TWI459546B - 感測光二極體上具有弧形微鏡之影像感測器及其製造方法 - Google Patents
感測光二極體上具有弧形微鏡之影像感測器及其製造方法 Download PDFInfo
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Description
本發明係關於影像感測器裝置,且更特定言之,係關於具有形成於光敏元件上之微鏡的影像感測器。
隨著影像感測器及組成感測陣列之個別像素的尺寸由於進一步整合之緣故而變小,將儘可能多之入射光俘獲到感測陣列上變得較為重要。
用以解決此問題之方法包含使光敏元件(諸如光二極體)佔據儘可能多之像素面積。另一種方法係在每一像素上使用微透鏡來將入射光聚焦至光二極體上。微透鏡方法試圖俘獲通常將入射於光二極體區外部之像素部分上的光。
此外,在一背側照明(BSI)裝置中,可使用一平面鏡材料來將光穿過光二極體反射回去,藉此促使將更多入射光轉換成一電信號。
本發明包含在一CMOS影像感測器(CIS)製程中在一光二極體作用區域(收集區域)上整合弧形鏡。該弧形微鏡將已穿過該收集區域之光反射回該光二極體中。在一項實施例中,該弧形微鏡實施在一BSI裝置中。
在以下描述內容中,提供大量特定細節以便提供對本發明實施例之徹底理解。然而,熟習此項技術者將瞭解,可在沒有該等特定細節中之一者或一者以上之情況下或利用
其它方法、組件、材料等來實踐本發明。在其它情況下,未展示或描述熟知架構、材料或操作以便避免混淆本發明之各態樣。
整個說明書中對"一項實施例"或"一實施例"之提及意味著結合該實施例描述且在本發明之至少一項實施例中包含之特定特徵、架構或特徵。因此,整個說明書中各處出現短語"在一項實施例中"或"在一實施例中"並不一定全部指代相同實施例。此外,在一個或多項實施例中可以任何適宜方式組合該等特定特徵、架構或特徵。
圖1說明具有微透鏡190之先前技術CMOS影像感測器100的示意橫截面部分。一基板110在其中形成有一光二極體且耦接至金屬前介電(PMD)層120。金屬前介電(PMD)層120耦接至層間介電(ILD)層130及第一金屬層135。層間介電(ILD)層130耦接至層間介電(ILD)層140及第二金屬層145。層間介電(ILD)層140耦接至層間介電(ILD)層150及第三金屬層155。層間介電層150耦接至抗反射層160並位於抗反射層160下方。抗反射層160耦接至平坦化層165並位於平坦化層165下方。平坦化層165耦接至彩色濾光器170。彩色濾光器170耦接至平坦化層180。平坦化層180耦接至微透鏡190。
圖1所示之影像感測器之先前技術橫截面可包含較少或較多之介電層及/或金屬層。然而,一般概念為相同的,即一光二極體形成在一基板中,且各種介電層及金屬層形成在基板頂部上方。此外,一彩色濾光器層及多個微透鏡
形成在像素頂部上以完成橫截面視圖中之主要功能架構。圖1展示自基板之頂部表面入射光之習知"前側"影像感測器。
圖2說明具有微透鏡210之先前技術背側照明裝置200的示意橫截面部分。微透鏡210耦接至一平坦化層220。平坦化層220耦接至一彩色濾光器230。該彩色濾光器230耦接至平坦化層240。最後,該平坦化層240形成於含有光二極體之基板250之背側(或底部表面)上。在基板250之頂部表面上,基板具有如圖1所示之各種介電層及金屬層,該等介電層及該等金屬層用於向像素及/或感測陣列之其它組件進行電互連。因此,基板250耦接至金屬前介電(PMD)層260。PMD層260耦接至層間介電(ILD)層270及第一金屬層275。ILD層270耦接至層間介電(ILD)層280及第二金屬層285。ILD層280耦接至層間介電(ILD)層290及第三金屬層295。
