JP2005303310A5 - - Google Patents

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Publication number
JP2005303310A5
JP2005303310A5 JP2005114397A JP2005114397A JP2005303310A5 JP 2005303310 A5 JP2005303310 A5 JP 2005303310A5 JP 2005114397 A JP2005114397 A JP 2005114397A JP 2005114397 A JP2005114397 A JP 2005114397A JP 2005303310 A5 JP2005303310 A5 JP 2005303310A5
Authority
JP
Japan
Prior art keywords
insulating layer
metal shape
metal
polishing
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005114397A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005303310A (ja
JP4243258B2 (ja
Filing date
Publication date
Application filed filed Critical
Publication of JP2005303310A publication Critical patent/JP2005303310A/ja
Publication of JP2005303310A5 publication Critical patent/JP2005303310A5/ja
Application granted granted Critical
Publication of JP4243258B2 publication Critical patent/JP4243258B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2005114397A 2004-04-13 2005-04-12 光学効率を増加させる金属パターン周辺の絶縁層の平坦化方法 Expired - Lifetime JP4243258B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56208604P 2004-04-13 2004-04-13

Publications (3)

Publication Number Publication Date
JP2005303310A JP2005303310A (ja) 2005-10-27
JP2005303310A5 true JP2005303310A5 (enExample) 2005-12-08
JP4243258B2 JP4243258B2 (ja) 2009-03-25

Family

ID=35334383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005114397A Expired - Lifetime JP4243258B2 (ja) 2004-04-13 2005-04-12 光学効率を増加させる金属パターン周辺の絶縁層の平坦化方法

Country Status (4)

Country Link
US (1) US7196012B2 (enExample)
JP (1) JP4243258B2 (enExample)
CN (1) CN100419951C (enExample)
TW (1) TWI281228B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7547573B2 (en) * 2006-08-01 2009-06-16 United Microelectronics Corp. Image sensor and method of manufacturing the same
US7750470B2 (en) * 2007-02-08 2010-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement
US20110086444A1 (en) * 2009-10-14 2011-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Process for producing substrates free of patterns using an alpha stepper to ensure results
CN103779202B (zh) * 2014-01-27 2016-12-07 深圳市华星光电技术有限公司 像素结构及其制作方法和显示面板
US10438909B2 (en) * 2016-02-12 2019-10-08 Globalfoundries Singapore Pte. Ltd. Reliable passivation for integrated circuits
US11231533B2 (en) * 2018-07-12 2022-01-25 Visera Technologies Company Limited Optical element having dielectric layers formed by ion-assisted deposition and method for fabricating the same
KR102812791B1 (ko) 2020-03-02 2025-05-23 삼성전자주식회사 이미지 센서

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5795495A (en) * 1994-04-25 1998-08-18 Micron Technology, Inc. Method of chemical mechanical polishing for dielectric layers
US5708264A (en) * 1995-11-07 1998-01-13 Eastman Kodak Company Planar color filter array for CCDs from dyed and mordant layers
US5677202A (en) * 1995-11-20 1997-10-14 Eastman Kodak Company Method for making planar color filter array for image sensors with embedded color filter arrays
US6153933A (en) * 1997-09-05 2000-11-28 Advanced Micro Devices, Inc. Elimination of residual materials in a multiple-layer interconnect structure
US5928959A (en) * 1997-09-30 1999-07-27 Siemens Aktiengesellschaft Dishing resistance
TW407342B (en) * 1998-06-17 2000-10-01 United Microelectronics Corp Planarization method of damascene structure
TW512170B (en) * 1998-07-24 2002-12-01 Ibm Aqueous slurry composition and method for polishing a surface using the same
US6777320B1 (en) * 1998-11-13 2004-08-17 Intel Corporation In-plane on-chip decoupling capacitors and method for making same
US6207533B1 (en) * 1999-10-08 2001-03-27 Chartered Semiconductor Manufacturing Ltd. Method for forming an integrated circuit
CN100345303C (zh) * 2002-08-01 2007-10-24 台湾积体电路制造股份有限公司 影像感测器微透镜组、影像感测器及其制造方法
US6867116B1 (en) * 2003-11-10 2005-03-15 Macronix International Co., Ltd. Fabrication method of sub-resolution pitch for integrated circuits

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