JP2006253680A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006253680A5 JP2006253680A5 JP2006060320A JP2006060320A JP2006253680A5 JP 2006253680 A5 JP2006253680 A5 JP 2006253680A5 JP 2006060320 A JP2006060320 A JP 2006060320A JP 2006060320 A JP2006060320 A JP 2006060320A JP 2006253680 A5 JP2006253680 A5 JP 2006253680A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- insulating layer
- mold insulating
- layer
- upper mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010410 layer Substances 0.000 claims 36
- 238000000034 method Methods 0.000 claims 13
- 229910052751 metal Inorganic materials 0.000 claims 8
- 230000004888 barrier function Effects 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 7
- 230000002093 peripheral effect Effects 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 239000011229 interlayer Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 230000002265 prevention Effects 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050018763A KR100717277B1 (ko) | 2005-03-07 | 2005-03-07 | 이미지 센서 및 그 형성 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006253680A JP2006253680A (ja) | 2006-09-21 |
| JP2006253680A5 true JP2006253680A5 (enExample) | 2009-04-23 |
Family
ID=36944585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006060320A Withdrawn JP2006253680A (ja) | 2005-03-07 | 2006-03-06 | イメージセンサー及びその形成方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20060199295A1 (enExample) |
| JP (1) | JP2006253680A (enExample) |
| KR (1) | KR100717277B1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5092379B2 (ja) * | 2006-12-07 | 2012-12-05 | ソニー株式会社 | 固体撮像装置及びその製造方法並びに撮像装置 |
| KR100913326B1 (ko) * | 2007-11-19 | 2009-08-20 | 주식회사 동부하이텍 | 이미지 센서 및 그의 제조 방법 |
| KR100935757B1 (ko) * | 2007-12-24 | 2010-01-06 | 주식회사 동부하이텍 | 씨모스 이미지 센서 소자의 제조 방법 |
| KR101463609B1 (ko) | 2008-02-15 | 2014-11-21 | 삼성전자 주식회사 | 이미지 센서 및 그 제조 방법 |
| US8018014B2 (en) * | 2008-05-29 | 2011-09-13 | Oki Semiconductor Co., Ltd. | Semiconductor device |
| IT1392502B1 (it) * | 2008-12-31 | 2012-03-09 | St Microelectronics Srl | Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione |
| US20100163759A1 (en) * | 2008-12-31 | 2010-07-01 | Stmicroelectronics S.R.L. | Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process |
| US9287308B2 (en) | 2013-04-08 | 2016-03-15 | Omnivision Technologies, Inc. | Image sensor having metal contact coupled through a contact etch stop layer with an isolation region |
| EP3506356B1 (en) * | 2017-12-28 | 2023-07-12 | IMEC vzw | Method for producing an image sensor, and image sensor |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08306897A (ja) * | 1995-05-09 | 1996-11-22 | Matsushita Electron Corp | 固体撮像装置 |
| US6103616A (en) * | 1998-08-19 | 2000-08-15 | Advanced Micro Devices, Inc. | Method to manufacture dual damascene structures by utilizing short resist spacers |
| KR20040058687A (ko) * | 2002-12-27 | 2004-07-05 | 주식회사 하이닉스반도체 | 포토다이오드 주위에 광 집속층을 구비한 시모스 이미지센서 |
| KR100524200B1 (ko) * | 2003-01-16 | 2005-10-26 | 삼성전자주식회사 | 이미지 소자 및 그 제조 방법 |
| JP4050631B2 (ja) * | 2003-02-21 | 2008-02-20 | 株式会社ルネサステクノロジ | 電子デバイスの製造方法 |
| JP4123060B2 (ja) * | 2003-06-11 | 2008-07-23 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
-
2005
- 2005-03-07 KR KR1020050018763A patent/KR100717277B1/ko not_active Expired - Fee Related
-
2006
- 2006-03-06 JP JP2006060320A patent/JP2006253680A/ja not_active Withdrawn
- 2006-03-07 US US11/369,474 patent/US20060199295A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009252949A5 (enExample) | ||
| JP2008118142A5 (enExample) | ||
| TWI520317B (zh) | 半導體裝置及其製造方法 | |
| JP2013251539A5 (enExample) | ||
| JP2012182429A5 (ja) | 固体撮像装置、及び固体撮像装置の製造方法 | |
| JP2006179903A5 (enExample) | ||
| JP2008522408A5 (enExample) | ||
| JP2008526022A5 (enExample) | ||
| JP4423255B2 (ja) | Ｃｍｏｓイメージセンサの製造方法 | |
| JP2011527828A5 (enExample) | ||
| JP2006253680A5 (enExample) | ||
| WO2010015301A8 (en) | Passivation of etched semiconductor structures | |
| JP2016219468A5 (enExample) | ||
| JP2012164942A5 (enExample) | ||
| JP2006196899A5 (enExample) | ||
| JP2011124454A5 (enExample) | ||
| JP2015041711A5 (enExample) | ||
| WO2009054413A1 (ja) | 半導体装置の作製方法 | |
| JP2006210595A5 (enExample) | ||
| JP2009111059A5 (enExample) | ||
| JP2015115402A5 (enExample) | ||
| JP2007095791A5 (enExample) | ||
| JP2014086514A5 (enExample) | ||
| TW201304127A (zh) | 一種影像感測器及其製造方法 | |
| KR100889558B1 (ko) | 반도체소자의 층간절연막 형성방법 |