圖3說明具有自平面微鏡360反射之光路徑之先前技術背側照明裝置300的示意橫截面部分。微透鏡310耦接至平坦化層320。平坦化層320耦接至彩色濾光器330。彩色濾光器330耦接至光二極體層340。光二極體層340耦接至金屬前介電(PMD)層350。PMD層350耦接至平面微鏡360。入射光受到損失,或更糟糕地導致對鄰近像素產生串擾。
圖4說明本發明之優點。圖4展示具有自弧形微鏡460反射之光路徑之背側照明裝置400的示意橫截面部分。如可看到的且與圖3形成對比,弧形微鏡460有效地俘獲較多量
之"穿過"入射光並穿過光二極體區域將其重新引導回去。此對於增加由光二極體產生之信號為有利的。
圖5說明根據本發明之一項實施例在金屬前介電層560上具有弧形微鏡565之背側照明裝置500的示意橫截面部分。自以下論述中將容易瞭解到,微鏡565可放置在包含層560-590之"介電堆疊"中之多種位置中。事實上,微鏡565可放置在基板550與金屬前介電層560之間,或放置在層間介電(ILD)層590頂部上。精確放置通常取決於影像感測器之各種特定設計參數及尺寸,但通常被放置成使到光二極體上之光反射最大化。
如圖5中可見,在基板550之背側上,微透鏡510耦接至平坦化層520。平坦化層520耦接至彩色濾光器530。彩色濾光器530耦接至平坦化層540。最後,平坦化層540耦接至基板550。
在基板550之頂側上,金屬前介電(PMD)層560形成於基板550之頂部上。PMD層560耦接至弧形微鏡565。PMD層560還耦接至層間介電(ILD)層570及第一金屬層575。ILD層570耦接至層間介電(ILD)層580及第二金屬層585。ILD層580耦接至層間介電(ILD)層590及第三金屬層595。
在本發明之一項實施例中,可處理CIS直至第一金屬層,且在PMD層560頂部上處理一無機微透鏡。一反射材料(諸如金屬)薄層可毯覆式沈積在晶圓上;反射材料之厚度可約為10至50nm。接著可用光阻劑覆蓋晶圓。使用標準微影印刷技術,可對光阻劑進行圖案化以自除無機微透
鏡/金屬膜之弧形表面以外之所有區域移除光阻劑。可通過濕式蝕刻或通過乾式蝕刻來蝕除曝露之金屬。可移除剩餘之光阻劑,且可繼續進行標準BSI處理。
圖6說明根據本發明之一項實施例用於製造在金屬前介電層上具有弧形微鏡之背側照明裝置的製程。圖6(a)說明處理CMOS影像感測器(CIS)直至金屬1之步驟。圖6(b)說明在金屬前介電質(PMD)頂部上處理無機微透鏡(即,氧化矽或氮化矽)之步驟。圖6(c)說明將反射材料(諸如金屬)薄層毯覆式沈積在晶圓上之步驟。厚度將隨著材料、裝置架構及處理條件而變化,然而,預期此材料應處於奈米數量級(10nm至50nm)。圖6(d)說明接著用光阻劑覆蓋晶圓之步驟。圖6(e)說明使用標準微影印刷技術對光阻劑進行圖案化以自除無機微透鏡/金屬膜之弧形表面以外之所有區域處移除光阻劑之步驟。圖6(f)說明通過濕式或乾式蝕刻來蝕除曝露金屬之步驟。圖6(g)說明移除剩餘之光阻劑且繼續進行標準BSI處理之步驟。
圖7說明具有製造於金屬前介電層760內之弧形微鏡765之背側照明裝置700的示意橫截面部分。圖7之實施例之大部分架構類似於圖5之架構。微透鏡710耦接至平坦化層720。平坦化層720耦接至彩色濾光器730。彩色濾光器730耦接至平坦化層740。平坦化層740耦接至基板750。基板750耦接至金屬前介電(PMD)層760。與微鏡565形成於PMD層560頂部上之圖5實施例不同,在此實施例中,PMD層760在其中一體式形成有微鏡765。PMD層760耦接至層
