JP2004241777A - 酸化型垂直キャビティ面発光レーザのためのパッシベーション方法 - Google Patents

酸化型垂直キャビティ面発光レーザのためのパッシベーション方法 Download PDF

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Publication number
JP2004241777A
JP2004241777A JP2004026581A JP2004026581A JP2004241777A JP 2004241777 A JP2004241777 A JP 2004241777A JP 2004026581 A JP2004026581 A JP 2004026581A JP 2004026581 A JP2004026581 A JP 2004026581A JP 2004241777 A JP2004241777 A JP 2004241777A
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Japan
Prior art keywords
passivation layer
vcsel
forming
oxidized
layer
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Application number
JP2004026581A
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English (en)
Japanese (ja)
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JP2004241777A5 (enExample
Inventor
Gregory N Debrabander
エヌ． デブラバンダー グレゴリー
An-Nien Cheng
チャン アン−ニェン
Suning Xie
シエィ スーニン
Wilson Hasan Widjaja
ハサーン ウィジャヤ ウィルソン
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Agilent Technologies Inc
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Agilent Technologies Inc
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Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2004241777A publication Critical patent/JP2004241777A/ja
Publication of JP2004241777A5 publication Critical patent/JP2004241777A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2004026581A 2003-02-06 2004-02-03 酸化型垂直キャビティ面発光レーザのためのパッシベーション方法 Withdrawn JP2004241777A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/361,092 US6862309B2 (en) 2003-02-06 2003-02-06 Passivation scheme for oxide vertical cavity surface-emitting laser

Publications (2)

Publication Number Publication Date
JP2004241777A true JP2004241777A (ja) 2004-08-26
JP2004241777A5 JP2004241777A5 (enExample) 2007-03-08

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ID=31715604

Family Applications (1)

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JP2004026581A Withdrawn JP2004241777A (ja) 2003-02-06 2004-02-03 酸化型垂直キャビティ面発光レーザのためのパッシベーション方法

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Country Link
US (1) US6862309B2 (enExample)
JP (1) JP2004241777A (enExample)
GB (1) GB2399221B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008000728A (ja) * 2006-06-26 2008-01-10 Hitachi Ltd 過弗化物の処理方法及び処理装置
EP2063505A2 (en) 2007-11-20 2009-05-27 Fuji Xerox Co., Ltd. VCSEL array device and method for manufacturing the VCSEL array device
JP2009147287A (ja) * 2007-11-20 2009-07-02 Fuji Xerox Co Ltd 層間絶縁膜の応力制御により信頼性を改善した表面発光型半導体レーザアレイ素子
JP2012060061A (ja) * 2010-09-13 2012-03-22 Stanley Electric Co Ltd 半導体発光装置の製造方法及び半導体発光装置
JP2012195437A (ja) * 2011-03-16 2012-10-11 Stanley Electric Co Ltd 半導体装置および半導体装置の製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7011979B2 (en) * 2003-03-12 2006-03-14 Debrabander Gregory N Detecting pinholes in vertical cavity surface-emitting laser passivation
US20060013276A1 (en) * 2004-07-15 2006-01-19 Mchugo Scott A VCSEL having an air gap and protective coating
US8189642B1 (en) 2007-08-08 2012-05-29 Emcore Corporation VCSEL semiconductor device
US20090041074A1 (en) * 2007-08-08 2009-02-12 Emcore Corporation Passivation of Vertical Cavity Surface Emitting Lasers
TWI497854B (zh) * 2009-10-08 2015-08-21 Truelight Corp 氧化侷限式面射型雷射製作方法
GB2494008A (en) * 2011-08-23 2013-02-27 Oclaro Technology Ltd semiconductor laser device and a method for manufacturing a semiconductor laser device
JP2015126077A (ja) * 2013-12-26 2015-07-06 豊田合成株式会社 発光部品および発光装置とこれらの製造方法
US11581705B2 (en) 2019-04-08 2023-02-14 Lumentum Operations Llc Vertical-cavity surface-emitting laser with dense epi-side contacts
CN111313236B (zh) * 2020-05-11 2020-10-16 北京金太光芯科技有限公司 具有复合钝化层的垂直腔表面发射激光器和其制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW347149U (en) * 1993-02-26 1998-12-01 Dow Corning Integrated circuits protected from the environment by ceramic and barrier metal layers
US5719893A (en) * 1996-07-17 1998-02-17 Motorola, Inc. Passivated vertical cavity surface emitting laser
US6107188A (en) * 1999-08-16 2000-08-22 Taiwan Semiconductor Manufacturing Company Passivation method for copper process
DE10026262B4 (de) * 2000-05-26 2005-03-17 Osram Opto Semiconductors Gmbh Vertikalresonator-Laserdiode (VCSEL)
US6674777B1 (en) * 2000-08-31 2004-01-06 Honeywell International Inc. Protective side wall passivation for VCSEL chips
JP2002208755A (ja) * 2000-11-13 2002-07-26 Fuji Xerox Co Ltd 面発光型半導体レーザ
KR100708107B1 (ko) * 2000-12-19 2007-04-16 삼성전자주식회사 전기 광학적 특성이 개선된 반도체 광 방출 장치 및 그제조방법
US6589805B2 (en) * 2001-03-26 2003-07-08 Gazillion Bits, Inc. Current confinement structure for vertical cavity surface emitting laser
US6680964B2 (en) * 2001-12-07 2004-01-20 Agilent Technologies, Inc. Moisture passivated planar index-guided VCSEL

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008000728A (ja) * 2006-06-26 2008-01-10 Hitachi Ltd 過弗化物の処理方法及び処理装置
EP2063505A2 (en) 2007-11-20 2009-05-27 Fuji Xerox Co., Ltd. VCSEL array device and method for manufacturing the VCSEL array device
JP2009147287A (ja) * 2007-11-20 2009-07-02 Fuji Xerox Co Ltd 層間絶縁膜の応力制御により信頼性を改善した表面発光型半導体レーザアレイ素子
US7957447B2 (en) 2007-11-20 2011-06-07 Fuji Xerox Co., Ltd. VCSEL array device and method for manufacturing the VCSEL array device
KR101160530B1 (ko) * 2007-11-20 2012-06-28 후지제롯쿠스 가부시끼가이샤 층간 절연막의 응력 제어에 의해 신뢰성을 개선한 표면 발광형 반도체 레이저 어레이 소자
JP2012060061A (ja) * 2010-09-13 2012-03-22 Stanley Electric Co Ltd 半導体発光装置の製造方法及び半導体発光装置
JP2012195437A (ja) * 2011-03-16 2012-10-11 Stanley Electric Co Ltd 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
US6862309B2 (en) 2005-03-01
GB2399221B (en) 2005-12-14
GB0400506D0 (en) 2004-02-11
GB2399221A (en) 2004-09-08
US20040156410A1 (en) 2004-08-12

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