JP4243258B2 - 光学効率を増加させる金属パターン周辺の絶縁層の平坦化方法 - Google Patents
光学効率を増加させる金属パターン周辺の絶縁層の平坦化方法 Download PDFInfo
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- JP4243258B2 JP4243258B2 JP2005114397A JP2005114397A JP4243258B2 JP 4243258 B2 JP4243258 B2 JP 4243258B2 JP 2005114397 A JP2005114397 A JP 2005114397A JP 2005114397 A JP2005114397 A JP 2005114397A JP 4243258 B2 JP4243258 B2 JP 4243258B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 148
- 239000002184 metal Substances 0.000 title claims description 148
- 238000000034 method Methods 0.000 title claims description 46
- 230000003287 optical effect Effects 0.000 title claims description 28
- 239000000758 substrate Substances 0.000 claims description 27
- 238000005498 polishing Methods 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 107
- 150000002739 metals Chemical class 0.000 description 57
- 239000011810 insulating material Substances 0.000 description 14
- 238000002845 discoloration Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000012876 topography Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Description
110、214、312、412、512 第一絶縁層
202、502 検出部
216、314、414 第二絶縁層
220、520 基板
224、316、416 カラーフィルター層
514 リセス
516 フォトマスク
Claims (6)
- 半導体装置の形成方法であって、
基板内または基板上の所定の領域に光学センサーが形成されており、金属形状を有する金属パターンを、前記金属形状間に前記所定の領域が位置するように前記基板上に提供する工程と、
プラズマ化学気相成長(PECVD)、または高密度プラズマ化学気相成長(HDPECVD)、またはそれらの技術の組合せにより、前記金属形状と、前記金属形状間の前記所定の領域上とに光透過性を有する第1絶縁層を成膜する工程と、
前記第1絶縁層の研磨速度が前記金属形状の研磨速度より速い方式で前記第1絶縁層を研磨し、前記金属形状間に前記第1絶縁層のみを残し、且つ、前記第1絶縁層の上表面が前記金属形状の上表面より低く、且つ、どんな傾斜表面も有すことなく構成されるように化学機械研磨を行う工程と、
化学気相成長(CVD)、または塗布方法により前記金属形状の上と前記第1絶縁層の上方とに第2絶縁層を形成し、前記光学センサー上の複数の前記金属形状間の前記第1絶縁層と前記第2絶縁層の全体の膜厚を同一にすることを特徴とする半導体装置の形成方法。 - 半導体装置の形成方法であって、
基板内または基板上の所定の領域に光学センサーが形成されており、金属形状を有する金属パターンを、前記金属形状間に前記所定の領域が位置するように前記基板上に提供する工程と、
プラズマ化学気相成長(PECVD)、または高密度プラズマ化学気相成長(HDPECVD)、またはそれらの技術の組合せにより、前記金属形状と、前記金属形状間の前記所定の領域上とに光透過性を有する第1絶縁層を成膜する工程と、
前記第1絶縁層を研磨し、前記金属形状を実質的に露出せず、且つ、前記第1絶縁層を平坦でなく、傾斜した表面にする第1化学機械研磨を行う工程と、
前記第1化学機械研磨の工程後、前記第1絶縁層の研磨速度が前記金属形状の研磨速度より遅い方式で前記第1絶縁層を研磨し、前記金属形状間に前記第1絶縁層のみを残し、且つ、前記第1絶縁層の上表面が前記金属形状の上表面より高く、且つ、どんな傾斜表面も有すことなく構成されるように第2化学機械研磨を行う工程と、
化学気相成長(CVD)、または塗布方法により前記金属形状の上と前記第1絶縁層の上方とに第2絶縁層を形成し、前記光学センサー上の複数の前記金属形状間の前記第1絶縁層と前記第2絶縁層の全体の膜厚を同一にすることを特徴とする半導体装置の形成方法。 - 半導体装置の形成方法であって、
基板内または基板上の所定の領域に光学センサーが形成されており、金属形状を有する金属パターンを、前記金属形状間に前記所定の領域が位置するように前記基板上に提供する工程と、
プラズマ化学気相成長(PECVD)、または高密度プラズマ化学気相成長(HDPECVD)、またはそれらの技術の組合せにより、前記金属形状と、前記金属形状間の前記所定の領域上とに光透過性を有する第1絶縁層を成膜する工程と、
前記第1絶縁層を研磨し、前記金属形状を実質的に露出せず、且つ、前記第1絶縁層を平坦でなく、傾斜した表面にする第1化学機械研磨を行う工程と、
前記第1化学機械研磨の工程後、選択的に、エッチング工程により前記金属形状の表面まで前記第1絶縁層を直接エッチングし、前記金属形状間に前記第1絶縁層のみを残し、且つ、前記第1絶縁層の上表面が前記金属形状の上表面より低く、且つ、どんな傾斜表面も有すことなく構成されるようにエッチングを行う工程と、
化学気相成長(CVD)、または塗布方法により前記金属形状の上と前記第1絶縁層の上方とに第2絶縁層を形成し、前記光学センサー上の複数の前記金属形状間の前記第1絶縁層と前記第2絶縁層の全体の膜厚を同一にすることを特徴とする半導体装置の形成方法。 - 前記金属形状間に残留された前記第1絶縁層の厚さは、前記金属形状の厚さの50%、またはそれ以上であることを特徴とする請求項3に記載の半導体装置の形成方法。
- 前記金属形状は、異なる高さの上表面を含むことを特徴とする請求項1〜3のいずれか1項に記載の半導体装置の形成方法。
- 前記金属形状は、分離の金属層から形成されることを特徴とする請求項1〜3のいずれか1項に記載の半導体装置の形成方法。
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US56208604P | 2004-04-13 | 2004-04-13 |
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JP2005303310A5 JP2005303310A5 (ja) | 2005-12-08 |
JP4243258B2 true JP4243258B2 (ja) | 2009-03-25 |
