JP2006253680A - イメージセンサー及びその形成方法 - Google Patents

イメージセンサー及びその形成方法 Download PDF

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Publication number
JP2006253680A
JP2006253680A JP2006060320A JP2006060320A JP2006253680A JP 2006253680 A JP2006253680 A JP 2006253680A JP 2006060320 A JP2006060320 A JP 2006060320A JP 2006060320 A JP2006060320 A JP 2006060320A JP 2006253680 A JP2006253680 A JP 2006253680A
Authority
JP
Japan
Prior art keywords
insulating layer
forming
mold insulating
image sensor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006060320A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006253680A5 (enExample
Inventor
Jong-Wook Hong
鍾郁 洪
June-Taeg Lee
準澤 李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2006253680A publication Critical patent/JP2006253680A/ja
Publication of JP2006253680A5 publication Critical patent/JP2006253680A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J27/00—Cooking-vessels
    • A47J27/002—Construction of cooking-vessels; Methods or processes of manufacturing specially adapted for cooking-vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J36/00—Parts, details or accessories of cooking-vessels
    • A47J36/02—Selection of specific materials, e.g. heavy bottoms with copper inlay or with insulating inlay
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
    • H05B6/12—Cooking devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S220/00—Receptacles
    • Y10S220/912—Cookware, i.e. pots and pans

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Food Science & Technology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2006060320A 2005-03-07 2006-03-06 イメージセンサー及びその形成方法 Withdrawn JP2006253680A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050018763A KR100717277B1 (ko) 2005-03-07 2005-03-07 이미지 센서 및 그 형성 방법

Publications (2)

Publication Number Publication Date
JP2006253680A true JP2006253680A (ja) 2006-09-21
JP2006253680A5 JP2006253680A5 (enExample) 2009-04-23

Family

ID=36944585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006060320A Withdrawn JP2006253680A (ja) 2005-03-07 2006-03-06 イメージセンサー及びその形成方法

Country Status (3)

Country Link
US (1) US20060199295A1 (enExample)
JP (1) JP2006253680A (enExample)
KR (1) KR100717277B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008147288A (ja) * 2006-12-07 2008-06-26 Sony Corp 固体撮像装置及びその製造方法並びに撮像装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100913326B1 (ko) * 2007-11-19 2009-08-20 주식회사 동부하이텍 이미지 센서 및 그의 제조 방법
KR100935757B1 (ko) * 2007-12-24 2010-01-06 주식회사 동부하이텍 씨모스 이미지 센서 소자의 제조 방법
KR101463609B1 (ko) 2008-02-15 2014-11-21 삼성전자 주식회사 이미지 센서 및 그 제조 방법
US8018014B2 (en) * 2008-05-29 2011-09-13 Oki Semiconductor Co., Ltd. Semiconductor device
IT1392502B1 (it) * 2008-12-31 2012-03-09 St Microelectronics Srl Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione
US20100163759A1 (en) * 2008-12-31 2010-07-01 Stmicroelectronics S.R.L. Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process
US9287308B2 (en) 2013-04-08 2016-03-15 Omnivision Technologies, Inc. Image sensor having metal contact coupled through a contact etch stop layer with an isolation region
EP3506356B1 (en) * 2017-12-28 2023-07-12 IMEC vzw Method for producing an image sensor, and image sensor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306897A (ja) * 1995-05-09 1996-11-22 Matsushita Electron Corp 固体撮像装置
US6103616A (en) * 1998-08-19 2000-08-15 Advanced Micro Devices, Inc. Method to manufacture dual damascene structures by utilizing short resist spacers
KR20040058687A (ko) * 2002-12-27 2004-07-05 주식회사 하이닉스반도체 포토다이오드 주위에 광 집속층을 구비한 시모스 이미지센서
KR100524200B1 (ko) * 2003-01-16 2005-10-26 삼성전자주식회사 이미지 소자 및 그 제조 방법
JP4050631B2 (ja) * 2003-02-21 2008-02-20 株式会社ルネサステクノロジ 電子デバイスの製造方法
JP4123060B2 (ja) * 2003-06-11 2008-07-23 ソニー株式会社 固体撮像素子及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008147288A (ja) * 2006-12-07 2008-06-26 Sony Corp 固体撮像装置及びその製造方法並びに撮像装置

Also Published As

Publication number Publication date
KR20060097878A (ko) 2006-09-18
KR100717277B1 (ko) 2007-05-15
US20060199295A1 (en) 2006-09-07

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