JP2006190891A - 固体撮像素子及び固体撮像素子の製造方法 - Google Patents
固体撮像素子及び固体撮像素子の製造方法 Download PDFInfo
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- JP2006190891A JP2006190891A JP2005002772A JP2005002772A JP2006190891A JP 2006190891 A JP2006190891 A JP 2006190891A JP 2005002772 A JP2005002772 A JP 2005002772A JP 2005002772 A JP2005002772 A JP 2005002772A JP 2006190891 A JP2006190891 A JP 2006190891A
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
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- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
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- 238000006243 chemical reaction Methods 0.000 description 20
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- 238000009413 insulation Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
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- 229910052698 phosphorus Inorganic materials 0.000 description 2
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000003109 potassium Chemical class 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Physics & Mathematics (AREA)
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- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】 マトリクス状に配列された受光部7と、受光部の垂直列毎に設けられた各受光部から電荷を転送する転送部とを有する撮像部が形成されたN型シリコン基板1と、N型シリコン基板上に形成されたCMP処理が施され、その表面にカリウム元素が残留する第1の配線間絶縁膜11を備えるCMOS型固体撮像素子100において、N型シリコン基板1と第1の配線間絶縁膜11の間に第1の拡散防止膜30を形成する。
【選択図】 図1
Description
即ち、第1の配線間絶縁膜111と第1の拡散防止膜113との間及び第2の配線間絶縁膜114と第2の拡散防止膜117との間で、配線材料である銅やバリアメタルをCMP研磨する際に研磨剤として使用されるスラリーに多く含有するカリウムが残留し、このカリウムが酸化膜やシリコン基板の中を拡散することとなる。
そして、拡散したカリウムが光電変換素子の受光部に達すると不純物汚染として白点欠陥等の画質劣化に繋がる。
図1は本発明を適用した固体撮像素子の一例であるCMOS型固体撮像素子を説明するための模式的な断面図である。
2 素子分離膜
3 トランジスタのゲート酸化膜
4 トランジスタのゲート電極
5 サイドウォール
6 高濃度拡散層領域
7 受光部
8 シリコン窒化膜
9 層間絶縁膜
10 第1の接続部
10A バリアメタル層
10B タングステン電極層
11 第1の配線間絶縁膜
12 第1の配線層
12A バリアメタル
12B 銅
13 第2の拡散防止膜
14 第2の配線間絶縁膜
15 第2の接続部
15A バリアメタル
15B 銅
16 第2の配線層
17 第3の拡散防止膜
18 カラーレジスト
19 オンチップレンズ
20 開口部
20A 開口領域
21 CVD酸化膜
30 第1の拡散防止膜
50 開口部
100 CMOS型固体撮像素子
Claims (6)
- 受光部を有する撮像領域が形成された半導体基板と、
該半導体基板上に金属元素を含む液体を用いた平坦化処理にて形成された所定の層とを備える固体撮像素子において、
少なくとも前記受光部と前記所定の層の間に第1の拡散防止膜が形成された
ことを特徴とする固体撮像素子。 - 前記半導体基板と前記第1の拡散防止膜の間に、所定の開口部を有する第2の拡散防止膜が形成された
ことを特徴とする請求項1に記載の固体撮像素子。 - 前記所定の層の上層に、受光部領域が開口した第3の拡散防止膜が形成された
ことを特徴とする請求項1に記載の固体撮像素子。 - 前記第1の拡散防止膜は、炭化シリコン若しくは窒化シリコンから成る
ことを特徴とする請求項1に記載の固体撮像素子。 - 半導体基板に受光部を有する撮像領域を形成する工程と、
前記半導体基板上に第1の拡散防止膜を形成する工程と、
該第1の拡散防止膜の上層に所定の層を形成し、該所定の層に金属元素を含む液体を用いた平坦化処理を施す工程とを備える
ことを特徴とする固体撮像素子の製造方法。 - 前記平坦化処理はCMP工程である
ことを特徴とする請求項5に記載の固体撮像素子の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005002772A JP4938238B2 (ja) | 2005-01-07 | 2005-01-07 | 固体撮像素子及び固体撮像素子の製造方法 |
US11/324,862 US7786515B2 (en) | 2005-01-07 | 2006-01-04 | Solid-state imaging device and method of manufacturing the same |
KR1020060001606A KR101217364B1 (ko) | 2005-01-07 | 2006-01-06 | 고체 촬상 소자 및 고체 촬상 소자의 제조 방법 |
CNB200610005733XA CN100463202C (zh) | 2005-01-07 | 2006-01-06 | 固态成像装置及其制造方法 |
