US20090321798A1 - CMOS Image Sensor and Method of Manufacturing the Same - Google Patents
CMOS Image Sensor and Method of Manufacturing the Same Download PDFInfo
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- US20090321798A1 US20090321798A1 US12/553,408 US55340809A US2009321798A1 US 20090321798 A1 US20090321798 A1 US 20090321798A1 US 55340809 A US55340809 A US 55340809A US 2009321798 A1 US2009321798 A1 US 2009321798A1
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- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 26
- 230000000873 masking effect Effects 0.000 abstract description 9
- 238000005245 sintering Methods 0.000 abstract description 9
- 239000002245 particle Substances 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 97
- 239000011229 interlayer Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Definitions
- the present invention relates to an image sensor. More particularly, the present invention relates an image sensor having an improved light receiving function.
- image sensors are semiconductor devices for converting optical images into electric signals, and are mainly classified into a CCD (Charge Coupled Device) image sensor and a CMOS (Complementary Metal Oxide Semiconductor) image sensor.
- CCD Charge Coupled Device
- CMOS Complementary Metal Oxide Semiconductor
- the CMOS image sensor includes a photodiode for detecting light and a logic circuit for converting detected light into electric signals to make them as data. As quantity of light received in the photodiode increases, the photo sensitivity of the image sensor is improved.
- a fill factor which is a ratio of a photodiode area to the whole area of the image sensor, must be increased, or a photo-gathering technology is used to change the path of light incident onto an area other than the photodiode area such that the light can be gathered in the photodiode.
- a representative example of the photo-gathering technology is to make a micro-lens. That is, a convex micro-lens is formed on a top surface of the photodiode using a material having superior light transmittance, thereby refracting the path of incident light in such a manner that a greater amount of light can be transmitted into the photo-diode area.
- FIG. 1 is a schematic sectional view illustrating a conventional CMOS image sensor.
- the conventional CMOS image sensor has a cell area and a scribe area.
- the cell area includes a semiconductor substrate 11 , a metal interconnection 12 , an interlayer dielectric layer 13 , and a SiN layer 14 .
- the scribe area includes the semiconductor substrate 11 , the interlayer dielectric layer 13 , and the SiN layer 14 .
- the interlayer dielectric layer 13 includes a USG (undoped silicate glass) layer.
- red, green and blue color filter layers are formed on the SiN layer 14 , a planar layer and a micro-lens are sequentially formed on the color filter layers.
- a CMP (Chemical Mechanical Polishing) process is performed to reduce the thickness by 4000 ⁇ to form the interlayer dielectric layer.
- the SiN layer is formed on the interlayer dielectric layer.
- a photoresist film is deposited.
- the photoresist film is subject to the exposure and development process to form a photoresist pattern form forming a contact hole.
- the SiN layer and the interlayer dielectric layer are etched by using the patterned photoresist film as a mask, thereby forming the contact hole.
- the SiN layer and the interlayer dielectric layer are sintered, thereby obtaining final interlayer dielectric layer and SiN layer.
- the color filter layers are formed.
- adhesion force between the USG layer and the SiN layer may be lowered at the scribe area during the sintering process.
- adhesion force between the USG layer and the SiN layer may not be lowered at the cell area during the sintering process.
- the scribe area is prepared in the form of a wide dummy area without including the metal patterns. For this reason, SiN particles may drop onto the USG layer during the sintering process, thereby causing fatal damage to the image sensor after the subsequent process (color filter process) has been completed.
- the present invention has been made to solve the above-mentioned problem(s), and a first object of the present invention is to provide a method of manufacturing a CMOS image sensor, capable of preventing SiN particles from dropping onto a USG layer such that damage is not caused to the CMOS image sensor.
- a second object of the present invention is to provide a CMOS sensor capable of preventing SiN particles from dropping onto a USG layer such that damage is not caused to the CMOS image sensor.
