CN101188208B - 传感光电二极管上方具有曲面微镜的图像传感器及其制作方法 - Google Patents

传感光电二极管上方具有曲面微镜的图像传感器及其制作方法 Download PDF

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CN101188208B
CN101188208B CN200710163496.4A CN200710163496A CN101188208B CN 101188208 B CN101188208 B CN 101188208B CN 200710163496 A CN200710163496 A CN 200710163496A CN 101188208 B CN101188208 B CN 101188208B
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文森特·韦内齐亚
泰新吉
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Abstract

本发明涉及在CMOS图像传感器(CIS)工艺中在光电二极管有源区域(收集区域)上方集成曲面微镜。所述曲面微镜将已经穿过所述收集区域的光反射回到所述光电二极管中。所述曲面微镜最佳实施在背侧照明装置(BSI)中。

Description

传感光电二极管上方具有曲面微镜的图像传感器及其制作方法
技术领域
本发明涉及图像传感器装置，且更明确地说，涉及具有形成在光敏元件上方的微镜的图像传感器。 
背景技术
随着图像传感器和组成传感阵列的各个像素的尺寸由于进一步集成的缘故而变小，将尽可能多的入射光俘获到传感阵列上变得较为重要。 
解决此问题的方法包含使光敏元件(例如光电二极管)占据尽可能多的像素面积。另一种方法是在每一像素上方使用微透镜来将入射光聚焦到光电二极管上。微透镜方法试图俘获通常将入射在光电二极管区外部的像素部分上的光。 
此外，在背侧照明(BSI)装置中，可使用平面镜材料来将光穿过光电二极管反射回去，进而促使将更多入射光转换成电信号。 
发明内容
本发明涉及在CMOS图像传感器(CIS)工艺中在光电二极管有源区域(收集区域)上方集成曲面镜。曲面微镜将已经穿过收集区域的光反射回到光电二极管中。在一个实施例中，曲面微镜实施在BSI装置中。 
附图说明
图1说明具有微透镜的现有技术CMOS图像传感器的示意横截面部分。 
图2说明具有微透镜的现有技术背侧照明装置的示意横截面部分。 
图3说明具有从现有技术平面微镜反射的光路径的背侧照明装置的示意横截面部分。 
图4说明根据本发明的一个实施例具有从曲面微镜反射的光路径的背侧照明装置的示意横截面部分。 
图5说明根据本发明的一个实施例在金属前介电层上方具有曲面微镜的背侧照明装置的示意横截面部分。 
图6说明根据本发明的一个实施例用于制造在金属前介电层上方具有曲面微镜的背侧照明装置的工艺。 
图7说明根据本发明的一个实施例具有制作在金属前介电层内的微镜的背侧照明装 置的示意横截面部分。 
图8说明根据本发明的一个实施例用于制作具有制作在金属前介电层内的微镜的背侧照明装置的步骤。 
图9说明根据本发明的一个实施例具有制作在背侧照明装置的硅表面上的微镜的背侧照明装置的示意横截面部分。 
图10说明根据本发明的一个实施例用于制作具有制作在背侧照明装置的硅表面上的微镜的背侧照明装置的步骤。 
图11展示根据本发明的一个实施例制作微镜的方法的流程图。 
图12展示根据本发明的一个实施例制作微镜的方法的流程图。 
图13展示根据本发明的一个实施例制作微镜的方法的流程图。 
图14展示根据本发明的一个实施例制作微镜的方法的流程图。 
具体实施方式
在以下描述内容中，提供大量特定细节以便提供对本发明实施例的彻底理解。然而，相关领域的技术人员将了解，可在没有所述特定细节中的一者或一者以上的情况下或利用其它方法、组件、材料等来实践本发明。在其它情况下，未展示或描述众所周知的结构、材料或操作以便避免混淆本发明的各方面。 