間介電(ILD)層770及第一金屬層775。ILD層770耦接至層間介電(ILD)層780及第二金屬層785。ILD層780耦接至層間介電(ILD)層790及第三金屬層795。
在此實施例中,處理CIS直至金屬PMD沈積。此時,沈積PMD層760之一部分。可在PMD層760之第一部分之頂部上處理無機微透鏡710(例如,二氧化矽或氮化矽)。可在晶圓上毯覆式沈積反射材料(諸如金屬)薄層。反射材料層之厚度可約為10至50nm。接著可用光阻劑覆蓋晶圓。使用標準微影印刷技術,可對光阻劑進行圖案化以自除無機微透鏡/金屬膜之弧形表面以外之所有區域處移除光阻劑。可通過濕式或乾式蝕刻來蝕除曝露之金屬。可移除剩餘之光阻劑,且可沈積PMD層760之剩餘部分。可能需要例如通過CMP對PMD層760之剩餘部分進行平坦化。可自此點繼續進行標準BSI處理。此技術之缺點為,可能需要對PMD層760進行平坦化,此為額外處理步驟。
圖8說明根據本發明之一項實施例用於製造具有製造於金屬前介電層內之微鏡之背側照明裝置的步驟。圖8(a)說明處理CMOS影像感測器(CIS)直至金屬PMD沈積之步驟。此時,沈積PMD加厚物之一部分(PMD/n)。圖8(b)說明在第一PMD層頂部上處理無機微透鏡(即,氧化矽或氮化矽)之步驟。圖8(c)說明在晶圓上毯覆式沈積反射材料(諸如金屬)薄層之步驟。厚度將隨著材料、裝置架構及處理條件而變化,然而,預期此材料應處於奈米數量級(10nm至50nm)。圖8(d)說明接著用光阻劑覆蓋晶圓之步驟。圖8(e)說
明使用標準微影印刷技術對光阻劑進行圖案化以自除無機微透鏡/金屬膜之弧形表面以外之所有區域處移除光阻劑之步驟。圖8(f)說明通過濕式或乾式蝕刻來蝕除曝露金屬之步驟。圖8(g)說明移除剩餘之光阻劑且沈積PMD層之剩餘部分之步驟。視厚度而定,可能需要例如通過CMP對第二PMD層進行平坦化。圖8(h)說明繼續進行標準BSI處理之步驟。
在本發明之另一實施例中,圖9說明在形成任何金屬前介電層之前在基板940上製造有微鏡之背側照明裝置的示意橫截面部分。請注意,微鏡不與基板940直接接觸,而是位於與本發明無密切關係之各種其它薄層(例如,閘極氧化物、矽化物等…)之頂部上。因此,術語"在基板940上"為廣義的且通常意味著在任何厚介電層之前。在此實施例中,可處理CIS直至金屬PMD沈積步驟。可在矽表面之頂部上處理無機微透鏡(例如,氧化矽或氮化矽)。微透鏡與矽表面之間可能存在層,諸如接觸蝕刻終止層;此層通常由氧化矽或氮化矽製成。可在晶圓上毯覆式沈積反射材料(諸如金屬)薄層;此反射材料可為10至50nm厚。接著可用光阻劑覆蓋晶圓。使用標準微影印刷技術,可對光阻劑進行圖案化以自除無機微透鏡/金屬膜之弧形表面以外之所有區域移除光阻劑。可通過濕式或乾式蝕刻來蝕除曝露之金屬。可移除剩餘之光阻劑,且可自此點繼續進行標準BSI處理。視微鏡及PMD層之厚度而定,在標準BSI處理之前可能需要額外平坦化步驟。此實施例之優點在於,
其減小光將散射至鄰近裝置中之可能性。
圖10說明根據本發明之一項實施例用於製造具有製造於背側照明裝置之矽表面上之微鏡的背側照明裝置之步驟。圖10(a)說明處理CMOS影像感測器(CIS)直至金屬PMD沈積之步驟。圖10(b)說明在矽表面之頂部上處理無機微透鏡(即,氧化矽或氮化矽)之步驟。微透鏡與矽表面之間可能存在層,諸如接觸蝕刻終止層;該層通常由氧化矽或氮化矽製成。圖10(c)說明在晶圓上毯覆式沈積反射材料(諸如金屬)薄層之步驟。厚度將隨著材料、裝置架構及處理條件而變化,然而,預期此材料應處於奈米數量級(10nm至50nm)。圖10(d)說明接著用光阻劑覆蓋晶圓之步驟。圖10(e)說明使用標準微影印刷技術對光阻劑進行圖案化以自除無機微透鏡/金屬膜之弧形表面以外之所有區域移除光阻劑之步驟。圖10(f)說明通過濕式或乾式蝕刻來蝕除曝露金屬之步驟。圖10(g)說明移除剩餘之光阻劑且自此點繼續進行標準BSI處理之步驟。在此情況下,下一步驟將最有可能為PMD沈積。視新近形成之微鏡及PMD層之厚度而定,可能需要額外平坦化步驟。