- the present invention provides a method of fabricating a CMOS sensor, the method comprising the steps of: forming a first USG layer on an entire surface of a semiconductor substrate including a cell area and a scribe area; masking the cell area, and then removing the first USG layer formed on the scribe area; forming a SiN layer on the entire surface of the semiconductor substrate; masking the cell area, and then removing the SiN layer formed on the scribe area; forming a second USG layer on the entire surface of the semiconductor substrate; and masking the scribe area, and then removing the second USG layer formed on the cell area.
- the USG layer is only formed on the scribe layer without the SiN layer, so that SiN particles do not drop onto the USG layer during the sintering process.
- the step of forming the first USG layer includes the sub-steps of: forming a USG layer; forming a TEOS layer; and removing the TEOS layer and a predetermined portion of the USG layer through chemical mechanical polishing (CMP).
- CMP chemical mechanical polishing
- the method further includes a step of forming contact holes in the first USG layer and the SiN layer formed on the cell area, after removing the second USG layer.
- the step of forming the contact holes includes the sub-steps of: depositing a photoresist film on the SiN layer, and forming a photoresist pattern to form the contact holes through an exposure and development process; forming the contact holes by etching the SiN layer and the first USG layer using the photoresist pattern as an etch mask; and sintering the SiN layer and the first USG layer.
- the method may further include a step of forming color filter layers, after forming the contact holes.
- the method may further include a step of forming a metal interconnection, before the first USG layer is formed on the entire surface of the semiconductor substrate.
- the present invention provides a CMOS sensor comprising: a semiconductor substrate including a cell area and a scribe area; a first USG layer and a SiN layer, which are sequentially formed on the cell area of the semiconductor substrate; and a second USG layer formed on the scribe area of the semiconductor substrate.
- FIG. 1 is a schematic sectional view illustrating a conventional CMOS image sensor
- FIGS. 2A to 2C are schematic sectional views illustrating the procedure for manufacturing a CMOS image sensor according to an embodiment of the present invention.
- FIG. 3 is a schematic sectional view illustrating a CMOS image sensor according to an embodiment of the present invention.
- FIGS. 2A to 2C are schematic sectional views illustrating the procedure for manufacturing a CMOS image sensor according to an embodiment of the present invention.
- a metal interconnection 120 is formed on a semiconductor substrate 110 including a cell area and a scribe area.
- a first USG layer 130 is formed on the entire surface of the semiconductor substrate 110 . Then, after masking the cell area, the first USG layer 130 formed on the scribe area is removed.
- the process for forming the first USG layer 130 on the entire surface of the semiconductor substrate 110 includes steps of forming a USG layer and a TEOS layer, and removing the TEOS layer and a predetermined portion of the USG layer through the CMP process.
- a SiN layer 140 is formed on the entire surface of the semiconductor substrate 110 . Then, after masking the cell area, the SiN layer 140 formed on the scribed area is removed.
- a second USG layer 130 a is formed on the entire surface of the semiconductor substrate 110 . Then, after masking the cell area, the second USG layer 130 a formed on the cell area is removed.
- the first USG layer 130 , and the SiN layer 140 is formed on the cell area and the second USG layer 130 a is formed on the scribe area. That is, since only the USG layer is formed on the scribe area, the SiN layer may not drop onto the USG layer during the sintering process, which is the subsequent process.
- contact holes are formed in the first USG layer 130 and the SiN layer 140 formed in the cell area, after the process shown in FIG. 2C has been finished.
- the process for forming the contact holes includes the steps of depositing a photoresist film on the SiN layer 140 , forming a photoresist pattern to form the contact holes through the exposure and development process, forming the contact holes by etching the SiN layer 140 and the first USG layer 130 using the photoresist pattern as an etch mask, and sintering the SiN layer 140 and the first USG layer 130 .
- the color filter layers are formed.
- FIG. 3 is a schematic sectional view illustrating a CMOS image sensor according to an embodiment of the present invention.
