TWI281228B - Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement - Google Patents

Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement Download PDF

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Publication number
TWI281228B
TWI281228B TW094111637A TW94111637A TWI281228B TW I281228 B TWI281228 B TW I281228B TW 094111637 A TW094111637 A TW 094111637A TW 94111637 A TW94111637 A TW 94111637A TW I281228 B TWI281228 B TW I281228B
Authority
TW
Taiwan
Prior art keywords
dielectric layer
metal
layer
forming
pattern
Prior art date
Application number
TW094111637A
Other languages
English (en)
Chinese (zh)
Other versions
TW200534431A (en
Inventor
Yeou-Lang Hsieh
Chin-Min Lin
Jiann-Jong Wang
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of TW200534431A publication Critical patent/TW200534431A/zh
Application granted granted Critical
Publication of TWI281228B publication Critical patent/TWI281228B/zh

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Classifications

    • H10W20/092—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
TW094111637A 2004-04-13 2005-04-13 Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement TWI281228B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56208604P 2004-04-13 2004-04-13
US11/084,228 US7196012B2 (en) 2004-04-13 2005-03-16 Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement

Publications (2)

Publication Number Publication Date
TW200534431A TW200534431A (en) 2005-10-16
TWI281228B true TWI281228B (en) 2007-05-11

Family

ID=35334383

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094111637A TWI281228B (en) 2004-04-13 2005-04-13 Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement

Country Status (4)

Country Link
US (1) US7196012B2 (enExample)
JP (1) JP4243258B2 (enExample)
CN (1) CN100419951C (enExample)
TW (1) TWI281228B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7547573B2 (en) * 2006-08-01 2009-06-16 United Microelectronics Corp. Image sensor and method of manufacturing the same
US7750470B2 (en) * 2007-02-08 2010-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement
US20110086444A1 (en) * 2009-10-14 2011-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Process for producing substrates free of patterns using an alpha stepper to ensure results
CN103779202B (zh) * 2014-01-27 2016-12-07 深圳市华星光电技术有限公司 像素结构及其制作方法和显示面板
US10438909B2 (en) 2016-02-12 2019-10-08 Globalfoundries Singapore Pte. Ltd. Reliable passivation for integrated circuits
US11231533B2 (en) * 2018-07-12 2022-01-25 Visera Technologies Company Limited Optical element having dielectric layers formed by ion-assisted deposition and method for fabricating the same
KR102812791B1 (ko) 2020-03-02 2025-05-23 삼성전자주식회사 이미지 센서

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5795495A (en) * 1994-04-25 1998-08-18 Micron Technology, Inc. Method of chemical mechanical polishing for dielectric layers
US5708264A (en) * 1995-11-07 1998-01-13 Eastman Kodak Company Planar color filter array for CCDs from dyed and mordant layers
US5677202A (en) * 1995-11-20 1997-10-14 Eastman Kodak Company Method for making planar color filter array for image sensors with embedded color filter arrays
US6153933A (en) * 1997-09-05 2000-11-28 Advanced Micro Devices, Inc. Elimination of residual materials in a multiple-layer interconnect structure
US5928959A (en) * 1997-09-30 1999-07-27 Siemens Aktiengesellschaft Dishing resistance
TW407342B (en) * 1998-06-17 2000-10-01 United Microelectronics Corp Planarization method of damascene structure
TW512170B (en) * 1998-07-24 2002-12-01 Ibm Aqueous slurry composition and method for polishing a surface using the same
US6777320B1 (en) * 1998-11-13 2004-08-17 Intel Corporation In-plane on-chip decoupling capacitors and method for making same
US6207533B1 (en) * 1999-10-08 2001-03-27 Chartered Semiconductor Manufacturing Ltd. Method for forming an integrated circuit
CN100345303C (zh) * 2002-08-01 2007-10-24 台湾积体电路制造股份有限公司 影像感测器微透镜组、影像感测器及其制造方法
US6867116B1 (en) * 2003-11-10 2005-03-15 Macronix International Co., Ltd. Fabrication method of sub-resolution pitch for integrated circuits

Also Published As

Publication number Publication date
TW200534431A (en) 2005-10-16
JP2005303310A (ja) 2005-10-27
JP4243258B2 (ja) 2009-03-25
US7196012B2 (en) 2007-03-27
CN1697126A (zh) 2005-11-16
CN100419951C (zh) 2008-09-17
US20050227490A1 (en) 2005-10-13

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MM4A Annulment or lapse of patent due to non-payment of fees