US11/830,295 US20070281382A1 (en) | 2005-01-07 | 2007-07-30 | Solid-state imaging device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005002772A JP4938238B2 (ja) | 2005-01-07 | 2005-01-07 | 固体撮像素子及び固体撮像素子の製造方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009105910A Division JP5212246B2 (ja) | 2009-04-24 | 2009-04-24 | 固体撮像素子及び固体撮像素子の製造方法 |
JP2009214018A Division JP5110060B2 (ja) | 2009-09-16 | 2009-09-16 | 固体撮像素子及び固体撮像素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2006190891A true JP2006190891A (ja) | 2006-07-20 |
JP4938238B2 JP4938238B2 (ja) | 2012-05-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005002772A Expired - Fee Related JP4938238B2 (ja) | 2005-01-07 | 2005-01-07 | 固体撮像素子及び固体撮像素子の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7786515B2 (ja) |
JP (1) | JP4938238B2 (ja) |
KR (1) | KR101217364B1 (ja) |
CN (1) | CN100463202C (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1930950A2 (en) | 2006-12-08 | 2008-06-11 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
KR20090117637A (ko) * | 2008-05-09 | 2009-11-12 | 소니 가부시끼 가이샤 | 고체 촬상 장치 및 전자 기기 |
KR100953153B1 (ko) | 2007-02-23 | 2010-04-19 | 캐논 가부시끼가이샤 | 광전변환장치 및 광전변환장치를 사용한 촬상시스템 |
WO2021199681A1 (ja) * | 2020-03-31 | 2021-10-07 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および電子機器 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5159120B2 (ja) * | 2007-02-23 | 2013-03-06 | キヤノン株式会社 | 光電変換装置およびその製造方法 |
JP4725614B2 (ja) * | 2008-01-24 | 2011-07-13 | ソニー株式会社 | 固体撮像装置 |
JP5627202B2 (ja) * | 2009-06-18 | 2014-11-19 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
JP5304536B2 (ja) * | 2009-08-24 | 2013-10-02 | ソニー株式会社 | 半導体装置 |
EP3514831B1 (en) | 2009-12-26 | 2021-10-13 | Canon Kabushiki Kaisha | Solid-state image pickup apparatus and image pickup system |
KR101801259B1 (ko) * | 2010-07-21 | 2017-11-27 | 삼성전자주식회사 | 광 유도 구조물, 상기 광 유도 구조물을 포함하는 이미지 센서, 및 상기 이미지 센서를 포함하는 프로세서 베이스드 시스템 |
CN103022062B (zh) * | 2011-07-19 | 2016-12-21 | 索尼公司 | 固体摄像器件及其制造方法和电子设备 |
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2005
- 2005-01-07 JP JP2005002772A patent/JP4938238B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-04 US US11/324,862 patent/US7786515B2/en not_active Expired - Fee Related
- 2006-01-06 CN CNB200610005733XA patent/CN100463202C/zh not_active Expired - Fee Related
- 2006-01-06 KR KR1020060001606A patent/KR101217364B1/ko not_active IP Right Cessation
-
2007
- 2007-07-30 US US11/830,295 patent/US20070281382A1/en not_active Abandoned
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JP2002270691A (ja) * | 2002-02-07 | 2002-09-20 | Nec Corp | 配線構造 |
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1930950A2 (en) | 2006-12-08 | 2008-06-11 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
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KR101217364B1 (ko) | 2012-12-31 |
US20070281382A1 (en) | 2007-12-06 |
CN1819251A (zh) | 2006-08-16 |
US20060151812A1 (en) | 2006-07-13 |
JP4938238B2 (ja) | 2012-05-23 |
KR20060081357A (ko) | 2006-07-12 |
CN100463202C (zh) | 2009-02-18 |
US7786515B2 (en) | 2010-08-31 |
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