- the CMOS image sensor according to the present invention includes the semiconductor substrate 110 having the cell area and the scribe area, the first USG layer 130 and the SiN layer 140 , which are sequentially formed on the cell area of the semiconductor substrate, and the second USG layer 130 a formed on the scribe area of the semiconductor substrate 110 .
- a metal interconnection is formed below the first USG layer 130 formed on the cell area.
- the color filter layers are formed on the SiN layer 140 formed on the cell area.
- the USG layer is only formed on the scribe layer without the SiN layer, so that SiN particles may not drop onto the USG layer during the sintering process, thereby improving the characteristics of the CMOS image sensor.
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- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Disclosed are a CMOS sensor and a method of fabricating the CMOS sensor. The method includes the steps of: forming a first USG layer on an entire surface of a semiconductor substrate including a cell area and a scribe area; masking the cell area, and then removing the first USG layer formed on the scribe area; forming a SiN layer on the entire surface of the semiconductor substrate; masking the cell area, and then removing the SiN layer formed on the scribe area; forming a second USG layer on the entire surface of the semiconductor substrate; and masking the scribe area, and then removing the second USG layer formed on the cell area. The USG layer is only formed on the scribe layer without the SiN layer, so that SiN particles do not drop onto the USG layer during the sintering process.
Description
- This application is a divisional of co-pending U.S. application Ser. No. 11/646,797 filed Dec. 27, 2006 (Attorney Docket No. SPO200611-0022US), which claims the benefit of the Korean Application No. 10-2005-0133786, filed on Dec. 29, 2005, each of which is hereby incorporated by reference in its entirety.
- 1. Field of the Invention
- The present invention relates to an image sensor. More particularly, the present invention relates an image sensor having an improved light receiving function.
- 2. Description of the Related Art
- In general, image sensors are semiconductor devices for converting optical images into electric signals, and are mainly classified into a CCD (Charge Coupled Device) image sensor and a CMOS (Complementary Metal Oxide Semiconductor) image sensor.
- The CMOS image sensor includes a photodiode for detecting light and a logic circuit for converting detected light into electric signals to make them as data. As quantity of light received in the photodiode increases, the photo sensitivity of the image sensor is improved.
- To improve the photo sensitivity, either a fill factor, which is a ratio of a photodiode area to the whole area of the image sensor, must be increased, or a photo-gathering technology is used to change the path of light incident onto an area other than the photodiode area such that the light can be gathered in the photodiode.
- A representative example of the photo-gathering technology is to make a micro-lens. That is, a convex micro-lens is formed on a top surface of the photodiode using a material having superior light transmittance, thereby refracting the path of incident light in such a manner that a greater amount of light can be transmitted into the photo-diode area.
- Hereinafter, a method of manufacturing a conventional CMOS image sensor will be described with reference to the attached drawings.
-
FIG. 1 is a schematic sectional view illustrating a conventional CMOS image sensor. - As shown in
FIG. 1 , the conventional CMOS image sensor has a cell area and a scribe area. The cell area includes asemiconductor substrate 11, ametal interconnection 12, an interlayerdielectric layer 13, and aSiN layer 14. - In addition, the scribe area includes the
semiconductor substrate 11, the interlayerdielectric layer 13, and theSiN layer 14. - The interlayer
dielectric layer 13 includes a USG (undoped silicate glass) layer. - Although not shown in the drawings, red, green and blue color filter layers are formed on the
SiN layer 14, a planar layer and a micro-lens are sequentially formed on the color filter layers. - Hereinafter, a process of forming a contact hole of the interlayer
dielectric layer 13 and theSiN layer 14 of the CMOS image sensor will be described. - First, after forming the USG layer having a thickness of about 10000 Å and a TEOS (Tetra Ethyl Ortho Silicate) having a thickness of about 4000 Å, a CMP (Chemical Mechanical Polishing) process is performed to reduce the thickness by 4000 Å to form the interlayer dielectric layer.