整个说明书中对“一个实施例”或“实施例”的提及意味着结合所述实施例描述且包含在本发明的至少一个实施例中的特定特征、结构或特性。因此，整个说明书中各处出现短语“在一个实施例中”或“在实施例中”并不一定全部指代相同实施例。此外，在一个或一个以上实施例中可以任何适宜方式组合所述特定特征、结构或特性。 
图1说明具有微透镜190的现有技术CMOS图像传感器100的示意横截面部分。衬底110在其中形成有光电二极管且耦合到金属前介电(PMD)层120。金属前介电(PMD)层120耦合到层间介电(ILD)层130和第一金属层135。层间介电(ILD)层130耦合到层间介电(ILD)层140和第二金属层145。层间介电(ILD)层140耦合到层间介电(ILD)层150和第三金属层155。层间介电层150耦合到抗反射层160并位于抗反射层160下方。抗反射层160耦合到平面化层165并位于平面化层165下方。平面化层165耦合到彩色滤光器170。彩色滤光器170耦合到平面化层180。平面化层180耦合到微透镜190。 
图1所示的图像传感器的现有技术横截面可包含较少或较多的介电层和/或金属层。然而，一般概念是相同的，即光电二极管形成在衬底中，且各种介电层和金属层形成在衬底顶部上。此外，彩色滤光器层和微透镜形成在像素顶部上以完成横截面视图中的主要功能结构。图1展示从衬底的顶部表面入射光的常规“前侧”图像传感器。
图2说明具有微透镜210的现有技术背侧照明装置200的示意横截面部分。微透镜210耦合到平面化层220。平面化层220耦合到彩色滤光器230。彩色滤光器230耦合到平面化层240。最后，平面化层240形成在含有光电二极管的衬底250的背侧(或底部表面)。在衬底250的顶部表面上，衬底具有如图1所示的各种介电层和金属层，所述介电层和金属层用于向像素和/或传感阵列的其它组件进行电互连。因此，衬底250耦合到金属前介电(PMD)层260。PMD层260耦合到层间介电(ILD)层270和第一金属层275。ILD层270耦合到层间介电(ILD)层280和第二金属层285。ILD层280耦合到层间介电(ILD)层290和第三金属层295。 
图3说明具有从平面微镜360反射的光路径的现有技术背侧照明装置300的示意横截面部分。微透镜310耦合到平面化层320。平面化层320耦合到彩色滤光器330。彩色滤光器330耦合到光电二极管层340。光电二极管层340耦合到金属前介电(PMD)层350。PMD层350耦合到平面微镜360。入射光受到损失，或更糟糕地导致对邻近像素产生串扰。 
图4说明本发明的优点。图4展示具有从曲面微镜460反射的光路径的背侧照明装置400的示意横截面部分。可以看到且与图3形成对比，曲面微镜460有效地俘获较多量的“穿过”入射光并穿过光电二极管区域将其重新引导回去。这对于增加光电二极管所产生的信号是有利的。 
图5说明根据本发明的一个实施例在金属前介电层560上方具有曲面微镜565的背侧照明装置500的示意横截面部分。从以下论述中将容易了解到，微镜565可放置在包含层560-590的“介电堆叠”中的多种位置中。事实上，微镜565可放置在衬底550与金属前介电层560之间，或放置在内层介电层590顶部上。精确放置通常取决于图像传感器的各种特定设计参数和尺寸，但通常被放置成使到光电二极管上的光反射最大化。 
如图5中可见，在衬底550的背侧上，微透镜510耦合到平面化层520。平面化层520耦合到彩色滤光器530。彩色滤光器530耦合到平面化层540。最后，平面化层540耦合到衬底550。 
在衬底550的顶侧上，金属前介电(PMD)层560形成在衬底550的顶部上。PMD层560耦合到曲面微镜565。PMD层560还耦合到层间介电(ILD)层570和第一金属层575。ILD层570耦合到层间介电(ILD)层580和第二金属层585。ILD层580耦合到层间介电(ILD)层590和第三金属层595。 