圖11展示根據本發明之一項實施例製造微鏡之方法的流程圖1100。在步驟1110中,製造一影像感測器直至(但不包含)一第一金屬化層。在步驟1120中,在一金屬前介電(PMD)層之頂部上處理一無機微透鏡(即,氧化矽或氮化矽)。在步驟1130中,在晶圓上毯覆式沈積一反射材料(諸如金屬)薄層。厚度將隨著材料、裝置架構及處理條件而
變化,然而,預期此材料應處於奈米數量級(10nm至50nm)。
在步驟1140中,接著用光阻劑覆蓋晶圓。在步驟1150中,對光阻劑進行圖案化以自除無機微透鏡/金屬膜之弧形表面以外之所有區域移除光阻劑。在步驟1160中,通過濕式或乾式蝕刻來蝕除曝露之金屬。在步驟1170中,移除剩餘之光阻劑,且繼續進行標準BSI處理。
圖12展示根據本發明之一項實施例製造微鏡之方法的流程圖1200。在步驟1210中,製造一影像感測器直至(但不包含)一第一金屬化層。在步驟1220中,在該影像感測器之一金屬前介電(PMD)層之頂部上處理一無機微透鏡(即,氧化矽或氮化矽)。在步驟1230中,在晶圓上毯覆式沈積一反射材料(諸如金屬)薄層。厚度將隨著材料、裝置架構及處理條件而變化,然而,預期此材料應處於奈米數量級(10nm至50nm)。在步驟1240中,接著用光阻劑覆蓋晶圓。在步驟1250中,對光阻劑進行圖案化以自除無機微透鏡/金屬膜之弧形表面以外之所有區域移除光阻劑。在步驟1260中,通過濕式或乾式蝕刻來蝕除曝露之金屬。在步驟1270中,移除剩餘之光阻劑,且繼續進行標準BSI處理。
圖13展示根據本發明之替代實施例製造微鏡之方法的流程圖1300。在步驟1310中,製造一影像感測器直至(但不包含)一第一金屬化層。在步驟1320中,施加用於第一金屬化層之遮罩。該遮罩指定一微鏡。在步驟1330中,蝕刻
一第一金屬化層。在步驟1340中,沈積一第一金屬化層以形成一微鏡。
圖14展示根據本發明之替代實施例製造微鏡之方法的流程圖1400。在步驟1410中,製造一影像感測器直至金屬PMD沈積。此時,沈積PMD厚度之一部分(PMD/n)。在步驟1420中,在第一PMD層之頂部上處理一無機微透鏡(即,氧化矽或氮化矽)。在步驟1430中,在晶圓上毯覆式沈積反射材料(諸如金屬)薄層。厚度將隨著材料、裝置架構及處理條件而變化,然而,預期此材料應處於奈米數量級(10nm至50nm)。
在步驟1440中,接著用光阻劑覆蓋晶圓。在步驟1450中,使用標準微影印刷技術對光阻劑進行圖案化以自除無機微透鏡/金屬膜之弧形表面以外之所有區域移除光阻劑。在步驟1460中,通過濕式或乾式蝕刻來蝕除曝露之金屬。在步驟1470中,移除剩餘之光阻劑。在步驟1480中,沈積PMD層之剩餘部分。視厚度而定,可能需要例如通過CMP對第二PMD層進行平坦化。
自上文中將瞭解,本文已出於說明目的而描述本發明之特定實施例,但可在不脫離本發明精神及範圍之情況下作出各種修改。因此,本發明僅由附隨之申請專利範圍限定。
100‧‧‧影像感測器
110‧‧‧基板
120‧‧‧金屬前介電(PMD)層
130‧‧‧層間介電(ILD)層
135‧‧‧第一金屬層
140‧‧‧層間介電(ILD)層
145‧‧‧第二金屬層
150‧‧‧層間介電(ILD)層
155‧‧‧第三金屬層
160‧‧‧抗反射層
165‧‧‧平坦化層
170‧‧‧彩色濾光器
180‧‧‧平坦化層
190‧‧‧微透鏡