- Then, the SiN layer is formed on the interlayer dielectric layer.
- After that, a photoresist film is deposited. The photoresist film is subject to the exposure and development process to form a photoresist pattern form forming a contact hole.
- Then, the SiN layer and the interlayer dielectric layer (USG layer) are etched by using the patterned photoresist film as a mask, thereby forming the contact hole.
- In addition, the SiN layer and the interlayer dielectric layer (USG layer) are sintered, thereby obtaining final interlayer dielectric layer and SiN layer.
- After obtaining the interlayer dielectric layer and SiN layer, the color filter layers are formed.
- However, according to the above conventional CMOS image sensor, adhesion force between the USG layer and the SiN layer may be lowered at the scribe area during the sintering process.
- Since the cell area is densely packed with metal patterns, etc., adhesion force between the USG layer and the SiN layer may not be lowered at the cell area during the sintering process.
- However, the scribe area is prepared in the form of a wide dummy area without including the metal patterns. For this reason, SiN particles may drop onto the USG layer during the sintering process, thereby causing fatal damage to the image sensor after the subsequent process (color filter process) has been completed.
- The present invention has been made to solve the above-mentioned problem(s), and a first object of the present invention is to provide a method of manufacturing a CMOS image sensor, capable of preventing SiN particles from dropping onto a USG layer such that damage is not caused to the CMOS image sensor.
- A second object of the present invention is to provide a CMOS sensor capable of preventing SiN particles from dropping onto a USG layer such that damage is not caused to the CMOS image sensor.
- In order to accomplish the first object, the present invention provides a method of fabricating a CMOS sensor, the method comprising the steps of: forming a first USG layer on an entire surface of a semiconductor substrate including a cell area and a scribe area; masking the cell area, and then removing the first USG layer formed on the scribe area; forming a SiN layer on the entire surface of the semiconductor substrate; masking the cell area, and then removing the SiN layer formed on the scribe area; forming a second USG layer on the entire surface of the semiconductor substrate; and masking the scribe area, and then removing the second USG layer formed on the cell area.
- That is, according to the present invention, the USG layer is only formed on the scribe layer without the SiN layer, so that SiN particles do not drop onto the USG layer during the sintering process.
- The step of forming the first USG layer includes the sub-steps of: forming a USG layer; forming a TEOS layer; and removing the TEOS layer and a predetermined portion of the USG layer through chemical mechanical polishing (CMP).
- The method further includes a step of forming contact holes in the first USG layer and the SiN layer formed on the cell area, after removing the second USG layer.
- The step of forming the contact holes includes the sub-steps of: depositing a photoresist film on the SiN layer, and forming a photoresist pattern to form the contact holes through an exposure and development process; forming the contact holes by etching the SiN layer and the first USG layer using the photoresist pattern as an etch mask; and sintering the SiN layer and the first USG layer.
- The method may further include a step of forming color filter layers, after forming the contact holes.
- The method may further include a step of forming a metal interconnection, before the first USG layer is formed on the entire surface of the semiconductor substrate.
- In order to accomplish the second object, the present invention provides a CMOS sensor comprising: a semiconductor substrate including a cell area and a scribe area; a first USG layer and a SiN layer, which are sequentially formed on the cell area of the semiconductor substrate; and a second USG layer formed on the scribe area of the semiconductor substrate.
-
FIG. 1 is a schematic sectional view illustrating a conventional CMOS image sensor; -
FIGS. 2A to 2C are schematic sectional views illustrating the procedure for manufacturing a CMOS image sensor according to an embodiment of the present invention; and -
FIG. 3 is a schematic sectional view illustrating a CMOS image sensor according to an embodiment of the present invention. - Hereinafter, preferred embodiments of the present invention will be described with reference to accompanying drawings.