在本发明的一个实施例中，可处理CIS直到第一金属层，且在PMD层560顶部上处理无机微透镜。反射材料(例如，金属)薄层可毯覆式沉积在晶片上方；反射材料的厚度可约为10到50nm。接着可用光致抗蚀剂覆盖晶片。使用标准平版印刷技术，可对光致抗蚀剂进行图案化以从除无机微透镜/金属膜的弯曲表面以外的所有区域处去除光致抗蚀剂。可通过湿式蚀刻或通过干式蚀刻来蚀刻掉暴露的金属。可去除剩余的光致抗蚀剂，且可继续进行标准BSI处理。 
图6说明根据本发明的一个实施例用于制造在金属前介电层上方具有曲面微镜的背侧照明装置的工艺。图6(a)说明处理CMOS图像传感器(CIS)直到金属1的步骤。图6(b)说明在金属前电介质(PMD)顶部上处理无机微透镜(即，氧化硅或氮化硅)的步骤。图6(c)说明将反射材料(例如金属)薄层毯覆式沉积在晶片上方的步骤。厚度将随着材料、装置结构和处理条件而变化，然而，预期此材料应处于纳米数量级(10nm到50nm)。图6(d)说明接着用光致抗蚀剂覆盖晶片的步骤。图6(e)说明使用标准平版印刷技术对光致抗蚀剂进行图案化以从除无机微透镜/金属膜的弯曲表面以外的所有区域处去除抗蚀剂的步骤。图6(f)说明通过湿式或干式蚀刻来蚀刻掉暴露金属的步骤。图6(g)说明去除剩余的光致抗蚀剂且继续进行标准BSI处理的步骤。 
图7说明具有制作在金属前介电层760内的曲面微镜765的背侧照明装置700的示意横截面部分。图7的实施例的大部分结构类似于图5的结构。微透镜710耦合到平面化层720。平面化层720耦合到彩色滤光器730。彩色滤光器730耦合到平面化层740。平面化层740耦合到衬底750。衬底750耦合到金属前介电(PMD)层760。与微镜565形成在PMD层560顶部上的图5实施例不同，在此实施例中，PMD层760在其中一体式形成有微镜765。PMD层760耦合到层间介电(ILD)层770和第一金属层775。ILD层770耦合到层间介电(ILD)层780和第二金属层785。ILD层780耦合到层间介电(ILD)层790和第三金属层795。 
在此实施例中，处理CIS直到PMD沉积。此时，沉积PMD层760的一部分。可在PMD层760的第一部分的顶部上处理无机微透镜710(例如，二氧化硅或氮化硅)。可在晶片上方毯覆式沉积反射材料(例如金属)薄层。反射材料层的厚度可约为10到50nm。接着可用光致抗蚀剂覆盖晶片。使用标准平版印刷技术，可对光致抗蚀剂进行图案化以从除无机微透镜/金属膜的弯曲表面以外的所有区域处去除光致抗蚀剂。可通过湿式或干式蚀刻来蚀刻掉暴露的金属。可去除剩余的光致抗蚀剂，且可沉积PMD层760的剩余部分。可能需要例如通过CMP对PMD层760的剩余部分进行平面化。可从此点继续进行标准BSI处理。此技术的缺点是，可能需要对PMD层760进行平面化，这是额 外的处理步骤。 
图8说明根据本发明的一个实施例用于制作具有制作在金属前介电层内的微镜的背侧照明装置的步骤。图8(a)说明处理CMOS图像传感器(CIS)直到PMD沉积的步骤。此时，沉积PMD加厚物的一部分(PMD/n)。图8(b)说明在第一PMD层顶部上处理无机微透镜(即，氧化硅或氮化硅)的步骤。图8(c)说明在晶片上毯覆式沉积反射材料(例如金属)薄层的步骤。厚度将随着材料、装置结构和处理条件而变化，然而，预期此材料应处于纳米数量级(10nm到50nm)。图8(d)说明接着用光致抗蚀剂覆盖晶片的步骤。图8(e)说明使用标准平版印刷技术对光致抗蚀剂进行图案化以从除无机微透镜/金属膜的弯曲表面以外的所有区域处去除抗蚀剂的步骤。图8(f)说明通过湿式或干式蚀刻来蚀刻掉暴露金属的步骤。图8(g)说明去除剩余的光致抗蚀剂且沉积PMD层的剩余部分的步骤。依据厚度而定，可能需要例如通过CMP对第二PMD层进行平面化。图8(h)说明继续进行标准BSI处理的步骤。 