200‧‧‧背側照明裝置
210‧‧‧微透鏡
220‧‧‧平坦化層
230‧‧‧彩色濾光器
240‧‧‧平坦化層
250‧‧‧基板
260‧‧‧金屬前介電(PMD)層
270‧‧‧層間介電(ILD)層
275‧‧‧第一金屬層
280‧‧‧層間介電(ILD)層
285‧‧‧第二金屬層
290‧‧‧層間介電(ILD)層
295‧‧‧第三金屬層
300‧‧‧背側照明裝置
310‧‧‧微透鏡
320‧‧‧平坦化層
330‧‧‧彩色濾光器
340‧‧‧光二極體層
350‧‧‧金屬前介電(PMD)層
360‧‧‧平面微鏡
400‧‧‧背側照明裝置
460‧‧‧弧形微鏡
500‧‧‧背側照明裝置
510‧‧‧微透鏡
520‧‧‧平坦化層
530‧‧‧彩色濾光器
540‧‧‧平坦化層
550‧‧‧基板
560‧‧‧金屬前介電層
565‧‧‧弧形微鏡
570‧‧‧層間介電(ILD)層
575‧‧‧第一金屬層
580‧‧‧層間介電(ILD)層
585‧‧‧第二金屬層
590‧‧‧層間介電(ILD)層
595‧‧‧第三金屬層
700‧‧‧背側照明裝置
710‧‧‧微透鏡
720‧‧‧平坦化層
730‧‧‧彩色濾光器
740‧‧‧平坦化層
750‧‧‧基板
760‧‧‧金屬前介電(PMD)層
765‧‧‧微鏡
770‧‧‧層間介電(ILD)層
775‧‧‧第一金屬層
780‧‧‧層間介電(ILD)層
785‧‧‧第二金屬層
790‧‧‧層間介電(ILD)層
795‧‧‧第三金屬層
940‧‧‧基板
圖1說明具有微透鏡之先前技術CMOS影像感測器之示意橫截面部分。
圖2說明具有微透鏡之先前技術背側照明裝置之示意橫截面部分。
圖3說明具有自先前技術平面微鏡反射之光路徑之背側照明裝置的示意橫截面部分。
圖4說明根據本發明之一項實施例具有自弧形微鏡反射之光路徑之背側照明裝置的示意橫截面部分。
圖5說明根據本發明之一項實施例在金屬前介電層上具有弧形微鏡之背側照明裝置的示意橫截面部分。
圖6說明根據本發明之一項實施例用於製造在金屬前介電層上具有弧形微鏡之背側照明裝置的製程。
圖7說明根據本發明之一項實施例具有製造於金屬前介電層內之微鏡之背側照明裝置的示意橫截面部分。
圖8說明根據本發明之一項實施例用於製造具有製造於金屬前介電層內之微鏡之背側照明裝置的步驟。
圖9說明根據本發明之一項實施例具有製造於背側照明裝置之矽表面上之微鏡的背側照明裝置之示意橫截面部分。
圖10說明根據本發明之一項實施例用於製造具有製造於背側照明裝置之矽表面上之微鏡的背側照明裝置之步驟。
圖11展示根據本發明之一項實施例製造微鏡之方法的流程圖。
圖12展示根據本發明之一項實施例製造微鏡之方法的流程圖。
圖13展示根據本發明之一項實施例製造微鏡之方法的流
程圖。
圖14展示根據本發明之一項實施例製造微鏡之方法的流程圖。
400‧‧‧背側照明裝置
460‧‧‧弧形微鏡
Claims (20)
- 一種製造影像感測器之微鏡之方法,該方法包括:製造一影像感測器直至但不包含一第一金屬化層,其中該影像感測器包含一光敏元件,該光敏元件經組態以接收來自該影像感測器之一入射光側之光;在一金屬前介電層上製造一微透鏡;在該微透鏡及該金屬前介電層上沈積一反射材料金屬層;用光阻劑覆蓋該金屬層;對該光阻劑進行圖案化以自除該微透鏡之表面以外之所有區域移除該光阻劑,其中該金屬層係曝露於該光阻劑被移除之區域;蝕除曝露之該金屬層以形成一微鏡,其中該光敏元件係設置於該影像感測器之該入射光側與該微鏡之間;移除剩餘之光阻劑;及用一介電材料層覆蓋該微鏡。
- 如請求項1之方法,其中該影像感測器為一CMOS影像感測器。
- 如請求項1之方法,其中該影像感測器為一背側照明影像感測器。
