JP2004241777A5 - - Google Patents

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Publication number
JP2004241777A5
JP2004241777A5 JP2004026581A JP2004026581A JP2004241777A5 JP 2004241777 A5 JP2004241777 A5 JP 2004241777A5 JP 2004026581 A JP2004026581 A JP 2004026581A JP 2004026581 A JP2004026581 A JP 2004026581A JP 2004241777 A5 JP2004241777 A5 JP 2004241777A5
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JP
Japan
Prior art keywords
passivation layer
forming
vcsel
region
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004026581A
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English (en)
Japanese (ja)
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JP2004241777A (ja
Filing date
Publication date
Priority claimed from US10/361,092 external-priority patent/US6862309B2/en
Application filed filed Critical
Publication of JP2004241777A publication Critical patent/JP2004241777A/ja
Publication of JP2004241777A5 publication Critical patent/JP2004241777A5/ja
Withdrawn legal-status Critical Current

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JP2004026581A 2003-02-06 2004-02-03 酸化型垂直キャビティ面発光レーザのためのパッシベーション方法 Withdrawn JP2004241777A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/361,092 US6862309B2 (en) 2003-02-06 2003-02-06 Passivation scheme for oxide vertical cavity surface-emitting laser

Publications (2)

Publication Number Publication Date
JP2004241777A JP2004241777A (ja) 2004-08-26
JP2004241777A5 true JP2004241777A5 (enExample) 2007-03-08

Family

ID=31715604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004026581A Withdrawn JP2004241777A (ja) 2003-02-06 2004-02-03 酸化型垂直キャビティ面発光レーザのためのパッシベーション方法

Country Status (3)

Country Link
US (1) US6862309B2 (enExample)
JP (1) JP2004241777A (enExample)
GB (1) GB2399221B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7011979B2 (en) * 2003-03-12 2006-03-14 Debrabander Gregory N Detecting pinholes in vertical cavity surface-emitting laser passivation
US20060013276A1 (en) * 2004-07-15 2006-01-19 Mchugo Scott A VCSEL having an air gap and protective coating
JP5165861B2 (ja) * 2006-06-26 2013-03-21 昭和電工株式会社 過弗化物の処理方法及び処理装置
US8189642B1 (en) 2007-08-08 2012-05-29 Emcore Corporation VCSEL semiconductor device
US20090041074A1 (en) * 2007-08-08 2009-02-12 Emcore Corporation Passivation of Vertical Cavity Surface Emitting Lasers
JP4609508B2 (ja) * 2007-11-20 2011-01-12 富士ゼロックス株式会社 層間絶縁膜の応力制御により信頼性を改善した表面発光型半導体レーザアレイ素子
US7957447B2 (en) 2007-11-20 2011-06-07 Fuji Xerox Co., Ltd. VCSEL array device and method for manufacturing the VCSEL array device
TWI497854B (zh) * 2009-10-08 2015-08-21 Truelight Corp 氧化侷限式面射型雷射製作方法
JP2012060061A (ja) * 2010-09-13 2012-03-22 Stanley Electric Co Ltd 半導体発光装置の製造方法及び半導体発光装置
JP5720994B2 (ja) * 2011-03-16 2015-05-20 スタンレー電気株式会社 半導体装置および半導体装置の製造方法
GB2494008A (en) * 2011-08-23 2013-02-27 Oclaro Technology Ltd semiconductor laser device and a method for manufacturing a semiconductor laser device
JP2015126077A (ja) * 2013-12-26 2015-07-06 豊田合成株式会社 発光部品および発光装置とこれらの製造方法
US11581705B2 (en) 2019-04-08 2023-02-14 Lumentum Operations Llc Vertical-cavity surface-emitting laser with dense epi-side contacts
CN111313236B (zh) * 2020-05-11 2020-10-16 北京金太光芯科技有限公司 具有复合钝化层的垂直腔表面发射激光器和其制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW347149U (en) * 1993-02-26 1998-12-01 Dow Corning Integrated circuits protected from the environment by ceramic and barrier metal layers
US5719893A (en) * 1996-07-17 1998-02-17 Motorola, Inc. Passivated vertical cavity surface emitting laser
US6107188A (en) * 1999-08-16 2000-08-22 Taiwan Semiconductor Manufacturing Company Passivation method for copper process
DE10026262B4 (de) * 2000-05-26 2005-03-17 Osram Opto Semiconductors Gmbh Vertikalresonator-Laserdiode (VCSEL)
US6674777B1 (en) * 2000-08-31 2004-01-06 Honeywell International Inc. Protective side wall passivation for VCSEL chips
JP2002208755A (ja) * 2000-11-13 2002-07-26 Fuji Xerox Co Ltd 面発光型半導体レーザ
KR100708107B1 (ko) * 2000-12-19 2007-04-16 삼성전자주식회사 전기 광학적 특성이 개선된 반도체 광 방출 장치 및 그제조방법
US6589805B2 (en) * 2001-03-26 2003-07-08 Gazillion Bits, Inc. Current confinement structure for vertical cavity surface emitting laser
US6680964B2 (en) * 2001-12-07 2004-01-20 Agilent Technologies, Inc. Moisture passivated planar index-guided VCSEL

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