-
FIGS. 2A to 2C are schematic sectional views illustrating the procedure for manufacturing a CMOS image sensor according to an embodiment of the present invention. - First, as shown in
FIG. 2A , ametal interconnection 120 is formed on asemiconductor substrate 110 including a cell area and a scribe area. - After that, a
first USG layer 130 is formed on the entire surface of thesemiconductor substrate 110. Then, after masking the cell area, thefirst USG layer 130 formed on the scribe area is removed. - The process for forming the
first USG layer 130 on the entire surface of thesemiconductor substrate 110 includes steps of forming a USG layer and a TEOS layer, and removing the TEOS layer and a predetermined portion of the USG layer through the CMP process. - Next, as shown in
FIG. 2B , aSiN layer 140 is formed on the entire surface of thesemiconductor substrate 110. Then, after masking the cell area, theSiN layer 140 formed on the scribed area is removed. - After that, as shown in
FIG. 2C , asecond USG layer 130 a is formed on the entire surface of thesemiconductor substrate 110. Then, after masking the cell area, thesecond USG layer 130 a formed on the cell area is removed. - Accordingly, the
first USG layer 130, and theSiN layer 140 is formed on the cell area and thesecond USG layer 130 a is formed on the scribe area. That is, since only the USG layer is formed on the scribe area, the SiN layer may not drop onto the USG layer during the sintering process, which is the subsequent process. - Next, although not shown in the drawings, contact holes are formed in the
first USG layer 130 and theSiN layer 140 formed in the cell area, after the process shown inFIG. 2C has been finished. - The process for forming the contact holes includes the steps of depositing a photoresist film on the
SiN layer 140, forming a photoresist pattern to form the contact holes through the exposure and development process, forming the contact holes by etching theSiN layer 140 and thefirst USG layer 130 using the photoresist pattern as an etch mask, and sintering theSiN layer 140 and thefirst USG layer 130. - Next, after forming the contact holes, the color filter layers are formed.
-
FIG. 3 is a schematic sectional view illustrating a CMOS image sensor according to an embodiment of the present invention. - As shown in
FIG. 3 , the CMOS image sensor according to the present invention includes thesemiconductor substrate 110 having the cell area and the scribe area, thefirst USG layer 130 and theSiN layer 140, which are sequentially formed on the cell area of the semiconductor substrate, and thesecond USG layer 130 a formed on the scribe area of thesemiconductor substrate 110. - In addition, a metal interconnection is formed below the
first USG layer 130 formed on the cell area. - Although not shown in the drawings, the color filter layers are formed on the
SiN layer 140 formed on the cell area. - As described above, according to the present invention, the USG layer is only formed on the scribe layer without the SiN layer, so that SiN particles may not drop onto the USG layer during the sintering process, thereby improving the characteristics of the CMOS image sensor.
Claims (9)
1. A CMOS sensor comprising:
a semiconductor substrate including a cell area and a scribe area;
a first oxide layer and a SiN layer thereon in the cell area of the semiconductor substrate; and a second oxide layer in the scribe area of the semiconductor substrate, wherein the second oxide layer in the scribe area has a thickness about equal to a thickness of the combined SiN layer and first oxide layer in the cell area.
2. The CMOS sensor as claimed in claim 1 , further comprising color filters on the SiN layer in the cell area.
3. The CMOS sensor as claimed in claim 1 , further comprising a metal interconnection at a lower portion of the first oxide layer in the cell area.
4. The CMOS sensor as claimed in claim 1 , further comprising a contact in the first oxide layer and the SiN layer, in contact with the metal interconnection.
5. The CMOS sensor as claimed in claim 1 , wherein the first oxide layer has a smaller thickness that the second oxide layer.