- 如請求項1之方法,其中該金屬前介電層可達800奈米厚。
- 如請求項1之方法,其中該反射材料層為一金屬。
- 如請求項1之方法,其中該反射材料層之厚度在10與50 奈米之間。
- 如請求項1之方法,其中該微透鏡為弧形的。
- 如請求項7之方法,其中該微透鏡為凹面的。
- 一種製造影像感測器之微鏡之方法,該方法包括:製造一影像感測器直至但不包含一第一金屬化層,其中該影像感測器包含一光敏元件,該光敏元件經組態以接收來自該影像感測器之一入射光側之光;在一第一金屬前介電層上製造一微透鏡,其中該第一金屬前介電層為一金屬前介電(PMD)層之某一部分;在該微透鏡及該PMD層之第一部分上沈積一反射材料層;用光阻劑覆蓋該反射材料層;對該光阻劑進行圖案化以自除該微透鏡之表面以外之所有區域移除該光阻劑,其中該金屬層係曝露於該光阻劑被移除之區域;蝕除曝露之金屬,其中該光敏元件係設置於該影像感測器之該入射光側與該微鏡之間;移除剩餘之光阻劑;及在該微透鏡上沈積一第二金屬前介電層,其中該第二金屬前介電層為該PMD層之一剩餘部分。
- 如請求項9之方法,其中該PMD層被平坦化。
- 一種製造影像感測器之微鏡之方法,該方法包括:製造一影像感測器直至但不包含一第一金屬化層,其中該影像感測器包含一光敏元件,該光敏元件經組態以 接收來自該影像感測器之一入射光側之光;在該影像感測器之一矽表面上製造一微透鏡;在該微透鏡及矽表面上沈積一反射材料金屬層;在該影像感測器上沈積一反射材料層;用光阻劑覆蓋該影像感測器;對該光阻劑進行圖案化以自除該微透鏡以外之所有區域移除該光阻劑,其中該金屬層係曝露於該光阻劑被移除之區域;蝕除曝露之反射層,其中該光敏元件係設置於該影像感測器之該入射光側與該微鏡之間;移除剩餘之光阻劑;及用一介電材料層覆蓋該微鏡。
- 一種包括具有微鏡之影像感測器之設備,該影像感測器進一步包括:一金屬前介電層;一微透鏡,其耦接至該金屬前介電層;一金屬層,其耦接至該微透鏡且形成一微鏡;及一介電材料層,其覆蓋該微鏡,其中該影像感測器包含一光敏元件,該光敏元件經組態以接收來自該影像感測器之一入射光側之光,且其中該光敏元件係設置於該影像感測器之該入射光側與該微鏡之間。
- 如請求項12之設備,其進一步包括處於該金屬前介電層上之一弧形微鏡。
- 如請求項12之設備,其進一步包括處於該金屬前介電層內之一弧形微鏡。
- 一種包括具有微鏡之影像感測器之設備,該影像感測器進一步包括:一背側照明裝置;一金屬前介電層;一微透鏡,其耦接至該金屬前介電層;一金屬層,其耦接至該微透鏡且形成一微鏡;及一介電材料層,其覆蓋該微鏡,其中該影像感測器包含一光敏元件,該光敏元件經組態以接收來自該影像感測器之一入射光側之光,且其中該光敏元件係設置於該影像感測器之該入射光側與該微鏡之間。
- 如請求項15之設備,其進一步包括處於該金屬前介電層上之一弧形微鏡。
- 如請求項15之設備,其進一步包括處於該金屬前介電層內之一弧形微鏡。
- 一種包括具有微鏡之影像感測器之設備,該影像感測器進一步包括:一背側照明裝置;一微透鏡,其耦接至該背側照明裝置之一表面;一金屬層,其耦接至該微透鏡且形成一微鏡;及一介電材料層,其覆蓋該微鏡。
- 如請求項18之設備,其進一步包括一弧形微透鏡。
- 如請求項18之設備,其進一步包括一凹面微透鏡。
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EP1916714A1 (en) | 2008-04-30 |
US8338900B2 (en) | 2012-12-25 |
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