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US (1) | US7196012B2 (ja) |
JP (1) | JP4243258B2 (ja) |
CN (1) | CN100419951C (ja) |
TW (1) | TWI281228B (ja) |
Families Citing this family (7)
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US7547573B2 (en) * | 2006-08-01 | 2009-06-16 | United Microelectronics Corp. | Image sensor and method of manufacturing the same |
US7750470B2 (en) * | 2007-02-08 | 2010-07-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement |
US20110086444A1 (en) * | 2009-10-14 | 2011-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process for producing substrates free of patterns using an alpha stepper to ensure results |
CN103779202B (zh) * | 2014-01-27 | 2016-12-07 | 深圳市华星光电技术有限公司 | 像素结构及其制作方法和显示面板 |
US10438909B2 (en) | 2016-02-12 | 2019-10-08 | Globalfoundries Singapore Pte. Ltd. | Reliable passivation for integrated circuits |
US11231533B2 (en) * | 2018-07-12 | 2022-01-25 | Visera Technologies Company Limited | Optical element having dielectric layers formed by ion-assisted deposition and method for fabricating the same |
KR20210110912A (ko) | 2020-03-02 | 2021-09-10 | 삼성전자주식회사 | 이미지 센서 |
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US5795495A (en) * | 1994-04-25 | 1998-08-18 | Micron Technology, Inc. | Method of chemical mechanical polishing for dielectric layers |
US5708264A (en) * | 1995-11-07 | 1998-01-13 | Eastman Kodak Company | Planar color filter array for CCDs from dyed and mordant layers |
US5677202A (en) * | 1995-11-20 | 1997-10-14 | Eastman Kodak Company | Method for making planar color filter array for image sensors with embedded color filter arrays |
US6153933A (en) * | 1997-09-05 | 2000-11-28 | Advanced Micro Devices, Inc. | Elimination of residual materials in a multiple-layer interconnect structure |
US5928959A (en) * | 1997-09-30 | 1999-07-27 | Siemens Aktiengesellschaft | Dishing resistance |
TW407342B (en) * | 1998-06-17 | 2000-10-01 | United Microelectronics Corp | Planarization method of damascene structure |
TW512170B (en) * | 1998-07-24 | 2002-12-01 | Ibm | Aqueous slurry composition and method for polishing a surface using the same |
US6777320B1 (en) * | 1998-11-13 | 2004-08-17 | Intel Corporation | In-plane on-chip decoupling capacitors and method for making same |
US6207533B1 (en) * | 1999-10-08 | 2001-03-27 | Chartered Semiconductor Manufacturing Ltd. | Method for forming an integrated circuit |
CN100345303C (zh) * | 2002-08-01 | 2007-10-24 | 台湾积体电路制造股份有限公司 | 影像感测器微透镜组、影像感测器及其制造方法 |
US6867116B1 (en) * | 2003-11-10 | 2005-03-15 | Macronix International Co., Ltd. | Fabrication method of sub-resolution pitch for integrated circuits |
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- 2005-03-16 US US11/084,228 patent/US7196012B2/en not_active Expired - Fee Related
- 2005-04-12 JP JP2005114397A patent/JP4243258B2/ja active Active
- 2005-04-13 TW TW094111637A patent/TWI281228B/zh not_active IP Right Cessation
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CN100419951C (zh) | 2008-09-17 |
US7196012B2 (en) | 2007-03-27 |
US20050227490A1 (en) | 2005-10-13 |
TWI281228B (en) | 2007-05-11 |
TW200534431A (en) | 2005-10-16 |
JP2005303310A (ja) | 2005-10-27 |
CN1697126A (zh) | 2005-11-16 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |