JP2004320018A - 銅技術相互接続構造を使用する集積回路デバイス用のアルミニウム・パッド電力バスおよび信号ルーティング技術 - Google Patents
銅技術相互接続構造を使用する集積回路デバイス用のアルミニウム・パッド電力バスおよび信号ルーティング技術 Download PDFInfo
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 64
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 238000005516 engineering process Methods 0.000 title description 4
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- 238000000034 method Methods 0.000 claims description 45
- 229910052802 copper Inorganic materials 0.000 claims description 36
- 239000010949 copper Substances 0.000 claims description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 28
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- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
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- 229920002120 photoresistant polymer Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZEMPKEQAKRGZGQ-AAKVHIHISA-N 2,3-bis[[(z)-12-hydroxyoctadec-9-enoyl]oxy]propyl (z)-12-hydroxyoctadec-9-enoate Chemical compound CCCCCCC(O)C\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CC(O)CCCCCC)COC(=O)CCCCCCC\C=C/CC(O)CCCCCC ZEMPKEQAKRGZGQ-AAKVHIHISA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 aluminum-silicon-copper Chemical compound 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
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- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
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- 238000005272 metallurgy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
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- 239000005368 silicate glass Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H01L2224/45099—Material
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Abstract
【解決手段】相互接続の下層レベルを相互接続する相互接続構造をアルミニウム・パッド層内に形成することができる。
【選択図】図11
Description
本特許出願は、2003年4月10日に出願の「銅技術におけるアルミニウム・パッド電力バス(Aluminum Pad Power Bus)」という名称の米国仮特許出願第60/462,504号の特典を請求する。
以下の詳細な説明を、以下の図と併せ読めば、本発明をより容易に理解することができ、その利点および使用法がより簡単に明らかになる。
図5は相互接続構造の一領域だけを示すが、集積回路デバイスの他の場所(図示せず)では、アルミニウム・パッド156と同様のアルミニウム・パッドが、パッケージ・リードから下層の構造に信号を伝え、または下層の構造からパッケージ・リードに信号を提供するように、下層の導電性ランナまたは導電性バイアに接続される。
Claims (25)
- ボンド・パッド・レベルおよび1つまたは複数の下層の相互接続レベルを含み半導体基板上に形成された多段メタライゼーション相互接続システムを含む集積回路デバイスであって、前記ボンド・パッド・レベルが、
デバイスの外部に接続するようにそれぞれ構成された複数のコンタクト・パッドと、
前記複数のコンタクト・パッドのうちの1つまたは複数のパッドから、前記1つまたは複数の下層の相互接続レベルに電力を伝えるように構成された相互接続とを含む、集積回路デバイス。 - 前記1つまたは複数の相互接続レベルの材料が銅を含む、請求項1に記載の集積回路デバイス。
- 前記ボンド・パッド・レベルの材料がアルミニウムを含む、請求項1に記載の集積回路デバイス。
- 前記複数のコンタクト・パッドが、複数のコンタクト・パッドのうちの1つまたは複数のパッドに取り付けられたボンド線によってデバイスの外部に接続するように構成される、請求項1に記載の集積回路デバイス。
- 前記複数のコンタクト・パッドが、複数のコンタクト・パッドのうちの1つまたは複数のパッドに取り付けられたはんだバンプによってデバイスの外部に接続するように構成される、請求項1に記載の集積回路デバイス。
- 前記1つまたは複数の相互接続レベルの材料が銅を含み、前記ボンド・パッド・レベルの材料がアルミニウムを含み、さらに銅とアルミニウムの間の物理的接触領域内にバリア材料を含む、請求項1に記載の集積回路デバイス。
- 前記相互接続の下にあり、かつ1つまたは複数のパッドから、1つまたは複数の下層の相互接続レベルに電力を伝えるために前記相互接続と電気的に連絡する1つまたは複数のバイアをさらに含む、請求項1に記載の集積回路デバイス。
- 前記1つまたは複数の相互接続レベルが、上層および下層の導電性ランナを相互接続する実質上水平な導電性ランナおよび実質上垂直な導電性バイアをさらに含む、請求項1に記載の集積回路デバイス。
- 前記実質上水平な導電性ランナおよび実質上垂直な導電性バイアの材料が銅を含む、請求項8に記載の集積回路デバイス。
- 前記ボンド・パッド・レベルと前記ボンド・パッド・レベルの下にある前記1つまたは複数の相互接続レベルの間に配設されたパッシベーション層をさらに含む、請求項1に記載の集積回路デバイス。
- 前記ボンド・パッド・レベルの上にあるパッシベーション層をさらに含む、請求項1に記載の集積回路デバイス。
- ボンド・パッド・レベルおよび1つまたは複数の下層の相互接続レベルを含み半導体基板上に形成された多段メタライゼーション相互接続システムを含む集積回路デバイスであって、前記ボンド・パッド・レベルが、
デバイスの外部に接続するようにそれぞれ構成された複数のコンタクト・パッドと、
1つまたは複数の下層の相互接続レベルを、前記1つまたは複数の相互接続の下層のレベルのうちの別のレベルに接続するように構成された相互接続構造とを含む、集積回路デバイス。 - 前記1つまたは複数の相互接続レベルの材料が銅を含む、請求項12に記載の集積回路デバイス。
- 前記ボンド・パッド・レベルの材料がアルミニウムを含む、請求項12に記載の集積回路デバイス。
- 前記1つまたは複数の相互接続レベルが、上層および下層の導電性ランナを相互接続する実質上水平な導電性ランナおよび実質上垂直な導電性バイアをさらに含む、請求項12の集積回路デバイス。
- 前記実質上水平な導電性ランナおよび実質上垂直な導電性バイアの材料が銅を含む、請求項15に記載の集積回路デバイス。
- 集積回路デバイスの半導体基板の上に相互接続メタライゼーション・システムを形成する方法であって、
前記半導体基板の上に1つまたは複数の相互接続レベルを形成する工程と、
デバイスの外部に接続するようにそれぞれ構成された複数のコンタクト・パッドと、前記複数のコンタクト・パッドのうちの1つまたは複数のパッドから1つまたは複数の下層の相互接続レベルに電力を伝えるように構成された相互接続とを含むボンド・パッド・レベルを前記1つまたは複数の相互接続レベルの上に形成する工程とを含む方法。 - ボンド・パッド・レベルを形成する前記工程が、
前記1つまたは複数の相互接続レベルの上に誘電体層を形成する工程と、
前記誘電体層内に開口を形成する工程と、
前記誘電体層の上に導電性ブランケット層を形成する工程と、
前記ブランケット層から前記複数のコンタクト・パッドおよび前記相互接続を形成する工程であって、前記コンタクト・パッドが前記開口内に形成され、前記相互接続が誘電体層の上に形成される工程とをさらに含む、請求項17に記載の方法。 - ブランケット層を形成する前記工程に先立って、前記開口内にバリア層を形成する工程をさらに含む、請求項18に記載の方法。
- 前記ボンド・パッド・レベルの上にパッシベーション層を形成する工程をさらに含む、請求項17に記載の方法。
- 前記1つまたは複数の相互接続レベルの材料が銅を含む、請求項17に記載の方法。
- 前記ボンド・パッド・レベルの材料がアルミニウムを含む、請求項17に記載の方法。
- 前記複数のコンタクト・パッドのうちの1つまたは複数のパッドから1つまたは複数の下層の相互接続レベルに電力を伝えるために、前記ボンド・パッド・レベルの下に複数の導電性バイアを形成して、前記1つまたは複数の相互接続レベルと接続する工程をさらに含む、請求項17に記載の方法。
- 集積回路デバイスの半導体基板の上に相互接続メタライゼーション・システムを形成する方法であって、
前記半導体基板の上に1つまたは複数の相互接続レベルを形成する工程と、
デバイスの外部に接続するようにそれぞれ構成された複数のコンタクト・パッドと、前記1つまたは複数の下層の相互接続レベルのうちの1つのレベルを前記1つまたは複数の下層の相互接続レベルのうちの他のレベルの1つに接続するように構成された相互接続構造とを含むボンド・パッド・レベルを前記1つまたは複数の相互接続レベルの上に形成する工程とを含むプロセス。 - ボンド・パッド・レベルを形成する前記工程が、
前記1つまたは複数の相互接続層の上に誘電体層を形成する工程と、
前記誘電体層内に開口を形成する工程と、
前記誘電体層の上に導電性ブランケット層を形成する工程と、
前記ブランケット層から前記複数のコンタクト・パッドおよび前記相互接続構造を形成する工程であって、前記コンタクト・パッドが開口内に形成され、前記相互接続構造が誘電体層の上に形成される工程とをさらに含む、請求項24に記載の方法。
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US10/675,258 US7566964B2 (en) | 2003-04-10 | 2003-09-30 | Aluminum pad power bus and signal routing for integrated circuit devices utilizing copper technology interconnect structures |
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GB2427074B (en) | 2007-06-27 |
GB0404852D0 (en) | 2004-04-07 |
TW200503168A (en) | 2005-01-16 |
KR20040089496A (ko) | 2004-10-21 |
US20040201101A1 (en) | 2004-10-14 |
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JP2012054588A (ja) | 2012-03-15 |
US7566964B2 (en) | 2009-07-28 |
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