在本发明的另一实施例中，图9说明在形成任何金属前介电层之前在衬底940上制作有微镜的背侧照明装置的示意横截面部分。请注意，微镜不与衬底940直接接触，而是位于与本发明无密切关系的各种其它薄层(例如，栅极氧化物、硅化物等...)的顶部上。因此，术语“在衬底940上”是广义的且通常意味着在任何厚介电层之前。在此实施例中，可处理CIS直到PMD沉积步骤。可在硅表面的顶部上处理无机微透镜(例如，氧化硅或氮化硅)。微透镜与硅表面之间可能存在层，例如接触蚀刻终止层；此类层通常由氧化硅或氮化硅制成。可在晶片上毯覆式沉积反射材料(例如金属)薄层；此反射材料可为10到50nm厚。接着可用光致抗蚀剂覆盖晶片。使用标准平版印刷技术，可对光致抗蚀剂进行图案化以从除无机微透镜/金属膜的弯曲表面以外的所有区域处去除抗蚀剂。可通过湿式或干式蚀刻来蚀刻掉暴露的金属。可去除剩余的光致抗蚀剂，且可从此点继续进行标准BSI处理。依据微镜和PMD层的厚度而定，在标准BSI处理之前可能需要额外的平面化步骤。此实施例的优点在于，其减小光将散射到邻近装置中的可能性。 
图10说明根据本发明的一个实施例用于制作具有制作在背侧照明装置的硅表面上的微镜的背侧照明装置的步骤。图10(a)说明处理CMOS图像传感器(CIS)直到PMD沉积的步骤。图10(b)说明在硅表面的顶部上处理无机微透镜(即，氧化硅或氮化硅)的步骤。微透镜与硅表面之间可能存在层，例如接触蚀刻终止层；所述层通常由氧化硅或氮化硅制成。图10(c)说明在晶片上方毯覆式沉积反射材料(例如金属)薄层的步骤。厚度将随着材料、装置结构和处理条件而变化，然而，预期此材料应处于纳米数量级 (10nm到50nm)。图10(d)说明接着用光致抗蚀剂覆盖晶片的步骤。图10(e)说明使用标准平版印刷技术对光致抗蚀剂进行图案化以从除无机微透镜/金属膜的弯曲表面以外的所有区域处去除抗蚀剂的步骤。图10(f)说明通过湿式或干式蚀刻来蚀刻掉暴露金属的步骤。图10(g)说明去除剩余的光致抗蚀剂且从此点继续进行标准BSI处理的步骤。在此情况下，下一步骤将最有可能是PMD沉积。依据新近形成的微镜和PMD层的厚度而定，可能需要额外的平面化步骤。 
图11展示根据本发明的一个实施例制作微镜的方法的流程图1100。在步骤1110中，制作图像传感器直到(但不包含)第一金属化层。在步骤1120中，在金属前介电(PMD)层的顶部上处理无机微透镜(即，氧化硅或氮化硅)。在步骤1130中，在晶片上方毯覆式沉积反射材料(例如金属)薄层。厚度将随着材料、装置结构和处理条件而变化，然而，预期此材料应处于纳米数量级(10nm到50nm)。 
在步骤1140中，接着用光致抗蚀剂覆盖晶片。在步骤1150中，对光致抗蚀剂进行图案化以从除无机微透镜/金属膜的弯曲表面以外的所有区域处去除抗蚀剂。在步骤1160中，通过湿式或干式蚀刻来蚀刻掉暴露的金属。在步骤1170中，去除剩余的光致抗蚀剂，且继续进行标准BSI处理。 
图12展示根据本发明的一个实施例制作微镜的方法的流程图1200。在步骤1210中，制作图像传感器直到(但不包含)第一金属化层。在步骤1220中，在图像传感器的金属前介电(PMD)层的顶部上处理无机微透镜(即，氧化硅或氮化硅)。在步骤1230中，在晶片上方毯覆式沉积反射材料(例如金属)薄层。厚度将随着材料、装置结构和处理条件而变化，然而，预期此材料应处于纳米数量级(10nm到50nm)。在步骤1240中，接着用光致抗蚀剂覆盖晶片。在步骤1250中，对光致抗蚀剂进行图案化以从除无机微透镜/金属膜的弯曲表面以外的所有区域处去除抗蚀剂。在步骤1260中，通过湿式或干式蚀刻来蚀刻掉暴露的金属。在步骤1270中，去除剩余的光致抗蚀剂，且继续进行标准BSI处理。 
图13展示根据本发明的替代实施例制作微镜的方法的流程图1300。在步骤1310中，制作图像传感器直到(但不包含)第一金属化层。在步骤1320中，施加用于第一金属化层的掩模。所述掩模指定微镜。在步骤1330中，蚀刻第一金属化层。在步骤1340中，沉积第一金属化层以形成微镜。 
