JP2004320040A - メッシュ型のゲート電極を有するmosトランジスタ - Google Patents
メッシュ型のゲート電極を有するmosトランジスタ Download PDFInfo
- Publication number
- JP2004320040A JP2004320040A JP2004123417A JP2004123417A JP2004320040A JP 2004320040 A JP2004320040 A JP 2004320040A JP 2004123417 A JP2004123417 A JP 2004123417A JP 2004123417 A JP2004123417 A JP 2004123417A JP 2004320040 A JP2004320040 A JP 2004320040A
- Authority
- JP
- Japan
- Prior art keywords
- source
- electrode
- insulating film
- substrate
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000003491 array Methods 0.000 claims abstract description 6
- 230000003647 oxidation Effects 0.000 claims abstract 5
- 238000007254 oxidation reaction Methods 0.000 claims abstract 5
- 239000004065 semiconductor Substances 0.000 claims description 48
- 239000011229 interlayer Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0024780A KR100493059B1 (ko) | 2003-04-18 | 2003-04-18 | 게이트 캐패시턴스를 감소시킬 수 있는 트랜지스터 |
US10/797,604 US7078775B2 (en) | 2003-04-18 | 2004-03-11 | MOS transistor having a mesh-type gate electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2004320040A true JP2004320040A (ja) | 2004-11-11 |
Family
ID=36083235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004123417A Withdrawn JP2004320040A (ja) | 2003-04-18 | 2004-04-19 | メッシュ型のゲート電極を有するmosトランジスタ |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1471581A3 (zh) |
JP (1) | JP2004320040A (zh) |
CN (1) | CN100505306C (zh) |
TW (1) | TWI229936B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8987838B2 (en) | 2013-06-14 | 2015-03-24 | Nichia Corporation | Field-effect transistor |
US9214523B2 (en) | 2013-05-30 | 2015-12-15 | Nichia Corporation | Field-effect transistor |
KR20190048489A (ko) * | 2017-10-31 | 2019-05-09 | 한국원자력연구원 | 원자력 발전 제어 계측용 반도체 스위칭 소자 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7355225B2 (en) * | 2005-10-26 | 2008-04-08 | Motorola, Inc. | Semiconductor device and method for providing a reduced surface area electrode |
US7701065B2 (en) * | 2007-10-26 | 2010-04-20 | Infineon Technologies Ag | Device including a semiconductor chip having a plurality of electrodes |
JP2011159755A (ja) | 2010-01-29 | 2011-08-18 | Sanyo Electric Co Ltd | 半導体装置 |
DE102010001788A1 (de) * | 2010-02-10 | 2011-08-11 | Forschungsverbund Berlin e.V., 12489 | Skalierbarer Aufbau für laterale Halbleiterbauelemente mit hoher Stromtragfähigkeit |
CN102623496B (zh) * | 2011-01-27 | 2014-11-05 | 无锡华润上华半导体有限公司 | 矩阵型mos场效应晶体管 |
KR101962585B1 (ko) | 2011-11-09 | 2019-03-26 | 스카이워크스 솔루션즈, 인코포레이티드 | 전계 효과 트랜지스터 구조 및 관련된 무선-주파수 스위치 |
US9324819B1 (en) | 2014-11-26 | 2016-04-26 | Delta Electronics, Inc. | Semiconductor device |
EP3062349B1 (en) | 2015-02-25 | 2019-10-09 | Nxp B.V. | Semiconductor device comprising a switch |
EP3352224B1 (en) * | 2017-01-24 | 2020-03-11 | Nxp B.V. | Semiconductor device comprising a switch |
CN111599862A (zh) * | 2020-05-21 | 2020-08-28 | Oppo广东移动通信有限公司 | 晶体管以及集成电路 |
CN112366145A (zh) * | 2020-10-26 | 2021-02-12 | 上海华力集成电路制造有限公司 | 一种用于ac校准的测试结构和测试方法 |
CN116344530A (zh) * | 2021-12-24 | 2023-06-27 | 长鑫存储技术有限公司 | 晶体管单元及其阵列、集成电路 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3355817B2 (ja) * | 1994-10-20 | 2002-12-09 | 株式会社デンソー | 半導体装置 |
JPH11261056A (ja) * | 1998-03-12 | 1999-09-24 | Toshiba Corp | 半導体装置及びその製造方法 |
-
2004
- 2004-04-14 TW TW93110322A patent/TWI229936B/zh not_active IP Right Cessation
- 2004-04-16 EP EP04252247A patent/EP1471581A3/en not_active Withdrawn
- 2004-04-18 CN CN 200410055021 patent/CN100505306C/zh not_active Expired - Fee Related
- 2004-04-19 JP JP2004123417A patent/JP2004320040A/ja not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9214523B2 (en) | 2013-05-30 | 2015-12-15 | Nichia Corporation | Field-effect transistor |
US8987838B2 (en) | 2013-06-14 | 2015-03-24 | Nichia Corporation | Field-effect transistor |
KR20190048489A (ko) * | 2017-10-31 | 2019-05-09 | 한국원자력연구원 | 원자력 발전 제어 계측용 반도체 스위칭 소자 |
KR101993596B1 (ko) * | 2017-10-31 | 2019-06-27 | 한국원자력연구원 | 원자력 발전 제어 계측용 반도체 스위칭 소자 |
Also Published As
Publication number | Publication date |
---|---|
TW200425475A (en) | 2004-11-16 |
EP1471581A2 (en) | 2004-10-27 |
EP1471581A3 (en) | 2005-07-13 |
TWI229936B (en) | 2005-03-21 |
CN100505306C (zh) | 2009-06-24 |
CN1571164A (zh) | 2005-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7078775B2 (en) | MOS transistor having a mesh-type gate electrode | |
US6900482B2 (en) | Semiconductor device having divided active regions with comb-teeth electrodes thereon | |
JP2004320040A (ja) | メッシュ型のゲート電極を有するmosトランジスタ | |
US5682048A (en) | Groove-type semiconductor device | |
US7126187B2 (en) | Semiconductor device and a method of producing the same | |
JP4641259B2 (ja) | パワーmosfet | |
KR100873892B1 (ko) | 멀티 핑거 트랜지스터 | |
JP2010187015A (ja) | 高スイッチングスピードのための横方向パワーmosfet | |
JP6135181B2 (ja) | 半導体装置 | |
TW201830638A (zh) | 半導體裝置 | |
US7227223B2 (en) | Power MOS transistor having trench gate | |
US7956409B2 (en) | Semiconductor device having trench gate structure | |
KR19990086261A (ko) | 반도체 장치 및 그의 제조 방법 | |
US7763939B2 (en) | Low on resistance CMOS transistor for integrated circuit applications | |
JP2008108794A (ja) | 半導体装置 | |
JP7231427B2 (ja) | 半導体装置 | |
JP2008085117A (ja) | 半導体装置およびその製造方法 | |
US20220013451A1 (en) | Compact transistor utilizing shield structure arrangement | |
US5844285A (en) | Body contact structure for semiconductor device | |
KR100769139B1 (ko) | 파워 모스에프이티 | |
US7034377B2 (en) | Semiconductor device and method of manufacturing the device | |
JP2008251565A (ja) | 半導体装置 | |
JP5061443B2 (ja) | 横型絶縁ゲートバイポーラトランジスタ | |
JP2004335778A (ja) | 半導体装置 | |
TW518697B (en) | Production-method of field-effect-transistors in integrated semiconductor-circuits and an integrated semiconductor-circuit produced with such a field-effect-transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Effective date: 20070323 Free format text: JAPANESE INTERMEDIATE CODE: A621 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20100326 |