6. The CMOS sensor as claimed in claim 1 , wherein the first oxide layer comprises a first USG layer.
7. The CMOS sensor as claimed in claim 6 , wherein the second oxide layer comprises a second USG layer.
8. The CMOS sensor as claimed in claim 1 , wherein the second oxide layer comprises USG.
9. A CMOS sensor comprising:
a semiconductor substrate including a cell area and a scribe area;
a first oxide layer and a SiN layer in the cell area of the semiconductor substrate;
color filters on the SiN layer; and
a second oxide layer in the scribe area of the semiconductor substrate.
Priority Applications (1)
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US12/553,408 US20090321798A1 (en) | 2005-12-29 | 2009-09-03 | CMOS Image Sensor and Method of Manufacturing the Same |
Applications Claiming Priority (4)
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KR10-2005-0133786 | 2005-12-29 | ||
KR1020050133786A KR100720472B1 (en) | 2005-12-29 | 2005-12-29 | Cmos image sensor and method of manufacturing the same |
US11/646,797 US7605016B2 (en) | 2005-12-29 | 2006-12-27 | CMOS image sensor and method of manufacturing the same |
US12/553,408 US20090321798A1 (en) | 2005-12-29 | 2009-09-03 | CMOS Image Sensor and Method of Manufacturing the Same |
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US11/646,797 Division US7605016B2 (en) | 2005-12-29 | 2006-12-27 | CMOS image sensor and method of manufacturing the same |
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US12/553,408 Abandoned US20090321798A1 (en) | 2005-12-29 | 2009-09-03 | CMOS Image Sensor and Method of Manufacturing the Same |
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KR102012810B1 (en) | 2011-05-12 | 2019-08-21 | 디퍼이 신테스 프로덕츠, 인코포레이티드 | Imaging sensor and method of accessing data on imaging sensor |
KR102143807B1 (en) | 2012-07-26 | 2020-08-31 | 디퍼이 신테스 프로덕츠, 인코포레이티드 | Camera system with minimal area monolithic cmos image sensor |
AU2014223163A1 (en) | 2013-02-28 | 2015-08-20 | Olive Medical Corporation | Videostroboscopy of vocal chords with CMOS sensors |
CN105228503B (en) | 2013-03-15 | 2017-11-07 | 德普伊新特斯产品公司 | Minimize the quantity of imaging sensor input/output and conductor in endoscopic applications |
BR112015023206A2 (en) | 2013-03-15 | 2017-08-22 | Olive Medical Corp | IMAGE SENSOR SYNCHRONIZATION WITHOUT INPUT TIMER AND DATA TRANSMISSION TIMER |
CN107924810B (en) * | 2015-09-04 | 2022-09-30 | 南洋理工大学 | Method for encapsulating substrate |
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KR20040058738A (en) * | 2002-12-27 | 2004-07-05 | 주식회사 하이닉스반도체 | CMOS image sensor with microlense having reduced radius of curvature comparing to long wavelength of incident light and the method of fabricating the same |
-
2005
- 2005-12-29 KR KR1020050133786A patent/KR100720472B1/en not_active IP Right Cessation
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2006
- 2006-12-27 US US11/646,797 patent/US7605016B2/en not_active Expired - Fee Related
-
2009
- 2009-09-03 US US12/553,408 patent/US20090321798A1/en not_active Abandoned
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US6617189B1 (en) * | 2002-02-07 | 2003-09-09 | United Microelectronics Corp. | Method of fabricating an image sensor |
US20060163700A1 (en) * | 2004-12-30 | 2006-07-27 | Se-Yeul Bae | Semiconductor device and method of manufacturing the same |
US20070032015A1 (en) * | 2005-07-29 | 2007-02-08 | Fujitsu Limited | Semiconductor device and manufacturing method of the same |
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US20080036485A1 (en) * | 2006-08-09 | 2008-02-14 | Fujitsu Limited | Semiconductor wafer and method of testing the same |
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Also Published As
Publication number | Publication date |
---|---|
US20070155084A1 (en) | 2007-07-05 |
US7605016B2 (en) | 2009-10-20 |
KR100720472B1 (en) | 2007-05-22 |
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