图14展示根据本发明的替代实施例制作微镜的方法的流程图1400。在步骤1410中，制作图像传感器直到PMD沉积。此时，沉积PMD厚度的一部分(PMD/n)。在步 骤1420中，在第一PMD层的顶部上处理无机微透镜(即，氧化硅或氮化硅)。在步骤1430中，在晶片上方毯覆式沉积反射材料(例如金属)薄层。厚度将随着材料、装置结构和处理条件而变化，然而，预期此材料应处于纳米数量级(10nm到50nm)。 
在步骤1440中，接着用光致抗蚀剂覆盖晶片。在步骤1450中，使用标准平版印刷技术对光致抗蚀剂进行图案化以从除无机微透镜/金属膜的弯曲表面以外的所有区域处去除抗蚀剂。在步骤1460中，通过湿式或干式蚀刻来蚀刻掉暴露的金属。在步骤1470中，去除剩余的光致抗蚀剂。在步骤1480中，沉积PMD层的剩余部分。依据厚度而定，可能需要例如通过CMP对第二PMD层进行平面化。 
从上文中将了解，本文已出于说明目的描述了本发明的特定实施例，但可在不脱离本发明精神和范围的情况下作出各种修改。因此，本发明仅由所附权利要求书限定。 

Claims (16)

1.一种制作用于图像传感器的微镜的方法，其包括：
制作所述图像传感器直到但不包含第一金属化层，其中所述图像传感器包含一构建以自所述图像传感器的光入射侧接收光的光敏元件；
在金属前介电层上制作微透镜；
在所述微透镜和金属前介电层上沉积反射材料金属层；
用光致抗蚀剂覆盖所述金属层；
对所述光致抗蚀剂进行图案化以从除所述微透镜的表面以外的所有区域处去除所述光致抗蚀剂，其中所述金属层暴露于所述光致抗蚀剂去除的地方；
蚀刻掉暴露的所述金属层以形成所述微镜，其中所述光敏元件设置于所述图像传感器的所述光入射侧及所述微镜之间；
去除剩余的光致抗蚀剂；以及
用介电材料层覆盖所述微镜。
2.根据权利要求1所述的方法，其中所述图像传感器是CMOS图像传感器。
3.根据权利要求1所述的方法，其中所述图像传感器是背侧照明图像传感器。
4.根据权利要求1所述的方法，其中所述金属前介电层为800纳米厚。
5.根据权利要求1所述的方法，其中所述反射材料金属层的厚度在10与50纳米之间。
6.根据权利要求1所述的方法，其中所述微透镜是曲面的。
7.根据权利要求6所述的方法，其中所述微镜是凹面的。
8.一种包括具有微镜的图像传感器的设备，所述图像传感器进一步包括：
金属前介电层；
微透镜，其耦合到所述金属前介电层；
金属层，其耦合到所述微透镜且形成微镜；
介电材料层，其覆盖所述微镜或所述金属前介电层；以及
一光敏元件，构建以自所述图像传感器的光入射侧接收光，其中所述光敏元件设置于所述图像传感器的所述光入射侧及所述微镜之间。
9.根据权利要求8所述的设备，其中所述微镜为处于所述金属前介电层上方的曲面微镜。
10.根据权利要求8所述的设备，其中所述微镜为处于所述金属前介电层内的曲面微镜。
11.一种包括具有微镜的图像传感器的设备，所述图像传感器进一步包括：
背侧照明装置；
金属前介电层；
微透镜，其耦合到所述金属前介电层；
金属层，其耦合到所述微透镜且形成微镜；
介电材料层，其覆盖所述微镜或所述金属前介电层；以及
一光敏元件，构建以自所述图像传感器的光入射侧接收光，其中所述光敏元件设置于所述图像传感器的所述光入射侧及所述微镜之间。
12.根据权利要求11所述的设备，其中所述微镜为处于所述金属前介电层上方的曲面微镜。
13.根据权利要求11所述的设备，其中所述微镜为处于所述金属前介电层内的曲面微镜。
14.一种包括具有微镜的图像传感器的设备，所述图像传感器进一步包括：
背侧照明装置；
微透镜，其耦合到所述背侧照明装置的表面；
金属层，其耦合到所述微透镜且形成微镜；
介电材料层，其覆盖所述微镜；以及
一光敏元件，构建以自所述图像传感器的光入射侧接收光，其中所述光敏元件设置于所述图像传感器的所述光入射侧及所述微镜之间。
15.根据权利要求14所述的设备，其中所述微镜为曲面微镜。
16.根据权利要求14所述的设备，其中所述微镜为凹面微镜。
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