置
CN115210976B (zh) * 2020-03-16 2025-02-25 三菱电机株式会社 半导体装置以及半导体装置的制造方法
US12349528B2 (en) * 2021-10-25 2025-07-01 Meta Platforms Technologies, Llc Strain management of III-P micro-LED epitaxy towards higher efficiency and low bow
FR3152095B1 (fr) * 2023-08-10 2025-07-25 Commissariat Energie Atomique Procédé de réalisation de dispositifs optoélectroniques

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Publication number Priority date Publication date Assignee Title
EP0408373B1 (en) * 1989-07-12 2000-04-26 Kabushiki Kaisha Toshiba Transverse-mode oscillation semiconductor laser device
US5255281A (en) * 1990-04-26 1993-10-19 Fujitsu Limited Semiconductor laser having double heterostructure
US5438585A (en) * 1994-05-31 1995-08-01 University Of New Mexico Unstable resonator semiconductor laser
WO1997032376A1 (en) * 1996-03-01 1997-09-04 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and cleaving method
JPH11274637A (ja) * 1998-03-20 1999-10-08 Pioneer Electron Corp 横結合分布帰還リッジ型半導体レーザ及びその製造方法
DE69934504T2 (de) 1998-10-07 2007-10-04 Sharp K.K. Halbleiterlaser
EP1076388B1 (en) * 1999-02-26 2009-03-11 The Furukawa Electric Co., Ltd. Semiconductor laser
JP2001230494A (ja) * 2000-02-17 2001-08-24 Mitsubishi Electric Corp 半導体レーザ素子及びその製造方法
KR100378352B1 (ko) * 2000-12-20 2003-03-29 삼성전기주식회사 리지 웨이브 가이드를 구비하는 반도체 레이저 다이오드및 그 제조 방법
JP2004014569A (ja) 2002-06-03 2004-01-15 Toshiba Corp 半導体レーザ及びその製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006077766A1 (ja) * 2005-01-18 2008-06-19 松下電器産業株式会社 半導体レーザ装置及びその製造方法
US7852892B2 (en) * 2005-01-18 2010-12-14 Panasonic Corporation Semiconductor laser device and method for manufacturing the same
JP4755090B2 (ja) * 2005-01-18 2011-08-24 パナソニック株式会社 半導体レーザ装置及びその製造方法
JP2006295072A (ja) * 2005-04-14 2006-10-26 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
JP2007280989A (ja) * 2006-04-03 2007-10-25 Nec Electronics Corp 半導体レーザ及びその製造方法
JP2008021705A (ja) * 2006-07-11 2008-01-31 Nec Electronics Corp 自励発振型半導体レーザとその製造方法
JP2020021865A (ja) * 2018-08-02 2020-02-06 日本ルメンタム株式会社 半導体光素子及び光送受信モジュール
JP7156850B2 (ja) 2018-08-02 2022-10-19 日本ルメンタム株式会社 半導体光素子及び光送受信モジュール
US12136797B2 (en) 2018-08-02 2024-11-05 Lumentum Operations Llc Semiconductor optical device and optical transceiver module

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US7221692B2 (en) 2007-05-22
TW200505118A (en) 2005-02-01
TWI236790B (en) 2005-07-21
US20050030997A1 (en) 2005-02-10

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